JP2015128134A - 硬化性組成物、膜、膜の製造方法 - Google Patents
硬化性組成物、膜、膜の製造方法 Download PDFInfo
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- JP2015128134A JP2015128134A JP2014162297A JP2014162297A JP2015128134A JP 2015128134 A JP2015128134 A JP 2015128134A JP 2014162297 A JP2014162297 A JP 2014162297A JP 2014162297 A JP2014162297 A JP 2014162297A JP 2015128134 A JP2015128134 A JP 2015128134A
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- mold
- release agent
- film
- ether
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- QUPCNWFFTANZPX-UHFFFAOYSA-M paramenthane hydroperoxide Chemical compound [O-]O.CC(C)C1CCC(C)CC1 QUPCNWFFTANZPX-UHFFFAOYSA-M 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
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- 150000004714 phosphonium salts Chemical class 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- OXWFVYDECNDRMT-UHFFFAOYSA-M trifluoromethanesulfonate;tris(4-methoxyphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 OXWFVYDECNDRMT-UHFFFAOYSA-M 0.000 description 1
- 125000001889 triflyl group Chemical group FC(F)(F)S(*)(=O)=O 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- WUKMCKCDYKBLBG-UHFFFAOYSA-N tris(4-methoxyphenyl)sulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 WUKMCKCDYKBLBG-UHFFFAOYSA-N 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- 230000003313 weakening effect Effects 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- INRGAWUQFOBNKL-UHFFFAOYSA-N {4-[(Vinyloxy)methyl]cyclohexyl}methanol Chemical compound OCC1CCC(COC=C)CC1 INRGAWUQFOBNKL-UHFFFAOYSA-N 0.000 description 1
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
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- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
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- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
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- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
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- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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Abstract
Description
前記内添型離型剤が、前記硬化性組成物の気液界面に偏在しないことを特徴とする。
本発明の硬化性組成物は、少なくとも下記(1A)乃至(1C)を含む混合物である。
(1A)重合開始剤
(1B)重合性化合物
(1C)内添型離型剤
重合開始剤としては、光重合開始剤及び熱重合開始剤が含まれる。
重合性化合物としては、ラジカル重合性化合物及びカチオン重合性化合物が含まれる。
