JP2015172109A - 異方性導電接着剤、接続体の製造方法及び電子部品の接続方法 - Google Patents
異方性導電接着剤、接続体の製造方法及び電子部品の接続方法 Download PDFInfo
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- JP2015172109A JP2015172109A JP2014047585A JP2014047585A JP2015172109A JP 2015172109 A JP2015172109 A JP 2015172109A JP 2014047585 A JP2014047585 A JP 2014047585A JP 2014047585 A JP2014047585 A JP 2014047585A JP 2015172109 A JP2015172109 A JP 2015172109A
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- conductive adhesive
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
【解決手段】剥離基材に支持されたバインダー樹脂層を有し、バインダー樹脂層は、光重合性化合物と、光重合開始剤と、光吸収剤と、導電性粒子を含有し、光吸収剤の光吸収ピーク波長は光重合開始剤の光吸収ピーク波長よりも大きく、かつ、20nm以上離れている。
【選択図】図3
Description
本発明では、光硬化系の異方性導電フィルム(ACF:Anisotropic Conductive Film)1が用いられる。異方性導電フィルム1は、光カチオン系、又は光ラジカル系のいずれであってもよく、目的に応じて適宜選択することができる。
光カチオン系の異方性導電フィルム1は、バインダー樹脂層3中に、膜形成樹脂、光カチオン重合開始剤、光カチオン重合性化合物、及び光吸収剤を含有する。
光ラジカル系の異方性導電フィルム1は、バインダー樹脂層3中に、膜形成樹脂、光ラジカル重合開始剤、光ラジカル重合性化合物、及び光吸収剤を含有する。
本発明に係る光硬化系の異方性導電フィルム1は、光吸収剤の光吸収ピーク波長が光重合開始剤の光吸収ピーク波長よりも大きく、かつ、20nm以上離れている。異方性導電フィルム1は、後述する紫外線照射器35より紫外光が照射されると、光重合開始剤は紫外光を吸収して酸やラジカルを発生させる。また、光吸収剤も同様に紫外光を吸収し、発熱する。
次いで、異方性導電フィルム1を介して液晶駆動用IC18が透明基板12に接続された接続体の製造工程に用いる接続装置30ついて説明する。
次いで、上述した接続装置30を用いた液晶駆動用IC18の接続工程について説明する。先ず、透明基板12を仮貼り用のステージ上に載置し、異方性導電フィルム1を透明電極17上に仮圧着する。異方性導電フィルム1を仮圧着する方法は、透明基板12の透明電極17上に、バインダー樹脂層3が透明電極17側となるように、異方性導電フィルム1を配置する。
また、本発明は、上述した紫外線硬化型の導電性接着剤を用いる他、例えば赤外光等の他の波長の光線によって硬化する光硬化型の導電性接着剤を用いることもできる。
実施例1では、異方性導電フィルムのバインダー樹脂層として、
フェノキシ樹脂(YP−70:新日鉄住金化学株式会社製);20質量部
液状エポキシ樹脂(EP828:三菱化学株式会社製);30質量部
固形エポキシ樹脂(YD014:新日鉄住金化学株式会社製);20質量部
導電性粒子(AUL704:積水化学工業株式会社製);30質量部
光カチオン重合開始剤(SP−170:ADEKA株式会社製);5質量部
光吸収剤(LA−36:ADEKA株式会社製);5質量部
を混合させた樹脂溶液を作成し、この樹脂溶液をPETフィルム上に塗布、乾燥させ、厚さ20μmのフィルム状に成形したものを用いた。
実施例2では、バインダー樹脂層に光吸収剤(LA−31:ADEKA株式会社製)を5質量部配合した他は、実施例1と同じ配合の異方性導電フィルムを用いた。
実施例3では、バインダー樹脂層に光吸収剤として、光ラジカル重合開始剤(OXE01:BASF社製)を5質量部配合した他は、実施例1と同じ配合の異方性導電フィルムを用いた。
比較例1では、バインダー樹脂層に光吸収剤を配合していない他は、実施例1と同じ配合の異方性導電フィルムを用いた。
比較例2では、バインダー樹脂層に光吸収剤(LA−46:ADEKA株式会社製)を5質量部配合した他は、実施例1と同じ配合の異方性導電フィルムを用いた。
比較例3では、圧着ツールの押圧条件を、100℃、70MPa、5秒とした他は、比較例1と同じ条件とした。
反りの測定方法は、触針式表面粗度計(SE−3H:株式会社小阪研究所製)を用いて、図5に示すように、接合体サンプルのガラス基板40下面から触針41をスキャンし、評価用ICの接続後のガラス基板面の反り量(μm)を測定した。
実施例1,2、比較例1〜3に係る接続体について、デジタルマルチメータを使用して、接続初期及び信頼性試験後における導通抵抗(Ω)を測定した。導通抵抗値の測定は、図6に示すように、評価用ICのバンプ42と接続されたITOコーティングラスの配線43にデジタルマルチメータを接続し、いわゆる4端子法にて電流2mAを流したときの導通抵抗値を測定した。信頼性試験の条件は、85℃85%RH500hrとした。
Claims (10)
- 光重合性化合物と、
光重合開始剤と、
光吸収剤とを含有し、
上記光吸収剤の光吸収ピーク波長は上記光重合開始剤の光吸収ピーク波長よりも大きく、かつ、20nm以上離れている光硬化系異方性導電接着剤。 - 上記光吸収剤は、紫外線吸収剤又はラジカル重合開始剤である請求項1記載の光硬化系異方性導電接着剤。
