JP2015198111A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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Abstract
【解決手段】真空雰囲気とされた縦型の反応容器1内へ原料ガスノズル52を介して原料ガスを供給すると共に、電極441、442に電力を供給して処理ガスである反応ガスを活性化して、ウエハボート3に棚状に保持されたウエハWに対して処理を行っている。前記原料ガスノズル52は、前記反応容器1を平面的に見たときに、前記反応容器1の中心部から見て前記電極441、442の左方向または右方向に夫々40度以上離れた領域に配置される。前記領域は前記電極441、442に供給された電力に基づく電界強度が8.12×102V/mよりも小さい領域であるので、前記原料ガスノズル52を介して発生する異常放電の生成が抑えられ、この異常放電が要因となるパーティクルの発生が抑制される。
【選択図】図4
Description
前記処理ガスに電力を供給して処理ガスを活性化するために、基板保持具の長さ方向に伸びるように設けられた電極と、
前記基板が配列されている高さ領域にて基板保持具の長さ方向に伸びるように反応容器内に設けられた構造物と、
前記反応容器内を真空排気するための排気口と、を備え、
前記構造物は、前記反応容器を平面的に見たときに、前記反応容器の中心部から見て前記電極における当該構造物に最も近い部位の左方向または右方向に夫々40度以上離れた領域に配置されていることを特徴とする。
前記ボートエレベータ22は図示しない昇降機構により昇降自在に構成され、前記回転軸24は駆動部をなすモータMにより鉛直軸周りに回転自在に構成されている。図中25は断熱ユニットである。こうしてウエハボート3は、当該ウエハボート3が反応容器1内にロード(搬入)され、蓋体23により反応容器1の基板搬入出口21が塞がれる処理位置と、反応容器1の下方側の搬出位置との間で昇降自在に構成される。
ここで電界強度分布を見てみると、電極441に近い程電界強度が大きく、電極441から離れるにつれて電界強度が小さくなっている。従って、電極441から遠い位置P1の電界強度は、電極441から近い位置P2の電界強度よりも小さい。具体的には前記位置P1の電界強度は、第1の電極441に+500Vの電圧を印加したときには6.37×102V/mより大きく、8.12×102V/mより小さい。また第1の電極441に−500Vの電圧を印加したときには5.00×102V/mより大きく、6.37×102V/mより小さい。
前記位置P2の電界強度は、第1の電極441に+500Vの電圧を印加したときには1.89×103V/mより大きく、3.48×103V/mより小さい。また第1の電極441に−500Vの電圧を印加したときには8.12×102V/mより大きく、1.89×103V/mより小さい。
VB=f(P×d)・・・(1)
図8中横軸は(p×d)、縦軸は放電が生じる電圧VBであり、窒素ガスのデータを示している。
以上のことから、反応容器1内の圧力が133Pa(1Torr)以下より好ましくは、6.65Pa(0.05Torr)以上66.5Pa(0.5Torr)以下であってウエハWの直径が300mmのときの構造物の好ましい配置領域を示す。熱電対72は前記第1の領域Sに配置し、原料ガスノズル52は、ウエハ中心部C1から見て第1の電極441の中心部C2と原料ガスノズル52の中心部C6とのなす角θ2(図5参照)が40度以上110度以下の領域に配置することがより好ましい。
また熱電対71を備えた石英管72は、例えば最も近い第2の電極442から例えば140度(石英管72の中心部C7とウエハ中心部C1とを結ぶ直線L7と直線L3とのなす角が140度)の位置に配置されている。熱電対71は石英管72に設けられていることから、石英管72を第1の領域S1に配置すれば、熱電対71も第1の領域S1に設けられることになる。
次いでバルブV1、V2を閉じ、バルブV3、V4を開いて、ジクロロシランガスの供給を停止する一方、反応容器1内に原料ガスノズル52及び反応ガスノズル62から置換ガスである窒素ガスを所定時間供給し、反応容器1内のジクロロシランガスを窒素ガスにより置換する。続いて高周波電源16に例えば100Wの電力を供給すると共に、バルブV1を閉じ、バルブV2、V3、V4を開いて、反応容器1内に反応ガスノズル62を介して反応ガスであるアンモニアガスと窒素ガスとを供給する。
高周波電源16に印加される電力を小さくすることによってもパーティクルの発生を抑制できるが、電力を低減すると、膜質やローディング効果といった成膜性能が低下するため得策ではない。また本発明は構造物を適切な領域S1、S2に配置するという簡易な手法でパーティクルを低減しているので、装置構成を大幅に変更する必要がなく、有効である。
また上述のように、原料ガスノズル52を排気口20との関係で設定した第2の領域S2に設けると、既述のように気流の乱れが抑えて、膜厚及び膜質の面内均一性が高く、成膜性能が良好な成膜処理を行うことができる。
さらに本発明の構造物は、反応容器1内におけるウエハボート3の側方に、ウエハWが配列されている高さ領域にてウエハボート3の長さ方向に伸びるように反応容器内に設けられたものであればよく、原料ガスノズル52や熱電対71を支持する石英管72には限られない。また構造物は導電体であってもよいし、絶縁体であってもよい。
