JP2015111665A - 波長変換型封止材組成物、波長変換型封止材層、および、それを用いた太陽電池モジュール - Google Patents
波長変換型封止材組成物、波長変換型封止材層、および、それを用いた太陽電池モジュール Download PDFInfo
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- JP2015111665A JP2015111665A JP2014221317A JP2014221317A JP2015111665A JP 2015111665 A JP2015111665 A JP 2015111665A JP 2014221317 A JP2014221317 A JP 2014221317A JP 2014221317 A JP2014221317 A JP 2014221317A JP 2015111665 A JP2015111665 A JP 2015111665A
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
Description
前記第1の有機物の極大発光波長λ1emと前記第2の有機物の極大励起波長λ2exとが下記式(式(1))の関係にあることを特徴とする。
[式(1)]
λ1em−60≦λ2ex(nm)
[式(2)]
λ2ex−λ1abs≧5(nm)
前記第1の有機物の極大発光波長λ1emと前記第2の有機物の極大励起波長λ2exとが下記式(式(1))の関係にあることを特徴とする。
[式(1)]
λ1em−60≦λ2ex(nm)
本発明の波長変換型封止材組成物は、紫外線を吸収して、吸収した光より長い波長の光に変換する第1の有機物と、第1の有機物よりも長い波長の光を吸収して、吸収した光より長い波長の光に変換する第2の有機物とを含む。
[式(1)]
λ1em−60≦λ2ex(nm)
[式(2)]
λ2ex−λ1abs≧5(nm)
前記第2の有機物の、前記波長変換型封止材中における重量部数P2、モル吸光係数ε2、および分子量Mw2の逆数の積で表される指標C2との比(式(3))が、
0.001≦C2/C1≦0.5であることを特徴としているが、0.002≦C2/C1≦0.5であってもよく、0.003≦C2/C1≦0.48であってもよく、0.004≦C2/C1≦0.48であってもよい。
[式(3)]
C2/C1=[(P2×ε2)/Mw2]/[(P1×ε1)/Mw1]
一方、本発明の波長変換型封止材層は、上記波長変換型封止材組成物を用いて形成されたことを特徴とする。
本発明の太陽電池モジュール1は、上記波長変換封止材層20および太陽電池セル30を含むことを特徴とする。一例として図1、2に簡易な模式図を示すが、本発明がこれらに限定されるものではない。また、表面保護層10、太陽電池セルの背面側にさらに封止材層40、バックシート50を適宜備えることもできる。また、これらの各層間に、上記太陽電池用封止材層の上記機能を損なわない限り、接着材層、粘着剤層などの他の層を適宜介在してもよい。また、上記背面用の封止材層として、適宜、本発明の波長変換型封止材層を用いてもよい。
実施例および比較例では、以下の蛍光化合物を用いた。
[化合物A]
4,7−ジフェニル−2−イソブチル−2H−ベンゾトリアゾール
[化合物B]
(1,10−フェナントロリン)トリス[4,4,4−トリフルオロ−1−(2−チエニル)−1,3−ブタンジオナト]ユーロピウム(III)
[化合物C]
4,7−ビス(4−t−ブチルフェニル)−2−イソブチル−2H−ベンゾトリアゾール
[化合物D]
4,7−ビス(4−イソブチルオキシフェニル)−2−イソブチル−2H−ベンゾトリアゾール
[化合物E]
4,7−ビス(4−t−ブチルフェニル)−2、1,3−ベンゾチアジアゾール
[化合物F]
4,7−ビス(4−イソブチルオキシフェニル)−2、1,3−ベンゾチアジアゾール
マトリックス樹脂:スミテートKA30、エチレンビニルアセテート(EVA)樹脂(住友化学社製)
過酸化物:パーブチルE、t−ブチルパーオキシ−2−エチルへキシルモノカルボネート(日油社製)
架橋助剤:TAIC、トリアリルイソシアヌレート(日本化成社製)
酸化防止剤:BHT、ジブチルヒドロキシトルエン(東京化成社製)
光安定化剤:Tinuvin144、ビス(1,2,2,6,6−ペンタメチル−4−ピペリジル)[[3,5−ビス(1,1−ジメチルエチル)−4−ヒドロキシフェニル]メチル]ブチルマロネート(BASF社製)
シランカップリング剤:KBM503、3−メタクリロキシプロピルトリメトキシシラン(信越シリコーン社製)。
発光性化合物の分子量をGC/APCI−TOF MSスペクトル測定にて評価した。
各実施例・比較例において、各化合物を表の配合に基づき、各封止材層(封止シート)を下記方法によって製造した。
[封止シートの樹脂組成物]
各実施例・比較例において、上記EVA樹脂100重量部および各化合物をはかりとり、ドライブレンドした後に、単軸押し出し機を用いて溶融混練することで、エチレン共重合体組成物のペレットを得た。上記ペレットからプレス成型機を用いて封止材層樹脂シート(厚さ:約650μm)を作製した。
