JP2015095561A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which enables each of solders located on both sides of a semiconductor element to be evaluated; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device (10) comprises: semiconductor elements (12, 14): a first metallic component (18) arranged on one surface side of the semiconductor element; second metallic components (22, 24) arranged on a rear face side of the semiconductor element; and solders (16, 20) for electrically connecting the semiconductor with the first metallic component and the semiconductor element with the second metallic components, respectively. In order to correct warpage of the semiconductor element by sandwiching the semiconductor element from both sides, the first metallic component has a first support part (36a) and the second metallic components have second support parts (36b), respectively, which are arranged so as to sandwich the fist support part in at least one direction orthogonal to a lamination direction of the semiconductor element and each metallic component. The first support part and the second support parts contact the semiconductor element and the semiconductor element is held between the first support part and the second support parts.

Description

  The present invention relates to a semiconductor device in which metal members are disposed on both sides of a semiconductor element, and each metal member and the semiconductor element are electrically connected via solder, and a method for manufacturing the same.

  Conventionally, as described in Patent Document 1, a semiconductor device is known in which metal members are arranged on both sides of a semiconductor element and each metal member and the semiconductor element are electrically connected via solder.

  In Patent Document 1, a heat sink block (hereinafter referred to as a first metal member) is arranged on one surface side of a semiconductor element, and the semiconductor element and the first metal member are electrically connected via solder. A metal plate (hereinafter referred to as a second metal member) is disposed on the back side opposite to the one surface of the semiconductor element, and the semiconductor element and the second metal member are electrically connected via solder.

JP 2008-135613 A

  By the way, the semiconductor element warps, for example, in a mortar shape before being soldered. In particular, the amount of warpage is increasing as the semiconductor element becomes thinner. As one of the factors that cause this warp, it is considered that the film quality of the plating applied to the connection region with the solder changes from coarse to dense due to empty baking (annealing) of the semiconductor element, and the plating shrinks.

  Thus, when soldering is performed in a state where the semiconductor element is warped to form the above-described semiconductor device, it is difficult to inspect each solder by, for example, an ultrasonic imaging device (SAT). In the inspection using the SAT, in the stacking direction of the semiconductor element and each metal member, for example, an ultrasonic wave is transmitted from the metal plate side to the predetermined depth from the metal plate side, and the reflected wave is received. , Inspect the solder connection state (such as the presence or absence of voids). At that time, solder between the semiconductor element and the first metal member (hereinafter referred to as the first solder), and solder between the semiconductor element and the second metal member (hereinafter referred to as the second solder), Inspect each separately.

  However, if warping has occurred as described above, depending on the warpage, the first solder exists within the inspection range of the second solder in the stacking direction, and the connection state of the second solder is evaluated. The problem that it becomes impossible to occur. The same applies to the evaluation of the connection state of the first solder.

  SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a semiconductor device that can evaluate solders located on both sides of a semiconductor element, and a manufacturing method thereof.

  The invention disclosed herein employs the following technical means to achieve the above object. Note that the reference numerals in parentheses described in the claims and in this section indicate a corresponding relationship with specific means described in the embodiments described later as one aspect, and limit the technical scope of the invention. Not what you want.

  One of the disclosed inventions includes a semiconductor element (12, 14) having electrodes on one side and a back side opposite to the one side, a first metal member (18) disposed on one side of the semiconductor element, and a semiconductor element The second metal member (22, 24) disposed on the back side of the semiconductor element, the semiconductor element and the first metal member, and the solder (16, 20) for electrically connecting the semiconductor element and the second metal member, respectively. The first metal member and the second metal member each protrude toward the semiconductor element and have a support part (36) for correcting the warp of the semiconductor element by sandwiching the semiconductor element from both sides, One of the first metal member and the second metal member has a first support portion (36a) provided so as to protrude from the surface on the semiconductor element side, and the other protrudes from the surface on the semiconductor element side. Stacking direction with metal parts The second support portion (36b) is disposed so as to sandwich the first support portion in at least one direction orthogonal to each other, the first support portion and the second support portion are in contact with the semiconductor element, and the first support portion And the semiconductor element is hold | maintained between the 2nd support parts.

