JP2015202997A - Substrate, substrate production system, peeling device, substrate production method and peeling method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate that can, while maintaining the vacuum suction force toward the substrate on a stage, easily be peeled off from the stage and that is less likely to generate peeling static build-up when peeling off from the stage.SOLUTION: Provided is a substrate 500 of a rectangular shape having a first surface 510, and a second surface 520 opposite to the first surface 510, and in which the arithmetic mean surface roughness of the central portion of first surface 510 is at least smaller than the arithmetic mean surface roughness of the one edge portion along one side E1 of the first surface 510.

Description

  The present invention relates to a substrate, a substrate manufacturing system, a peeling apparatus, a substrate manufacturing method, and a peeling method.

  A manufacturing process of a flat panel display or the like includes a chamfering process for grinding sharp corners to prevent cracking or chipping of the substrate, and a process for forming an electronic member such as a thin film transistor or a transparent electrode on the substrate. These steps are performed in a state where one surface of the substrate (hereinafter referred to as “first surface”) is fixed to the stage by vacuum suction (see, for example, Patent Document 1).

  A surface on the stage on which the substrate is placed (hereinafter referred to as “mounting surface”) is formed of metal or ceramic. If the first surface is smooth, the substrate tends to stick to the stage. Therefore, when the substrate is peeled from the stage, the substrate is likely to be damaged or the substrate is likely to be peeled off. In order to prevent breakage of the substrate or generation of peeling electrification of the substrate, etching is performed by spraying a reactive gas on the first surface to roughen the first surface. As a result, the contact area between the substrate and the stage is reduced, and the substrate can be easily peeled off without being damaged (see, for example, Patent Document 2).

JP 2011-207739 A International Publication No. 2010/128673

  However, if the entire surface of the first surface is uniformly roughened, the contact area between the first surface and the mounting surface is reduced, so that the vacuum suction force of the stage is weakened. For this reason, when performing said process, the problem that a board | substrate will shift | deviate from a desired fixed position arises.

  The present invention has been made in view of the above circumstances, and can be easily peeled off from the stage while maintaining the vacuum suction force to the substrate of the stage. It is an object of the present invention to provide a substrate, a substrate manufacturing system, a peeling apparatus, a substrate manufacturing method, and a peeling method that are difficult to generate.

  The substrate according to the first aspect of the present invention is a substrate having a first surface and a second surface opposite to the first surface, the arithmetic average of the central portion of the first surface The surface roughness is less than at least the arithmetic average surface roughness of one edge along one side of the first surface.

  In the substrate according to the first aspect of the present invention, the arithmetic average surface roughness of four edges along the four sides of the first surface is the arithmetic average surface roughness of the central portion of the first surface. It may be smaller than any of the above.

  In the substrate according to the first aspect of the present invention, the first surface may be a surface that comes into contact with the suction stage, and the second surface may be a surface on which an electronic member is formed. .

  A substrate manufacturing system according to a first aspect of the present invention includes a transport device that transports a substrate, and a reactive gas is sprayed onto a first surface of the substrate transported by the transport device to roughen the first surface. And an airflow control means for causing an airflow whose direction changes depending on the relative position between the substrate and the nozzle to flow into a gap between the nozzle and the substrate.

  In the substrate manufacturing system according to the first aspect of the present invention, the airflow control means includes a first airflow generation device, and the first airflow generation device is provided downstream of the nozzle in the substrate transport direction. The first airflow may act on the first surface of the substrate on which the reactive gas is blown by the nozzle.

  In the substrate manufacturing system according to the first aspect of the present invention, the airflow control means includes a second airflow generation device and a third airflow generation device, and the second airflow generation device is A second airflow is applied to a second surface opposite to the first surface of the substrate, which is provided on the upstream side of the nozzle in the substrate transport direction and is sprayed with the reactive gas by the nozzle; The airflow generation device is provided downstream of the nozzle in the substrate transport direction and upstream of the first airflow generation device in the substrate transport direction, and generates a third airflow in the same direction as the second airflow. It may be.

  The substrate manufacturing system according to the first aspect of the present invention includes a second airflow generation device and a third airflow generation device, and the second airflow generation device is upstream of the nozzle in the substrate transport direction. A second airflow is applied to a second surface opposite to the first surface of the substrate, which is provided on a side and the reactive gas is blown by the nozzle, It may be provided downstream of the nozzle in the substrate transport direction, and may generate a third airflow from one side of the transport path to the other side across the transport path of the substrate.

  The substrate manufacturing system according to the first aspect of the present invention is connected to the etching tank in which the nozzle is provided and the upstream side of the etching tank in the substrate transport direction, and is internally provided by the second airflow generation device. A first buffer tank in which a second air stream is generated, and a second buffer tank connected to the downstream side of the etching tank in the substrate transport direction, and the third air stream generating device generates the third air stream therein. A buffer tank, and each of the etching tank, the first buffer tank, and the second buffer tank includes a substrate carry-in port into which the substrate is loaded by the transfer device, and the substrate by the transfer device. A length of the first buffer tank from the substrate carry-in port to the nozzle in the substrate carrying direction is equal to or shorter than the length of the substrate in the substrate carrying direction. It may be.

  A peeling apparatus according to a first aspect of the present invention includes a peeling means for peeling a plate-like body adsorbed on a stage from the stage, and the plate-like body is a center of a first surface adsorbed on the stage. The arithmetic mean surface roughness of the part is smaller than at least the arithmetic mean surface roughness of one edge along one side of the first surface, and the peeling means includes the stage and the one edge overlapping each other. The plate-like body begins to peel from the overlapping portion.

  A substrate manufacturing method according to a first aspect of the present invention is a substrate manufacturing method in which a roughening process is performed on the first surface of the substrate using the substrate manufacturing system according to the first aspect, A transporting step of transporting the substrate by a transporting device; and a roughening step of roughening the first surface by spraying a reactive gas from the nozzle onto the first surface of the substrate transported by the transporting device. And an airflow control step of causing an airflow whose direction changes according to a relative position between the substrate and the nozzle to flow toward a gap between the nozzle and the substrate.

  The peeling method according to the first aspect of the present invention includes a peeling step of peeling the plate-like body adsorbed on the stage from the stage, and the plate-like body is the center of the first surface adsorbed on the stage. The arithmetic average surface roughness of the portion is at least smaller than the arithmetic average surface roughness of one edge along one side of the first surface, and in the peeling step, the stage and the one edge overlap. The plate-like body begins to peel from the overlapping portion.

  According to the present invention, a substrate that can be easily peeled off from the stage while maintaining the vacuum suction force of the stage on the substrate, and is less likely to cause peeling charging when peeled off from the stage, a substrate manufacturing system, and a peeling An apparatus, a substrate manufacturing method, and a peeling method can be provided.

It is a perspective view which shows the board | substrate which concerns on embodiment of this invention. It is a top view explaining the definition of the center part and edge part of the board | substrate which concerns on embodiment of this invention, and the average surface roughness in each area | region. It is a top view of the board | substrate which concerns on embodiment of this invention. It is a schematic diagram which shows distribution of the arithmetic mean surface roughness of the board | substrate which concerns on embodiment of this invention. It is a side view which shows a part of board | substrate manufacturing system which concerns on embodiment of this invention. It is a figure explaining a 1st airflow generation mechanism. It is a figure explaining a 2nd airflow generation mechanism. It is a figure explaining a 2nd airflow generation mechanism. It is a side view which shows the method of performing a roughening process, controlling the conveyance speed of a board | substrate. It is a side view which shows the method of performing a roughening process, controlling the blowing-out amount of the reactive gas. 1 is a top view of a substrate manufacturing system according to an embodiment of the present invention. 1 is a side view of a substrate manufacturing system according to an embodiment of the present invention. It is the top view and side view of the nozzle vicinity of the board | substrate manufacturing system which can insert a mask material on the gas blowing outlet of a nozzle. It is a figure which shows the 1st example of the peeling method which concerns on embodiment of this invention. It is a figure which shows the 2nd example of the peeling method which concerns on embodiment of this invention.

[substrate]
A substrate 500 according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a perspective view showing a substrate 500. FIG. 2 is a top view for explaining the definition of the central portion 511 and the edge portion 512 of the substrate 500 and the average surface roughness in each region. FIG. 3 and FIG. 4 are schematic views showing a top view of the substrate 500 and the distribution of arithmetic mean surface roughness.

  As shown in FIG. 1, the substrate 500 has two main surfaces, a first surface 510 and a second surface 520 opposite to the first surface 510. The substrate 500 is a rectangular glass substrate used as a substrate for a flat panel display or the like, for example. For example, the substrate 500 may be formed by chamfering the edges and corners of the substrate 500 with the first surface 510 fixed to the stage by vacuum suction, or an electronic member such as a thin film transistor or a transparent electrode on the second surface 520. It is used for the process of forming.

  The arithmetic average surface roughness of the central portion 511 of the first surface 510 is at least smaller than the arithmetic average surface roughness of one edge portion along one side of the first surface 510. By providing the first surface 510 with a distribution of roughness (arithmetic average surface roughness), when adsorbing the substrate 500 to the stage, the first surface 510 adsorbs a portion that is easy to adsorb (a portion with a low roughness). Difficult parts (large roughness parts) can be formed. If the substrate 500 is peeled from a portion that is difficult to be attracted to the stage (a portion having a high degree of roughness), the substrate 500 can be easily peeled, and cracking of the substrate 500 is suppressed.

  Hereinafter, an example of the distribution of roughness formed on the first surface 510 will be specifically described.

As shown in FIG. 1, the first surface 510 has, for example, a first side E1, a second side E2, a third side E3, and a fourth side E4. The first side E1 and the second side E2 face each other, and the third side E3 and the fourth side E4 face each other. Hereinafter, the direction from the second side E2 to the first side E1 along the fourth side E4 is referred to as the X direction, and from the fourth side E4 to the third side E3 along the second side E2. The direction to go is called the Y direction. The length of the first side E1 and the second side E2 is denoted as L _Y , and the length of the third side E3 and the fourth side E4 is denoted as L _X.

