JP2015170754A - アンダーフィル材、積層シート及び半導体装置の製造方法 - Google Patents
アンダーフィル材、積層シート及び半導体装置の製造方法 Download PDFInfo
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- JP2015170754A JP2015170754A JP2014045119A JP2014045119A JP2015170754A JP 2015170754 A JP2015170754 A JP 2015170754A JP 2014045119 A JP2014045119 A JP 2014045119A JP 2014045119 A JP2014045119 A JP 2014045119A JP 2015170754 A JP2015170754 A JP 2015170754A
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Abstract
【解決手段】 本発明は、加熱処理前の150℃における溶融粘度が50Pa・s以上3000Pa・s以下であり、前記加熱処理前の150℃における溶融粘度をη1とし、130℃で1時間加熱処理した後の150℃における溶融粘度をη2とした際の(η2/η1)×100で表わされる粘度変化率が500%以下であり、DSC測定における−50℃から300℃までの昇温過程での全発熱量をQtとし、175℃で2時間加熱後の−50℃から300℃までの昇温過程での全発熱量をQhとした際の{(Qt−Qh)/Qt}×100で表わされる反応率が90%以上であるアンダーフィル材である。
【選択図】 図1E
Description
前記加熱処理前の150℃における溶融粘度をη1とし、130℃で1時間加熱処理した後の150℃における溶融粘度をη2とした際の(η2/η1)×100で表わされる粘度変化率が500%以下であり、
DSC測定における−50℃から300℃までの昇温過程での全発熱量をQtとし、175℃で2時間加熱後の−50℃から300℃までの昇温過程での全発熱量をQhとした際の{(Qt−Qh)/Qt}×100で表わされる反応率が90%以上であるアンダーフィル材である。
前記アクリル樹脂100重量部に対して前記潜在性硬化促進剤を1〜2重量部含むことが好ましい。
前記粘着剤層上に積層された当該アンダーフィル材と
を備える積層シートも含まれる。
当該アンダーフィル材が前記半導体素子に貼り合わされたアンダーフィル材付き半導体素子を準備する工程と、
前記被着体と前記半導体素子の間の空間を前記アンダーフィル材で充填しつつ前記半導体素子と前記被着体とを電気的に接続する接続工程と
を含む半導体装置の製造方法も含まれる。
以下、本発明の一実施形態について、ダイシングテープと該ダイシングテープ上に積層された所定のアンダーフィル材とを備える積層シート及びこれを用いる半導体装置の製造方法を例に説明する。従って、本実施形態では、粘着テープとしてダイシングテープを用いる。以下の説明は基本的にアンダーフィル材単独の場合にも適用することができる。
(積層シート)
準備工程では、ダイシングテープ1と該ダイシングテープ1上に積層された所定のアンダーフィル材2とを備える積層シート10を準備する(図1A参照)。
ダイシングテープ1は、基材1aと、基材1a上に積層された粘着剤層1bとを備えている。アンダーフィル材2は、粘着剤層1b上に積層されている。なお、アンダーフィル材2は、図1Aに示したように、半導体ウェハ3との貼り合わせに十分なサイズで設けられていればよく、ダイシングテープ1の全面に積層されていてもよい。
上記基材1aは積層シート10の強度母体となるものである。例えば、低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン−ブテン共重合体、エチレン−ヘキセン共重合体、ポリウレタン、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリカーボネート、ポリイミド、ポリエーテルエーテルケトン、ポリイミド、ポリエーテルイミド、ポリアミド、全芳香族ポリアミド、ポリフェニルスルフイド、アラミド(紙)、ガラス、ガラスクロス、フッ素樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、セルロース系樹脂、シリコーン樹脂、金属(箔)、紙等が挙げられる。粘着剤層1bが紫外線硬化型である場合、基材1aは紫外線に対し透過性を有するものが好ましい。