極大吸収波長の測定は、紫外可視分光光度計(日本分光株式会社製、V−560、波長範囲300〜800nm)を用いて行った。吸収スペクトルのうちで吸光度の極大値を示す波長を極大吸収波長とした。
極大励起波長・最大発光波長の測定は、蛍光分光光度計(日立ハイテクノロジーズ社製、F−4500)を用いて行い、(励起−発光)3次元測定において発光強度が最大となる発光波長を最大発光波長、最大発光波長の励起スペクトルのうちで発光強度の極大値を示す波長を極大励起波長とした。
発光量子収率の測定は、MCPD(大塚電子社製、MCPD−9800、QE1100L、ソフトウェアVer.1.10.10.1)を用いて行い、極大励起波長で励起した時の発光量子収率を測定した。
上記で得られた封止シートを20cmX20cmに裁断し、保護ガラスとしての強化ガラス(旭硝子社製:ソライト)、封止シート、太陽電池セル(Qセル社製:Q6LTT3−G2−200/1700−A、結晶シリコン型)、裏面用封止シート(400μm厚EVAシート)、バックシートとしてPETフィルムを載せ、真空ラミネーター(株式会社エヌ・ピー・シー:LM−50x50−S)を用いて、140℃、真空5分、加圧10分の条件でラミネートし、太陽電池モジュールを作製した。この太陽電池モジュールの分光感度を分光感度測定装置(分光計器社製、CEP−25RR)を用いて測定し、分光感度測定から算出されたJsc値を得た。なお、Jsc値とは、分光感度測定装置によるサンプル測定から得られる分光感度スペクトルと基準太陽光の演算により算出される短絡電流密度をいう。
10 表面保護層
20 波長変換型封止材層
30 太陽電池セル
40 裏面用封止材層
50 バックシート
Claims (14)
- 紫外線を吸収して、吸収した光より長い波長の光に変換する第1の有機物と、第1の有機物よりも長い波長の光を吸収して、吸収した光より長い波長の光に変換する第2の有機物とを含む波長変換型封止材組成物であって、
前記第1の有機物の極大発光波長λ1emと前記第2の有機物の極大励起波長λ2exとが下記式(式(1))の関係にあることを特徴とする波長変換型封止材組成物。
[式(1)]
λ1em−60≦λ2ex(nm) - 前記第1の有機物の極大吸収波長λ1absと前記第2の有機物の極大励起波長λ2exとが下記式(式(2))の関係にある、請求項1に記載の波長変換型封止材組成物。
[式(2)]
λ2ex−λ1abs≧5(nm) - 前記第2の有機物の極大励起波長λ2exが500nm以下である、請求項1または2に記載の波長変換型封止材組成物。
- 前記第1の有機物のストークシフトΔλ1が50nm以上である、請求項1〜3のいずれかに記載の波長変換型封止材組成物。
- 前記第1の有機物の発光量子収率φ1が85%以上である、請求項1〜4のいずれかに記載の波長変換型封止材組成物。
- 前記第2の有機物の発光量子収率φ2が85%以上である、請求項1〜5のいずれかに記載の波長変換型封止材組成物。
- 前記第1の有機物の極大吸収波長λ1absが300〜400nmである、請求項1〜6のいずれかに記載の波長変換型封止材組成物。
- 前記第2の有機物の極大励起波長λ2exが330〜500nmである、請求項1〜7のいずれかに記載の波長変換型封止材組成物。
- 第1の有機物が、ペリレン誘導体、ベンゾオキサゾール誘導体、ベンゾチアジアゾール誘導体、ベンゾトリアゾール誘導体、および、フルオレン誘導体からなる群から選ばれる1つを少なくとも含む、請求項1〜8のいずれかに記載の波長変換型封止材組成物。
- 第2の有機物が、ペリレン誘導体、ベンゾオキサゾール誘導体、ベンゾチアジアゾール誘導体、ベンゾトリアゾール誘導体、および、フルオレン誘導体からなる群から選ばれる1つを少なくとも含む、請求項1〜9のいずれかに記載の波長変換型封止材組成物。
- 太陽電池用途に用いられる、請求項1〜10のいずれかに記載の波長変換型封止材組成物。
- 請求項1〜11のいずれかに記載の波長変換型封止材組成物により形成された波長変換型封止材層。
- 請求項12に記載の波長変換型封止材層、および、太陽電池セルを含む太陽電池モジュール。
- 前記太陽電池セルが、結晶シリコン太陽電池、アモルファスシリコン太陽電池、微結晶シリコン太陽電池、薄膜シリコン太陽電池、ヘテロ接合型太陽電池、多接合型太陽電池、硫化カドミウム/テルル化カドミウム太陽電池、CIS系薄膜太陽電池、CIGS系薄膜太陽電池、CZTS系薄膜太陽電池、III−V族太陽電池、色素増感型太陽電池、または、有機半導体太陽電池である、請求項13に記載の太陽電池モジュール。
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KR101847615B1 (ko) * | 2016-06-28 | 2018-05-28 | 엘지전자 주식회사 | 센싱장치 |
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CN108003801A (zh) * | 2017-11-22 | 2018-05-08 | 江苏鹿山光电科技有限公司 | 一种光转化poe胶膜及其封装的光伏组件 |
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