The central portion 511 of the first surface 510 has, for example, two sides of a length L _X / 3 parallel to the X direction and a length L parallel to the Y direction centered on the center point 501 of the first surface 510. It is defined as a rectangular area surrounded by two sides of _Y / 3.

As shown in FIGS. 2 and 3, the first surface 510 includes a first edge 512 along the first side E1, a second edge 513 along the second side E2, and a third edge 510. A third edge 514 along the side E3 and a fourth edge 515 along the fourth side E4 are included. The first edge 512, the second edge 513, the third edge 514, and the fourth edge 515 are, for example, the first edge E1, the second edge E2, the third edge E3, and the first edge E3. Each is defined as a rectangular area in the first surface 510 extending inward from the four sides E4 by a certain distance d. Since the first edge portion 512, the second edge portion 513, the third edge portion 514, and the fourth edge portion 515 are regions outside the central portion 511, L _X / 3> d and L _Y / 3> d.

  As will be described later, when the substrate 500 is peeled from the stage, the peeling is started from the edge of the substrate 500. If the roughness of at least one of the first edge portion 512, the second edge portion 513, the third edge portion 514, and the fourth edge portion 515 is increased, peeling is performed from the edge portion. Just start. Therefore, the arithmetic average surface roughness of at least one of the four edges may be larger than the arithmetic average surface roughness of the central part 511.

  The size of the region where the roughness is set large (the size of d) is determined by the relative size between the substrate 500 and the stage mounting surface. For example, the size of d is such that when the substrate 500 is placed on the stage, at least one of the four edges is at a portion where the first surface 510 is in contact with the placement surface of the stage. Use a value that overlaps. For the convenience of peeling the substrate 500 from the stage using a suction pad or the like, it is desirable that the area of the region where the roughness is set to be sufficiently large. Specifically, it is desirable that d ≧ 200 mm.

  The substrate 500 of the present embodiment is defined as one in which the arithmetic average surface roughness of the central portion 511 is at least smaller than the arithmetic average surface roughness of one edge portion. The arithmetic average surface roughness conforms to JIS B0601-2013. The value of arithmetic average surface roughness is measured using an atomic force microscope (product name: SPI-3800N, manufactured by Seiko Instruments Inc.). Specifically, the surface shape (surface profile) of the substrate 500 is measured with an atomic force microscope, and the arithmetic average surface roughness of the substrate 500 is obtained by calculation from the three-dimensional information of the surface shape. As the calculation software, software attached to the atomic force microscope (software name: SPA-400) is used.

  The arithmetic average surface roughness Ra0 of the central portion 511 is defined as the average value of the arithmetic average surface roughness at one or more measurement points of the central portion 511. Preferably, the arithmetic average surface roughness of two or more arbitrary measurement points of the central point 501 and the selected central portion 511 is measured, and the average value of each value is defined as the arithmetic average surface roughness of the central portion 511. . In this case, since the value of the arithmetic average surface roughness of the central portion 511 varies depending on how the measurement points are selected, in this embodiment, for example, the arithmetic average surface roughness value of the central point 501 that is a representative measurement point is set to the center. It is defined as the value of the arithmetic average surface roughness of the part 511.

The center point 501 is equidistant (L _X / 2) from the first side E1 and the second side E2, and is equidistant from the third side E3 and the fourth side E4 (L _Y / 2). This is a point. Using the center point 501 as a measurement point, the surface profile of the measurement region having this measurement point in the center is measured using an atomic force microscope. The measurement region is a rectangular region having a size of 5 μm × 5 μm having two sides parallel to the X direction and two sides parallel to the Y direction with the measurement point as the center. The measurement is performed for a scan area of 5 μm × 5 μm using a dynamic force mode (cantilever: SI-DF40P2) at a scan rate of 1 Hz (number of data in the area: 256 × 256). From the measurement result by the atomic force microscope, the arithmetic average surface roughness Ra of the measurement region is obtained using calculation software. This value is defined as the arithmetic average surface roughness Ra0 of the central portion 511.

  The arithmetic average surface roughness of the edge is defined as the average value of the arithmetic average surface roughness of one or more measurement points on the edge. Preferably, the arithmetic average surface roughness of the center point of the edge and any two or more measurement points of the selected edge is measured, and the average value of each value is defined as the arithmetic average surface roughness of the edge. . In this case, since the value of the arithmetic average surface roughness of the edge varies depending on how the measurement points are selected, in this embodiment, for example, the arithmetic average surface roughness of the edge is defined by the following method. Hereinafter, the definition of the arithmetic average surface roughness of the first edge 512 will be described with reference to FIG. 2, but the definition of the second edge 513, the third edge 514, and the fourth edge 515 is the same. It is.

First, as shown in FIG. 2, three points along the first side E1 of the first surface 510 are set as a first measurement point 502, a second measurement point 503, and a third measurement point 504. . With respect to the X direction, the three measurement points 502 to 504 are positioned d / 2 mm inside from the first side E1. With respect to the Y direction, the first measurement point 502 is positioned d / 2 mm inside from the fourth side E4. The second measurement point 503 is at a position equidistant (L _Y / 2) from the third side E3 and the fourth side E4. The third measurement point 504 is positioned d / 2 mm inside from the third side E3.

  Then, the surface profile of the first measurement region having the first measurement point 502 in the center, the surface profile of the second measurement region having the second measurement point 503 in the center, and the third measurement point 504 in the center. And measuring the surface profile of the third measurement region having the above using an atomic force microscope. The first measurement region, the second measurement region, and the third measurement region are respectively composed of two sides parallel to the X direction and Y centered on the first measurement point, the second measurement point, and the third measurement point. It is a rectangular region having a size of 5 μm × 5 μm and having two sides parallel to the direction. The measurement is performed for a scan area of 5 μm × 5 μm using a dynamic force mode (cantilever: SI-DF40P2) at a scan rate of 1 Hz (number of data in the area: 256 × 256). From the measurement result by the atomic force microscope, the arithmetic average surface roughness Ra1, first measurement point 502, first measurement point 502, second measurement point 503, and third measurement point 504 in the first measurement region are calculated using calculation software. The arithmetic average surface roughness Ra2 of the second measurement region and the arithmetic average surface roughness Ra3 of the third measurement region are obtained. Then, an average value <Ra> of these three arithmetic average surface roughnesses is calculated (<Ra> = (Ra1 + Ra2 + Ra3) / 3). This value <Ra> is defined as the arithmetic average surface roughness Ra 512 at the first edge portion 512. Arithmetic average surface roughness is also calculated for the other edges 513, 514, and 515, and defined as Ra513, Ra514, and Ra515, respectively.

  In this case, the position of the measurement point changes depending on the value of d (edge width), and the value of the arithmetic average surface roughness of the edge changes accordingly. Therefore, in the present embodiment, for example, the value of d is 200 mm, and the average value of the arithmetic average surface roughness of three measurement points located inward by 100 mm from the first side E1 is the arithmetic value of the first edge 512. Defined as average surface roughness.

  FIG. 4A is a schematic diagram showing an example of the distribution of arithmetic average surface roughness on the line connecting AB shown in FIG. 3 in the first surface 510 of the substrate 500. A line connecting A-B is parallel to the X direction and includes a center point 501. FIG. 4B is a schematic diagram showing an example of the distribution of arithmetic average surface roughness on the line connecting the CDs shown in FIG. 3 in the first surface 510 of the substrate 500. A line connecting CD is parallel to the Y direction and includes a center point 501.

  In the example of FIGS. 4A and 4B, the arithmetic average surface roughness Ra0 of the central portion 511 of the first surface 510 is four along each of the four sides E1 to E4 of the first surface 510. Less than any of the arithmetic average surface roughness of edges 512-514. According to this configuration, the substrate 500 can be easily peeled off from any of the four edges 512 to 515 of the substrate 500 regardless of where the substrate 500 is peeled off. Alternatively, the substrate 500 can be peeled off simultaneously from the four edges 512 to 515. In this case, the peeling operation can be performed efficiently in a short time.

[Peeling device]
14 and 15 are diagrams illustrating a method for peeling the substrate 500 from the stage 200. FIG. FIG. 14 is a diagram illustrating a first example of the peeling method, and FIG. 15 is a diagram illustrating a second example of the peeling method. 14 and 15, the first surface 510 of the substrate 500 is hatched in a portion (large roughness region) where the roughness is larger than that of the central portion 511. In the example of FIGS. 14 and 15, the first edge portion 512 and the second edge portion 513 are large roughness regions.

  In addition, although the case where the single board | substrate 500 peels from the stage 200 below is demonstrated, the object which a peeling apparatus peels is not restricted to a single board | substrate. For example, a member having a plate-like shape (hereinafter referred to as “plate-like body”) such as a laminate in which a plurality of substrates are laminated via an adhesive layer or a functional member in which a plurality of substrates are laminated via a functional material. .) As long as it is anything. As an example of a laminated body, the thin glass laminated body described in the patent 5200538 gazette etc. are mentioned, for example. Examples of the functional member include an optical panel in which two glass substrates are bonded with a liquid crystal layer, an organic EL element layer, an electrophoretic element layer, or the like interposed therebetween. When a single substrate is used, a circuit portion such as a wiring may be formed on the main surface.

  FIG. 14A shows a state where the substrate 500 is attracted to the stage 200. The stage 200 includes a plurality of suction holes 210. In FIG. 14 (a), only two suction holes 210a and 210b are shown for convenience, but in reality, three or more suction holes 210 are provided on the entire surface of the stage. With the first surface 510 of the substrate 500 placed on the stage 200, the substrate 500 is vacuum-sucked to the stage 200 by vacuum suction of the gas inside the suction hole 210.