粘着剤層1bの形成に用いる粘着剤は、ダイシングの際にアンダーフィル材を介して半導体ウェハをしっかり保持するとともに、ピックアップの際にアンダーフィル材付きの半導体素子を剥離可能に制御できるものであれば特に制限されない。例えば、アクリル系粘着剤、ゴム系粘着剤等の一般的な感圧性接着剤を用いることができる。上記感圧性接着剤としては、半導体ウェハやガラス等の汚染をきらう電子部品の超純水やアルコール等の有機溶剤による清浄洗浄性等の点から、アクリル系ポリマーをベースポリマーとするアクリル系粘着剤が好ましい。
本実施形態におけるアンダーフィル材2は、表面実装(例えばフリップチップ実装等)された半導体素子と被着体との間の空間を充填する封止用フィルムとして好適に用いることができる。
前記熱可塑性樹脂としては、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン−酢酸ビニル共重合体、エチレン−アクリル酸共重合体、エチレン−アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、6−ナイロンや6,6−ナイロン等のポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、PETやPBT等の飽和ポリエステル樹脂、ポリアミドイミド樹脂、又はフッ素樹脂等が挙げられる。これらの熱可塑性樹脂は単独で、又は2種以上を併用して用いることができる。これらの熱可塑性樹脂のうち、イオン性不純物が少なく耐熱性が高く、半導体素子の信頼性を確保できるアクリル樹脂が特に好ましい。
前記熱硬化性樹脂としては、フェノール樹脂、アミノ樹脂、不飽和ポリエステル樹脂、エポキシ樹脂、ポリウレタン樹脂、シリコーン樹脂、又は熱硬化性ポリイミド樹脂等が挙げられる。これらの樹脂は、単独で又は2種以上を併用して用いることができる。特に、半導体素子を腐食させるイオン性不純物等の含有が少ないエポキシ樹脂が好ましい。また、エポキシ樹脂の硬化剤としてはフェノール樹脂が好ましい。
アンダーフィル材は硬化促進剤を含むことが好ましい。また、アンダーフィル材は潜在性硬化促進剤を含むことが好ましい。硬化促進剤として潜在性硬化促進剤を含むことで、加熱処理後の粘度上昇抑制と硬化反応性とをより高いレベルで両立することができる。潜在性硬化促進剤とは、ある特定の条件下(温度等)で硬化促進機能が発現されるものである。
本実施形態のアンダーフィル材2を予めある程度架橋をさせておく場合には、作製に際し、重合体の分子鎖末端の官能基等と反応する多官能性化合物を架橋剤として添加させておくのがよい。これにより、高温下での接着特性を向上させ、耐熱性の改善を図ることができる。
また、アンダーフィル材2には、無機充填剤を適宜配合することができる。無機充填剤の配合は、導電性の付与や熱伝導性の向上、貯蔵弾性率の調節等を可能にする。
なお、アンダーフィル材2には、前記無機充填剤以外に、必要に応じて他の添加剤を適宜に配合することができる。他の添加剤としては、例えば難燃剤、シランカップリング剤又はイオントラップ剤等が挙げられる。前記難燃剤としては、例えば、三酸化アンチモン、五酸化アンチモン、臭素化エポキシ樹脂等が挙げられる。これらは、単独で、又は2種以上を併用して用いることができる。前記シランカップリング剤としては、例えば、β−(3、4−エポキシシクロヘキシル)エチルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン等が挙げられる。これらの化合物は、単独で又は2種以上を併用して用いることができる。前記イオントラップ剤としては、例えばハイドロタルサイト類、水酸化ビスマス等が挙げられる。これらは、単独で又は2種以上を併用して用いることができる。
熱硬化前の上記アンダーフィル材2の温度23℃、湿度70%の条件下における吸水率は、1重量%以下であることが好ましく、0.5重量%以下であることがより好ましい。アンダーフィル材2が上記のような吸水率を有することにより、アンダーフィル材2への水分の吸収が抑制され、半導体素子31の実装時のボイドの発生をより効率的に抑制することができる。なお、上記吸水率の下限は小さいほど好ましく、実質的に0重量%が好ましく、0重量%であることがより好ましい。
本実施の形態に係る積層シート10は、例えばダイシングテープ1及びアンダーフィル材2を別々に作製しておき、最後にこれらを貼り合わせることにより作成することができる。具体的には、以下のような手順に従って作製することができる。