- 上記光重合開始剤は、光カチオン重合開始剤である請求項1又は2に記載の光硬化系異方性導電接着剤。
- 上記光重合開始剤は、光ラジカル重合開始剤であり、
上記光吸収剤は、紫外線吸収剤である請求項1又は2記載の光硬化系異方性導電接着剤。 - 上記光重合開始剤の光吸収ピーク波長は、290nm〜330nmであり、
上記光吸収剤の光吸収ピーク波長は、320nm〜360nmである請求項1〜4のいずれか1項に記載の光硬化系異方性導電接着剤。 - 剥離基材に支持され、フィルム状に形成されている請求項1〜5のいずれか1項に記載の光硬化系異方性導電接着剤。
- ステージ上に載置された透明基板上に、光硬化系異方性導電接着剤を介して電子部品を配置し、
圧着ツールにより上記電子部品を上記透明基板に押圧しながら、光照射器より光照射を行う接続体の製造方法において、
上記光硬化系異方性導電接着剤は、光重合性化合物と、光重合開始剤と、光吸収剤とを含有し、上記光吸収剤の光吸収ピーク波長は上記光重合開始剤の光吸収ピーク波長よりも大きく、かつ、20nm以上離れ、
上記光照射器は、上記光重合開始剤の光吸収ピーク及び上記光吸収剤の光吸収ピークを含む波長の光を照射する接続体の製造方法。 - 室温下で、圧着ツールにより上記電子部品を上記透明基板に押圧しながら、光照射器より光照射を行う請求項7記載の接続体の製造方法。
- 上記ステージ及び/又は上記圧着ツールは、上記光吸収剤が上記光照射器から照射された光を吸収することによって発熱する温度以下の温度で加熱する請求項7記載の接続体の製造方法。
- ステージ上に載置された透明基板上に、光硬化系異方性導電接着剤を介して電子部品を配置し、
圧着ツールにより上記電子部品を上記透明基板に押圧しながら、光照射器より光照射を行う電子部品の接続方法において、
上記光硬化系異方性導電接着剤は、光重合性化合物と、光重合開始剤と、光吸収剤とを含有し、上記光吸収剤の光吸収ピーク波長は上記光重合開始剤の光吸収ピーク波長よりも大きく、かつ、20nm以上離れ、
上記光照射器は、上記光重合開始剤の光吸収ピーク及び上記光吸収剤の光吸収ピークを含む波長の光を照射する電子部品の接続方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014047585A JP6425899B2 (ja) | 2014-03-11 | 2014-03-11 | 異方性導電接着剤、接続体の製造方法及び電子部品の接続方法 |
PCT/JP2015/052919 WO2015137008A1 (ja) | 2014-03-11 | 2015-02-03 | 異方性導電接着剤、接続体の製造方法及び電子部品の接続方法 |
CN201580013038.5A CN106062118B (zh) | 2014-03-11 | 2015-02-03 | 各向异性导电粘接剂、连接体的制造方法及电子部件的连接方法 |
TW104103513A TWI673570B (zh) | 2014-03-11 | 2015-02-03 | 異向性導電接著劑、連接體之製造方法及電子零件之連接方法 |
KR1020167018337A KR102397500B1 (ko) | 2014-03-11 | 2015-02-03 | 이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법 |
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---|---|---|---|---|
JP2017097974A (ja) * | 2015-11-18 | 2017-06-01 | デクセリアルズ株式会社 | 異方性導電フィルム、電子部品の接続方法、及び接続構造体の製造方法 |
JP2017112148A (ja) * | 2015-12-14 | 2017-06-22 | デクセリアルズ株式会社 | 接続方法 |
JP2018065916A (ja) * | 2016-10-19 | 2018-04-26 | デクセリアルズ株式会社 | 接続体の製造方法 |
CN108929638A (zh) * | 2017-05-26 | 2018-12-04 | 特克特朗尼克公司 | 使用uv固化导电粘接剂的组件附接技术 |
JP2020077644A (ja) * | 2020-01-29 | 2020-05-21 | デクセリアルズ株式会社 | 熱硬化型異方性導電フィルム、接続方法、及び接合体 |
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TWI715542B (zh) * | 2014-11-12 | 2021-01-11 | 日商迪睿合股份有限公司 | 光硬化系異向性導電接著劑、連接體之製造方法及電子零件之連接方法 |
Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334893A (ja) * | 1989-06-30 | 1991-02-14 | Toyo Ink Mfg Co Ltd | 感熱転写材 |
JPH0346707A (ja) * | 1989-07-14 | 1991-02-28 | Sumitomo Bakelite Co Ltd | 異方導電フィルム |
JPH04306279A (ja) * | 1991-04-03 | 1992-10-29 | Seiko Epson Corp | 異方性導電接着剤および接合構造 |
JPH10502677A (ja) * | 1994-06-29 | 1998-03-10 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 異方性導電性の接着剤及び異方性導電性の接着剤の製造方法 |
