JP2015135927A - 半導体装置、半導体モジュール、および電子回路 - Google Patents

半導体装置、半導体モジュール、および電子回路 Download PDF

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Publication number
JP2015135927A
JP2015135927A JP2014007506A JP2014007506A JP2015135927A JP 2015135927 A JP2015135927 A JP 2015135927A JP 2014007506 A JP2014007506 A JP 2014007506A JP 2014007506 A JP2014007506 A JP 2014007506A JP 2015135927 A JP2015135927 A JP 2015135927A
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Japan
Prior art keywords
electrode
semiconductor region
switching element
wiring
region
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Abandoned
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JP2014007506A
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English (en)
Japanese (ja)
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JP2015135927A5 (https=
Inventor
達也 西脇
Tatsuya Nishiwaki
達也 西脇
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Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2014007506A priority Critical patent/JP2015135927A/ja
Priority to CN201410299803.1A priority patent/CN104795393A/zh
Priority to US14/327,001 priority patent/US20150207407A1/en
Publication of JP2015135927A publication Critical patent/JP2015135927A/ja
Publication of JP2015135927A5 publication Critical patent/JP2015135927A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5438—Dispositions of bond wires the bond wires having multiple connections on the same bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
JP2014007506A 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路 Abandoned JP2015135927A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014007506A JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路
CN201410299803.1A CN104795393A (zh) 2014-01-20 2014-06-27 半导体装置、半导体模块以及电子电路
US14/327,001 US20150207407A1 (en) 2014-01-20 2014-07-09 Semiconductor Device, Semiconductor Module, and Electronic Circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014007506A JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路

Publications (2)

Publication Number Publication Date
JP2015135927A true JP2015135927A (ja) 2015-07-27
JP2015135927A5 JP2015135927A5 (https=) 2016-04-14

Family

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JP2014007506A Abandoned JP2015135927A (ja) 2014-01-20 2014-01-20 半導体装置、半導体モジュール、および電子回路

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Country Link
US (1) US20150207407A1 (https=)
JP (1) JP2015135927A (https=)
CN (1) CN104795393A (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162910A (ja) * 2016-03-08 2017-09-14 国立大学法人東京工業大学 半導体装置および測定装置
JP2017174863A (ja) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 半導体装置
US10566452B2 (en) 2018-03-19 2020-02-18 Kabushiki Kaisha Toshiba Semiconductor device and control device
JP2023112319A (ja) * 2022-02-01 2023-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置
JP2024133724A (ja) * 2020-08-12 2024-10-02 富士電機株式会社 半導体モジュール
WO2025150446A1 (ja) * 2024-01-12 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2026079377A1 (ja) * 2024-10-09 2026-04-16 ヌヴォトンテクノロジージャパン株式会社 部品内蔵基板
JP7851234B2 (ja) 2022-12-02 2026-04-24 三菱電機株式会社 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289635B2 (ja) * 2014-06-26 2018-03-07 三菱電機株式会社 半導体装置
DE102016102493B3 (de) * 2016-02-12 2017-07-20 Infineon Technologies Ag Halbleitervorrichtung mit einem temperatursensor, temperatursensor und verfahren zum herstellen einer halbleitervorrichtung mit einem temperatursensor
US10811985B2 (en) 2016-08-26 2020-10-20 General Electric Company Power conversion system and an associated method thereof
JP7352437B2 (ja) * 2019-10-25 2023-09-28 株式会社東芝 半導体装置
JP7249269B2 (ja) * 2019-12-27 2023-03-30 株式会社東芝 半導体装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616945A (en) * 1995-10-13 1997-04-01 Siliconix Incorporated Multiple gated MOSFET for use in DC-DC converter
JP4610199B2 (ja) * 2004-01-14 2011-01-12 ルネサスエレクトロニクス株式会社 Ｄｃ−ｄｃコンバータ用半導体集積回路及びｄｃ−ｄｃコンバータ
JP5547429B2 (ja) * 2009-06-19 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置
CN203118955U (zh) * 2012-12-19 2013-08-07 中兴通讯股份有限公司 一种晶体管及晶体管的散热装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017162910A (ja) * 2016-03-08 2017-09-14 国立大学法人東京工業大学 半導体装置および測定装置
JP2017174863A (ja) * 2016-03-18 2017-09-28 トヨタ自動車株式会社 半導体装置
US10566452B2 (en) 2018-03-19 2020-02-18 Kabushiki Kaisha Toshiba Semiconductor device and control device
JP2024133724A (ja) * 2020-08-12 2024-10-02 富士電機株式会社 半導体モジュール
JP7768304B2 (ja) 2020-08-12 2025-11-12 富士電機株式会社 半導体モジュール
JP2023112319A (ja) * 2022-02-01 2023-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7742782B2 (ja) 2022-02-01 2025-09-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置
JP7851234B2 (ja) 2022-12-02 2026-04-24 三菱電機株式会社 半導体装置
WO2025150446A1 (ja) * 2024-01-12 2025-07-17 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2026079377A1 (ja) * 2024-10-09 2026-04-16 ヌヴォトンテクノロジージャパン株式会社 部品内蔵基板

Also Published As

Publication number Publication date
US20150207407A1 (en) 2015-07-23
CN104795393A (zh) 2015-07-22

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