JP2015124145A5 - - Google Patents

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JP2015124145A5
JP2015124145A5 JP2013272402A JP2013272402A JP2015124145A5 JP 2015124145 A5 JP2015124145 A5 JP 2015124145A5 JP 2013272402 A JP2013272402 A JP 2013272402A JP 2013272402 A JP2013272402 A JP 2013272402A JP 2015124145 A5 JP2015124145 A5 JP 2015124145A5
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Japan
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oxide
atoms
ratio
powder
indium
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JP2013272402A
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Japanese (ja)
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JP2015124145A (ja
JP6064895B2 (ja
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Publication of JP2015124145A5 publication Critical patent/JP2015124145A5/ja
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JP2013272402A 2013-12-27 2013-12-27 酸化インジウム系酸化物焼結体およびその製造方法 Expired - Fee Related JP6064895B2 (ja)

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JP2013272402A JP6064895B2 (ja) 2013-12-27 2013-12-27 酸化インジウム系酸化物焼結体およびその製造方法

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Application Number Priority Date Filing Date Title
JP2013272402A JP6064895B2 (ja) 2013-12-27 2013-12-27 酸化インジウム系酸化物焼結体およびその製造方法

Publications (3)

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JP2015124145A JP2015124145A (ja) 2015-07-06
JP2015124145A5 true JP2015124145A5 (cg-RX-API-DMAC7.html) 2016-01-21
JP6064895B2 JP6064895B2 (ja) 2017-01-25

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JP2013272402A Expired - Fee Related JP6064895B2 (ja) 2013-12-27 2013-12-27 酸化インジウム系酸化物焼結体およびその製造方法

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JP (1) JP6064895B2 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016017546A1 (ja) * 2014-08-01 2016-02-04 住友金属鉱山株式会社 酸化インジウム系酸化物焼結体とその製造方法
KR102380806B1 (ko) * 2017-02-22 2022-03-30 이데미쓰 고산 가부시키가이샤 산화물 반도체막, 박막 트랜지스터, 산화물 소결체 및 스퍼터링 타깃
CN114180938A (zh) * 2021-12-15 2022-03-15 先导薄膜材料（广东）有限公司 一种氧化铟铈钛钽粉体及其制备方法
CN116813310B (zh) * 2023-06-01 2024-06-07 先导薄膜材料（广东）有限公司 一种稀土元素掺杂氧化铟锡镓靶材及其制备方法
CN117185781B (zh) * 2023-09-11 2025-10-17 先导薄膜材料（广东）有限公司 一种氧化铟镓铝粉体、靶材及粉体、靶材的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2471972B1 (en) * 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
JP5023745B2 (ja) * 2007-03-12 2012-09-12 住友金属鉱山株式会社 透明導電膜、この透明導電膜を用いた透明導電性基板、透明導電性フィルム、並びに近赤外線遮断フィルター、および、この透明導電膜の製造方法
US8440115B2 (en) * 2007-07-06 2013-05-14 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and production method therefor, target, and transparent conductive film and transparent conductive substrate obtained by using the same
KR20140041675A (ko) * 2011-07-06 2014-04-04 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟

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