JPH10340748A (ja) * | 1997-06-06 | 1998-12-22 | Hitachi Chem Co Ltd | 回路電極の接続方法 |
JPH1174313A (ja) * | 1997-08-29 | 1999-03-16 | Hitachi Chem Co Ltd | 電極の接続方法 |
JPH11236535A (ja) * | 1998-02-23 | 1999-08-31 | Hitachi Chem Co Ltd | 電極接続用接着剤及びこれを用いた微細電極の接続構造 |
JP2000219824A (ja) * | 1999-01-29 | 2000-08-08 | Toppan Forms Co Ltd | 光硬化銀塗料とこれが塗工されたシート類 |
WO2000046315A1 (fr) * | 1999-02-08 | 2000-08-10 | Hitachi Chemical Co., Ltd. | Adhesif, structure de connexion d'electrodes, et procede de connexion d'electrodes |
JP2002014437A (ja) * | 2000-06-28 | 2002-01-18 | Konica Corp | 熱現像記録材料 |
JP2002201437A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | 接着剤組成物、それを用いた回路端子の接続方法及び回路端子の接続構造 |
JP2006267964A (ja) * | 2005-03-25 | 2006-10-05 | Sekisui Chem Co Ltd | 液晶表示素子用シール剤、上下導通材料、液晶表示素子及び液晶表示素子の製造方法 |
JP2007025176A (ja) * | 2005-07-14 | 2007-02-01 | Fujifilm Holdings Corp | パターン形成材料、並びにパターン形成装置及び永久パターン形成方法 |
WO2007023834A1 (ja) * | 2005-08-23 | 2007-03-01 | Bridgestone Corporation | 接着剤組成物 |
JP2008174662A (ja) * | 2007-01-19 | 2008-07-31 | Sumitomo Bakelite Co Ltd | 樹脂組成物、フィルム付きまたは金属箔付き絶縁樹脂シート、多層プリント配線板、及び半導体装置 |
JP2009105361A (ja) * | 2007-10-05 | 2009-05-14 | Hitachi Chem Co Ltd | 回路接続材料、接続構造体及びその製造方法 |
JP2013014755A (ja) * | 2011-06-10 | 2013-01-24 | Sekisui Chem Co Ltd | 異方性導電材料、接続構造体及び接続構造体の製造方法 |
JP2013144760A (ja) * | 2012-01-16 | 2013-07-25 | Hitachi Chemical Co Ltd | 液状光硬化性樹脂組成物、光学部材、画像表示用装置及びその製造方法 |
JP2013220578A (ja) * | 2012-04-16 | 2013-10-28 | Hayakawa Rubber Co Ltd | 異方性導電フィルムの接着方法 |
JP2014210878A (ja) * | 2013-04-19 | 2014-11-13 | デクセリアルズ株式会社 | 異方性導電フィルム、接続方法、及び接合体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008252098A (ja) | 2008-03-31 | 2008-10-16 | Hitachi Chem Co Ltd | 回路板装置の製造法 |
JP2011008218A (ja) * | 2009-05-22 | 2011-01-13 | Chisso Corp | 光学異方体 |
-
2014
- 2014-03-11 JP JP2014047585A patent/JP6425899B2/ja active Active
-
2015
- 2015-02-03 CN CN201580013038.5A patent/CN106062118B/zh active Active
- 2015-02-03 KR KR1020167018337A patent/KR102397500B1/ko active IP Right Grant
- 2015-02-03 TW TW104103513A patent/TWI673570B/zh active
- 2015-02-03 WO PCT/JP2015/052919 patent/WO2015137008A1/ja active Application Filing
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0334893A (ja) * | 1989-06-30 | 1991-02-14 | Toyo Ink Mfg Co Ltd | 感熱転写材 |
JPH0346707A (ja) * | 1989-07-14 | 1991-02-28 | Sumitomo Bakelite Co Ltd | 異方導電フィルム |
JPH04306279A (ja) * | 1991-04-03 | 1992-10-29 | Seiko Epson Corp | 異方性導電接着剤および接合構造 |
