JP2015198252A - Ledアセンブリー及びこのledアセンブリーを用いたled電球 - Google Patents
Ledアセンブリー及びこのledアセンブリーを用いたled電球 Download PDFInfo
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- JP2015198252A JP2015198252A JP2015061851A JP2015061851A JP2015198252A JP 2015198252 A JP2015198252 A JP 2015198252A JP 2015061851 A JP2015061851 A JP 2015061851A JP 2015061851 A JP2015061851 A JP 2015061851A JP 2015198252 A JP2015198252 A JP 2015198252A
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- emitting diode
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- 239000000843 powder Substances 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
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- 239000000047 product Substances 0.000 description 3
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
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- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
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- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- FNCIDSNKNZQJTJ-UHFFFAOYSA-N alumane;terbium Chemical compound [AlH3].[Tb] FNCIDSNKNZQJTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
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- 229910052791 calcium Inorganic materials 0.000 description 1
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- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
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- 229920003002 synthetic resin Polymers 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
Description
102 表面
104 中間領域
106 周囲領域
108 表面
112 導電構造
114 導電構造
120a 電気接点/第1電気接点
120b 電気接点/第2電気接点
120c 電気接点/第3電気接点
120d 電気接点/第4電気接点
130 第1波長変換層
140 LED素子
142 ボンディングワイヤ
150 第2波長変換層
150’ 部分的第2波長変換層
160、160a 放熱素子
162 上面
164 接点
170 導通孔
180 電線
190 位置合わせ標識
200 発光ダイオードアセンブリー
210 台座
220 回路板
230 電球グローブ
240 台座接続部
300 発光ダイオード電球
S 収納空間
Claims (10)
- 発光ダイオードアセンブリーであって、
表面を含むとともに、中間領域及びこの中間領域を囲む周囲領域を有する透明基板と、
少なくとも一部が前記透明基板の前記中間領域に対応する放熱素子と、
前記透明基板の前記表面に設置され、且つ前記透明基板の前記周囲領域に対応する第1波長変換層と、
前記第1波長変換層に設置された複数の発光ダイオード素子と、
前記透明基板の前記表面に設置され、且つ前記発光ダイオード素子及び前記第1波長変換層を被覆する第2波長変換層と、
前記複数の発光ダイオード素子を囲むとともに前記複数の発光ダイオード素子に電気的に接続され、且つ互いに分離して前記表面に形成された複数の導電構造と、
前記複数の導電構造にそれぞれ接続される複数の電気接点と、を含む発光ダイオードアセンブリー。 - 前記第1波長変換層及び前記第2波長変換層に蛍光粉が含まれる、請求項1に記載の発光ダイオードアセンブリー。
- 前記透明基板は前記中間領域に位置する導通孔を含み、前記複数の発光ダイオード素子は前記導通孔を囲む、請求項1に記載の発光ダイオードアセンブリー。
- 前記複数の発光ダイオード素子の配列方式は矩形の四辺上、円形の円周上または千鳥状の配列を含む、請求項3に記載の発光ダイオードアセンブリー。
- 前記複数の電気接点は、それぞれ、前記導通孔と前記発光ダイオード素子との間に位置する第1電気接点及び第2電気接点を含む、請求項3に記載の発光ダイオードアセンブリー。
- 前記発光ダイオードアセンブリーは、さらに、それぞれ、前記第2波長変換層の周囲に位置する第3電気接点及び第4電気接点を含む、請求項5に記載の発光ダイオードアセンブリー。
- 前記放熱素子は中空の柱体であり、一対の電線が前記中空の柱体及び前記導通孔を通過して、それぞれ、前記透明基板の前記第1電気接点及び前記第2電気接点に電気的に接続される、請求項3に記載の発光ダイオードアセンブリー。
- 前記放熱素子は前記透明基板に貼り付けられた伝熱板である、請求項1に記載の発光ダイオードアセンブリー。
- 前記放熱素子から前記透明基板の縁に向う方向において、前記複数の発光ダイオード素子の配列間隔が狭いから広くなる、請求項1に記載の発光ダイオードアセンブリー。
- 発光ダイオード電球であって、
台座と、
前記台座に接続され、且つ収納空間を決める電球グローブと、
前記収納空間内に設置され、且つ前記台座に電気的に接続される請求項1から9のいずれか一項に記載の発光ダイオードアセンブリーと、を含む発光ダイオード電球。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103112161 | 2014-04-01 | ||
TW103112161A TWI613391B (zh) | 2014-04-01 | 2014-04-01 | 發光二極體組件及應用此發光二極體組件的發光二極體燈泡 |
Publications (2)
Publication Number | Publication Date |
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JP2015198252A true JP2015198252A (ja) | 2015-11-09 |
JP6616088B2 JP6616088B2 (ja) | 2019-12-04 |
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JP2015061851A Active JP6616088B2 (ja) | 2014-04-01 | 2015-03-25 | Ledアセンブリー及びこのledアセンブリーを用いたled電球 |
Country Status (4)
Country | Link |
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US (1) | US9874318B2 (ja) |
JP (1) | JP6616088B2 (ja) |
CN (1) | CN104976547B (ja) |
TW (1) | TWI613391B (ja) |
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WO2020137764A1 (ja) * | 2018-12-27 | 2020-07-02 | デンカ株式会社 | 蛍光体基板、発光基板及び照明装置 |
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KR101701143B1 (ko) * | 2014-08-27 | 2017-02-13 | 김종희 | 엘이디 가로등 |
CN105990492A (zh) * | 2015-02-12 | 2016-10-05 | 展晶科技(深圳)有限公司 | 发光二极管封装体及其制造方法 |
CN106895270B (zh) * | 2015-12-18 | 2020-03-17 | 晶宇光电(厦门)有限公司 | 光源模块及包含此光源模块的灯具 |
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CN113823574B (zh) * | 2021-11-23 | 2022-03-25 | 山东汉芯科技有限公司 | 一种功率型芯片封装方法 |
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CN104976547A (zh) | 2015-10-14 |
US9874318B2 (en) | 2018-01-23 |
TW201538887A (zh) | 2015-10-16 |
JP6616088B2 (ja) | 2019-12-04 |
CN104976547B (zh) | 2019-05-28 |
US20150276152A1 (en) | 2015-10-01 |
TWI613391B (zh) | 2018-02-01 |
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