JP6419069B2 - 温度制御統合圧電性共振器 - Google Patents
温度制御統合圧電性共振器 Download PDFInfo
- Publication number
- JP6419069B2 JP6419069B2 JP2015515251A JP2015515251A JP6419069B2 JP 6419069 B2 JP6419069 B2 JP 6419069B2 JP 2015515251 A JP2015515251 A JP 2015515251A JP 2015515251 A JP2015515251 A JP 2015515251A JP 6419069 B2 JP6419069 B2 JP 6419069B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resonator
- piezoelectric
- integrated
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
Claims (18)
- 統合共振器装置であって、
圧電性共振器と、
前記圧電性共振器に結合される第1の音響ブラッグリフレクタと、
その上に前記第1の音響ブラッグリフレクタが配置される基板と、
前記圧電性共振器を覆うアクティブヒータ層であって、前記アクティブヒータ層により生成された熱が前記アクティブヒータ層を介して提供される電流の量によって制御可能である、前記アクティブヒータ層と、
前記アクティブヒータ層と前記圧電性共振器との間に位置する第2の音響ブラッグリフレクタと、
を含む、統合共振器装置。 - 請求項1に記載の統合共振器装置であって、
前記アクティブヒータ層がタンタルアルミニウム合金薄膜を含む、統合共振器装置。 - 請求項1に記載の統合共振器装置であって、
前記第1の音響ブラッグリフレクタが、高音響インピーダンスと低音響インピーダンスとの交互の層を含む、統合共振器装置。 - 請求項3に記載の統合共振器装置であって、
高音響インピーダンスと低音響インピーダンスとの各層の厚さが、前記圧電性共振器の共振周波数の4分の1波長である、統合共振器装置。 - 請求項1に記載の統合共振器装置であって、
前記第1の音響ブラッグリフレクタと前記基板との間に温度センサ層を更に含む、統合共振器装置。 - 請求項5に記載の統合共振器装置であって、
前記温度センサ層がドープされたポリシリコンを含む、統合共振器装置。 - 請求項5に記載の統合共振器装置であって、
前記圧電性共振器の圧電性層の周波数温度係数と、ほぼ同じであるが、逆の符号の、周波数温度係数を有する温度補償層を更に含む、統合共振器装置。 - 請求項1に記載の統合共振器装置であって、
前記圧電性共振器の圧電性層の周波数温度係数と、ほぼ同じであるが、逆の符号の、周波数温度係数を有する温度補償層を更に含む、統合共振器装置。 - 請求項8に記載の統合共振器装置であって、
前記温度補償層が二酸化ケイ素を含む、統合共振器装置。 - 圧電性共振器と、前記圧電性共振器に結合される音響ブラッグリフレクタと、前記圧電性共振器を覆うアクティブヒータ層と、温度センサ層とを含む、統合共振器装置と、
前記温度センサ層から温度を示す温度信号を受け取り、前記温度信号に基づいて前記アクティブヒータ層の電流の量を制御する回路と、
を含む、システム。 - 請求項10に記載のシステムであって、
前記圧電性共振器が2つの電極の間に配置される圧電性層を含み、
前記統合共振器装置が、前記圧電性共振器における前記圧電性層の周波数温度係数と、ほぼ同じであるが、逆の符号の、周波数温度係数を有する温度補償層を更に含み、
前記温度補償層が、前記2つの電極のうちの1つと前記圧電性層との間に提供される、システム。 - 請求項11に記載のシステムであって、
前記温度補償層が二酸化ケイ素を含む、システム。 - 請求項10に記載のシステムであって、
前記アクティブヒータ層がタンタルアルミニウム合金薄膜を含む、システム。 - 請求項10に記載のシステムであって、
前記温度センサ層がドープされたポリシリコンを含む、システム。 - 請求項10に記載のシステムであって、
前記圧電性共振器内に配置される温度補償層を更に含む、システム。 - 第1及び第2の音響ブラッグリフレクタの間に位置する圧電性共振器を覆うアクティブヒータ層を有する統合圧電性共振器を用いる方法であって、
前記統合圧電性共振器内の温度センサ層から温度信号を受信することと、
前記温度信号に基づいて、前記アクティブヒータ層を介する電流を調整することにより前記統合圧電性共振器内の前記アクティブヒータ層により発生される熱の量を制御することと、
を含む、方法。 - ブラッグリフレクタを備える圧電性共振器を形成する方法であって、
ブラッグリフレクタを定義する基板の上に低音響インピーダンス材料と高音響インピーダンス材料との交互の誘電体層を堆積することと、
前記交互の誘電体層の上に第1の共振器電極を堆積することと、
前記第1の共振器電極の上に圧電性層を堆積することと、
前記圧電性層の上に第2の共振器電極を堆積することと、
前記第2の共振器電極の上にアクティブヒータ層を堆積することと、
前記基板と前記交互の誘電体層との間に温度センサ層を堆積することと、
を含む、方法。 - 請求項17に記載の方法であって、
前記2つの電極の1つと前記圧電性層との間に温度補償層を堆積することを更に含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/484,961 | 2012-05-31 | ||
US13/484,961 US9240767B2 (en) | 2012-05-31 | 2012-05-31 | Temperature-controlled integrated piezoelectric resonator apparatus |
PCT/US2013/043657 WO2013181562A1 (en) | 2012-05-31 | 2013-05-31 | Temperature-controlled integrated piezoelectric resonator |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015519848A JP2015519848A (ja) | 2015-07-09 |
JP2015519848A5 JP2015519848A5 (ja) | 2016-06-16 |
JP6419069B2 true JP6419069B2 (ja) | 2018-11-07 |
Family
ID=49669498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015515251A Active JP6419069B2 (ja) | 2012-05-31 | 2013-05-31 | 温度制御統合圧電性共振器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9240767B2 (ja) |
JP (1) | JP6419069B2 (ja) |
CN (1) | CN104321893B (ja) |