  The central portion 511 of the first surface 510 has a relatively small arithmetic average surface roughness. For this reason, the area where the central portion 511 of the first surface 510 comes into contact with the stage 200 becomes large, and it becomes easy to stick to the stage. The large roughness region (first edge 512 and second edge 513) has a relatively large arithmetic average surface roughness. For this reason, in the large roughness region, the area in contact with the stage 200 is small, and the suction force to the stage is weaker than that of the central portion 511. In this configuration, the suction force becomes weak at the edge of the substrate 500 provided with the large roughness region, but the suction force is kept good in a wide region at the center of the substrate. Fixed.

  As shown in FIGS. 14B and 14C, when the substrate 500 is peeled from the stage 200, the arithmetic average surface roughness becomes larger than the stage 200 and the large roughness region (the central portion 511). The substrate 500 starts to be peeled off from the overlapping portion where the edge portion of the substrate 500 is overlapped. Since the suction force to the stage is weak in the large roughness region, when peeling is performed from the overlapping portion of the large roughness region and the stage 200, the peeling can be performed with a relatively small force. Therefore, peeling of the substrate 500 from the stage 200 becomes easy.

  The arithmetic average surface roughness of the central portion 511 is preferably less than 0.3 nm, more preferably less than 0.2 nm. The arithmetic average surface roughness of the edge is preferably 0.3 to 1.5 nm. When the arithmetic average surface roughness of the central portion 511 is less than 0.3 nm, the adsorption force is kept good at the central portion 511. When the arithmetic average surface roughness of the central part 511 is less than 0.2 nm, the adsorption power is more favorably maintained in the central part 511. When the arithmetic average surface roughness of the edge is 0.3 nm or more, it becomes easy to peel off the substrate 500 from the stage, and further, peeling electrification hardly occurs. If the arithmetic average surface roughness of the edge portion is 1.5 nm or less, the roughening treatment does not take time, and the in-plane strength of the substrate 500 does not become insufficient.

Peeling of the substrate 500 from the stage 200 is performed using a peeling device 400 including a peeling means 300.
In order to easily adsorb the substrate 500 to the stage 200, the stage 200 can include an adsorbing member on the mounting surface. Or in order to prevent the board | substrate 500 being damaged, the stage 200 may be provided with the damage prevention member on the mounting surface.

  14 (b) and 14 (c) show a first example 400a of the peeling apparatus 400. FIG. In the peeling apparatus 400a, the peeling means 300 includes a plurality of adsorption members. In FIG. 14B and FIG. 14C, only two adsorption members 310 a and 310 b that adsorb the edge portion of the substrate 500 are shown for convenience, but in reality, three or more adsorption members are provided on the substrate 500. The entire second 520 surface is adsorbed.

  The adsorption member 310a and the adsorption member 310b are connected to the support member 311a and the support member 311b, respectively. As shown in FIG. 14B, the suction member 310 a and the suction member 310 b are located on the second surface 520 of the substrate 500 in a region behind the overlapping portion where the edge of the first surface 510 of the substrate 500 overlaps. Adsorbed.

  When the substrate 500 is peeled off, as shown in FIG. 14C, the support member 311a and the support member 311b are pulled up in a state where the suction member 310a and the suction member 310b are attracted to the second surface 520. Of the plurality of suction members, the suction member 310a and the suction member 310b arranged at positions facing the overlapping portion are first pulled up. Accordingly, the large roughness region (first edge portion 512 and second edge portion 513) of the substrate 500 is lifted together with the suction member 310a and the suction member 310b. Since the large roughness region is roughened so as to increase the roughness, the suction force with the stage 200 is relatively weak. Therefore, the substrate 500 can be peeled from the stage 200 relatively easily.

  FIG. 15 shows a second example 400 b of the peeling apparatus 400. In the peeling apparatus 400b, the peeling means 300 includes a plurality of lift pins. In FIG. 15A and FIG. 15B, only two lift pins 320a and 320b arranged on the edge of the stage 200 are shown for convenience, but in reality, three or more lift pins are mounted on the stage 200. It is provided on the entire surface.

  The lift pins are provided so as to be immersed in the through holes 220 provided in the stage 200. In FIG. 15A and FIG. 15B, only two through holes 220a and 220b arranged at the edge of the stage 200 are shown for convenience, but in reality, three or more through holes are provided on the stage 200. It is provided on the entire mounting surface. The lift pins 320 a and the lift pins 320 b can protrude from the through holes 220 a and the through holes 220 b to push up the substrate 500 placed on the stage 200.

  As shown in FIG. 15A, when the substrate 500 is placed on the stage 200, the through hole 220 a and the through hole 220 b have large roughness regions (first edge portion 513 and second edge portion 512, respectively). ). That is, the lift pin 310a and the lift pin 320b are arranged in an overlapping portion where the stage 200 and the large roughness region (the first edge portion 513 and the second edge portion 512) overlap.

Of the plurality of lift pins, lift pins 310a and lift pins 320b arranged at positions facing the overlapping portions are first projected from the stage 200 to push up the substrate 500. As a result, the substrate 500 is peeled off from the overlapping portion between the large roughness region and the stage 200. Since the large roughness region is strongly roughened, the suction force with the stage 200 is relatively weak. Therefore, the substrate 500 can be peeled from the stage 200 relatively easily.
In the embodiment of the peeling apparatus, a part of the edge of the substrate 500 protrudes from the stage 200. However, the present invention is not limited to this, and a part of the edge may not protrude from the stage 200. .

[Substrate manufacturing system-1]
Hereinafter, the substrate manufacturing system 1000 according to the first embodiment of the present invention will be described with reference to FIG. FIG. 5 is a side view showing a part of the substrate manufacturing system 1000. In FIG. 5, the right end of the first surface 510 (downstream side in the transport direction of the substrate 500) corresponds to the first side E1 shown in FIG. In FIG. 5, the left end of the first surface 510 (upstream side in the transport direction of the substrate 500) corresponds to the second side E2 shown in FIG. Hereinafter, the transport direction of the substrate 500 is referred to as “substrate transport direction”.

  The substrate manufacturing system 1000 includes a first cleaning tank 1010, a first buffer tank 1020, an etching tank 1030, a second buffer tank 1040, a second cleaning tank 1050, and a transfer device 1070.

  The transfer device 1070 transfers the substrate 500 from the left side to the right side in the drawing. The conveyance device 1070 is, for example, a roller conveyor that includes a plurality of rollers 1071. The plurality of rollers 1071 sequentially pass through the first cleaning tank 1010, the first buffer tank 1020, the etching tank 1030, the second buffer tank 1040, and the second cleaning tank 1050 from the upstream side of the first cleaning tank 1010. In addition, a conveyance path toward the downstream side of the second cleaning tank 1050 is formed.

  For example, the plurality of rollers 1071 transport the substrate 500 while supporting the first surface 510 of the substrate 500. The first surface 510 is, for example, a surface opposite to a surface (second surface 520) on which an electronic member such as a thin film transistor or a transparent electrode is formed. The second surface 520 does not contact the roller 1071. For this reason, the scratch due to the roller 1071 does not attach to the second surface 520.

  The plurality of rollers 1071 rotate in synchronization by a drive control mechanism (not shown). The plurality of rollers 1071 are synchronously rotated in the same direction (clockwise in FIG. 5), whereby the substrate 500 is conveyed horizontally. The conveying device 1070 is not limited to a roller conveyor, and can be realized by means such as a belt conveyor or a robot arm.

  Although not shown, an apparatus for forming and polishing the substrate 500 is provided on the upstream side of the first cleaning tank 1010, for example. On the downstream side of the second cleaning tank 1050, for example, an apparatus for drying and inspecting the substrate 500 is provided.

  The first cleaning tank 1010, the first buffer tank 1020, the second buffer tank 1040, and the second cleaning tank 1050 are respectively a substrate carry-in port into which the substrate 500 is carried by the transfer device 1070 and a substrate 500 by the transfer device 1070. A substrate unloading port from which the substrate is unloaded. The substrate carry-in port and the substrate carry-out port of each tank are provided at the same height and the same size as the substrate carry-in port 1031 and the substrate carry-out port 1032 of the etching tank 1030. The substrate carry-out port of each tank is sequentially connected to the substrate carry-in port of the tank adjacent to the downstream side in the substrate transfer direction. The substrate carry-in port and the substrate carry-out port of each bath are always open, for example, while the substrate 500 is transported from the upstream side of the first cleaning bath 1010 to the downstream side of the second cleaning bath 1050.

  Hereinafter, the manufacturing process of the substrate 500 will be described with reference to FIG.

  The substrate 500 is formed into a ribbon shape by, for example, a float method, and then cut into a substrate 500 having a desired size, a chamfering step of chamfering an end surface of the substrate 500, and a surface of the substrate 500 (for example, the second surface 520). ) Is transferred to the first cleaning tank 1010 through a polishing step. As a polishing method, for example, a method in which slurry is supplied to a substrate and polished is used. The slurry is a dispersion liquid in which abrasive grains are dispersed in a liquid such as water or an organic solvent. For example, cerium oxide is used as the abrasive grains.

  The polished substrate 500 is transferred to the first cleaning tank 1010 by the transfer device 1070. In the first cleaning tank 1010, the abrasive grains are removed from the surface of the substrate 500. In the first cleaning tank 1010, for example, the substrate 500 is first shower-washed, and the abrasive grains on the surface of the substrate 500 are washed away with water. Thereafter, the substrate 500 is subjected to slurry cleaning. Slurry cleaning is a cleaning method in which abrasive grains that could not be removed by shower cleaning are removed using a cleaning means such as a disk brush while spraying a cleaning slurry from a nozzle to a substrate. As the slurry for cleaning, for example, a dispersion liquid in which cerium oxide, calcium carbonate, or magnesium carbonate is dispersed in a liquid such as water or an organic solvent is used.