  According to this, one of the first metal member (18) and the second metal member (22, 24) has the first support portion (36a), and the other has the second support portion (36b). When the solder (16, 20) is reflowed and pressed in the stacking direction, the first support portion (36a) and the second support portion (36b) come closer to each other. The second support portion (36b) is disposed so as to sandwich the first support portion (36a) in at least one direction orthogonal to the stacking direction. Therefore, when the solder (16, 20) is reflowed, the warp of the semiconductor element (12, 14) can be corrected by applying pressure in the stacking direction. Moreover, it can suppress that a semiconductor element (12, 14) warps by maintaining the said pressurization state also at the time of cooling after reflow. In the semiconductor device thus formed, the first support part (36a) and the second support part (36b) are in contact with the semiconductor elements (12, 14), and the first support part (36a) and the second support part. The semiconductor element (12, 14) is held between (36b), and the warpage of the semiconductor element (12, 14) is reduced as compared with the state before soldering. Therefore, for example, the presence or absence of voids can be evaluated for the solder (16, 20) located on both sides of the semiconductor element (12, 14) by an ultrasonic imaging apparatus.

  The other disclosed invention further includes a heat radiating plate (32) disposed opposite to the surface of the second metal member (22, 24) opposite to the semiconductor element (12, 14), and the solder is the second metal member. The second metal member and the heat radiating plate are electrically connected to each other, and the second metal member is interposed between the heat radiating plate and the semiconductor element. And is electrically relayed.

  As described above, the second metal member (22, 24) is positioned on both sides of the semiconductor element (12, 14) even in the configuration in which the semiconductor element (12, 14) and the heat sink (32) are electrically relayed. About the solder (16, 20) to perform, the presence or absence of a void etc. can be evaluated, respectively.

  Another disclosed invention is a method of manufacturing a semiconductor device including the above-described heat dissipation plate, and one of the first metal member (18) and the second metal member (22, 24) is a first support portion (36a). ) And the other has a second support portion (36b), a preparation step, a solder (16) between the semiconductor element (12, 14) and the first metal member, and a semiconductor element, Reflowing the solder (20) with the second metal member to form a connection body (44) in which the first metal member, the semiconductor element, and the second metal member are integrated; and a second metal Solder (30) between the second metal member and the heat radiating plate in a state where the connection body is arranged on the heat radiating plate so that the member faces the heat radiating plate (32) and is pressurized from the first metal member side. A second reflow process for reflowing each solder including In the process, the first support part and the second support part are brought into contact with the semiconductor element by pressurization to correct the warp of the semiconductor element, and the pressurization is continued even during cooling after reflow, thereby reducing the warp of the semiconductor element. It is characterized by suppressing the occurrence.

  In this way, in the second reflow process, which is a subsequent process, the first support part (36a) and the second support part (36b) are brought into contact with the semiconductor element (12, 14) by pressurization, thereby causing the semiconductor element (12, 14 ), And the pressure is continuously applied during cooling after reflow to suppress the occurrence of warpage of the semiconductor element (12, 14), so that the semiconductor element (12, 14) is more than the state before soldering. A semiconductor device with reduced warpage can be obtained. Therefore, for example, the presence or absence of voids can be evaluated for the solder (16, 20) located on both sides of the semiconductor element (12, 14) by an ultrasonic imaging apparatus.