WO (1) | WO2013181562A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11289246B2 (en) | 2019-05-23 | 2022-03-29 | Seiko Epson Corporation | Vibrator device, electronic apparatus, and vehicle |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI538395B (zh) * | 2014-05-07 | 2016-06-11 | 國立清華大學 | 主動式溫度補償共振器結構 |
JP6256605B2 (ja) * | 2014-06-12 | 2018-01-10 | 株式会社村田製作所 | 圧電デバイス |
US10778180B2 (en) * | 2015-12-10 | 2020-09-15 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a modified outside stack portion |
US9965930B1 (en) * | 2017-03-16 | 2018-05-08 | Apple Inc. | Electronic device including piezoelectric material layer and temperature compensation circuitry and related methods |
JP6781271B2 (ja) * | 2017-09-22 | 2020-11-04 | 安徽安努奇科技有限公司Anhui Anuki Technologies Co., Ltd. | 圧電共振器の製造方法と圧電共振器 |
DE102017129160B3 (de) * | 2017-12-07 | 2019-01-31 | RF360 Europe GmbH | Elektroakustisches Resonatorbauelement und Verfahren zu dessen Herstellung |
US11563419B1 (en) * | 2018-10-18 | 2023-01-24 | Hrl Laboratories, Llc | Piezoelectric resonator with multiple electrode sections |
TWI810698B (zh) * | 2019-06-12 | 2023-08-01 | 美商特拉華公司 | 電極界定未懸掛之聲波共振器 |
CN111010115A (zh) * | 2019-08-09 | 2020-04-14 | 天津大学 | 体声波谐振器、滤波器和电子设备及控制谐振器温度的方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62245811A (ja) * | 1986-04-18 | 1987-10-27 | Nippon Dempa Kogyo Co Ltd | 恒温型圧電振動子 |
US5283458A (en) * | 1992-03-30 | 1994-02-01 | Trw Inc. | Temperature stable semiconductor bulk acoustic resonator |
US5696423A (en) * | 1995-06-29 | 1997-12-09 | Motorola, Inc. | Temperature compenated resonator and method |
US6060692A (en) * | 1998-09-02 | 2000-05-09 | Cts Corporation | Low power compact heater for piezoelectric device |
JP3801083B2 (ja) * | 2001-06-06 | 2006-07-26 | 株式会社村田製作所 | 弾性表面波装置 |
DE10262056B4 (de) * | 2002-11-07 | 2008-08-28 | Infineon Technologies Ag | BAW-Resonator mit akustischem Reflektor und Filterschaltung |
KR100502569B1 (ko) | 2003-04-15 | 2005-07-20 | 박희대 | 선택형 블라그 반사층을 이용한 fbar 필터 |
FR2857785B1 (fr) * | 2003-07-17 | 2005-10-21 | Commissariat Energie Atomique | Resonateur acoustique de volume a frequence de resonance ajustee et procede de realisation |
US7358831B2 (en) * | 2003-10-30 | 2008-04-15 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with simplified packaging |
US7391285B2 (en) | 2003-10-30 | 2008-06-24 | Avago Technologies Wireless Ip Pte Ltd | Film acoustically-coupled transformer |
DE102005043037B4 (de) | 2005-09-09 | 2009-04-09 | Siemens Ag | Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz |
DE102005043039B4 (de) * | 2005-09-09 | 2008-10-30 | Siemens Ag | Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz |
US7463118B2 (en) * | 2006-06-09 | 2008-12-09 | Texas Instruments Incorporated | Piezoelectric resonator with an efficient all-dielectric Bragg reflector |
US7898365B2 (en) * | 2006-09-06 | 2011-03-01 | Raytheon Company | Integrated saw device heater |
US7385334B1 (en) * | 2006-11-20 | 2008-06-10 | Sandia Corporation | Contour mode resonators with acoustic reflectors |
JP4978210B2 (ja) * | 2007-01-25 | 2012-07-18 | セイコーエプソン株式会社 | バルク音響振動子の製造方法 |
KR101155989B1 (ko) * | 2007-06-21 | 2012-06-18 | 삼성전자주식회사 | 잉크젯 프린트헤드의 제조방법 |