  The substrate 500 is unloaded from the first cleaning tank 1010 by the transfer device 1070 and is loaded into the first buffer tank 1020. The first buffer tank 1020 is provided in order to prevent the reaction gas from leaking from the substrate carry-in port 1031 to the first cleaning tank 1010. Accordingly, the cleaning step performed in the first cleaning tank 1010 is not contaminated with the reaction gas.

  The first buffer tank 1020 has, for example, a fan filter unit FFU1 on the ceiling and an exhaust port EXH1 on the floor. The fan filter unit FFU1 filters the outside air and introduces it into the first buffer tank 1020 to bring the inside of the first buffer tank 1020 into a positive pressure state. The outside air introduced by the fan filter unit FFU1 is discharged from the exhaust port EXH1 to the outside of the first buffer tank 1020 having a relatively low pressure together with dust and gas inside the first buffer tank 1020.

  The substrate 500 is unloaded from the first buffer tank 1020 by the transfer device 1070 and loaded into the etching tank 1030. Inside the etching tank 1030, a nozzle 1080 that blows a reactive gas onto the first surface 510 of the substrate 500 that is transported by the transport device 1070 is provided. For example, the nozzle 1080 is provided on the lower side in the vertical direction of the transport path of the substrate 500. The nozzle 1080 sprays a reactive gas onto the substrate 500 transported by the transport device 1070 from the lower side in the vertical direction (one side in the vertical direction) to the upper side in the vertical direction (the other side in the vertical direction). As a result, the first surface 510 which is the surface on the lower side in the vertical direction (one side in the vertical direction) of the substrate 500 is roughened.

  The nozzle 1080 includes, for example, a gas supply path (not shown) and a gas suction path (not shown). The upper end of the nozzle 1080 is flat. At the upper end of the nozzle 1080, a gas outlet 1081a of the gas supply path and a gas suction port (not shown) of the gas suction path are provided. The gas suction port is provided between the gas blowing port 1081a and the substrate carry-in port 1031 and between the gas blowing port 1081a and the substrate carry-out port 1032. The gas supply path has a uniform cross section in a direction perpendicular to the paper surface of FIG. The gas outlet 1081a has a slit shape extending in the horizontal direction orthogonal to the substrate transport direction (see FIG. 13A). The width of the gas outlet 1081a (the length in the horizontal direction orthogonal to the substrate transport direction) is slightly larger than the width of the substrate 500 so that the entire surface of the first surface 510 of the substrate 500 can be roughened (see FIG. 13 (a)).

  The gas supply path is connected to a source gas supply device (not shown) provided outside the etching tank 1030. The raw material gas supply device supplies a raw material gas that is a raw material of the reaction gas. The source gas includes, for example, a fluorine-based source gas and a carrier gas.

The fluorine-based source gas is used to generate a fluorine-based reaction component that reacts with the surface of the substrate 500. The fluorine-based reaction component can be generated by converting the fluorine-based source gas into plasma (including decomposition, cold air, activation, ionization, etc.). The carrier gas is used for carrying and diluting the fluorine-based source gas and performing plasma discharge. In the present embodiment, CF ₄ is used as the fluorine-based source gas, and argon is used as the carrier gas. Moreover, below, it demonstrates using hydrogen fluoride (HF) as an example of a fluorine-type reaction component. The fluorine-based source gas is not limited to this, but other perfluorocarbons such as C ₂ F ₆ and C ₃ F _8, hydrofluorocarbons such as CHF ₃ , CH ₂ F ₂ , and CH ₃ F, SF ₆ , NF ₃ , and XeF ₂ Other fluorine-containing compounds such as may be used. The carrier gas is not limited to this, and other inert gas such as helium, neon, or xenon may be used.

  The source gas includes, for example, water vapor. In this embodiment, the source gas supply device includes a water addition unit that adds water to hydrogen fluoride and argon. The water addition unit is, for example, a humidifier that supplies liquid water as saturated water vapor. The amount of water added can be adjusted by adjusting the temperature of the humidifier. By adjusting the amount of water added, the water vapor partial pressure in the raw material gas can be set. This makes it possible to change the condensation temperature of the fluorine-based reaction component and water vapor generated by plasmatization (that is, the temperature at which hydrofluoric acid that reacts with the substrate is generated).

  A plasma generation unit (not shown) is provided in any part of the passage through which the source gas is supplied from the source gas supply device to the gas outlet 1081a. The plasma generation unit includes a pair of electrodes. The pair of electrodes are arranged with a passage through which the source gas is supplied. One of the pair of electrodes is connected to a power source, and the other is grounded. When a high voltage is applied from the power source, an electric field is generated between the pair of electrodes, and discharge is performed. Thus, the source gas is turned into plasma between the pair of electrodes, and hydrogen fluoride that reacts with the surface of the substrate 500 is generated. The source gas is turned into plasma and becomes a reaction gas. The reactive gas is blown to the first surface 510 of the substrate 500 from the gas outlet 1081a.

  A top plate 1082 is provided at a position facing the nozzle 1080 across the conveyance path of the substrate 500. The top plate is provided horizontally above the nozzle 1080 so as to face the upper end of the nozzle 1080. After the substrate 500 is carried in from the substrate carry-in port, it passes between the upper end of the nozzle 1080 and the lower surface of the top plate 1082, and is carried out from the substrate carry-out port 1032.

  While the substrate 500 passes through the upper end of the nozzle 1080, the reaction gas blown out from the gas outlet 1081a fills the gap 1081 between the first surface 510 of the substrate 500 and the nozzle 130. While the first surface 510 is exposed to the reaction gas, the reaction gas condenses on the first surface 510 and hydrofluoric acid is produced. Thereby, the first surface 510 is roughened.

  On the lower surface of the top plate 1082, a plate-like heater (not shown) capable of adjusting the temperature is provided. With this heater, the regions of the first surface 510 and the second surface 520 of the substrate 500 that are located immediately below the top plate 1082 can be heated. The width of the heater (the length in the horizontal direction perpendicular to the substrate transport direction) is slightly larger than the width of the substrate 500 so that the entire second surface 520 of the substrate 500 can be heated.

  The temperature at which the substrate 500 is carried into the etching bath 1030 and the temperature of the heater of the top plate 1082 are appropriately set in accordance with the condensation temperature of hydrogen fluoride and water vapor. Accordingly, while the substrate 500 passes over the nozzle 1080, the temperature of the first surface 510 can be equal to or lower than the condensation temperature, and the temperature of the second surface 520 can be equal to or higher than the condensation temperature. For this reason, hydrogen fluoride and water vapor are condensed only on the first surface 510 to form hydrofluoric acid. Thereby, even if a part of the reaction gas blown out from the blowout port 1081a enters the gap between the top plate 1082 and the second surface 520, the etching of the substrate 500 is selected only for the first surface 510. Can be done automatically. Therefore, the second surface 520 can be kept smooth without being roughened.

  The roughened substrate 500 is unloaded from the etching tank 1030 by the transfer device 1070 and is loaded into the second buffer tank 1040. The second buffer tank 1040 is provided to prevent the reaction gas from leaking from the substrate carry-out port 1032 to the second cleaning tank 1050. Thereby, the cleaning step performed in the second cleaning tank 1050 is not contaminated with the reaction gas.

  The second buffer tank 1040 has, for example, a fan filter unit FFU2 on the ceiling and an exhaust port EXH2 on the floor surface. The fan filter unit FFU2 filters the outside air and introduces it into the second buffer tank 1040 to bring the second buffer tank 1040 into a positive pressure state. The outside air introduced by the fan filter unit FFU2 is discharged from the exhaust port EXH2 to the outside of the second buffer tank 1040 having a relatively low pressure together with dust and gas inside the second buffer tank 1040.

  The substrate 500 is unloaded from the second buffer tank 1040 by the transfer device 1070 and is loaded into the second cleaning tank 1050. The second cleaning tank 1050 includes a high pressure shower 1051. In the second cleaning tank 1050, both surfaces of the substrate 500 are cleaned to remove glass cullet, etching by-products, and the like generated by the roughening. The cleaning method is not particularly limited, and examples include high pressure shower cleaning, brushing cleaning, ultrasonic cleaning, or a combination thereof. The substrate 500 that has been cleaned is unloaded from the second cleaning tank 1050 by the transfer device 1070 and is subjected to a drying process or an inspection process.

  As described above, the first buffer tank 1020 and the second buffer tank 1040 are provided to prevent the tanks provided before and after the first buffer tank 1020 and the second buffer tank 1040 from interfering with each other. Provided. In order to reliably achieve this object, the lengths of the first buffer tank 1020 and the second buffer tank 1040 in the substrate transport direction are usually set sufficiently long. Specifically, the length of the first buffer tank 1020 and the second buffer tank 1040 in the substrate transport direction is set longer than the length of the substrate 500 in the substrate transport direction.

  In contrast, in the substrate manufacturing system 1000 according to the present embodiment, the lengths of the first buffer tank 1020 and the second buffer tank 1040 in the substrate transport direction are set shorter than the length of the substrate 500 in the substrate transport direction. . Thereby, for example, an air flow generated in the second cleaning tank 1050 is transmitted to the vicinity of the nozzle 1080 via the substrate 500, or pressure fluctuations in the first buffer tank 1020 and the second buffer tank 1040 are transferred to the nozzle. To the vicinity of 1080. Thereby, an air flow is generated in the vicinity of the nozzle 1080, and the flow of the reactive gas blown out from the nozzle 1080 changes.

  The direction and strength of the airflow generated in the vicinity of the nozzle 1080 changes according to the relative position between the substrate 500 and the nozzle 1080. Thereby, the roughness of the first surface 510 of the substrate 500 varies depending on the position of the substrate 500. For example, the arithmetic average surface roughness of the central portion 511 of the first surface 510 is changed to the first edge 512, the first The arithmetic average surface roughness of the second edge 513, the third edge 514, and the fourth edge 515 can be made smaller.