貼合せ工程では、図1Aに示すように、接続部材4aを有する回路面3a及び裏面電極4bを有する回路面3bが両面に形成された半導体ウェハ3と上記積層シートのアンダーフィル材2とを貼り合わせる。なお、所定の厚さに薄型化された半導体ウェハの強度は弱いことから、補強のために半導体ウェハを仮固定材を介してサポートガラス等の支持体に固定することがある(図示せず)。この場合は、半導体ウェハとアンダーフィル材との貼り合わせ後に、仮固定材とともに支持体を剥離する工程を含んでいてもよい。半導体ウェハ3のいずれの回路面とアンダーフィル材2とを貼り合わせるかは、目的とする半導体装置の構造に応じて変更すればよい。
半導体ウェハ3の回路面3a、3bには、それぞれ複数の接続部材4a及び複数の裏面電極4bが形成されている(図1A参照)。バンプや導電材等の接続部材や裏面電極の材質としては、特に限定されず、例えば、錫−鉛系金属材、錫−銀系金属材、錫−銀−銅系金属材、錫−亜鉛系金属材、錫−亜鉛−ビスマス系金属材等のはんだ類(合金)や、金系金属材、銅系金属材等が挙げられる。接続部材及び裏面電極の高さも用途に応じて定められ、一般的には15〜100μm程度である。もちろん、半導体ウェハ3における個々の接続部材の高さは同一でも異なっていてもよい。
0.5≦Y/X≦2
まず、積層シート10のアンダーフィル材2上に任意に設けられたセパレータを適宜に剥離し、図1Aに示すように、前記半導体ウェハ3の接続部材4aが形成された回路面3aとアンダーフィル材2とを対向させ、前記アンダーフィル材2と前記半導体ウェハ3とを貼り合わせる(マウント)。
ダイシング工程では、直接光や間接光、赤外線等により求めたダイシング位置に基づき、図1Bに示すように半導体ウェハ3及びアンダーフィル材2をダイシングしてダイシングされたアンダーフィル材付きの半導体素子31を形成する。ダイシング工程を経ることで、半導体ウェハ3を所定のサイズに切断して個片化(小片化)し、半導体チップ(半導体素子)31を製造する。ここで得られる半導体チップ31は同形状に切断されたアンダーフィル材2と一体になっている。ダイシングは、半導体ウェハ3のアンダーフィル材2を貼り合わせた回路面3aとは反対側の回路面3b側から常法に従い行われる。
ダイシングテープ1に接着固定された半導体チップ31を回収するために、図1Cに示すように、アンダーフィル材2付きの半導体チップ31のピックアップを行って、半導体チップ31とアンダーフィル材2の積層体Aをダイシングテープ1より剥離する。
実装工程では、半導体素子31の実装位置を直接光や間接光、赤外線等により予め求めておき、求めた実装位置に従って、被着体16と半導体素子31の間の空間をアンダーフィル材2で充填しつつ接続部材4aを介して半導体素子31と被着体16とを電気的に接続する(図1D参照)。具体的には、積層体Aの半導体チップ31を、半導体チップ31の回路面3aが被着体16と対向する形態で、被着体16に常法に従い固定させる。例えば、半導体チップ31に形成されているバンプ(接続部材)4aを、被着体16の接続パッドに被着された接合用の導電材17(はんだ等)に接触させて押圧しながら導電材を溶融させることにより、半導体チップ31と被着体16との電気的接続を確保し、半導体チップ31を被着体16に固定させることができる。半導体チップ31の回路面3aにはアンダーフィル材2が貼り付けられているので、半導体チップ31と被着体16との電気的接続と同時に、半導体チップ31と被着体16との間の空間がアンダーフィル材2により充填されることになる。
半導体素子31と被着体16と間、及び必要に応じて多段積層した半導体素子間の電気的接続を行った後は、アンダーフィル材2を加熱により硬化させる。これにより、半導体素子31の表面を保護することができるとともに、半導体素子31と被着体16との間及び半導体素子間等の接続信頼性を確保することができる。アンダーフィル材の硬化のための加熱温度としては特に限定されず、150〜250℃程度であればよい。なお、実装工程における加熱処理によりアンダーフィル材が硬化する場合、本工程は省略することができる。以上の工程を経て、一段の半導体素子31を有する半導体装置20や半導体素子が多段積層された半導体装置40を得ることができる。
次に、実装された半導体チップを備える半導体装置20又は40全体を保護するために封止工程を行ってもよい。封止工程は、封止樹脂を用いて行われる。このときの封止条件としては特に限定されないが、通常、175℃で60秒間〜90秒間の加熱を行うことにより、封止樹脂の熱硬化が行われるが、本発明はこれに限定されず、例えば165℃〜185℃で、数分間キュアすることができる。
