JP2015144191A - 波長可変レーザの波長切り替え方法 - Google Patents

波長可変レーザの波長切り替え方法 Download PDF

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Publication number
JP2015144191A
JP2015144191A JP2014016910A JP2014016910A JP2015144191A JP 2015144191 A JP2015144191 A JP 2015144191A JP 2014016910 A JP2014016910 A JP 2014016910A JP 2014016910 A JP2014016910 A JP 2014016910A JP 2015144191 A JP2015144191 A JP 2015144191A
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Prior art keywords
wavelength
temperature
etalon
tunable laser
output
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JP2014016910A
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Japanese (ja)
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JP2015144191A5 (enExample
Inventor
充宜 宮田
Mitsuyoshi Miyata
充宜 宮田
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2014016910A priority Critical patent/JP2015144191A/ja
Priority to US14/610,890 priority patent/US9614349B2/en
Publication of JP2015144191A publication Critical patent/JP2015144191A/ja
Publication of JP2015144191A5 publication Critical patent/JP2015144191A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2014016910A 2014-01-31 2014-01-31 波長可変レーザの波長切り替え方法 Pending JP2015144191A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014016910A JP2015144191A (ja) 2014-01-31 2014-01-31 波長可変レーザの波長切り替え方法
US14/610,890 US9614349B2 (en) 2014-01-31 2015-01-30 Method for switching output wavelength of tunable wavelength laser, method for switching wavelength of tunable wavelength laser, and tunable wavelength laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014016910A JP2015144191A (ja) 2014-01-31 2014-01-31 波長可変レーザの波長切り替え方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147249A (ja) * 2016-02-15 2017-08-24 古河電気工業株式会社 波長可変型レーザモジュールおよびその波長制御方法
JP2018133383A (ja) * 2017-02-14 2018-08-23 古河電気工業株式会社 波長可変光源の制御装置および制御方法
JP2021512497A (ja) * 2018-02-02 2021-05-13 ブロリス センサー テクノロジー, ユーエイビーBrolis Sensor Technology, Uab 広帯域波長可変レーザー及びそのレーザーシステムの波長判定

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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JP6223014B2 (ja) * 2013-06-26 2017-11-01 キヤノン株式会社 被検体情報取得装置
JP2015050284A (ja) * 2013-08-30 2015-03-16 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP6292499B2 (ja) * 2013-08-30 2018-03-14 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
CN106482385B (zh) * 2015-08-31 2019-05-28 华为技术有限公司 一种热电制冷模组、光器件及光模组
JP6821901B2 (ja) * 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
CN111712980B (zh) * 2018-02-14 2023-06-06 古河电气工业株式会社 光模块、其波长控制方法以及其校准方法
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6185233B1 (en) * 1999-06-08 2001-02-06 Alcatel Output power controlled wavelength stabilizing system
JP2005064300A (ja) * 2003-08-15 2005-03-10 Nippon Telegr & Teleph Corp <Ntt> 波長可変レーザ光源
JP2012124287A (ja) * 2010-12-07 2012-06-28 Furukawa Electric Co Ltd:The 波長可変光源装置および波長可変光源装置の制御方法

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JP3964676B2 (ja) * 1999-07-01 2007-08-22 富士通株式会社 多波長対応の光送信装置および光送信波長制御方法
JP4071917B2 (ja) * 2000-04-21 2008-04-02 ユーディナデバイス株式会社 光半導体装置
US6671296B2 (en) * 2000-10-10 2003-12-30 Spectrasensors, Inc. Wavelength locker on optical bench and method of manufacture
US20030067949A1 (en) * 2001-06-07 2003-04-10 The Furukawa Electric Co., Ltd. Optical module, transmitter and WDM transmitting device
JP5008831B2 (ja) * 2005-02-03 2012-08-22 住友電工デバイス・イノベーション株式会社 レーザ装置、レーザ装置の制御装置、レーザ装置の制御方法、レーザ装置の波長切換方法およびレーザ装置の制御データ
JP4943255B2 (ja) 2007-07-20 2012-05-30 住友電工デバイス・イノベーション株式会社 半導体レーザの制御方法
US7929581B2 (en) * 2007-12-28 2011-04-19 Eudyna Devices Inc. Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device
CN101971445B (zh) * 2008-02-05 2012-11-07 住友电工光电子器件创新株式会社 激光设备
JP2010226032A (ja) * 2009-03-25 2010-10-07 Sumitomo Electric Device Innovations Inc 光半導体装置
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6185233B1 (en) * 1999-06-08 2001-02-06 Alcatel Output power controlled wavelength stabilizing system
JP2005064300A (ja) * 2003-08-15 2005-03-10 Nippon Telegr & Teleph Corp <Ntt> 波長可変レーザ光源
JP2012124287A (ja) * 2010-12-07 2012-06-28 Furukawa Electric Co Ltd:The 波長可変光源装置および波長可変光源装置の制御方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147249A (ja) * 2016-02-15 2017-08-24 古河電気工業株式会社 波長可変型レーザモジュールおよびその波長制御方法
JP7019283B2 (ja) 2016-02-15 2022-02-15 古河電気工業株式会社 波長可変型レーザモジュールおよびその波長制御方法
JP2018133383A (ja) * 2017-02-14 2018-08-23 古河電気工業株式会社 波長可変光源の制御装置および制御方法
JP2021512497A (ja) * 2018-02-02 2021-05-13 ブロリス センサー テクノロジー, ユーエイビーBrolis Sensor Technology, Uab 広帯域波長可変レーザー及びそのレーザーシステムの波長判定
JP7162066B2 (ja) 2018-02-02 2022-10-27 ブロリス センサー テクノロジー，ユーエイビー 広帯域波長可変レーザー及びそのレーザーシステムの波長判定

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US20150222078A1 (en) 2015-08-06

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