  Hereinafter, a mechanism for generating an air flow in the vicinity of the nozzle 1080 will be described with reference to FIGS. FIG. 6 is a diagram illustrating the first airflow generation mechanism, and FIGS. 7 and 8 are diagrams illustrating the second airflow generation mechanism.

[First air flow generation mechanism]
First, the first airflow generation mechanism will be described with reference to FIG. FIG. 6 is a side view showing a configuration on the downstream side of the etching bath 1030.

  As shown in FIG. 6, when the length of the second buffer tank 1040 in the substrate transport direction is shortened so that the substrate 500 straddles between the etching tank 1030 and the second cleaning tank 1050, the tip of the substrate 500 The cleaning process is performed in the portion (downstream side in the substrate transport direction), and the roughening process is performed in the rear end portion (upstream side in the substrate transport direction) of the substrate 500. In the second cleaning tank 1050, a high-pressure shower 1051 provided on the lower side in the vertical direction of the substrate 500 sprays high-pressure cleaning water toward the first surface 510 of the substrate 500. As a result, a first air flow FL1 is generated on the lower side in the vertical direction of the substrate 500 from the lower side in the vertical direction toward the upper side in the vertical direction. The high-pressure shower 1051 provided on the downstream side of the nozzle 1080 in the substrate transport direction is a first air flow FL1 directed from the lower side in the transport path to the upper side in the vertical direction with respect to the substrate 500 on which the reactive gas is blown by the nozzle 1080. It functions as a first airflow generation device that causes the

  In the substrate manufacturing system 1000 illustrated in FIG. 6, when the substrate 500 is transported to the position where the nozzle 1080 is installed by the transport device 1070, the reactive gas is sprayed from the nozzle 1080 toward the first surface 510 of the substrate 500. . The substrate 500 is transported to the position where the high-pressure shower 1051 is installed by the transport device 1070 while the first surface 510 is roughened by the reaction gas.

  When the substrate 500 is transported to the position where the high-pressure shower 1051 is installed, the first airflow FL1 generated by the high-pressure shower 1051 acts on the first surface 510 of the substrate 500. The gas (air inside the second cleaning tank 1050) that has reached the substrate 500 in the first air stream FL1 travels along the first surface 510 of the substrate 500 and enters the gap 1081 between the nozzle 1080 and the substrate 500. Flows in. At this time, in the nozzle 1080, the second edge portion 513 along the second side E2 on the upstream side in the substrate transport direction of the substrate 500 is roughened.

  The reactive gas blown out from the nozzle 1080 flows in the substrate transport direction together with the substrate 500 after being blown onto the substrate 500. The flow of the reaction gas is disturbed by the gas that travels along the first surface 510 from the downstream side in the substrate transport direction toward the nozzle 1080, and the reaction gas stays in the vicinity of the nozzle 1080. Thereby, the roughness of the first surface 510 of the substrate 500 after the first air flow FL1 acts is greater than that before the first air flow FL1 acts. As a result, the arithmetic average surface roughness of the central portion of the first surface 510 is greater than the arithmetic average surface roughness of the second edge portion 513 along the second side E2 on the upstream side in the substrate transport direction of the first surface 510. Becomes smaller.

  The above is the first airflow generation mechanism. As described above, in the substrate manufacturing system 1000, the first airflow generation mechanism causes the arithmetic average surface roughness at the center of the first surface 510 to be higher than that of the first surface 510 on the upstream side in the substrate transport direction. It becomes smaller than the arithmetic mean surface roughness of the second edge 513 along the second side E2. Therefore, for example, as illustrated in FIG. 14, when the substrate 500 is attracted to the stage 200, the attracting force increases at the central portion 511 of the substrate 500, and the attracting force decreases at least at the second edge 513 of the substrate 500. Become. Therefore, for example, if the substrate 500 is peeled from the second edge portion 513, the substrate 500 can be easily peeled, and cracking of the substrate 500 is suppressed.

[Second airflow generation mechanism]
Next, the second airflow generation mechanism will be described with reference to FIGS. FIG. 7 is a side view showing the configuration from the first buffer tank 1020 to the second buffer tank 1040. FIG. 8 is a front view of the nozzle 1080 when the nozzle 1080 is viewed from the substrate carry-in entrance 1031 side, and shows the flow of the reactive gas in the vicinity of the nozzle 1080 when the substrate 500 passes above the nozzle 1080.

  As shown in FIG. 7A, when the length of the first buffer tank 1020 in the substrate transport direction is shortened so that the substrate 500 straddles between the etching tank 1030 and the first cleaning tank, the substrate 500 While the surface roughening process is being performed at the front end portion, the rear end portion of the substrate 500 divides the space inside the first buffer tank 1020 vertically. The fan filter unit FFU1 and the fan filter unit FFU2 are always operating while the substrate 500 is transported from the first cleaning tank to the second cleaning tank. Therefore, the fan filter unit FFU1 provided on the upstream side in the substrate transport direction of the nozzle 1080 is second from the upper side in the transport path to the lower side in the vertical direction with respect to the substrate 500 on which the reactive gas is blown by the nozzle 1080. It functions as a second airflow generation device that causes the airflow FL2 to act. The fan filter unit FFU2 provided on the downstream side in the substrate transport direction of the nozzle 1080 functions as a third airflow generation device that generates a third airflow FL3 from the upper side in the vertical direction to the lower side in the vertical direction of the transport path.

  For example, as shown in FIG. 7A, when the tip of the substrate 500 reaches the vicinity of the nozzle 1080, the first buffer tank 1020 is divided into upper and lower spaces by the substrate 500. At this time, the fan filter unit FFU1 introduces outside air, so that the space above the first buffer tank 1020 becomes positive pressure. Since the introduced outside air is blocked by the substrate 500, the space below the first buffer tank 1020 has a relatively negative pressure. On the other hand, the entire space of the second buffer tank 1040 is positive when the fan filter unit FFU2 introduces outside air. In the etching tank 1030, a space between the substrate carry-in port 1031 and the nozzle 1080 is divided by the substrate 500. Since the space below the substrate 500 is connected to the space below the first buffer tank 1020 via the substrate carry-in port 1031, it becomes negative pressure. On the other hand, since the space between the nozzle 1080 and the substrate carry-out port 1032 is connected to the entire space of the second buffer tank 1040 via the substrate carry-out port 1032, the pressure is positive. As a result, an air flow from the substrate carry-out port 1032 toward the substrate carry-in port 1031 is generated inside the etching tank 1030.

  As shown in FIG. 7C, when the rear end portion of the substrate 500 is transported to the vicinity of the nozzle 1080, since the substrate 500 is not present in the first buffer tank 1020, the fan filter unit FFU1 removes the outside air. By introducing, the whole space of the first buffer tank 1020 becomes positive pressure. On the other hand, the second buffer tank 1040 is divided into upper and lower spaces by the substrate 500. At this time, the fan filter unit FFU2 introduces outside air, so that the space above the second buffer tank 1040 becomes positive pressure. Since the introduced outside air is blocked by the substrate 500, the space below the second buffer tank 1040 has a relatively negative pressure. In the etching tank 1030, the space between the nozzle 1080 and the substrate carry-out port 1032 is divided by the substrate 500. Since the space below the substrate 500 is connected to the space below the second buffer tank 1040 via the substrate carry-out port 1032, it becomes negative pressure. On the other hand, since the space between the nozzle 1080 and the substrate carry-in port 1031 is connected to the entire space of the first buffer tank 1020 via the substrate carry-in port 1031, the pressure is positive. As a result, an air flow from the substrate carry-in port 1031 toward the substrate carry-out port 1032 is generated inside the etching tank 1030.

  As shown in FIG. 7B, in the middle of the transfer of the substrate 500 from the substrate carry-in port 1031 to the substrate carry-out port 1032, the space of the first buffer tank 1020 and the second buffer tank 1040 is used as the substrate. Depending on whether or not 500 is divided, various atmospheric pressure distributions are realized.

  As described above, different pressure distributions occur before and after the nozzle 1080 depending on the relative position between the substrate 500 and the nozzle 1080. Since the plurality of substrates 500 are successively transferred sequentially through the substrate carry-in port 1031 and the substrate carry-out port 1032, the pressure difference before and after the nozzle 1080 varies with time. Such a pressure difference becomes large when the length of the first buffer tank 1020 from the substrate carry-in port 1021 to the nozzle 1080 in the substrate transport direction is equal to or shorter than the length of the substrate 500 in the substrate transport direction.

  In particular, as shown in FIG. 7A, when the tip of the substrate 500 reaches the vicinity of the nozzle 1080, an air flow is generated from the downstream side in the substrate transport direction to the upstream side in the substrate transport direction. At this time, the nozzle 1080 roughens the first edge 512 (see FIG. 3) along the first side E1 of the first surface 510 on the downstream side in the substrate transport direction. The reactive gas blown out from the nozzle 1080 flows in the substrate transport direction together with the substrate 500 after being blown onto the substrate 500. However, the flow of the reaction gas is disturbed by the air flow generated in the vicinity of the nozzle 1080 from the downstream side in the substrate transport direction toward the upstream side in the substrate transport direction, and the reaction gas stays in the vicinity of the nozzle 1080. As a result, the arithmetic average surface roughness of the central portion 511 of the first surface 510 is at least the arithmetic average surface of the first edge 512 along the first side E1 on the downstream side in the substrate transport direction of the first surface 510. It becomes smaller than the roughness.

  Further, as shown in FIG. 8, when the substrate 500 passes above the nozzle 1080, the reactive gas is blown from the nozzle 1080 to the first surface 510. The reactive gas in the gap 1081 between the substrate 500 and the nozzle 1080 tends to flow along the first surface 510 toward the side surface of the substrate 500 as indicated by the black arrow in FIG.