次に、当該積層シートを用いて得られる半導体装置について図面を参照しつつ説明する(図1D、1E参照)。本実施形態に係る半導体装置40では、半導体素子31と被着体16とが、半導体素子31上に形成されたバンプ(接続部材)4a及び被着体16上に設けられた導電材17を介して電気的に接続されている。さらに、半導体素子31の裏面電極4bと半導体素子32の接続部材4aとが接合されることで、半導体素子31、32間の電気的接続が図られている。半導体素子31と被着体16との間及び半導体素子31、32間には、その空間を充填するようにアンダーフィル材2が配置されている。半導体装置40は、所定のアンダーフィル材2及び光照射による位置合わせを採用する上記製造方法にて得られるので、半導体素子31と被着体16との間及び半導体素子31、32間で良好な電気的接続が達成されている。従って、半導体素子の表面保護、半導体素子31と被着体16との間の空間及び半導体素子31、32間の空間の充填、並びに半導体素子31と被着体16との間及び半導体素子31、32間の電気的接続がそれぞれ十分なレベルとなり、半導体装置40として高い信頼性を発揮することができる。
第1実施形態では両面に回路が形成された半導体ウェハを用いているのに対し、本実施形態では片面に回路が形成された半導体ウェハを用いて半導体装置を製造する。また、本実施形態で用いる半導体ウェハが目的とする厚さを有していない場合、半導体ウェハの回路面とは反対側の裏面を研削する裏面研削工程を行う。従って、本実施形態では、裏面研削用テープ上に積層されたアンダーフィル材を備える積層シートを用いて半導体ウェハの裏面研削を行い、その後、ダイシングテープ上でのダイシング、半導体素子のピックアップを行い、最後に半導体素子を被着体に実装する。このような裏面研削用テープの基材及び粘着剤層、並びにアンダーフィル材としては、第1実施形態と同様のものを用いることができる。
第1実施形態では積層シートの構成部材としてダイシングテープを用いたが、本実施形態では該ダイシングテープの粘着剤層を設けずに基材単独を用いる。従って、本実施形態の積層シートとしては、基材上にアンダーフィル材が積層された状態となる。本実施形態では、ピックアップ工程前の紫外線照射は粘着剤層の省略により行わない。これらの点を除けば、第1実施形態と同様の工程を経ることで所定の半導体装置を製造することができる。
第1実施形態から第3実施形態では、ダイシング工程においてダイシングブレードを用いるダイシングを採用しているが、これに代えて、レーザー照射により半導体ウェハ内部に改質部分を形成し、この改質部分に沿って半導体ウェハを分割して個片化するいわゆるステルスダイシングを採用してもよい。
(アンダーフィル材の作製)
以下の成分を表1に示す割合でメチルエチルケトンに溶解して、固形分濃度が25.4〜60.6重量%となる接着剤組成物の溶液を調製した。
エポキシ樹脂1:商品名「エピコート1004」、JER株式会社製
エポキシ樹脂2:商品名「エピコート828」、JER株式会社製
フェノール樹脂:商品名「ミレックスXLC−4L」、三井化学株式会社製
無機充填剤:球状シリカ(商品名「SO−25R」、株式会社アドマテックス製)
潜在性硬化促進剤:リン系硬化促進剤(商品名「TPP−K」、北興化学株式会社製)
フラックス:o−アニス酸(商品名「オルトアニス酸」、東京化成株式会社製)
作製したアンダーフィル材を加熱処理を経ずにサンプルとし、レオメーター(HAAKE社製、RS−1)を用いて、パラレルプレート法により測定した。詳細には、ギャップ100μm、回転プレート直径20mm、回転速度5s−1、昇温速度10℃/分の条件とし、80℃から昇温させ、アンダーフィル材の硬化反応により粘度が上昇して、最終的に回転プレートが回転できなくなる温度(なお、全ての実施例及び比較例で200℃以上であった。)まで測定を行った。その際の150℃での溶融粘度を読み取った。結果を表1に示す。
上記溶融粘度の測定における150℃での溶融粘度をη1とした。さらに同様の手順を130℃で1時間加熱処理したサンプルについても行い、その際の150℃での溶融粘度η2を読み取った。下記式に基づき、130℃で1時間加熱処理行う前後での粘度変化率を算出した。結果を表1に示す。
粘度変化率(%)=(η2/η1)×100