1 is a side view showing a schematic configuration of a semiconductor device according to a first embodiment. It is sectional drawing which follows the II-II line of FIG. It is sectional drawing which follows the III-III line of FIG. It is sectional drawing which follows the IV-IV line of FIG. It is a top view which shows the 1st support part side of a 1st heat sink. It is a top view which shows the 2nd support part side of a terminal. It is a figure which shows the support position of the support part with respect to a semiconductor element. It is a top view which shows the protrusion part side of a terminal. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. FIG. 4 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to a second embodiment, corresponding to FIG. 2. It is a figure which shows the support position of the support part with respect to a semiconductor element. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows schematic structure of the semiconductor device which concerns on 3rd Embodiment, and respond | corresponds to FIG. It is a figure which shows the support position of the support part with respect to a semiconductor element. It is sectional drawing which shows schematic structure of the semiconductor device which concerns on 4th Embodiment, and respond | corresponds to FIG. In the semiconductor device concerning a 5th embodiment, it is a figure showing the support position of the support part to a semiconductor element. It is a figure which shows a 1st modification, and respond | corresponds to FIG. It is sectional drawing which shows schematic structure of the semiconductor device which concerns on 6th Embodiment, and respond | corresponds to FIG. It is a top view which shows the 2nd support part side of a terminal. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows a 2nd modification, and respond | corresponds to FIG. It is sectional drawing which shows the manufacturing method of a semiconductor device, and respond | corresponds to FIG. It is sectional drawing which shows a 3rd modification.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, common or related elements are given the same reference numerals. In addition, a stacking direction of semiconductor elements, terminals, and heat sinks, which will be described later, is a Z direction, orthogonal to the Z direction, and an arrangement direction of two semiconductor elements is an X direction. A direction perpendicular to both the Z direction and the X direction is referred to as a Y direction. Unless otherwise specified, the shape along the XY plane defined by the X direction and the Y direction described above is a planar shape.

(First embodiment)
First, a schematic configuration of the semiconductor device will be described. This semiconductor device is known as a so-called 1 in 1 package, and is incorporated in an inverter circuit of a vehicle, for example, and is applied as a device for PWM control of a load.

  As shown in FIGS. 1 to 4, the semiconductor device 10 includes two semiconductor elements 12 and 14. The semiconductor element 12 is formed by forming an insulated gate bipolar transistor (IGBT) on a semiconductor chip. The semiconductor element 14 is formed by forming a commutation diode (FWD) on a semiconductor chip. The commutation diode is also referred to as a reflux diode.

  Each of the semiconductor elements 12 and 14 has a so-called vertical structure so that a current flows in the Z direction, and has electrodes (not shown) on both sides in the Z direction. On one side facing the first heat sink 18, the semiconductor element 12 has a collector electrode, and the semiconductor element 14 has a cathode electrode. On the other hand, the semiconductor element 12 has an emitter electrode and a gate electrode, and the semiconductor element 14 has an anode electrode on the side opposite to the one surface.

  The semiconductor elements 12 and 14 are arranged side by side in the X direction and are arranged at substantially the same position in the Z direction. Further, as indicated by broken lines in FIG. 1, the planar shapes of the semiconductor elements 12 and 14 are both substantially rectangular.

  The collector electrode of the semiconductor element 12 is electrically, thermally and mechanically connected to the first heat sink 18 via the solder 16. Similarly, the cathode electrode of the semiconductor element 12 is also electrically, thermally and mechanically connected to the first heat sink 18 via the solder 16. The first heat sink 18 corresponds to the first metal member recited in the claims in the present embodiment.

  The first heat sink 18 functions to radiate the heat generated by the semiconductor elements 12 and 14 to the outside of the semiconductor device 10. Moreover, in order to ensure heat conductivity and electrical conductivity, it is formed using at least a metal material. For example, it consists of metal materials excellent in thermal conductivity and electrical conductivity, such as copper, copper alloy, and aluminum alloy. In the first heat sink 18, a region and a side surface that are opposed to the semiconductor elements 12 and 14 and where the solder 16 is not disposed are covered with a sealing resin body 34 described later. On the other hand, the surface opposite to the facing surface is a heat radiating surface 18 a exposed from one surface 34 a of the sealing resin body 34.