  On the other hand, when the substrate 500 passes above the nozzle 1080, a relatively positive pressure state is generated on the second surface 520 side of the substrate 500 and a relatively negative pressure state is generated on the first surface 510 side ( (See FIG. 7 (a)). At this time, when the gas flow in the vicinity of the nozzle 1080 is viewed in a plane perpendicular to the substrate transport direction, the second surface 520 side is the second side surface of the substrate 500 as shown by the white arrows in FIG. An airflow that circulates toward the one surface 510 is generated.

  This air flow pushes back the reaction gas that was about to flow toward the side surface of the substrate 500. As a result, the reaction gas stays near the side surface of the substrate 500. Thereby, the arithmetic mean surface roughness of the central portion of the first surface 510 is the third edge 514 (see FIG. 3) along the third side E3 parallel to the substrate transport direction of the first 510, and It becomes smaller than the arithmetic mean surface roughness of the 4th edge part 515 (refer FIG. 3) along the 4th edge | side E4.

  The above is the second airflow generation mechanism. As described above, in the substrate manufacturing system 1000, the second airflow generation mechanism causes the arithmetic average surface roughness of the center portion of the first surface 510 to be lower than that of the first surface 510 on the downstream side in the substrate transport direction. It becomes smaller than the arithmetic mean surface roughness of the first edge 512 along one side E1. In addition, the arithmetic average surface roughness of the central portion of the first surface 510 has a third edge 514 along the third side E3 parallel to the substrate transport direction of the first surface 510, and a fourth side E4. Smaller than the arithmetic average surface roughness of the fourth edge 515 along the line. Therefore, for example, as illustrated in FIG. 14, when the substrate 500 is attracted to the stage 200, the attracting force is increased at the central portion 511 of the substrate 500, and at least the first edge 512 and the third edge of the substrate 500. The adsorption force is reduced at the portion 514 and the fourth edge portion 515.

  Due to the synergistic effect of the first airflow generation mechanism and the second airflow generation mechanism, in the substrate manufacturing system 1000, the arithmetic average surface roughness of the center portion of the first surface 510 is four in the first surface 510. It becomes smaller than any of the arithmetic average surface roughness of the four edges 512 to 515 along the sides E1 to E4, respectively. Thus, the substrate 500 can be easily peeled off from any of the four edges of the substrate 500. Alternatively, the substrate 500 can be peeled off simultaneously from the four edges. In this case, the peeling operation can be performed efficiently in a short time.

  As described above, in the substrate manufacturing system 1000 of this embodiment, the fan filter unit FFU1, the fan filter unit FFU2, and the high-pressure shower 1051 function as an airflow control unit that controls the airflow between the substrate 500 and the nozzle 1080. The airflow control unit causes an airflow whose direction changes according to the relative position between the substrate 500 and the nozzle 1080 to flow toward the gap 1081 between the nozzle 1080 and the substrate 500. The airflow generated by the airflow control means flows into the gap 1081 between the nozzle 1080 and the substrate 500, thereby disturbing the flow of the reactive gas in the vicinity of the nozzle 1081, for example, the central portion 511 of the first surface 510. Is smaller than the arithmetic average surface roughness of at least one edge along one side of the first surface 510. Therefore, when the substrate 500 manufactured by the substrate manufacturing system 1000 is attracted to the stage, the attracting force increases at the central portion 511 of the substrate 500, and the attracting force decreases at least at one edge portion of the substrate 500. Therefore, for example, if the substrate 500 is peeled from one edge portion where the adsorptive power is reduced, the substrate 500 can be easily peeled, and cracking of the substrate 500 is suppressed.

  Although the first embodiment of the substrate manufacturing system has been described above, the configuration of the substrate manufacturing system is not limited to the above. In the substrate manufacturing system 1000, the nozzle 1080 is disposed on the lower side in the vertical direction of the transport path of the substrate 500, and the surface on the lower side in the vertical direction of the substrate 500 is roughened. However, the nozzle 1080 may be arranged on the upper side in the vertical direction of the transport path of the substrate 500, and the surface on the upper side in the vertical direction of the substrate 500 may be roughened. Even in this case, the edge portion of the substrate 500 can be made to have a roughness higher than that of the central portion 511 of the substrate 500 by at least the first airflow generation mechanism. Further, instead of the fan filter unit FFU1 and the fan filter unit FFU2, the first buffer tank 1020 and the second buffer tank 1040 generate airflows that generate airflows from the lower side in the vertical direction to the upper side in the vertical direction of the transport path, respectively. By providing the device, the edge portion of the substrate 500 can have a roughness higher than that of the central portion 511 of the substrate 500.

  Further, in the substrate manufacturing system 1000 described above, the surface roughening treatment of the substrate 500 is performed using the first air flow generation mechanism and the second air flow generation mechanism. The substrate 500 may be roughened using only one of the airflow generation mechanisms.

[Substrate manufacturing system-2]
Hereinafter, the substrate manufacturing system 1100 according to the second embodiment of the present invention will be described with reference to FIG. FIG. 9 is a side view showing a method for performing the surface roughening process while controlling the conveyance speed of the substrate. In FIG. 9, components common to the substrate manufacturing system 1000 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. The length of the thick arrow in FIG. 9 represents the transport speed of the substrate 500, and when the length of the arrow is long, the transport speed is fast.

  The substrate manufacturing system 1100 includes a transfer device 1070, a nozzle 1080, an etching tank 1030, and a control device 1110. The configurations of the transfer device 1070, the nozzle 1080, and the etching tank 1030 are the same as those of the substrate manufacturing system 1000 according to the first embodiment.

  The roughness of the first surface 510 of the substrate 500 is determined by two factors: the concentration of the reaction gas to which the first surface 510 of the substrate 500 is exposed and the accumulated time of exposure to the reaction gas. The accumulated time is mainly determined by the conveyance speed of the substrate 500. When the concentration of the reaction gas is not changed, the roughness on the first surface 510 of the substrate 500 decreases as the transport speed of the substrate 500 increases in the substrate transport direction.

  The control device 1110 controls the transport speed of the substrate 500 transported by the transport device 1070. The control device 1110 acquires information on the relative position of the substrate 500 with respect to the nozzle 1080, for example. For example, the control device 1110 calculates an appropriate conveyance speed based on the acquired information on the relative position. For example, the control device 1110 transmits the calculated transport speed to the drive control mechanism included in the transport device 1070 to change the transport speed.

  For example, as shown in FIG. 9A, when the front end portion of the substrate 500 (for example, the first edge portion 512 along the first side E1; see FIG. 3) is roughened by the nozzle 1080, Reduce the transport speed. As shown in FIG. 9B, when the center of the substrate 500 is roughened by the nozzle 1080, the transport speed is increased. When the rear end portion of the substrate 500 (for example, the second edge portion 513 along the second side E2; see FIG. 3) is roughened by the nozzle 1080 as shown in FIG. Reduce the transport speed. As described above, the arithmetic average surface roughness of the central portion of the first surface 510 is set to the arithmetic operation of the first edge portion 512 along the first side E1 orthogonal to the substrate transport direction by the transport device 1070 of the first surface 510. The average surface roughness and the arithmetic average surface roughness of the second edge 513 along the second side E2 can be made smaller.

[Substrate manufacturing system-3]
Hereinafter, a substrate manufacturing system 1200 according to a third embodiment of the present invention will be described with reference to FIG. FIG. 10 is a side view showing a method for performing the surface roughening process while controlling the blowing amount of the reaction gas. In FIG. 10, the same reference numerals are given to components common to the substrate manufacturing system 1000 according to the first embodiment, and detailed description thereof is omitted. The width of the thick arrow in FIG. 10 represents the amount of reaction gas blown out. When the width of the arrow is wide, the amount of blowout is large.

  The substrate manufacturing system 1200 includes a transfer device 1070, a nozzle 1080, an etching tank 1030, and a control device 1210. The configurations of the transfer device 1070, the nozzle 1080, and the etching tank 1030 are the same as those of the substrate manufacturing system 1000 according to the first embodiment.

  The roughness of the first surface 510 of the substrate 500 is determined by two factors: the concentration of the reaction gas to which the first surface 510 of the substrate 500 is exposed and the accumulated time of exposure to the reaction gas. The accumulated time is mainly determined by the conveyance speed of the substrate 500. When the transport speed of the substrate 500 is not changed, the roughness on the first surface 510 of the substrate 500 increases as the concentration of the reaction gas increases.

  The control device 1210 controls the transport speed of the substrate 500 transported by the transport device 1070. For example, the control device 1210 acquires information on the relative position of the substrate 500 with respect to the nozzle 1080. For example, the control device 1210 calculates an appropriate reaction gas blowing amount based on the acquired information on the relative position. For example, the control device transmits the calculated blowing amount to a source gas supply device (not shown) connected to the nozzle 1080 to change the supply amount of the source gas.

  For example, as shown in FIG. 10A, when the tip of the substrate 500 (first edge 512 along the first side E1; see FIG. 3) is roughened by the nozzle 1080, the reaction gas Increase the amount of blowout. As shown in FIG. 10B, when the center of the substrate 500 is roughened by the nozzle 1080, the amount of reaction gas blown is reduced. As shown in FIG. 10C, when the rear end portion of the substrate 500 (second edge portion 513 along the second side E <b> 2, see FIG. 3) is roughened by the nozzle 1080, the reaction gas again Increase the amount of blowout. As described above, the arithmetic average surface roughness of the central portion of the first surface 510 is set to the arithmetic operation of the first edge portion 512 along the first side E1 orthogonal to the substrate transport direction by the transport device 1070 of the first surface 510. The average surface roughness and the arithmetic average surface roughness of the second edge 513 along the second side E2 can be made smaller.

