JP2015153781A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2015153781A JP2015153781A JP2014023854A JP2014023854A JP2015153781A JP 2015153781 A JP2015153781 A JP 2015153781A JP 2014023854 A JP2014023854 A JP 2014023854A JP 2014023854 A JP2014023854 A JP 2014023854A JP 2015153781 A JP2015153781 A JP 2015153781A
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- silicide
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 96
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims abstract description 38
- 238000002513 implantation Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 210000000746 body region Anatomy 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000007670 refining Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 45
- 239000013078 crystal Substances 0.000 description 42
- 230000007547 defect Effects 0.000 description 42
- 229910052786 argon Inorganic materials 0.000 description 24
- 229910052796 boron Inorganic materials 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- -1 Boron ions Chemical class 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
る。
図1に示すように、本実施例の半導体装置10はケイ素(Si)で形成された半導体基板11を備えている。なお、以下の説明において、z方向は半導体基板11の厚み方向を意味し、x方向はz方向に垂直な一方向を意味し、y方向はx方向及びy方向に垂直な方向を意味する。半導体基板11の上面11a(図1の二点鎖線で示す面)には、複数のシリサイド電極44が形成されている。各シリサイド電極44は、y方向に沿って長く延びている。各シリサイド電極44は、ニッケルシリサイド(NiSi)により形成されている。
11:半導体基板
12:マスク
16:ゲート電極
24:ゲートトレンチ
26:絶縁膜
32:ドリフト領域
36:低濃度領域
37:ボディ領域
38:コンタクト領域(高濃度領域)
40:エミッタ領域
43:金属
44:シリサイド電極
Claims (4)
- Siを含有しており、第1導電型のボディ領域を有する半導体基板を用いて半導体装置を製造する方法であって、
前記ボディ領域の表面のうちの第1範囲に第1導電型の第1不純物を注入する工程(a)と、
前記表面のうちの第2範囲に第2導電型の第2不純物を注入することによって、前記第2範囲に露出する第2導電型の半導体領域を形成する工程(b)と、
前記表面のうちの前記第1範囲と少なくとも部分的に重複するとともに、前記第2範囲に隣接する第3範囲に、前記第1不純物の注入深さよりも注入深さが浅くなるように、前記第1不純物よりも多いドーズ量かつ前記第2不純物よりも多いドーズ量で荷電粒子を注入する工程(c)と、
前記工程(a)〜(c)の実施後に、前記表面のうちの前記第2範囲及び前記第3範囲に金属を堆積させ、前記金属と前記半導体基板を反応させてシリサイド層を形成する工程、を備える方法。 - 前記第1不純物の注入と前記荷電粒子の注入を同一のマスクを用いて実施し、
前記第2範囲と前記第3範囲が部分的に重複する、請求項1の方法。 - 前記第2不純物の注入深さが、前記荷電粒子の注入深さよりも深い請求項2の方法。
- Siを含有する半導体基板と前記半導体基板の表面に形成されたシリサイド層を備えた半導体装置であって、
前記シリサイド層に接する第1導電型の第1半導体領域と、
前記シリサイド層及び前記第1半導体領域に接する第2導電型の第2半導体領域と、
前記第1半導体領域の裏面側に形成されており、前記第1半導体領域によって前記第2半導体領域から分離されている第2導電型のドリフト領域と、
前記第1半導体領域及び前記第2半導体領域を貫通して前記ドリフト領域にまで延びるゲートトレンチと、
前記ゲートトレンチ内に配置されている絶縁層と、
前記ゲートトレンチ内に配置され、前記絶縁層を介して前記第1半導体領域と対向しているゲート電極、
を備え、
前記シリサイド層は、前記第2半導体領域の表面に接する第1部分と、前記第1部分よりも深い位置まで延びており、前記第2半導体領域の側面に接する第2部分と、前記第1部分よりも深く、かつ、前記第2部分よりも浅い位置まで延びており、前記第1半導体領域の表面に接する第3部分を有している、
半導体装置。
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JPWO2018052098A1 (ja) * | 2016-09-14 | 2018-12-27 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP7387566B2 (ja) | 2020-09-18 | 2023-11-28 | 株式会社東芝 | 半導体装置 |
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JP2016096307A (ja) * | 2014-11-17 | 2016-05-26 | トヨタ自動車株式会社 | 半導体装置 |
CN107481929B (zh) * | 2016-06-08 | 2020-08-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、电子装置 |
DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
JP2019129300A (ja) * | 2018-01-26 | 2019-08-01 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP7404703B2 (ja) * | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 窒化物半導体装置の製造方法及び窒化物半導体装置 |
JP7481989B2 (ja) * | 2020-10-08 | 2024-05-13 | 株式会社東芝 | 半導体装置 |
CN117238969A (zh) * | 2023-11-13 | 2023-12-15 | 深圳基本半导体有限公司 | 碳化硅mosfet器件及其制备方法与应用 |
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