JP2015135839A - 半導体装置、固体撮像装置、および撮像装置 - Google Patents

半導体装置、固体撮像装置、および撮像装置 Download PDF

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Publication number
JP2015135839A
JP2015135839A JP2014005596A JP2014005596A JP2015135839A JP 2015135839 A JP2015135839 A JP 2015135839A JP 2014005596 A JP2014005596 A JP 2014005596A JP 2014005596 A JP2014005596 A JP 2014005596A JP 2015135839 A JP2015135839 A JP 2015135839A
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Prior art keywords
substrate
opening
substrates
semiconductor layer
wiring
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JP2014005596A
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Japanese (ja)
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JP2015135839A5 (cg-RX-API-DMAC7.html
Inventor
直裕 高澤
Naohiro Takazawa
直裕 高澤
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Olympus Corp
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Olympus Corp
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Application filed by Olympus Corp filed Critical Olympus Corp
Priority to JP2014005596A priority Critical patent/JP2015135839A/ja
Priority to PCT/JP2015/050617 priority patent/WO2015108024A1/ja
Publication of JP2015135839A publication Critical patent/JP2015135839A/ja
Priority to US15/172,865 priority patent/US20160284754A1/en
Publication of JP2015135839A5 publication Critical patent/JP2015135839A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2014005596A 2014-01-16 2014-01-16 半導体装置、固体撮像装置、および撮像装置 Pending JP2015135839A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014005596A JP2015135839A (ja) 2014-01-16 2014-01-16 半導体装置、固体撮像装置、および撮像装置
PCT/JP2015/050617 WO2015108024A1 (ja) 2014-01-16 2015-01-13 半導体装置、固体撮像装置、および撮像装置
US15/172,865 US20160284754A1 (en) 2014-01-16 2016-06-03 Semiconductor device, solid-state imaging device, and imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014005596A JP2015135839A (ja) 2014-01-16 2014-01-16 半導体装置、固体撮像装置、および撮像装置

Publications (2)

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JP2015135839A true JP2015135839A (ja) 2015-07-27
JP2015135839A5 JP2015135839A5 (cg-RX-API-DMAC7.html) 2017-02-16

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JP2014005596A Pending JP2015135839A (ja) 2014-01-16 2014-01-16 半導体装置、固体撮像装置、および撮像装置

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Country Link
US (1) US20160284754A1 (cg-RX-API-DMAC7.html)
JP (1) JP2015135839A (cg-RX-API-DMAC7.html)
WO (1) WO2015108024A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017130660A (ja) * 2016-01-19 2017-07-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． Ｔｓｖ構造体を有した多重積層素子
JP2018060879A (ja) * 2016-10-04 2018-04-12 ラピスセミコンダクタ株式会社 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5966048B1 (ja) * 2015-04-09 2016-08-10 株式会社フジクラ 撮像モジュール及び内視鏡
KR102725785B1 (ko) * 2020-08-27 2024-11-04 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339057A (ja) * 2000-05-30 2001-12-07 Mitsumasa Koyanagi ３次元画像処理装置の製造方法
JP2002299595A (ja) * 2001-04-03 2002-10-11 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007103656A (ja) * 2005-10-04 2007-04-19 Denso Corp 半導体装置およびその製造方法
JP2010514177A (ja) * 2006-12-20 2010-04-30 ウードゥヴェ セミコンダクターズ 高集積密度画像センサの製造プロセス
JP2011151375A (ja) * 2009-12-25 2011-08-04 Sony Corp 半導体装置とその製造方法、及び電子機器
JP2011238951A (ja) * 2011-07-08 2011-11-24 Renesas Electronics Corp 半導体装置およびその製造方法
JP2012033878A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置および固体撮像装置の製造方法
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP2013168623A (ja) * 2012-01-17 2013-08-29 Olympus Corp 固体撮像装置、撮像装置および固体撮像装置の製造方法
JP2013182923A (ja) * 2012-02-29 2013-09-12 Canon Inc 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2013182941A (ja) * 2012-02-29 2013-09-12 Canon Inc 固体撮像装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4979154B2 (ja) * 2000-06-07 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339057A (ja) * 2000-05-30 2001-12-07 Mitsumasa Koyanagi ３次元画像処理装置の製造方法
JP2002299595A (ja) * 2001-04-03 2002-10-11 Matsushita Electric Ind Co Ltd 固体撮像装置およびその製造方法
JP2007103656A (ja) * 2005-10-04 2007-04-19 Denso Corp 半導体装置およびその製造方法
JP2010514177A (ja) * 2006-12-20 2010-04-30 ウードゥヴェ セミコンダクターズ 高集積密度画像センサの製造プロセス
JP2011151375A (ja) * 2009-12-25 2011-08-04 Sony Corp 半導体装置とその製造方法、及び電子機器
JP2012033878A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置および固体撮像装置の製造方法
JP2012033894A (ja) * 2010-06-30 2012-02-16 Canon Inc 固体撮像装置
JP2011238951A (ja) * 2011-07-08 2011-11-24 Renesas Electronics Corp 半導体装置およびその製造方法
JP2013168623A (ja) * 2012-01-17 2013-08-29 Olympus Corp 固体撮像装置、撮像装置および固体撮像装置の製造方法
JP2013182923A (ja) * 2012-02-29 2013-09-12 Canon Inc 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2013182941A (ja) * 2012-02-29 2013-09-12 Canon Inc 固体撮像装置およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017130660A (ja) * 2016-01-19 2017-07-27 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． Ｔｓｖ構造体を有した多重積層素子
JP2018060879A (ja) * 2016-10-04 2018-04-12 ラピスセミコンダクタ株式会社 半導体装置

Also Published As

Publication number Publication date
WO2015108024A1 (ja) 2015-07-23
US20160284754A1 (en) 2016-09-29

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