内添型離型剤は、親水性官能基を有する化合物である。親水性官能基としては、炭素数2乃至3のポリオキシアルキレン基、ヒドロキシル基、カルボキシル基、アミノ基、ピリジル基、チオール基、シラノール基等が挙げられる。本発明において、親水性官能基は、内添型離型剤となる化合物中に複数含まれていてもよい。本発明において、内添型離型剤に含まれる親水性官能基は、一種類であってもよいし、二種類以上であってもよい。
R−(OR’)n−X (A)
−5%≦{(γ1−γ2)/γ1}≦5% (1)
γ1cosθ≧30mJ/m2 (2)
増感剤を含ませることにより、重合反応促進や反応転化率が向上する傾向がある。増感剤としては、水素供与体及び増感色素が含まれる。
開始剤、重合性化合物、内添型離型剤を混合・溶解させることによって硬化性組成物を調製する際には所定の温度条件下で行う。作業性等の観点から、好ましくは、0℃乃至100℃の範囲で行い、より好ましくは、10℃乃至50℃である。
本発明の硬化性組成物の粘度は、25℃での粘度が、好ましくは、1mPa・s乃至100mPa・sであり、より好ましくは、5mPa・s乃至50mPa・sであり、さらに好ましくは、6mPa・s乃至20mPa・sである。硬化性組成物の粘度が100mPa・sより高いと、ナノインプリントリソグラフィーに用いた場合、硬化性組成物がモールドに接触する際にモールド上の微細パターンのうち凹部に組成物が充填するのに長い時間が必要となったり、充填不良によるパターン欠陥が生じる場合がある。一方、粘度が1mPa・sより低いと、硬化性組成物を塗布する際に塗りムラを生じたり、硬化性組成物をモールドに接触する際に、モールドの端部から光硬化性組成物が流出する場合がある。
本発明の硬化性組成物の表面張力は、25℃での表面張力が、好ましくは、5mN/m乃至70mN/mであり、より好ましくは、7mN/m乃至35mN/mであり、さらに好ましくは、10mN/m乃至35mN/m、特に好ましくは、30mN/m乃至35mN/m、最も好ましくは、32mN/m乃至35mN/mである。ここで表面張力が5mN/mより低いと、硬化性組成物をモールドに接触する際にモールド上の微細パターンのうち凹部に組成物が充填するのに長い時間が必要となる。一方、表面張力が70mN/mより高いと、表面平滑性が低くなる。
本発明の硬化性組成物は、できる限りパーティクル等の不純物を取り除くのが望ましい。例えば、硬化性組成物に混入したパーティクルによって光硬化物に不用意に凹凸が生じてパターンの欠陥が発生するのを防止するためにパーティクル等の不純物を取り除くのが望ましい。具体的には、硬化性組成物に含まれる各成分を混合した後、例えば、孔径0.001μm乃至5.0μmのフィルタで濾過することが好ましい。フィルタを用いた濾過を行う際には、多段階で行ったり、多数回繰り返したりすることがさらに好ましい。また、濾過した液を再度濾過してもよい。濾過に使用するフィルタとしては、ポリエチレン樹脂製、ポリプロピレン樹脂製、フッ素樹脂製、ナイロン樹脂製等のフィルタを使用することができるが、特に限定されるものではない。
次に、本発明の膜(硬化膜)の製造方法について説明する。尚、本発明でいう膜の形成方法には、インプリント方法が含まれている。インプリント方法には、光により硬化する光インプリント方法、及び熱により硬化する熱インプリント方法が含まれる。
[1]配置工程(塗布工程、図1(a))
[2]型接触工程(図1(b1)、(b2))
[3]硬化工程(図1(c))
[4]離型工程(図1(d))
[5]残膜除去工程(図1(e))
[6]基板加工工程(図1(f))
まず硬化性組成物1を基板2上に配置(塗布)して塗布膜を形成する(図1(a))。
ここでいう硬化性組成物とは、本発明の硬化性組成物である。
次に、前工程(配置工程)で形成された硬化性組成物1からなる塗布膜にモールドを接触させる工程(型接触工程、図1(b1)、図1(b2))を行う。尚、モールド3は印章と見立てることができるので、この工程は、押印工程とも呼ばれる。本工程で、硬化性組成物1(被形状転写層)にモールド3を接触させる(図1(b1))と、モールド3上に形成された微細パターンの凹部に塗布膜(の一部)11が充填される(図1(b2))。
(i)型接触工程にて硬化性組成物1(被形状転写層)とモールド3とが接触する前(図1(b1))の段階で雰囲気中に気体として存在するガス
(ii)硬化性組成物1とモールド3とが接触して、モールド3上に形成された微細パターンの凹部、及びモールドと基板との間隙に塗布膜(の一部)11と一緒に雰囲気中のガスが充填されたときに、充填時の圧力により発生する毛細管圧力で凝縮して液化するガス
・1,1,1,3,3−ペンタフルオロプロパン(23℃での蒸気圧0.14MPa、沸点15℃)
・トリクロロフルオロメタン(23℃での蒸気圧0.1056MPa、沸点24℃)
・ペンタフルオロエチルメチルエーテル
次に、塗布膜を硬化する。具体的には、モールド3を介して塗布膜11に光を照射する(図1(c))、又は塗布膜11を加熱する。硬化工程において、塗布膜11を、光又は熱によって硬化させることで硬化膜12を形成する。