  In the substrate manufacturing system 1200 of the present embodiment, the distribution of roughness is formed on the first surface 510 of the substrate 500 by controlling only the amount of ejection of the reactive gas. However, in combination with this control, the distribution speed of the substrate 500 is controlled to form a roughness distribution on the first surface 510 of the substrate 500 as in the substrate manufacturing system 1100 according to the third embodiment. You can also. That is, the control device 1210 determines at least one of the amount of reaction gas blown from the nozzle 1080 and the transport speed of the substrate 500 transported by the transport device 1070 according to the relative position between the substrate 500 and the nozzle 1080. , The arithmetic average surface roughness of the center portion of the first surface 510 is at least one edge portion along one side perpendicular to the substrate transport direction by the transport device 1070 of the first surface 510. It can be made smaller than the average surface roughness.

[Board Manufacturing System-4]
Hereinafter, a substrate manufacturing system 1300 according to a fourth embodiment of the present invention will be described with reference to FIG. FIG. 11 is a top view of the substrate manufacturing system 1300. In FIG. 11, components common to the substrate manufacturing system 1000 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  The substrate manufacturing system 1300 includes a first roughening processor 1310, a second roughening processor 1320, and a rotating device 1330.

  The first roughening processing unit 1310 includes a first nozzle (not shown), a first transfer device 1340, and a first control device (not shown). The second roughening processing unit 1320 includes a second nozzle (not shown), a second transport device 1350, and a second control device (not shown).

  The first roughening processing unit 1310 and the second roughening processing unit 1320 have the same configuration as the substrate manufacturing system 1200 according to the third embodiment. That is, the first nozzle and the second nozzle have the same configuration as the nozzle 1080 of the substrate manufacturing system 100 according to the first embodiment. The first transfer device 1340 and the second transfer device 1350 have the same configuration as the transfer device 1070 of the substrate manufacturing system 100 according to the first embodiment. The first control device and the second control device have the same configuration as the control device 1210 of the substrate manufacturing system 1200 according to the third embodiment.

  The transport direction of the first transport device 1340 is provided, for example, in the same direction as the transport direction of the second transport device 1350. A rotation device 1330 is provided between the first transport device 1340 and the second transport device 1350. The rotating device 1330 is, for example, a turntable that can rotate at an arbitrary angle within the mounting surface of the substrate 500.

  The substrate 500 is arranged, for example, by the first transfer device 1340 such that the first side E1 and the second side E2 (see FIG. 3) are orthogonal to the substrate transfer direction of the first transfer device 1340. It is conveyed at 500a. Then, after the first surface 510 is roughened by the reaction gas blown from the first nozzle in the first roughening processing unit 1310, the first surface 510 is conveyed to the rotating device 1330. The rotating device 1330 provided on the downstream side in the substrate transport direction of the first nozzle (first roughening processing unit 1310) changes the direction of the substrate 500 that has been roughened by the reaction gas blown out by the first nozzle. For example, it is rotated counterclockwise by an angle of 90 degrees when viewed from above the substrate 500. The substrate 500 is transported by the second transport device 1350 in an arrangement 500b such that the third side E3 and the fourth side E4 (see FIG. 3) are orthogonal to the substrate transport direction of the second transport device 1350. The

  The first control device controls at least one of the amount of reaction gas blown from the first nozzle and the transport speed of the substrate 500 transported by the first transport device 1340 (FIG. 9, FIG. 9). 10). Therefore, the first surface roughening processing unit 1310 sets the arithmetic average surface roughness of the central portion 511 of the first surface 510 to be perpendicular to the substrate transport direction of the first surface 510 by the first transport device 1340. The arithmetic average surface roughness of the first edge 512 along the side E1 and the arithmetic average surface roughness of the second edge 513 along the second side E2 can be made smaller (see FIG. 3). .

  The second control device controls at least one of the amount of reaction gas blown out from the second nozzle and the transport speed of the substrate 500 transported by the second transport device 1350 (FIG. 9, FIG. 9). 10). Therefore, the second surface roughening processing unit 1320 sets the arithmetic average surface roughness of the central portion 511 of the first surface 510 to the third surface orthogonal to the substrate transport direction by the second transport device 1350 of the first surface 510. The arithmetic average surface roughness of the third edge 514 along the side E3 and the arithmetic average surface roughness of the fourth edge 515 along the fourth side E4 can be made smaller (see FIG. 3). .

  As described above, according to the substrate manufacturing system 1300, the roughness can be reduced at the central portion 511 of the substrate 500, and the roughness can be increased at the four edges 512 to 515 of the substrate 500 (see FIG. 3). reference). Therefore, when the substrate 500 is attracted to the stage, the attracting force is increased at the central portion 511 of the substrate 500, and the attracting force is decreased at the four edge portions 512 to 515 of the substrate 500. Therefore, the substrate 500 can be easily peeled off from any of the four edges 512 to 515 of the substrate 500. Alternatively, the substrate 500 can be peeled off simultaneously from the four edges 512 to 515. In this case, the peeling operation can be performed efficiently in a short time.

[Board manufacturing system-5]
Hereinafter, a substrate manufacturing system 1400 according to a fifth embodiment of the present invention will be described with reference to FIG. FIG. 12 is a side view of the substrate manufacturing system 1400. In FIG. 12, components common to the substrate manufacturing system 1000 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  The substrate manufacturing system 1400 includes a transfer device 1070, a nozzle 1080, and an etching tank 1030. The configurations of the transfer device 1070, the nozzle 1080, and the etching tank 1030 are the same as those of the substrate manufacturing system 1000 according to the first embodiment.

  In the substrate manufacturing system 1400, a mask material 1410 is provided on the first surface 510 of the substrate 500 to be transported. The mask material 1410 is provided, for example, by forming an organic thin film on the first surface 510 by a method such as spin coating as in the case of a photoresist. The mask material 1410 is formed in a range (see FIG. 3) that covers the central portion 511 of the first surface 510 and does not cover the first edge portion 512 to the fourth edge portion 515.

  Note that the mask material 1410 that is an organic substance may be gradually removed in the course of the plasma treatment in the nozzle 1080. Even in this case, the portion where the mask material 1410 is formed is still exposed to a smaller amount of the reactive gas than the portion where the mask material 1410 is not formed.

  Of the first surface 510 of the substrate 500, one side on the downstream side in the transport direction is the first side E1, one side upstream on the substrate transport direction is the second side E2, and two sides parallel to the substrate transport direction are the third side. Let E3 and the fourth side E4 (see FIG. 3). The first edge portion 512 along the first side E1 is not covered with the mask material 1410. For this reason, as shown in FIG. 12A, when the downstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080, the first edge 512 is exposed to the amount of reaction gas blown from the nozzle 1080, resulting in a rough surface. It becomes.

  The central portion 511 is covered with a mask material 1410. On the other hand, the third edge 514 along the third side E3 and the fourth edge 515 along the fourth side E4 are not covered with the mask material 1410. For this reason, as shown in FIG. 12B, when the intermediate region of the substrate 500 passes through the nozzle 1080, the third edge portion 514 and the fourth edge portion 515 are the amount of reaction gas blown out from the nozzle 1080. To roughen the surface. On the other hand, the central portion 511 is roughened by being exposed to a smaller amount of reaction gas than the amount blown out from the nozzle 1080.

  The second edge 513 along the second side E <b> 2 is not covered with the mask material 1410. Therefore, as shown in FIG. 12C, when the upstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080, the second edge portion edge 513 is exposed to the amount of reaction gas blown out from the nozzle 1080. Roughened.

  After the substrate 500 is unloaded from the etching bath 1030, the mask material 1410 formed on the substrate 500 is removed. The removal can be performed by, for example, a method of dissolving the mask material 1410 by immersing the substrate 500 in an organic solvent.

  As described above, when the substrate 500 on which the mask material 1410 is formed is transported to the substrate manufacturing system 1400, the amount of the reaction gas to which the central portion 511 of the first surface 510 of the substrate 500 is actually exposed is the first edge portion. 512 to the fourth edge 515 are less than the amount of reaction gas to which they are exposed. As a result, the roughness is reduced at the central portion 511 of the substrate 500, and the roughness is increased at the four edges 512 to 515 of the substrate 500.

[Board Manufacturing System-6]
Hereinafter, a substrate manufacturing system 1500 according to the sixth embodiment of the present invention will be described with reference to FIG. FIG. 13 is a top view and a side view of the vicinity of the nozzle 1080 of the substrate manufacturing system 1500 in which the mask material 2000 can be inserted on the gas outlet 1081a of the nozzle 1080. In FIG. 13, components common to the substrate manufacturing system 1000 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  The substrate manufacturing system 1500 includes a nozzle 1080. FIGS. 13A, 13C, and 13E are top views of the state where the substrate 500 passes over the nozzle 1080, and FIGS. 13B, 13D, and 13F are diagrams. It is a side view corresponding to 13 (a), (c), (e). 13A and 13B show a state in which the downstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080. FIG. FIG. 13C and FIG. 13D show a state where an intermediate region of the substrate 500 passes through the nozzle 1080. FIG. 13E and FIG. 13F show a state in which the upstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080.

  As shown in FIGS. 13A, 13C, and 13E, the nozzle 1080 has a slit-like gas outlet 1081a extending in the width direction of the substrate 500 (the length in the horizontal direction orthogonal to the substrate transport direction). Have. The width of the gas outlet 1081a is set slightly longer than the width of the substrate 500 so that the reaction gas reaches the entire width direction of the first surface 510 of the substrate 500.

  In the substrate manufacturing system 1700, as shown in FIGS. 13C and 13D, a mask material 1510 is provided between the nozzle 1080 and the first surface 510. The mask material 1510 is a plate-like member. Mask material 1510 has a thickness shorter than the distance of gap 1081 between nozzle 1080 and first surface 510. Mask material 1510 is inserted into gap 1081 in order to reduce the amount of reaction gas to which central portion 511 of first surface 510 is exposed. The width of the mask material 1510 is shorter than the width of the substrate 500 so that two edges parallel to the substrate transport direction of the substrate 500 are exposed to the reaction gas. In order to make the central portion 511 of the first surface 510 weak and rough, the mask material 1510 may be provided with a plurality of small holes, for example, in a mesh shape. The surface of the mask material 1510 is formed of a material having resistance to a reactive gas.

