JP2015122543A5 - - Google Patents
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- Publication number
- JP2015122543A5 JP2015122543A5 JP2015068517A JP2015068517A JP2015122543A5 JP 2015122543 A5 JP2015122543 A5 JP 2015122543A5 JP 2015068517 A JP2015068517 A JP 2015068517A JP 2015068517 A JP2015068517 A JP 2015068517A JP 2015122543 A5 JP2015122543 A5 JP 2015122543A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- insulating film
- semiconductor
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims description 42
- 238000002955 isolation Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- 238000000926 separation method Methods 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015068517A JP6029704B2 (ja) | 2015-03-30 | 2015-03-30 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015068517A JP6029704B2 (ja) | 2015-03-30 | 2015-03-30 | 半導体装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009213345A Division JP5729745B2 (ja) | 2009-09-15 | 2009-09-15 | 半導体装置およびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016201649A Division JP2017011311A (ja) | 2016-10-13 | 2016-10-13 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015122543A JP2015122543A (ja) | 2015-07-02 |
| JP2015122543A5 true JP2015122543A5 (enrdf_load_stackoverflow) | 2015-10-15 |
| JP6029704B2 JP6029704B2 (ja) | 2016-11-24 |
Family
ID=53533849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015068517A Active JP6029704B2 (ja) | 2015-03-30 | 2015-03-30 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6029704B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6653769B2 (ja) | 2016-12-14 | 2020-02-26 | 日立オートモティブシステムズ株式会社 | 負荷駆動装置 |
| JPWO2022153693A1 (enrdf_load_stackoverflow) | 2021-01-15 | 2022-07-21 | ||
| JP2023032332A (ja) | 2021-08-26 | 2023-03-09 | ローム株式会社 | 半導体装置 |
| CN118016663A (zh) * | 2024-02-21 | 2024-05-10 | 东南大学 | 基于n外延的碳化硅器件隔离结构、高低压集成器件及制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3382063B2 (ja) * | 1995-06-14 | 2003-03-04 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2002184854A (ja) * | 2000-12-12 | 2002-06-28 | Sony Corp | 半導体装置の製造方法 |
| JP2002280447A (ja) * | 2001-03-21 | 2002-09-27 | Sony Corp | 半導体装置の製造方法 |
| JP2003152071A (ja) * | 2001-11-13 | 2003-05-23 | Sony Corp | 素子形成領域の形成方法、半導体装置の製造方法、及び半導体装置 |
| US7825488B2 (en) * | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
| JP2005332959A (ja) * | 2004-05-19 | 2005-12-02 | Nippon Precision Circuits Inc | 相補型バイポーラ半導体装置及びその製造方法 |
| JP2006049828A (ja) * | 2004-07-05 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP2009032967A (ja) * | 2007-07-27 | 2009-02-12 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2009164460A (ja) * | 2008-01-09 | 2009-07-23 | Renesas Technology Corp | 半導体装置 |
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2015
- 2015-03-30 JP JP2015068517A patent/JP6029704B2/ja active Active