次に、硬化膜12からモールド3を離し、基板2上に所定のパターン形状を有する硬化膜を形成する工程(離型工程、図1(d))を行う。この工程(離型工程)は、硬化膜12からモールド3を剥離する工程であり、前の工程(硬化工程)において、モールド3上に形成された微細パターンの反転パターンが、硬化膜12のパターンとして得られる。尚、内添型離型剤は、モールドが硬化性組成物と接触してから硬化膜とモールドとを引き離すまでの間に、硬化性組成物又は硬化膜と、モールドとが接触する界面に吸着するものであってもよい。
上記離型工程を行ったときに得られる硬化膜は、特定のパターン形状を有するものの、このパターン形状が形成される領域以外の領域においても膜の一部が残膜として存在することがある。そこで上記パターン形状のうち、硬化物を除去すべき領域について残存する硬化膜(残膜)を除去する工程(残膜除去工程、図1(e))を行う。
本発明の製造方法によって得られる所望の凹凸パターン形状を有する硬化膜12は、例えば、LSI、システムLSI、DRAM、SDRAM、RDRAM、D−RDRAM等の半導体素子に代表される電子部品に含まれる層間絶縁膜用膜として利用可能である。一方、この硬化膜12は、半導体素子製造時におけるレジスト膜として利用することもできる。
<A1>IRGACURE651(BASF製)
<A2>IRGACURE369(チバ・ジャパン製)
<A3>Lucirin TPO(BASF製)
(B)重合性化合物
<B1>イソボルニルアクリレート(共栄社化学製、商品名:IB−XA)
<B2>ベンジルアクリレート(大阪有機化学工業製、商品名:V#160)
<B3>ネオペンチルグリコールジアクリレート(共栄社化学製、商品名:NP−A)
(C)内添型離型剤
<C1>ポリオキシエチレンステアリルエーテル(EO5モル付加物)(青木油脂工業製、商品名:BLAUNON SR−705)
<C2>ポリオキシエチレンステアリルエーテル(EO30モル付加物)(青木油脂工業製、商品名:BLAUNON SR−730)
<C3>ポリオキシエチレンステアリルエーテル(EO15モル付加物)(青木油脂工業製、商品名:BLAUNON SR−715)
<C4>ペンタデカエチレングリコールモノ1H,1H,2H,2H−パーフルオロオクチルエーテル(F(CF2)6CH2CH2(OCH2CH2)15OH)(DIC製)
<C5>ポリオキシエチレンステアリルエーテル(EO50モル付加物)(青木油脂工業製、商品名:BLAUNON SR−750)
<C6>ポリオキシエチレンポリオキシプロピレンステアリルエーテル(青木油脂工業製、商品名:BLAUNON SA−50/50 1000R、EO/PO=50/50)
<C7>ポリオキシエチレンポリオキシプロピレンステアリルエーテル(青木油脂工業製、商品名:BLAUNON SA−30/70 2000R、EO/PO=30/70)
<C8>ポリオキシエチレンメチルエーテルPluriol A760E(BASF製、Pluriol A760E)
(E)増感剤
<E1>4,4’−ビス(ジエチルアミノ)ベンゾフェノン(東京化成工業製、純度98%以上)
まず以下に列挙する試薬を混合した。
重合開始剤(A1):3部
重合性化合物(B1):9部
重合性化合物(B2):38部
重合性化合物(B3):47部
内添型離型剤(C1):0.5部
白金プレートを用いたプレート法により、25℃における硬化性組成物の表面張力を測定した。尚、測定は、自動表面張力計DY−300(協和界面化学製)を用いて、測定回数5回、白金プレートのプリウェット浸漬距離0.35mmの条件で行った。ここで、1回目の測定値を除いて、2回目から5回目の測定値の平均値を表面張力とした。
円錐平板方式回転型粘度計RE−85L(東機産業製)を用いて、25℃における硬化性組成物の粘度を測定した。
自動静的接触角測定装置Dropmaster300(協和界面化学製)を用いて、硬化性組成物と基板との接触角を測定した。接触角は、硬化性組成物を基板に滴下してから10秒後の値である。
石英基板を使用した。尚、この基板の表面は、UV照射装置(UVE−110−1H)を用いて30分間、UV/オゾン洗浄されている。
厚さ60nmの密着促進層を表面に形成したシリコンウエハを使用した。
(γ1−γ2)/γ1=(33.16−33.37)/33.16=−0.6%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C2)を1.6部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D2)を得た。
(γ1−γ2)/γ1=(33.16−33.37)/33.16=−0.6%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C3)を0.9部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D3)を得た。
(γ1−γ2)/γ1=(34.42−33.37)/34.42=3.1%
実施例3において、重合開始剤(A1)を3部投入する代わりに、重合開始剤(A2)を3部投入したこと以外は、実施例3と同様の方法により、硬化性組成物(D4)を得た。
(γ1−γ2)/γ1=(32.66−32.71)/32.66=−0.2%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C4)を1.1部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D5)を得た。