  One side of the first surface 510 of the substrate 500 on the downstream side in the substrate transport direction is the first E1, one side upstream on the substrate transport direction is the second side E2, and two sides parallel to the substrate transport direction are the third side. Let E3 and the fourth side E4 (see FIG. 3). As shown in FIGS. 13A and 13B, when the downstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080, the mask material 1510 is not inserted into the gap 1081. As a result, the first edge portion 512 (see FIG. 3) along the first side E1 is exposed to the amount of reaction gas blown from the nozzle 1080 to be roughened.

  As shown in FIGS. 13C and 13D, when the intermediate region of the substrate 500 passes through the nozzle 1080, that is, the first edge 512 along the first side E1 (see FIG. 3). ) Passes through the nozzle 1080, and before the second edge 513 (see FIG. 3) along the second side E2 passes through the nozzle 1080, the mask material 1510 is inserted into the gap 1081. . The mask material 1510 is inserted by, for example, a robot arm operable in the horizontal direction. The mask material 1510 protects the central portion 511 (see FIG. 3) from the reaction gas. On the other hand, the third edge 514 and the fourth edge 515 (see FIG. 3) are not protected by the mask material 1510. For this reason, the third edge portion 514 and the fourth edge portion 515 are roughened by being exposed to the amount of reaction gas blown from the nozzle 1080. On the other hand, the central portion 511 is roughened by being exposed to a smaller amount of reaction gas than the amount blown out from the nozzle 1080.

  As shown in FIGS. 13E and 13F, when the upstream side of the substrate 500 in the substrate transport direction passes through the nozzle 1080, the mask material 1510 is not inserted into the gap 1081. As a result, the second edge 513 (see FIG. 3) along the second side E2 is roughened by being exposed to the amount of reaction gas blown from the nozzle 1080.

  As described above, in the substrate manufacturing system 1500, the amount of the reaction gas to which the central portion 511 of the first surface 510 of the substrate 500 is actually exposed is exposed to the first edge portion 512 to the fourth edge portion 515. Less than the amount of reaction gas. As a result, the roughness is reduced at the central portion 511 of the substrate 500, and the roughness is increased at the four edges 512 to 515 of the substrate 500.

Hereinafter, examples of the present invention will be described with reference to Table 1. Table 1 shows the result of measuring the in-plane distribution of the arithmetic average surface roughness Ra on the substrate roughened by using the substrate manufacturing system (see FIG. 5) according to the example of the present invention, using an atomic force microscope. Indicates. The conditions for creating the substrate are as follows. Etching tank size: 850 mm, substrate: non-alkali glass (product name: AN100, manufactured by Asahi Glass Co., Ltd.), substrate size: width 2880 mm × substrate transport direction length 3130 mm, substrate transport speed: 10 m / min, reaction gas composition: CF ₄ , N ₂ , water vapor, reactive gas discharge flow rate at nozzle part: 0.07 m / sec.

  There are a total of 9 measurement points, 3 rows in the substrate width direction and 3 columns in the substrate transport direction. The columns of measurement points are arranged in order along the width direction of the substrate at positions of 500 mm from the left end, the center, and 500 mm from the right end (hereinafter, “first column”, “second column”, “ 3rd column "). The rows of measurement points are arranged in the order of 500 mm from the front end, the center, and 500 mm from the rear end along the substrate transport direction (hereinafter referred to as “first row”, “second row”, “second”). 3 lines ").

  The measurement was performed by the following method. First, a sample having a width of 5 mm and a length of 5 mm including each measurement point was cut out from the roughened substrate. Next, the shape of the roughened surface of each sample was measured using an atomic force microscope (product name: SPI-3800N, manufactured by Seiko Instruments Inc.). The measurement was performed on a scan area of 5 μm × 5 μm using a dynamic force mode (cantilever: SI-DF40P2) at a scan rate of 1 Hz (number of data in the area: 256 × 256). Based on this observation, the average surface roughness Ra at each measurement point was calculated.

  In Table 1, the arithmetic average surface roughness Ra (unit: nm) at each measurement point is shown in a matrix format. Each column in Table 1 corresponds to the first column, the second column, and the third column of measurement points in order from the left. Each row in Table 1 corresponds to the first row, the second row, and the third row of measurement points in order from the top.

  As shown in Table 1, the arithmetic average surface roughness Ra in the second row and the second column was lower than other values. This suggests that the arithmetic average surface roughness at the center of the roughened surface is smaller than any of the arithmetic average surface roughness at the four edges along each of the four sides. As shown in this embodiment, according to the present invention, when the substrate is adsorbed on the stage, the adsorption force can be increased at the central portion of the substrate and the adsorption force can be decreased at the four edge portions of the substrate. As a result, the substrate can be easily peeled off regardless of where the substrate is peeled from the four edges of the substrate. It is also possible to start peeling the substrate simultaneously from the four edges. In this case, the peeling operation can be performed efficiently in a short time.

500 ... Substrate, 510 ... First surface, 520 ... Second surface, 511 ... Central portion, E1 ... First side, E2 ... Second side, E3 ... Third side, E4 ... Fourth side DESCRIPTION OF SYMBOLS 512 ... 1st edge part, 513 ... 2nd edge part, 514 ... 3rd edge part, 515 ... 4th edge part, 1000 ... Board | substrate manufacturing system, 1070 ... Conveyance apparatus, 1080 ... Nozzle, 1051 ... High pressure shower (first airflow generation device), FFU1 ... fan filter unit (second airflow generation device), FFU2 ... fan filter unit (third airflow generation device), 1030 ... etching tank, 1020 ... first buffer Tank 1040 second buffer tank 1330 rotating device 1510 mask material 200 stage 300 peeling device 400 peeling device 310a 310b adsorption member 320a 320b riff Pin

Claims (11)

A substrate having a first surface and a second surface opposite to the first surface,
The arithmetic average surface roughness of the central portion of the first surface is smaller than at least the arithmetic average surface roughness of one edge portion along one side of the first surface. The arithmetic average surface roughness of the central portion of the first surface is smaller than any of the arithmetic average surface roughness of four edges along each of the four sides of the first surface. substrate. The first surface is a surface that is in contact with the suction stage;
The substrate according to claim 1, wherein the second surface is a surface on which an electronic member is formed. A transfer device for transferring a substrate;
A nozzle for blowing the reaction gas onto the first surface of the substrate transported by the transport device to roughen the first surface;
An airflow control means for causing an airflow whose direction changes according to a relative position between the substrate and the nozzle to flow toward a gap between the nozzle and the substrate;
Including board manufacturing system. The airflow control means includes a first airflow generation device,
The first airflow generation device is provided on the downstream side of the nozzle in the substrate transport direction, and causes the first airflow to act on the first surface of the substrate on which a reactive gas is blown by the nozzle. The board manufacturing system described in 1. The airflow control means includes a second airflow generation device and a third airflow generation device,
The second airflow generation device is provided on the upstream side of the nozzle in the substrate transport direction, and is formed on a second surface opposite to the first surface of the substrate on which the reactive gas is blown by the nozzle. The second air current acts,
The third airflow generation device is provided downstream of the nozzle in the substrate conveyance direction and upstream of the first airflow generation device in the substrate conveyance direction, and generates a third airflow in the same direction as the second airflow. The substrate manufacturing system according to claim 5. The airflow control means includes a second airflow generation device and a third airflow generation device,
The second airflow generation device is provided on the upstream side of the nozzle in the substrate transport direction, and is formed on a second surface opposite to the first surface of the substrate on which the reactive gas is blown by the nozzle. The second air current acts,
The third air flow generation device is provided downstream of the nozzle in the substrate transfer direction, and generates a third air flow from one side of the transfer path to the other side of the substrate transfer path. The board manufacturing system described in 1. An etching tank in which the nozzle is provided;
A first buffer tank that is connected to the upstream side of the etching tank in the substrate transport direction and in which the second air stream is generated by the second air stream generator;
A second buffer tank that is connected to the substrate transport direction downstream side of the etching tank and in which the third air stream is generated by the third air stream generator;
Including
Each of the etching tank, the first buffer tank, and the second buffer tank includes a substrate carry-in port through which the substrate is carried in by the carrying device, and a substrate carry-out port through which the substrate is carried out by the carrying device. Including,
The substrate manufacturing system according to claim 6, wherein a length of the first buffer tank from the substrate carry-in port to the nozzle in a substrate transport direction is equal to or less than a length of the substrate in the substrate transport direction. Including peeling means for peeling the plate-like body adsorbed on the stage from the stage,
In the plate-like body, the arithmetic average surface roughness of the central portion of the first surface adsorbed on the stage is at least larger than the arithmetic average surface roughness of one edge along one side of the first surface. small,
The peeling device starts to peel the plate-like body from an overlapping portion where the stage and the one edge overlap. A substrate manufacturing method using the substrate manufacturing system according to any one of claims 4 to 8, wherein the first surface of the substrate is roughened.
A transport step of transporting the substrate by the transport device;
A roughening step of roughening the first surface by spraying reactive gas from the nozzle onto the first surface of the substrate transported by the transport device;
An air flow control step for causing an air flow whose direction changes according to a relative position between the substrate and the nozzle to flow toward a gap between the nozzle and the substrate;
A substrate manufacturing method comprising: Including a peeling step of peeling the plate-like body adsorbed on the stage from the stage;
In the plate-like body, the arithmetic average surface roughness of the central portion of the first surface adsorbed on the stage is at least larger than the arithmetic average surface roughness of one edge along one side of the first surface. small,
In the peeling step, the peeling method starts to peel the plate-like body from an overlapping portion where the stage and the one edge overlap.

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