熱示差強度測定装置(TAインスツルメンツ社製、Q2000)を用い、加熱処理前のアンダーフィル材を−50℃から300℃まで10℃/minにて昇温させた際の全発熱量Qtを算出した。別途、加熱処理前のアンダーフィル材に対して175℃で2時間の加熱処理を行い、この加熱処理後のサンプルについて−50℃から300℃まで10℃/minにて昇温させた際の全発熱量Qhを測定した。下記式に基づき、175℃で2時間加熱処理した際の反応率を算出した。結果を表1に示す。
反応率(%)={(Qt−Qh)/Qt}×100
一方の面にバンプが形成され、他方の面にパッドが形成されている半導体チップを用意し、この半導体チップのバンプが形成されている側の面に、実施例及び比較例で作製したアンダーフィル材を80℃で貼り合わせた。半導体チップとしては、以下の仕様のものを用いた。
サイズ:5mm角
厚さ:0.05mm(50μm)
バンプの材質:銅ピラー+Sn−Ag
バンプサイズ:高さ15μm、直径20μm
バンプピッチ:40μm、フルアレイ
パッド:Ni−Auパッド
パッドの高さ:2μm
フリップチップボンダー:商品名「FC−3000W」東レエンジニアリング製
加熱温度:150℃
荷重:20N
保持時間:2秒
フリップチップボンダー:商品名「FC−3000W」東レエンジニアリング製
加熱温度:260℃
荷重:30N
保持時間:10秒
得られたチップ接合体を175℃で2時間加熱処理し、アンダーフィル材を硬化させた。加熱処理後のチップ接合体を85℃85%Rhの環境下に168時間放置した後、リフロー試験を行った。このときのリフロー試験の条件はJEDEC(J−STD−020C)で定められる条件に沿って行った。次いで、リフロー後、接合部分を含むようにチップ接合体を切断した。切断面を光学顕微鏡(1000倍)を用いて確認し、問題なくバンプがパッドと接合していた場合を「○」、バンプにクラックが発生していたか、又はバンプがパッドに接合されていなかった場合を「×」として評価した。結果を表1に示す。
1a 基材
1b 粘着剤層
2 アンダーフィル材
3 半導体ウェハ
10 積層シート
16 被着体
20、40 半導体装置
31 半導体チップ(半導体素子)
Claims (6)
- 加熱処理前の150℃における溶融粘度が50Pa・s以上3000Pa・s以下であり、
前記加熱処理前の150℃における溶融粘度をη1とし、130℃で1時間加熱処理した後の150℃における溶融粘度をη2とした際の(η2/η1)×100で表わされる粘度変化率が500%以下であり、
DSC測定における−50℃から300℃までの昇温過程での全発熱量をQtとし、175℃で2時間加熱後の−50℃から300℃までの昇温過程での全発熱量をQhとした際の{(Qt−Qh)/Qt}×100で表わされる反応率が90%以上であるアンダーフィル材。 - 潜在性硬化促進剤を含む請求項1に記載のアンダーフィル材。
- アクリル樹脂を含み、
前記アクリル樹脂100重量部に対して前記潜在性硬化促進剤を1〜2重量部含む請求項2に記載のアンダーフィル材。 - 基材及び該基材上に設けられた粘着剤層を有する粘着テープと、
前記粘着剤層上に積層された請求項1〜3のいずれか1項に記載のアンダーフィル材と
を備える積層シート。 - 前記粘着テープは、半導体ウェハの裏面研削用テープ又はダイシングテープである請求項4に記載の積層シート。
- 被着体と、該被着体と電気的に接続された半導体素子と、該被着体と該半導体素子との間の空間を充填するアンダーフィル材とを備える半導体装置の製造方法であって、
請求項1〜3のいずれか1項に記載のアンダーフィル材が前記半導体素子に貼り合わされたアンダーフィル材付き半導体素子を準備する工程と、
前記被着体と前記半導体素子の間の空間を前記アンダーフィル材で充填しつつ前記半導体素子と前記被着体とを電気的に接続する接続工程と
を含む半導体装置の製造方法。
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Cited By (4)
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JP6204640B1 (ja) * | 2016-03-30 | 2017-09-27 | 三井化学東セロ株式会社 | 半導体装置の製造方法 |
JP2019160870A (ja) * | 2018-03-08 | 2019-09-19 | 日東電工株式会社 | 封止用シート |