(γ1−γ2)/γ1=(27.7−33.37)/27.7=−20.5%
実施例1において、内添型離型剤を投入しなかったこと以外は、実施例1と同様の方法により、硬化性組成物(D6)を得た。
実施例4において、内添型離型剤として、(C3)を0.9部投入する代わりに、(C4)を1.1部投入したこと以外は、実施例4と同様の方法により、硬化性組成物(D7)を得た。
(γ1−γ2)/γ1=(29,08−32.71)/29.08=−12.5%
実施例4において、内添型離型剤を投入しなかったこと以外は、実施例4と同様の方法により、硬化性組成物(D8)を得た。
実施例2において、重合開始剤(A1)を3部投入する代わりに、重合開始剤(A3)3部及び増感剤(E1)0.5部を投入したこと以外は、実施例2と同様の方法により、硬化性組成物(D9)を得た。
(γ1−γ2)/γ1=(33.27−32.66)/33.27=1.8%
実施例5において、内添型離型剤を投入しなかったこと以外は、実施例9と同様の方法により、硬化性組成物(D10)を得た。
実施例1で製造した硬化性組成物(D1)を用いて、図1に示される方法により膜(硬化膜)を作製した。また本実施例(実施例6)においては、配置工程、型接触工程、硬化工程及び離型工程は、全てヘリウム雰囲気下で行った。
インクジェット法により、シリコンウェハ(基板2)の上に、硬化性組成物1の液滴(液滴1個当たり11pL)を、合計1440滴滴下した(図1(a))。尚、基板2は、厚さが300mmであって、その表面に厚さ3nmの密着促進層(不図示)が形成されている。また各液滴をそれぞれ滴下する際には、縦26mm、横33mmの領域に各液滴の間隔がほぼ均等になるように滴下した。
次に、基板2の上に設けられている硬化性組成物1に対して、28nmライン・アンド・スペース(L/S)パターンが形成され、表面に内添型離型剤処理がされていない石英モールド3(縦26mm、横33mm)を接触させた(図1(b1)乃至(b2))。
次に、硬化性組成物1に石英モールド3を接触させてから30秒後に、200W水銀キセノンランプを備えたUV光源を用いて、石英モールド3越しにUV光4を硬化性組成物11に照射して、硬化膜12を作製した(図1(c))。尚、UV光4の光源(UV光源)として、EXECURE 3000(HOYA CANDEO OPTRONICS CORPORATION製)を用いた。また、UV光4を照射する際には、UV光源と石英モールド3との間に、波長313±5nmを選択的に透過する干渉フィルタ(VPF−50C−10−25−31300、シグマ光機製)を配した。さらに石英モールド3の直下におけるUV光4の照度は、波長313nmにおいて40mW/cm2であった。以上の条件下で、UV光の照射を0.75秒(露光量:30mJ/cm2)行った。
次に、石英モールド3を、0.5mm/sの条件で引き上げて硬化膜12から石英モールド3を離して、基板2の上に所定のパターン形状を有する硬化膜12を製造した。尚、硬化膜12からモールドを引き離すために必要な力は、74Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D2)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、79Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D3)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、84Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D4)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、79Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D5)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本比較例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、63Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D6)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本比較例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、95Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D7)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本比較例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、74Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D8)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本比較例