さらに本発明の基板処理装置では、例えば原料ガスとして塩化チタン(TiCl4)ガス、反応ガスとしてアンモニアガスを用いて、窒化チタン(TiN)膜を成膜するようにしてもよい。また、原料ガスとしては、TMA(トリメチルアルミニウム)を用いてもよい。
またウエハWの表面に吸着した原料ガスを反応させて、所望の膜を得る反応は、例えばO2、O3、H2O等を利用した酸化反応、H2、HCOOH、CH3COOH等の有機酸、CH3OH、C2H5OH等のアルコール類等を利用した還元反応、CH4、C2H6、C2H4、C2H2等を利用した炭化反応、NH3、NH2NH2、N2等を利用した窒化反応等の各種反応を利用してもよい。
上述の基板処理装置を用いて、直径300mmのウエハWに対して、上述のSiN膜の成膜処理を複数のバッチ処理に亘って行い、そのときのパーティクルの個数と大きさとを測定した。このとき反応容器1内の圧力は35.91Pa(0.27Torr)とし、原料ガスノズル52は、電極441との最も近い部位の直線距離が17mmの位置(図5に示す直線L1と直線L6とのなす角θ2が50度の位置)に配置した。この結果を図9に示す。横軸は処理のバッチ数、左縦軸はパーティクル数、右縦軸は累積膜厚を夫々示している。パーティクル数については、ウエハボート3の特定のスロットについて棒グラフにて示し、1μm未満サイズのパーティクルについては白で、1μm以上サイズのパーティクルについては斜線で夫々示している。またダミーウエハDW上の累積膜厚については□でプロットしている。
さらに反応容器1内の圧力は35.91Pa(0.27Torr)とし、原料ガスノズル52は、電極441との最も近い部位の直線距離が7mmの位置(図5に示す直線L1と直線L6とのなす角θ2が25度の位置)に配置した基板処理装置についても同様の実験を行い、結果を図10に示した。
DW ダミーウエハ
1 反応容器
20 排気口
3 ウエハボート
31 真空ポンプ
51 原料ガス供給路
42 原料ガスノズル
62 反応ガスノズル
100 制御部
Claims (10)
- 真空雰囲気とされた縦型の反応容器内にて、基板保持具に棚状に保持された直径が300mm以上の複数の半導体ウエハである基板に対し、処理ガスを供給して処理を行う基板処理装置において、
前記処理ガスに電力を供給して処理ガスを活性化するために、基板保持具の長さ方向に伸びるように設けられた電極と、
前記基板が配列されている高さ領域にて基板保持具の長さ方向に伸びるように反応容器内に設けられた構造物と、
前記反応容器内を真空排気するための排気口と、を備え、
前記構造物は、前記反応容器を平面的に見たときに、前記反応容器の中心部から見て前記電極における当該構造物に最も近い部位の左方向または右方向に夫々40度以上離れた領域に配置されていることを特徴とする基板処理装置。 - 前記構造物は、前記電極に供給された電力に基づく電界強度が8.12×102V/mより小さい領域に配置されることを特徴とする請求項1記載の基板処理装置。
- 真空雰囲気とされた縦型の反応容器内にて、基板保持具に棚状に保持された複数の基板に対し、処理ガスを供給して処理を行う基板処理装置において、
前記処理ガスに電力を供給して処理ガスを活性化するために、基板保持具の長さ方向に伸びるように設けられた電極と、
前記基板が配列されている高さ領域にて基板保持具の長さ方向に伸びるように反応容器内に設けられた構造物と、
前記反応容器内を真空排気するための排気口と、を備え、
前記構造物は、前記電極に供給された電力に基づく電界強度が8.12×102V/mより小さい領域に配置されることを特徴とする基板処理装置。 - 前記反応容器内の圧力は、6.65Pa(0.05Torr)以上66.5Pa(0.5Torr)以下であることを特徴とする請求項1ないし3のいずれか一項に記載の基板処理装置。
- 前記電極に印加される電力は、30W以上200W以下であることを特徴とする請求項1ないし4のいずれか一項に記載の基板処理装置。
- 前記電極は、容量結合プラズマを生成するためのものであることを特徴とする請求項1ないし5のいずれか一項に記載の基板処理装置。
- 前記反応容器内に基板の配列方向に伸びるように設けられると共にその長さ方向に沿ってガス吐出孔が形成され、基板に原料ガスを供給して吸着させるための原料ガスノズルと、
前記反応容器内に基板の配列方向に伸びると共にその長さ方向に沿ってガス吐出孔が形成され、前記原料ガスと反応する反応ガスを前記原料ガスの供給と交互に供給して反応生成物を基板上に積層するための反応ガスノズルと、を備え、
前記反応ガスは処理ガスに相当し、
前記原料ガスノズルは前記構造物に相当することを特徴とする請求項1ないし6のいずれか一項に記載の基板処理装置。 - 前記反応容器の側壁の一部を基板保持具の長さ方向に沿って外側に膨らませて膨らんだ壁部で囲まれる空間をプラズマ生成室とし、
前記電極はプラズマ生成室を挟んで互いに対向する一対の電極であることを特徴とする請求項7記載の基板処理装置。 - 前記構造物は、前記反応容器内の温度を検出するための温度検出部であることを特徴とする請求項1ないし8のいずれか一項に記載の基板処理装置。
- 前記排気口は、当該反応容器内を側方から真空排気するように設けられ、
前記反応容器を平面的に見たときに、前記排気口の左右方向の中心部から前記反応容器の中心部を見て90度以上160度以下の開き角となる位置に、前記原料ガスノズルが設けられることを特徴とする請求項7記載の基板処理装置。
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