JP2015177191A - Cmosイメージセンサ - Google Patents
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- JP2015177191A JP2015177191A JP2015049024A JP2015049024A JP2015177191A JP 2015177191 A JP2015177191 A JP 2015177191A JP 2015049024 A JP2015049024 A JP 2015049024A JP 2015049024 A JP2015049024 A JP 2015049024A JP 2015177191 A JP2015177191 A JP 2015177191A
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- 239000007943 implant Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
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- H01L27/144—Devices controlled by radiation
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Abstract
【解決手段】CMOSイメージセンサ101は、逆バイアスされるように構成された第1の導電型の活性層11と、ピクセル20と、を備え、該ピクセルが、第2の導電型のウェル22を含む感光性素子と、感光性素子を読み込み且つ再設定するための能動CMOS素子を含有する第1の導電型のウェル21と、を含む。CMOSイメージセンサは更に、第1の導電型のウェルの真下の活性層における第2の導電型のドープ埋込層111を含む。埋込層は、第1の導電型のウェルの下の第2の導電型のウェルの下に空乏領域を延ばすように構成される。
【選択図】図12
Description
12 p+基板又は裏面コンタクト
20 ピクセル
21 pウェル
22 n+ウェル
23 ガードリングn+ウェル
24 基板バイアスp+ウェル
101 CMOS裏面照明イメージセンサ
111 浮遊埋込低ドープn−層
Claims (12)
- CMOSイメージセンサであって、
逆バイアスされるように構成された第1の導電型の活性層と、ピクセルと、を備え、
前記ピクセルが、
第2の導電型のウェルを含む感光性素子と、
前記感光性素子を読み込み且つ再設定するための能動CMOS素子を含有する第1の導電型のウェルと、
を含み、前記CMOSイメージセンサが更に、
前記第1の導電型のウェルの下の前記第2の導電型のウェル下に空乏領域を延ばして前記活性層に拡張した空乏領域を形成するよう構成された、前記第1の導電型のウェルの真下の前記活性層における前記第2の導電型のドープ埋込層と、
を備え、
前記活性層内の前記拡張した空乏領域が、能動CMOS素子を含有する第1の導電型のウェルと基板又は裏面コンタクトとの間の寄生電流経路をピンチオフするよう構成される、CMOSイメージセンサ。 - 前記ドープ埋込層が、実質的に1015cm-3にてドープされ、前記活性層が、1013cm-3のドーピングレベルを有する、請求項1に記載のCMOSイメージセンサ。
- 前記ドープ埋込層が電気的に浮遊状態にある、請求項1に記載のCMOSイメージセンサ。
- 前記第2の導電型のドープ埋込層の幅が、前記第1の導電型のウェルの幅に実質的に等しい、請求項1に記載のCMOSイメージセンサ。
- 前記第2の導電型のドープ埋込層の幅が、前記第1の導電型のウェルの幅よりも大きい、請求項1に記載のCMOSイメージセンサ。
- 請求項1に記載の複数のピクセルと、該複数のピクセルを少なくとも実質的に囲む第2の導電型のウェルを含むガードリングとを備えたCMOSイメージセンサ。
- 前記ピクセルが、前記基板の前面上にあり、前記CMOSイメージセンサが、前記前面の反対側の裏面上を照明するように構成される、請求項1に記載のCMOSイメージセンサ。
- 前記CMOSイメージセンサに逆バイアスを加えるように構成された裏面上のコンタクトを更に備える、請求項7に記載のCMOSイメージセンサ。
- 前記CMOSイメージセンサに逆バイアスを加えるように構成された前面上のコンタクトを更に備える、請求項7に記載のCMOSイメージセンサ。
- 前記感光性素子が、フォトダイオード、埋込フォトダイオード、ピンフォトダイオード、又はフォトゲートのうちの1つを含む、請求項1に記載のCMOSイメージセンサ。
- CMOSイメージセンサを備えた装置であって、
前記CMOSイメージセンサが、
逆バイアスされるように構成された第1の導電型の活性層と、ピクセルと、を備え、
前記ピクセルが、
第2の導電型のウェルを含む感光性素子と、
前記感光性素子を読み込み且つ再設定するための能動CMOS素子を含有する第1の導電型のウェルと、
を含み、前記CMOSイメージセンサが更に、
前記第1の導電型のウェルの下の前記第2の導電型のウェル下に空乏領域を延ばして前記活性層に拡張した空乏領域を形成するよう構成された、前記第1の導電型のウェルの真下の前記活性層における前記第2の導電型のドープ埋込層と、
を備え、
前記活性層内の前記拡張した空乏領域が、能動CMOS素子を含有する第1の導電型のウェルと基板又は裏面コンタクトとの間の寄生電流経路をピンチオフするよう構成される、装置。 - CMOSイメージセンサを備えた暗視装置であって、
前記CMOSイメージセンサが、
逆バイアスされるように構成された第1の導電型の活性層と、ピクセルと、を備え、
前記ピクセルが、
第2の導電型のウェルを含む感光性素子と、
前記感光性素子を読み込み且つ再設定するための能動CMOS素子を含有する第1の導電型のウェルと、
を含み、前記CMOSイメージセンサが更に、
前記第1の導電型のウェルの下の前記第2の導電型のウェル下に空乏領域を延ばして前記活性層に拡張した空乏領域を形成するよう構成された、前記第1の導電型のウェルの真下の前記活性層における前記第2の導電型のドープ埋込層と、
を備え、
前記活性層内の前記拡張した空乏領域が、能動CMOS素子を含有する第1の導電型のウェルと基板又は裏面コンタクトとの間の寄生電流経路をピンチオフするよう構成される、暗視装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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GB1404363.2 | 2014-03-12 | ||
GB1404363.2A GB2524044B (en) | 2014-03-12 | 2014-03-12 | CMOS Image sensor |
Publications (2)
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JP2015177191A true JP2015177191A (ja) | 2015-10-05 |
JP6770296B2 JP6770296B2 (ja) | 2020-10-14 |
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JP2015049024A Active JP6770296B2 (ja) | 2014-03-12 | 2015-03-12 | Cmosイメージセンサ |
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US (1) | US10325955B2 (ja) |
EP (1) | EP2919270B8 (ja) |
JP (1) | JP6770296B2 (ja) |
ES (1) | ES2792983T3 (ja) |
GB (1) | GB2524044B (ja) |
IL (1) | IL237720B (ja) |
PL (1) | PL2919270T3 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019112046A1 (ja) | 2017-12-08 | 2019-06-13 | 国立大学法人静岡大学 | 光電変換素子及び固体撮像装置 |
JP2019201163A (ja) * | 2018-05-18 | 2019-11-21 | マッハコーポレーション株式会社 | 固体撮像素子及びその形成方法 |
JP2021500753A (ja) * | 2017-10-27 | 2021-01-07 | エッレファウンドリ エッセ.エッレ.エッレ. | 電離放射線及び電離粒子の集積センサ |
Families Citing this family (6)
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US9602750B2 (en) * | 2014-11-25 | 2017-03-21 | Semiconductor Components Industries, Llc | Image sensor pixels having built-in variable gain feedback amplifier circuitry |
CN110970453A (zh) * | 2018-10-01 | 2020-04-07 | 松下知识产权经营株式会社 | 摄像装置 |
JP2020088293A (ja) * | 2018-11-29 | 2020-06-04 | キヤノン株式会社 | 光電変換装置、光電変換システム、移動体 |
JP2020088291A (ja) * | 2018-11-29 | 2020-06-04 | キヤノン株式会社 | 光電変換装置、光電変換システム、移動体 |
EP3931854A1 (en) * | 2019-02-26 | 2022-01-05 | ASML Netherlands B.V. | Charged particle detector with gain element |
US11152410B2 (en) | 2019-12-19 | 2021-10-19 | Globalfoundries Singapore Pte. Ltd. | Image sensor with reduced capacitance transfer gate |
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Also Published As
Publication number | Publication date |
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PL2919270T3 (pl) | 2020-10-19 |
EP2919270B8 (en) | 2020-05-06 |
US20150263058A1 (en) | 2015-09-17 |
IL237720B (en) | 2020-07-30 |
JP6770296B2 (ja) | 2020-10-14 |
GB201404363D0 (en) | 2014-04-23 |
GB2524044B (en) | 2019-03-27 |
ES2792983T3 (es) | 2020-11-12 |
US10325955B2 (en) | 2019-06-18 |
GB2524044A (en) | 2015-09-16 |
EP2919270B1 (en) | 2020-03-25 |
EP2919270A1 (en) | 2015-09-16 |
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