WO2024024883A1 (ja) * | 2022-07-29 | 2024-02-01 | ナガセケムテックス株式会社 | モールドアンダーフィル封止用シートおよびこれを用いる電子部品実装基板の封止方法 |
KR20240065241A (ko) | 2021-10-05 | 2024-05-14 | 닛토덴코 가부시키가이샤 | 보호 시트, 전자부품의 제조 방법, 및 표시 장치의 표시면을 구성하는 유리편의 제조 방법 |
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CN105493257A (zh) * | 2015-07-14 | 2016-04-13 | 歌尔声学股份有限公司 | 倒装裸片的组装方法、制造方法、装置和电子设备 |
CN106486572B (zh) | 2015-09-02 | 2020-04-28 | 新世纪光电股份有限公司 | 发光二极管芯片 |
TWI783385B (zh) | 2016-08-18 | 2022-11-11 | 新世紀光電股份有限公司 | 微型發光二極體及其製造方法 |
CN107768487A (zh) * | 2016-08-18 | 2018-03-06 | 新世纪光电股份有限公司 | 巨量转移电子元件的方法 |
EP3828922A1 (en) * | 2019-11-26 | 2021-06-02 | IMEC vzw | A method for bonding semiconductor components |
KR102584580B1 (ko) * | 2020-09-09 | 2023-10-05 | 한국전자통신연구원 | 도전 접착제용 조성물, 이의 경화물을 포함하는 반도체 패키지, 및 이를 이용한 반도체 패키지의 제조 방법 |
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- 2015-02-20 WO PCT/JP2015/054805 patent/WO2015133297A1/ja active Application Filing
- 2015-02-20 US US15/124,002 patent/US10014235B2/en active Active
- 2015-02-20 KR KR1020167023340A patent/KR20160130757A/ko unknown
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JP6204640B1 (ja) * | 2016-03-30 | 2017-09-27 | 三井化学東セロ株式会社 | 半導体装置の製造方法 |
WO2017170451A1 (ja) * | 2016-03-30 | 2017-10-05 | 三井化学東セロ株式会社 | 半導体装置の製造方法 |
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JP2019160870A (ja) * | 2018-03-08 | 2019-09-19 | 日東電工株式会社 | 封止用シート |
JP6997654B2 (ja) | 2018-03-08 | 2022-01-17 | 日東電工株式会社 | 封止用シート |
KR20240065241A (ko) | 2021-10-05 | 2024-05-14 | 닛토덴코 가부시키가이샤 | 보호 시트, 전자부품의 제조 방법, 및 표시 장치의 표시면을 구성하는 유리편의 제조 방법 |
WO2024024883A1 (ja) * | 2022-07-29 | 2024-02-01 | ナガセケムテックス株式会社 | モールドアンダーフィル封止用シートおよびこれを用いる電子部品実装基板の封止方法 |
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WO2015133297A1 (ja) | 2015-09-11 |
TW201538583A (zh) | 2015-10-16 |
US20170018472A1 (en) | 2017-01-19 |
KR20160130757A (ko) | 2016-11-14 |
JP6280400B2 (ja) | 2018-02-14 |
US10014235B2 (en) | 2018-07-03 |
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