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、95Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D9)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、69Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D10)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本比較例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は測定していないが、内添型離型剤を含まない硬化膜を用いた比較例7及び比較例9の結果から、95N程度と推定できる。
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C5)を2.5部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D11)を得た。
(γ1−γ2)/γ1=(32.96−33.37)/32.96=−1.2%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C6)を1.0部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D12)を得た。
(γ1−γ2)/γ1=(33.03−33.37)/33.03=−1.0%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C7)を2.0部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D13)を得た。
(γ1−γ2)/γ1=(33.31−33.37)/33.31=−0.1%
実施例1において、内添型離型剤として、(C1)を0.5部投入する代わりに、(C8)を0.8部投入したこと以外は、実施例1と同様の方法により、硬化性組成物(D14)を得た。
(γ1−γ2)/γ1=(32.97−33.37)/33.31=−1.2%
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D11)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、63Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D12)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、65Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D13)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、62Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D14)を用いたこと以外は、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、62Nだった。
実施例6において、硬化性組成物(D1)の代わりに硬化性組成物(D9)を用いた。また実施例6において、型接触工程の雰囲気として、ヘリウムの代わりにヘリウムと凝縮性ガスである1,1,1,3,3−ペンタフルオロプロパンとを、流量比1:4で混合した混合ガスを用いた。さらに、硬化工程においてUV光の照射時間を0.75秒から5秒に変更した。これらを除いては、実施例6と同様の方法により、硬化膜を製造した。尚、本実施例では、充填工程において、硬化性組成物(D9)をヘリウム雰囲気下で充填した実施例10よりも速やかに充填される様子が観察された。また、離型工程において、硬化膜12から石英モールド3を引き離すために必要な力は、59Nだった。
Claims (15)
- 重合開始剤と、重合性化合物と、親水性官能基を有する内添型離型剤と、を含有する硬化性組成物であって、
前記内添型離型剤が、前記硬化性組成物の気液界面に偏在しないことを特徴とする、硬化性組成物。 - 重合開始剤と、重合性化合物と、親水性官能基を有する内添型離型剤と、を含有する硬化性組成物であって、
下記一般式(1)が満たされることを特徴とする、硬化性組成物。
−5%≦{(γ1−γ2)/γ1}≦5% (1)
(式(1)において、γ1は、硬化性組成物の25℃における表面張力を表し、γ2は、内添型離型剤を含まない以外は硬化性組成物と同じ組成である評価用硬化性組成物の25℃における表面張力を表す。) - 下記一般式(1)が満たされることを特徴とする、請求項1に記載の硬化性組成物。
−5%≦{(γ1−γ2)/γ1}≦5% (1)
(式(1)において、γ1は、硬化性組成物の25℃における表面張力を表し、γ2は、内添型離型剤を含まない以外は硬化性組成物と同じ組成である評価用硬化性組成物の25℃における表面張力を表す。) - さらに下記一般式(2)が満たされることを特徴とする、請求項1乃至3のいずれか一項に記載の硬化性組成物。
γ1cosθ≧30mJ/m2 (2)