  The first heat sink 18 has a terminal portion 18 b that doubles as the collector terminal of the IGBT configured in the semiconductor element 12 and the cathode terminal of the FWD configured in the semiconductor element 14. As shown in FIG. 4, the terminal portion 18 b is disposed at a position closer to the semiconductor elements 12 and 14 than the heat dissipation surface 18 a of the first heat sink 18 in the Z direction. Moreover, as shown in FIG.1 and FIG.4, it is extended in the Y direction. A part thereof protrudes from the side surface 34 c of the sealing resin body 34. Thus, the terminal portion 18b can be electrically connected to an external device.

  Further, the first heat sink 18 has a support portion 36 on the surface facing the semiconductor elements 12 and 14. Details of the support portion 36 will be described later.

  The emitter electrode of the semiconductor element 12 is electrically, thermally and mechanically connected to the terminal 22 via the solder 20. Similarly, the anode electrode of the semiconductor element 12 is also electrically, thermally and mechanically connected to the terminal 24 via the solder 20. These terminals 22 and 24 correspond to the 2nd metal member as described in a claim in this embodiment.

  Since the terminals 22 and 24 are located in the middle of the heat conduction and electric conduction paths between the second heat sink 32 and the semiconductor elements 12 and 14 described later, at least a metal material is used to ensure the heat conductivity and the electric conductivity. It is formed using. For example, it is made of a metal material having excellent thermal conductivity and electrical conductivity such as copper and molybdenum.

  The terminals 22 and 24 also have a support portion 36 on the surface facing the semiconductor elements 12 and 14. Furthermore, a protrusion 38 is provided on the surface opposite to the surface facing the semiconductor elements 12, 14, that is, the surface facing the second heat sink 32. Details of the support 36 and the protrusion 38 will be described later.

  Further, as shown in FIG. 4, a control terminal 28 is electrically connected to a control pad such as a gate electrode formed on the gate electrode formation surface of the semiconductor element 12 through a bonding wire 26. As shown in FIGS. 1 and 4, the control terminal 28 extends in the Y direction. In detail, it is extended on the opposite side to the terminal part 18b. A part of the side surface 34c of the sealing resin body 34 projects outside from the surface opposite to the surface from which the terminal portion 18b projects. Thus, the control terminal 28 can be electrically connected to an external device. In this embodiment, there are a total of five control terminals 28, two for temperature measuring diodes, one for gate electrodes, one for current sensing, and one for emitter sensing.

  A second heat sink 32 is electrically, thermally, and mechanically connected to the surfaces of the terminals 22, 24 opposite to the semiconductor elements 12, 14 via solder 30. Similar to the first heat sink 18, the second heat sink 32 functions to radiate the heat generated by the semiconductor elements 12 and 14 to the outside of the semiconductor device 10. The 2nd heat sink 32 is equivalent to the heat sink as described in a claim.

  Similar to the first heat sink 18, the second heat sink 32 is formed using at least a metal material in order to ensure thermal conductivity and electrical conductivity. For example, it consists of metal materials excellent in thermal conductivity and electrical conductivity, such as copper, copper alloy, and aluminum alloy. Moreover, the area | region and side surface in which the solder 30 is not arrange | positioned among the opposing surfaces which oppose the terminals 22 and 24 among the 2nd heat sinks 32 are coat | covered with the sealing resin body 34. FIG. On the other hand, the surface opposite to the facing surface is a heat radiating surface 32 a exposed from the back surface 34 b opposite to the one surface 34 a in the sealing resin body 34.

  The second heat sink 32 has a terminal portion 32 b that serves as both the emitter terminal of the semiconductor element 12 and the anode terminal of the semiconductor element 14. As shown in FIG. 4, the terminal portion 32 b is disposed at a position closer to the semiconductor element 12 than the heat radiation surface 32 a of the second heat sink 32 in the Z direction. Further, as shown in FIGS. 1 and 4, the second direction is such that the semiconductor elements 12 and 14 are sandwiched between the control terminal 28 in the Y direction while being shifted from the control terminal 28 in the X direction. The heat sink 32 extends in the Y direction. A part of the side surface 34c of the sealing resin body 34 protrudes to the outside from the surface opposite to the surface from which the control terminal 28 protrudes. Thus, the terminal part 32b can be electrically connected to an external device.

  Further, the second heat sink 32 accommodates the solder 30 overflowing from the opposing region (connection region with the solder 30) between the second heat sink 32 and the terminals 22 and 24 at the time of reflow. , 24 is provided with a groove 32c provided on the surface facing the surface. The groove portion 32c is provided in an integral annular shape (a continuous annular shape without interruption) surrounding the above-described facing region.

  The semiconductor elements 12 and 14, part of the first heat sink 18, terminals 22 and 24, control terminal 28, bonding wire 26, solder 16, 20 and 30, and part of the second heat sink 32 are encapsulated resin bodies. 34 is sealed. The sealing resin body 34 is formed by injecting resin into a mold. As the resin, for example, an epoxy resin can be employed.

  Next, the support part 36 and the protrusion part 38 are demonstrated based on FIGS.

  The support part 36 is connected to the first heat sink 18 connected to the semiconductor elements 12 and 14 via the solder 16 and the terminals 22 and 24 connected to the semiconductor elements 12 and 14 via the solder 20 in the Z direction, respectively. Is provided. The support portion 36 protrudes from the first heat sink 18 and the terminals 22 and 24 toward the semiconductor elements 12 and 14, and the semiconductor elements 12 and 14 are warped by sandwiching the semiconductor elements 12 and 14 from both sides in the Z direction. to correct. In addition, a new warp is suppressed.

  The support portion 36 includes a first support portion 36a provided on one of the first heat sink 18 and the terminals 22 and 24, and a second support portion 36b provided on the other. In the present embodiment, since the semiconductor elements 12 and 14 are convexly warped toward the first heat sink 18, the first heat sink 18 is provided with a first support portion 36 a and the terminals 22 and 24 are respectively provided with a second support portion 36 b. Is provided.

  As shown in FIGS. 2, 4, and 5, the first support portion 36 a is provided on the surface of the first heat sink 18 that faces the semiconductor elements 12 and 14. In FIG. 5, the arrangement area of the semiconductor elements 12 and 14 is indicated by a broken line as a reference line. The first support portion 36 a is provided for each of the semiconductor elements 12 and 14. In the present embodiment, the semiconductor elements 12 and 14 are provided so as to suppress the center position along the XY plane.

  As shown in FIGS. 2, 3, and 6, the second support portion 36 b is provided on the surface of the terminal 22 that faces the semiconductor elements 12 and 14. The second support portion 36b is provided so as to sandwich the first support portion 36a in at least one direction orthogonal to the Z direction, that is, at least one of the X direction and the Y direction. In the present embodiment, as shown in FIG. 6, the second support portions 36 b are respectively provided at both ends in the X direction of the planar rectangular opposing surface 22 a in the terminal 22. Each second support 36b extends in the Y direction. Although FIG. 6 illustrates the terminal 22, the terminal 24 has the same structure.

  In FIG. 7, the pressing position of the first support portion 36a in the semiconductor element 12 is indicated by a one-dot chain line, and the pressing position of the second support portion 36b is indicated by a broken line. The first support portion 36 a is configured to hold the substantially center of the semiconductor element 12. The second support portions 36b are configured to respectively hold both end portions of the emitter electrode 40 of the semiconductor element 12 in the X direction. Reference numeral 42 shown in FIG. 7 is a control pad to which the bonding wire 26 is connected, and this control pad 42 is provided side by side in the X direction on one end side in the Y direction as shown in FIG. ing. In FIG. 7, the semiconductor element 12 is illustrated, but the semiconductor element 14 has substantially the same structure. The difference is that the semiconductor element 14 does not have a control pad and has only an anode electrode on the surface on the terminal 24 side.

  In the semiconductor device 10, the first support portion 36 a and the second support portion 36 b are in contact with the semiconductor elements 12 and 14, respectively, as shown in FIGS. 2 to 4, and the first support portion 36 a and the second support portion 36 b are in contact with each other. The semiconductor elements 12 and 14 are held between the first support part 36a and the second support part 36b in a state where the warp is corrected by the part 36b.

  The protrusion 38 is provided on at least one of the terminals 22, 24 and the second heat sink 32 in order to ensure the thickness of the solder 30 interposed between the terminals 22, 24 and the second heat sink 32. In the present embodiment, as described above, the protrusions 38 projecting toward the second heat sink 32 are provided on the surfaces of the terminals 22 and 24 on the second heat sink 32 side. As shown in FIG. 8, the back surface 22b opposite to the facing surface 22a of the terminal 22 also has a planar rectangular shape, and the protrusions 38 are provided at the same height at the four corners of the back surface 22b. As shown in FIG. 3, the protrusion 38 is in contact with the second heat sink 32 in the semiconductor device 10.

  Next, a method for manufacturing the semiconductor device 10 will be described with reference to FIGS.

  First, the semiconductor elements 12 and 14, the heat sinks 18 and 32, the terminals 22 and 24, and the control terminal 28 are prepared. At this time, the first heat sink 18 having the first support portion 36a and the terminals 22 and 24 having the second support portion 36b are prepared. The semiconductor elements 12 and 14 are subjected to baking (annealing) at the time of forming the elements, for example, the quality of the plating applied to the connection region (emitter electrode and anode electrode) of the solder 20 changes from coarse to dense. Shrink. Therefore, in the prepared state, the semiconductor elements 12 and 14 have a convex warp on the first heat sink 18 side.

  Next, a 1st reflow process is implemented. In the first reflow process, the solder 16 interposed between the semiconductor elements 12 and 14 and the first heat sink 18 and the solder 20 interposed between the semiconductor elements 12 and 14 and the terminals 22 and 24 are reflowed. . Then, as shown in FIG. 9, a connection body 44 in which the first heat sink 18, the semiconductor elements 12 and 14, and the terminals 22 and 24 are integrated is formed.

  In the present embodiment, the solders 20 and 30 are preliminarily soldered (greeting solder) on both surfaces of the terminals 22 and 24 in the above-described preparation step. In order to absorb the tolerance variation of the height in the semiconductor device 10, the solder 30 is arranged with a large margin. Next, the first support portion 36 a is positioned so that the projection apex substantially coincides with the centers of the semiconductor elements 12 and 14, and the semiconductor elements 12 and 14 are disposed on the first heat sink 18 via the foil-like solder 16. . Further, the semiconductor elements 12 and 14 are positioned so that the second support portion 36b is positioned at a predetermined value, and the terminals 22 and 24 are disposed on the semiconductor elements 12 and 14. And in this lamination | stacking state, each solder 16,20,30 is reflowed.

  The solder 16, 20, and 30 are melted by reflow, and the support portions 36a and 36b come into contact with the semiconductor elements 12 and 14, respectively. However, no external force is applied in the Z direction, and only the weights of the terminals 22 and 24 are applied to the semiconductor elements 12 and 14. The semiconductor elements 12 and 14 are deformed in a direction in which the warpage is relieved when the temperature becomes high at the time of reflow, but deformed in a direction in which the warpage returns by cooling after the reflow.

  Therefore, in the connection body 44 after the first reflow process, as shown in FIG. 9, the first heat sink 18 and the semiconductor elements 12 and 14 are warped in a convex mortar shape on the first heat sink 18 side. The semiconductor elements 12 and 14 are connected, and the semiconductor elements 12 and 14 and the terminals 22 and 24 are connected. Note that the solder 30 does not yet have the second heat sink 32 to be connected, and thus has a shape that rises with the centers of the terminals 22 and 24 as vertices due to surface tension.