JPH10502677A (ja) * | 1994-06-29 | 1998-03-10 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 異方性導電性の接着剤及び異方性導電性の接着剤の製造方法 |
JPH10340748A (ja) * | 1997-06-06 | 1998-12-22 | Hitachi Chem Co Ltd | 回路電極の接続方法 |
JPH1174313A (ja) * | 1997-08-29 | 1999-03-16 | Hitachi Chem Co Ltd | 電極の接続方法 |
JPH11236535A (ja) * | 1998-02-23 | 1999-08-31 | Hitachi Chem Co Ltd | 電極接続用接着剤及びこれを用いた微細電極の接続構造 |
JP2000219824A (ja) * | 1999-01-29 | 2000-08-08 | Toppan Forms Co Ltd | 光硬化銀塗料とこれが塗工されたシート類 |
WO2000046315A1 (fr) * | 1999-02-08 | 2000-08-10 | Hitachi Chemical Co., Ltd. | Adhesif, structure de connexion d'electrodes, et procede de connexion d'electrodes |
JP2002014437A (ja) * | 2000-06-28 | 2002-01-18 | Konica Corp | 熱現像記録材料 |
JP2002201437A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | 接着剤組成物、それを用いた回路端子の接続方法及び回路端子の接続構造 |
JP2006267964A (ja) * | 2005-03-25 | 2006-10-05 | Sekisui Chem Co Ltd | 液晶表示素子用シール剤、上下導通材料、液晶表示素子及び液晶表示素子の製造方法 |
JP2007025176A (ja) * | 2005-07-14 | 2007-02-01 | Fujifilm Holdings Corp | パターン形成材料、並びにパターン形成装置及び永久パターン形成方法 |
WO2007023834A1 (ja) * | 2005-08-23 | 2007-03-01 | Bridgestone Corporation | 接着剤組成物 |
JP2008174662A (ja) * | 2007-01-19 | 2008-07-31 | Sumitomo Bakelite Co Ltd | 樹脂組成物、フィルム付きまたは金属箔付き絶縁樹脂シート、多層プリント配線板、及び半導体装置 |
JP2009105361A (ja) * | 2007-10-05 | 2009-05-14 | Hitachi Chem Co Ltd | 回路接続材料、接続構造体及びその製造方法 |
JP2013014755A (ja) * | 2011-06-10 | 2013-01-24 | Sekisui Chem Co Ltd | 異方性導電材料、接続構造体及び接続構造体の製造方法 |
JP2013144760A (ja) * | 2012-01-16 | 2013-07-25 | Hitachi Chemical Co Ltd | 液状光硬化性樹脂組成物、光学部材、画像表示用装置及びその製造方法 |
JP2013220578A (ja) * | 2012-04-16 | 2013-10-28 | Hayakawa Rubber Co Ltd | 異方性導電フィルムの接着方法 |
JP2014210878A (ja) * | 2013-04-19 | 2014-11-13 | デクセリアルズ株式会社 | 異方性導電フィルム、接続方法、及び接合体 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017097974A (ja) * | 2015-11-18 | 2017-06-01 | デクセリアルズ株式会社 | 異方性導電フィルム、電子部品の接続方法、及び接続構造体の製造方法 |
JP2017112148A (ja) * | 2015-12-14 | 2017-06-22 | デクセリアルズ株式会社 | 接続方法 |
JP2018065916A (ja) * | 2016-10-19 | 2018-04-26 | デクセリアルズ株式会社 | 接続体の製造方法 |
CN108929638A (zh) * | 2017-05-26 | 2018-12-04 | 特克特朗尼克公司 | 使用uv固化导电粘接剂的组件附接技术 |
JP2020077644A (ja) * | 2020-01-29 | 2020-05-21 | デクセリアルズ株式会社 | 熱硬化型異方性導電フィルム、接続方法、及び接合体 |
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JP6425899B2 (ja) | 2018-11-21 |
CN106062118A (zh) | 2016-10-26 |
TW201535052A (zh) | 2015-09-16 |
CN106062118B (zh) | 2018-11-23 |
WO2015137008A1 (ja) | 2015-09-17 |
KR102397500B1 (ko) | 2022-05-12 |
KR20160130977A (ko) | 2016-11-15 |
TWI673570B (zh) | 2019-10-01 |
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