ATE534191T1 (de) * | 2009-03-09 | 2011-12-15 | Micro Crystal Ag | Oszillatorvorrichtung, die einen wärmegesteuerten piezoeletrischen quarz umfasst |
US9608589B2 (en) | 2010-10-26 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of forming acoustic resonator using intervening seed layer |
-
2012
- 2012-05-31 US US13/484,961 patent/US9240767B2/en active Active
-
2013
- 2013-05-31 WO PCT/US2013/043657 patent/WO2013181562A1/en active Application Filing
- 2013-05-31 CN CN201380025923.6A patent/CN104321893B/zh active Active
- 2013-05-31 JP JP2015515251A patent/JP6419069B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11289246B2 (en) | 2019-05-23 | 2022-03-29 | Seiko Epson Corporation | Vibrator device, electronic apparatus, and vehicle |
Also Published As
Publication number | Publication date |
---|---|
WO2013181562A1 (en) | 2013-12-05 |
JP2015519848A (ja) | 2015-07-09 |
CN104321893A (zh) | 2015-01-28 |
CN104321893B (zh) | 2017-09-22 |
US20130321101A1 (en) | 2013-12-05 |
US9240767B2 (en) | 2016-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6419069B2 (ja) | 温度制御統合圧電性共振器 | |
US7463118B2 (en) | Piezoelectric resonator with an efficient all-dielectric Bragg reflector | |
US9305971B2 (en) | Integrated piezoelectric resonator and additional active circuit | |
US6507983B1 (en) | Method of making tunable thin film acoustic resonators | |
JP4624005B2 (ja) | 薄膜バルク音響共鳴器における圧電結合係数を制御して製造される装置 | |
JP4345049B2 (ja) | 薄膜音響共振器及びその製造方法 | |
US9647625B2 (en) | Method for manufacturing BAW resonators on a semiconductor wafer | |
US11799436B2 (en) | Method of forming an integrated resonator with a mass bias | |
US9929714B2 (en) | Temperature compensated bulk acoustic wave resonator with a high coupling coefficient | |
JP2017112585A (ja) | 音響共振器及びその製造方法 | |
JP4730383B2 (ja) | 薄膜音響共振器及びその製造方法 | |
KR102632355B1 (ko) | 음향 공진기 | |
DeMiguel-Ramos et al. | The influence of acoustic reflectors on the temperature coefficient of frequency of solidly mounted resonators | |
Fatemi et al. | Very low-loss high frequency lateral-mode resonators on polished ultrananocrystalline diamond | |
JP2004119938A (ja) | 酸化シリコン膜製造方法及び装置 | |
Mirea et al. | AlN-based solidly mounted resonators on glass substrates for high temperature applications | |
JP7217876B2 (ja) | 電子素子、温度センサー、磁気センサー、振動センサーおよび加速度センサー | |
JP2003060478A (ja) | 圧電薄膜共振子、その製造方法、および、その圧電薄膜共振子を用いたフィルタならびに電子機器 | |
JP2020153887A (ja) | 膜厚センサ素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160419 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160419 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170214 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170512 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170714 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170728 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180131 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180427 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180524 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180926 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181009 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6419069 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |