JP7370323B2 - 電離放射線及び電離粒子の集積センサ - Google Patents
電離放射線及び電離粒子の集積センサ Download PDFInfo
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- JP7370323B2 JP7370323B2 JP2020523423A JP2020523423A JP7370323B2 JP 7370323 B2 JP7370323 B2 JP 7370323B2 JP 2020523423 A JP2020523423 A JP 2020523423A JP 2020523423 A JP2020523423 A JP 2020523423A JP 7370323 B2 JP7370323 B2 JP 7370323B2
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- 239000002245 particle Substances 0.000 title claims description 23
- 230000005865 ionizing radiation Effects 0.000 title claims description 21
- 238000009825 accumulation Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 59
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000969 carrier Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000005421 electrostatic potential Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000779 depleting effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/117—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the bulk effect radiation detector type, e.g. Ge-Li compensated PIN gamma-ray detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
Description
Claims (8)
- 電離放射線及び/又は粒子の半導体センサであって、
第1のドーピングを有する半導体材料の基板(1)と、
前記第1のドーピングの型と反対の型の第2のドーピングを有する、前記基板(1)の裏面上に形成されたバイアス層(2)と、
前記基板(1)に接触した前記バイアス層(2)の表面に対向する前記バイアス層(2)の自由表面上に形成された裏面バイアス電極(7)と、
前記第1のドーピング濃度よりも大きく、前記第1のドーピングと同じ型の第3のドーピングを有する、前記基板(1)の前面上に形成された中間層(3)と、
前記中間層(3)の間隔部分によって互いに分離された、前記中間層(3)中に深さ方向に形成された第1のドープ埋め込み領域(4)であって、前記第1のドーピングの型と反対の型の第4のドーピングを有する、第1のドープ埋め込み領域(4)と、
前記中間層(3)の前記間隔部分の前面中に形成されたキャリア収集領域(6)であって、前記第1のドープ埋め込み領域(4)から離れており、前記第3のドーピング濃度よりも大きく、前記第3のドーピングと同じ型の第5のドーピングを有し、前記中間層(3)中に深さ方向に最大で前記第1のドープ埋め込み領域(4)まで延ばされる、キャリア収集領域(6)と、
前記キャリア収集領域(6)のそれぞれの領域の前面上に各々形成された収集電極と、
前記中間層(3)の前面まで前記第1のドープ埋め込み領域(4)上に形成された第1のドープ表面領域(5p、5n)と、
電離放射線及び/又は粒子によって前記基板(1)中に生成され、前記キャリア収集領域(6)によって収集されたキャリアを検出するために前記収集電極に機能的に接続された電気端子を有する、前記第1のドープ表面領域(5p、5n)の前面中に画成された読出し電子回路と
を備える、半導体センサ。 - 前記キャリア収集領域(6)が、前記中間層(3)中に深さ方向に前記第1のドープ埋め込み領域(4)よりも小さく延ばされる、請求項1に記載の半導体センサ。
- 前記基板(1)が、50μmから500μmの間に含まれる厚さを有し、
前記第1のドーピングが、1011cm-3から1013cm-3の間に含まれ、前記第3のドーピングが、5・1013cm-3から1016cm-3の間に含まれる、請求項2に記載の半導体センサ。 - 前記読出し電子回路が、単独可読画素の配列の行及び列に構成される、請求項1から3までのいずれか一項に記載の半導体センサ。
- 前記中間層(3)の前面中に形成された前面ドープ・ガード・リング(10)と、
前記前面ドープ・ガード・リング(10)の外側に前記中間層(3)中に深さ方向に形成された第2のドープ埋め込み領域(8)と、
前記中間層(3)の前面まで前記第2のドープ埋め込み領域(8)上に形成された第2のドープ表面領域(9p、9n)と、
前記単独可読画素の配列の電気的端子に機能的に接続された、前記第2のドープ表面領域(9p、9n)の前面中に画成された周辺電子回路と
を備える、請求項4に記載の半導体センサ。 - 前記基板(1)の裏面中に形成された裏面ドープ・ガード・リング(11)
を備える、請求項5に記載の半導体センサ。 - 第2のドーピングが、5・1017cm-3から1020cm-3の間に含まれる、請求項1から6までのいずれか一項に記載の半導体センサ。
- 前記中間層(3)が、前記基板(1)上に成長させたドープされたエピタキシャル層又は前記基板(1)上に画成されたドープされたウェルのいずれかである、請求項1から7までのいずれか一項に記載の半導体センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000122669A IT201700122669A1 (it) | 2017-10-27 | 2017-10-27 | Sensore integrato di radiazione ionizzante e di particelle ionizzanti |
IT102017000122669 | 2017-10-27 | ||
PCT/IB2018/058186 WO2019082045A1 (en) | 2017-10-27 | 2018-10-22 | INTEGRATED SENSOR OF IONIZING RADIATION AND IONIZING PARTICLES |
Publications (2)
Publication Number | Publication Date |
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JP2021500753A JP2021500753A (ja) | 2021-01-07 |
JP7370323B2 true JP7370323B2 (ja) | 2023-10-27 |
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JP2020523423A Active JP7370323B2 (ja) | 2017-10-27 | 2018-10-22 | 電離放射線及び電離粒子の集積センサ |
Country Status (6)
Country | Link |
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US (1) | US11081614B2 (ja) |
EP (1) | EP3701571B1 (ja) |
JP (1) | JP7370323B2 (ja) |
CN (1) | CN111279493B (ja) |
IT (1) | IT201700122669A1 (ja) |
WO (1) | WO2019082045A1 (ja) |
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US11389125B1 (en) * | 2021-02-05 | 2022-07-19 | GE Precision Healthcare LLC | System and method for mitigating trace triggering of channels in x-ray detector |
CN114899267A (zh) * | 2021-04-30 | 2022-08-12 | 深圳阜时科技有限公司 | 光电转换器件、感测装置、电子设备及制造方法 |
Citations (9)
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JP2010056345A (ja) | 2008-08-28 | 2010-03-11 | Brookman Technology Inc | 増幅型固体撮像装置 |
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WO2013129559A1 (ja) | 2012-02-29 | 2013-09-06 | Etoh Takeharu | 固体撮像装置 |
JP2015118989A (ja) | 2013-12-17 | 2015-06-25 | トヨタ自動車株式会社 | 半導体装置 |
JP2015177191A (ja) | 2014-03-12 | 2015-10-05 | イー2ヴイ テクノロジーズ (ユーケイ) リミテッド | Cmosイメージセンサ |
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US20160260861A1 (en) | 2015-03-06 | 2016-09-08 | Stmicroelectronics S.R.L. | Multiband double junction photodiode and related manufacturing process |
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IT1290553B1 (it) * | 1997-02-27 | 1998-12-10 | Ist Nazionale Fisica Nucleare | Rivelatore dell'energia e della posizione di incidenza di radiazioni elettromagnetiche o di particelle ionizzanti a deriva controllata |
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-
2017
- 2017-10-27 IT IT102017000122669A patent/IT201700122669A1/it unknown
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2018
- 2018-10-22 WO PCT/IB2018/058186 patent/WO2019082045A1/en unknown
- 2018-10-22 JP JP2020523423A patent/JP7370323B2/ja active Active
- 2018-10-22 US US16/758,088 patent/US11081614B2/en active Active
- 2018-10-22 CN CN201880070239.2A patent/CN111279493B/zh active Active
- 2018-10-22 EP EP18797153.6A patent/EP3701571B1/en active Active
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JP2007527500A (ja) | 2003-05-08 | 2007-09-27 | カウンシル フォー ザ セントラル ラボラトリー オブ ザ リサーチ カウンシルズ | 加速粒子および高エネルギ放射線センサ |
JP2010056345A (ja) | 2008-08-28 | 2010-03-11 | Brookman Technology Inc | 増幅型固体撮像装置 |
US20130037899A1 (en) | 2011-07-22 | 2013-02-14 | Espros Photonics Ag | Semiconductor structure for photon detection |
WO2013129559A1 (ja) | 2012-02-29 | 2013-09-06 | Etoh Takeharu | 固体撮像装置 |
JP2015118989A (ja) | 2013-12-17 | 2015-06-25 | トヨタ自動車株式会社 | 半導体装置 |
JP2015177191A (ja) | 2014-03-12 | 2015-10-05 | イー2ヴイ テクノロジーズ (ユーケイ) リミテッド | Cmosイメージセンサ |
JP2016009691A (ja) | 2014-06-20 | 2016-01-18 | 国立大学法人静岡大学 | 電磁波検出素子及び固体撮像装置 |
US20160260861A1 (en) | 2015-03-06 | 2016-09-08 | Stmicroelectronics S.R.L. | Multiband double junction photodiode and related manufacturing process |
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Also Published As
Publication number | Publication date |
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CN111279493B (zh) | 2023-07-07 |
CN111279493A (zh) | 2020-06-12 |
IT201700122669A1 (it) | 2019-04-27 |
US20200328321A1 (en) | 2020-10-15 |
EP3701571A1 (en) | 2020-09-02 |
EP3701571B1 (en) | 2021-11-24 |
JP2021500753A (ja) | 2021-01-07 |
WO2019082045A1 (en) | 2019-05-02 |
US11081614B2 (en) | 2021-08-03 |
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