JP2015129830A5 - - Google Patents
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- Publication number
- JP2015129830A5 JP2015129830A5 JP2014000857A JP2014000857A JP2015129830A5 JP 2015129830 A5 JP2015129830 A5 JP 2015129830A5 JP 2014000857 A JP2014000857 A JP 2014000857A JP 2014000857 A JP2014000857 A JP 2014000857A JP 2015129830 A5 JP2015129830 A5 JP 2015129830A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- insulating layer
- laminate
- barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 45
- 239000011347 resin Substances 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014000857A JP6294670B2 (ja) | 2014-01-07 | 2014-01-07 | 表示装置及び表示装置の製造方法 |
| US14/585,603 US9666428B2 (en) | 2014-01-07 | 2014-12-30 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014000857A JP6294670B2 (ja) | 2014-01-07 | 2014-01-07 | 表示装置及び表示装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015129830A JP2015129830A (ja) | 2015-07-16 |
| JP2015129830A5 true JP2015129830A5 (enExample) | 2017-02-09 |
| JP6294670B2 JP6294670B2 (ja) | 2018-03-14 |
Family
ID=53495792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014000857A Expired - Fee Related JP6294670B2 (ja) | 2014-01-07 | 2014-01-07 | 表示装置及び表示装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9666428B2 (enExample) |
| JP (1) | JP6294670B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6486819B2 (ja) * | 2015-12-25 | 2019-03-20 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN205900543U (zh) * | 2016-05-18 | 2017-01-18 | 武汉华星光电技术有限公司 | 一种oled显示面板 |
| JP6883275B2 (ja) * | 2016-12-19 | 2021-06-09 | 大日本印刷株式会社 | 表示装置形成用基板、表示装置および表示装置の製造方法 |
| US11075347B2 (en) * | 2018-10-22 | 2021-07-27 | Lg Display Co., Ltd. | Flexible display device |
| KR102030323B1 (ko) * | 2018-11-23 | 2019-10-10 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08248368A (ja) * | 1995-03-09 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 液晶光学素子の製造方法と光導波路用薄型液晶光学素子および導波型光デバイス |
| US6166557A (en) | 1996-10-31 | 2000-12-26 | Texas Instruments Incorporated | Process of selecting dies for testing on a wafer |
| US7230447B2 (en) | 2003-10-31 | 2007-06-12 | Texas Instruments Incorporated | Fault tolerant selection of die on wafer |
| US7362093B2 (en) | 1995-10-31 | 2008-04-22 | Texas Instruments Incorporated | IC selectively connecting logic and bypass conductors between opposing pads |
| US5760643A (en) | 1995-10-31 | 1998-06-02 | Texas Instruments Incorporated | Integrated circuit die with selective pad-to-pad bypass of internal circuitry |
| US5969538A (en) | 1996-10-31 | 1999-10-19 | Texas Instruments Incorporated | Semiconductor wafer with interconnect between dies for testing and a process of testing |
| US6987382B1 (en) | 1995-10-31 | 2006-01-17 | Texas Instruments Incorporated | System with functional and selector circuits connected by mode lead |
| US5994912A (en) | 1995-10-31 | 1999-11-30 | Texas Instruments Incorporated | Fault tolerant selection of die on wafer |
| US6046600A (en) | 1995-10-31 | 2000-04-04 | Texas Instruments Incorporated | Process of testing integrated circuit dies on a wafer |
| US5712206A (en) * | 1996-03-20 | 1998-01-27 | Vanguard International Semiconductor Corporation | Method of forming moisture barrier layers for integrated circuit applications |
| US6326801B1 (en) | 1996-10-31 | 2001-12-04 | Texas Instruments Incorporated | Wafer of semiconductor material with dies, probe areas and leads |
| US20020024356A1 (en) | 1999-10-12 | 2002-02-28 | Whetsel Lee D. | Method and apparatus for parallel die testing on wafer |
| JP4912835B2 (ja) * | 2002-11-01 | 2012-04-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2004040649A1 (ja) | 2002-11-01 | 2004-05-13 | Semiconductor Energy Laboratory Co., Ltd. | 半導体装置および半導体装置の作製方法 |
| JP4218338B2 (ja) * | 2002-12-24 | 2009-02-04 | セイコーエプソン株式会社 | 液晶表示装置の製造方法 |
| US7229900B2 (en) | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
| JP4974452B2 (ja) * | 2003-10-28 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN101730938B (zh) * | 2007-07-04 | 2012-10-10 | 皇家飞利浦电子股份有限公司 | 在衬底上形成图案化层的方法 |
| US7678668B2 (en) * | 2007-07-04 | 2010-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of SOI substrate and manufacturing method of semiconductor device |
| US20100237362A1 (en) * | 2007-10-23 | 2010-09-23 | Sharp Kabushiki Kaisha | Display device and production method thereof |
| JP2010032768A (ja) * | 2008-07-29 | 2010-02-12 | Hitachi Displays Ltd | 表示装置およびその製造方法 |
| KR101108166B1 (ko) * | 2010-02-09 | 2012-01-31 | 삼성모바일디스플레이주식회사 | 실리콘 산화물막과 실리콘 리치 실리콘 질화물막을 포함하는 배리어층을 포함하는 유기 발광 장치 |
| JP2013251255A (ja) * | 2012-05-04 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
| KR102361966B1 (ko) * | 2013-12-02 | 2022-02-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
-
2014
- 2014-01-07 JP JP2014000857A patent/JP6294670B2/ja not_active Expired - Fee Related
- 2014-12-30 US US14/585,603 patent/US9666428B2/en active Active
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