(式(2)において、γ1は、硬化性組成物の25℃における表面張力を表し、θは、モールドと硬化性組成物との接触角を表す。) - 前記内添型離型剤が、下記一般式(A)に示される化合物であることを特徴とする、請求項1乃至4のいずれか一項に記載の硬化性組成物。
R−(OR’)n−X (A)
(式(A)において、Rは、アルキル基を表し、OR’は、オキシアルキレン基を表し、Xは、ヒドロキシル基又はオキシアルキル基を表す。nは、1乃至100の整数を表す。) - 前記重合開始剤が、光重合開始剤であることを特徴とする、請求項1乃至5のいずれか一項に記載の硬化性組成物。
- 硬化性組成物を基板上に配置する配置工程と、
親水性表面を有するモールドと硬化性組成物とを接触させる型接触工程と、
硬化性組成物を光又は熱により硬化して硬化膜を作製する硬化工程と、
硬化膜から前記モールドを引き離す離型工程と、を有し、
所定のパターン形状を有し、前記基板上に配される膜の製造方法であって、
前記硬化性組成物が、重合開始剤と、重合性化合物と、親水性官能基を有する内添型離型剤と、を含み、
前記配置工程において、前記内添型離型剤が、前記硬化性組成物の気液界面に偏在しないことを特徴とする、膜の製造方法。 - 前記硬化性組成物が、下記一般式(1)が満たされることを特徴とする、請求項7に記載の硬化性組成物の製造方法。
−5%≦{(γ1−γ2)/γ1}≦5% (1)
(式(1)において、γ1は、硬化性組成物の25℃における表面張力を表し、γ2は、内添型離型剤を含まない以外は硬化性組成物と同じ組成である評価用硬化性組成物の25℃における表面張力を表す。) - さらに下記一般式(2)が満たされることを特徴とする、請求項7又は8に記載の膜の製造方法。
γ1cosθ≧30mJ/m2 (2)
(式(2)において、γ1は、硬化性組成物の25℃における表面張力を表し、θは、モールドと硬化性組成物との接触角を表す。) - 前記内添型離型剤が、モールドが硬化性組成物と接触してから硬化膜とモールドとを引き離すまでの間に、硬化性組成物又は硬化膜と、モールドとが接触する界面に吸着することを特徴とする、請求項7乃至9のいずれか一項に記載の膜の製造方法。
- 型接触工程が、凝縮性ガスを含む雰囲気中で行われることを特徴とする、請求項7乃至10のいずれか一項に記載の膜の製造方法。
- 凝縮性ガスが、1,1,1,3,3−ペンタフルオロプロパンであることを特徴とする、請求項11に記載の膜の製造方法。
- 凝縮性ガスを含む雰囲気が、ヘリウムと凝縮性ガスとの混合気体であることを特徴とする、請求項11に記載の膜の製造方法。
- 請求項7乃至13のいずれか一項に記載の膜の製造方法により得られた膜のパターン形状に基づいてエッチング又はイオン注入を行い、前記パターン形状に基づいて前記基板に回路構造を形成することを特徴とする、回路付基板の製造方法。
- 基板と、前記基板の上に配置される膜と、を有し、
前記膜が、請求項7乃至13のいずれか一項に記載の膜の製造方法によって製造される硬化膜であることを特徴とする、光学部材。
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US20210265160A1 (en) * | 2017-03-08 | 2021-08-26 | Canon Kabushiki Kaisha | Method for fabricating pattern of cured product and methods for manufacturing optical component, circuit board and quartz mold replica as well as coating material for imprint pretreatment and cured product thereof |
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JPWO2019188882A1 (ja) * | 2018-03-27 | 2021-02-25 | 富士フイルム株式会社 | インプリント用硬化性組成物、離型剤、硬化物、パターン形成方法およびリソグラフィー方法 |
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JP6328001B2 (ja) | 2018-05-23 |
US20160160003A1 (en) | 2016-06-09 |
CN105492468A (zh) | 2016-04-13 |
EP3010943A1 (en) | 2016-04-27 |
TW201512266A (zh) | 2015-04-01 |
KR101787924B1 (ko) | 2017-10-18 |
KR20160046853A (ko) | 2016-04-29 |
US10208183B2 (en) | 2019-02-19 |
WO2015030258A1 (en) | 2015-03-05 |
EP3010943A4 (en) | 2017-04-26 |
EP3010943B1 (en) | 2024-04-03 |
TWI565745B (zh) | 2017-01-11 |
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