  In the first reflow process, a guide for suppressing the semiconductor elements 12 and 14 and the terminals 22 and 24 from being inclined with respect to the first heat sink 18 may be used as necessary.

  Next, the control terminal 28 and the control pad 42 of the semiconductor element 12 are connected by the bonding wire 26.

  Next, a 2nd reflow process is implemented. In the second reflow process, as shown in FIG. 10, the connection body 44 is disposed on the second heat sink 32 so that the terminals 22 and 24 are opposed to the second heat sink 32 via the solder 30. Then, as shown in FIGS. 10 and 11, the solders 16, 20, and 30 are reflowed while being pressurized from the first heat sink 18 side. Due to the pressurization described above, the first support portion 36a pushes in the protrusions of the semiconductor elements 12 and 14 while the second support portion 36b receives the semiconductor elements 12 and 14. That is, the first support portion 36a approaches the second support portion 36b in the Z direction. The second support portion 36b is provided so as to sandwich the first support portion 36a in the X direction. Therefore, the warp of the semiconductor elements 12 and 14 is corrected (reduced). Further, by continuing the pressurization even after cooling after reflow, the state in which the warpage of the semiconductor elements 12 and 14 is corrected (reduced) is maintained, and the solders 16, 20, and 30 are solidified in this state. Therefore, warpage of the semiconductor elements 12 and 14 due to a change from high temperature to room temperature is suppressed.

  The protrusions 38 provided on the terminals 22 and 24 are in contact with the second heat sink 32 by at least the pressurization, and this state is maintained even during cooling after reflow. Therefore, after the second reflow, the thickness of the solder 30 becomes equal to the protrusion height of the protrusion 38.

  The above pressurization only needs to reduce the warpage generated in the semiconductor elements 12 and 14 to a certain extent, and is preferably set to a level that allows the semiconductor elements 12 and 14 to have a flat shape (a state in which there is almost no warpage). Therefore, it is preferable to apply pressure so that the opposing distance in the Z direction between the first support portion 36a and the second support portion 36b (distance between the tips of the protrusions) is substantially equal to the thickness of the semiconductor elements 12 and 14.

  In this embodiment, as shown in FIGS. 10 and 11, the heat radiation surface 32 a of the second heat sink 32 and the heat radiation surface 18 a of the first heat sink 18 are brought into contact with each other by pressurization, and the heat radiation surfaces 18 a and 32 a are separated by a predetermined distance. A holding jig 46 is used. The jig 46 includes a base 46a, a top plate 46b, and a spacer 46c. The second heat sink 32 is disposed so that the heat radiating surface 32a contacts the base 46a. A spacer 46c having a predetermined length is attached to the base 46a. In addition, the top plate 46 b is disposed on the connection body 44. In the state before pressurization, the top plate 46b is not in contact with the spacer 46c. When the top plate 46b is pressurized as shown in FIG. 10, the top plate 46b approaches the base 46a and eventually comes into contact with the upper end of the spacer 46c as shown in FIG. When the top plate 46b comes into contact with the spacer 46c, the top plate 46b does not approach the base 46a any more. Thus, the spacer 46c can make a predetermined distance between the heat radiation surfaces 18a and 32a. That is, the pressing amount of the semiconductor elements 12 and 14 by the support portion 36 can also be defined. For example, the pressing amount of the semiconductor elements 12 and 14 by the support portion 36 can be defined so that the semiconductor elements 12 and 14 have a flat plate shape.

  Next, a molding process for molding the sealing resin body 34 is performed. In this molding step, the connection structure obtained in the second reflow step is placed in a mold (not shown), and a resin is injected into the mold cavity to mold the sealing resin body 34. In the present embodiment, the sealing resin body 34 is formed by a transfer molding method using an epoxy resin. In addition, the sealing resin body 34 is molded so that the heat sinks 18 and 32 are not exposed from the sealing resin body 34 in order to cut the heat radiation surfaces 18 a and 32 a side of the heat sinks 18 and 32 in a cutting process described later.

  Next, a cutting process is performed. In this cutting step, the first heat sink 18 is cut together with the sealing resin body 34 from the one surface 34a side of the sealing resin body 34 with a cutting tool (not shown). By this cutting, only the heat radiation surface 18a of the first heat sink 18 is exposed from the sealing resin body 34, and the heat radiation surface 18a is substantially flush with the one surface 34a. Similarly, the second heat sink 32 is cut together with the sealing resin body 34 from the back surface 34 b side of the sealing resin body 34. By this cutting, only the heat radiation surface 32a of the second heat sink 32 is exposed from the sealing resin body 34, and the heat radiation surface 32a is substantially flush with the back surface 34b.

  Then, after the cutting process, the semiconductor device 10 can be obtained by removing a tie bar of a lead frame (not shown). The removal of unnecessary portions can also be performed before the cutting process.

  Next, effects of the semiconductor device 10 and the manufacturing method thereof according to the present embodiment will be described.

  In the present embodiment, of the first heat sink 18 and the terminals 22 and 24 sandwiching the semiconductor elements 12 and 14, the first heat sink 18 has the first support portion 36a, and the terminals 22 and 24 are the second support portion 36b. have. Therefore, in the second reflow process, when pressure is applied in the Z direction, the first support portion 36a pushes in the protrusions of the semiconductor elements 12 and 14 while the second support portion 36b receives the semiconductor elements 12 and 14. . That is, the 1st support part 36a and the 2nd support part 36b approach in the Z direction. The second support portion 36b is provided so as to sandwich the first support portion 36a in the X direction. Therefore, the warp generated in the semiconductor elements 12 and 14 can be corrected (reduced).

  Further, by continuing the pressurization during cooling after reflow, the state in which the warpage of the semiconductor elements 12 and 14 is corrected (reduced) is maintained, and the solders 16, 20, and 30 are solidified in this state. Therefore, it is possible to suppress warping of the semiconductor elements 12 and 14 due to a change from high temperature to room temperature after the second reflow process.

  In the semiconductor device 10 thus formed, the first support portion 36a and the second support portion 36b are in contact with the semiconductor elements 12 and 14, and the semiconductor element is interposed between the first support portion 36a and the second support portion 36b. 12 and 14 are held, and the warpage of the semiconductor elements 12 and 14 is reduced as compared with the state before soldering. Therefore, for example, the presence or absence of voids can be evaluated for the solders 16 and 20 located on both sides of the semiconductor elements 12 and 14 by an ultrasonic imaging apparatus (SAT).

  In the present embodiment, a jig 46 that maintains a predetermined distance between the heat radiation surfaces 18a and 32a is used in the second reflow process. Thereby, it is possible to set a predetermined distance between the heat radiation surfaces 18a and 32a. That is, it is possible to prevent the semiconductor elements 12 and 14 from being pressed too much by the support portions 36 (36a and 36b). For example, the semiconductor elements 12 and 14 can be prevented from warping in reverse.

  In the present embodiment, the protrusions 38 projecting toward the second heat sink 32 are provided on the surfaces of the terminals 22 and 24 on the second heat sink 32 side. Therefore, as described above, the thickness of the solder 30 interposed between the terminals 22 and 24 and the second heat sink 32 can be ensured while applying pressure in the second reflow process.

  Further, in the present embodiment, the second heat sink 32 has a groove 32 c for accommodating the overflowing solder 30. Therefore, it is possible to suppress the solder 30 from spreading to the semiconductor elements 12 and 14 via the side surfaces of the terminals 22 and 24 while applying pressure in the second reflow process as described above.

  In addition, although the example in which the second support portion 36b is provided so as to sandwich the first support portion 36a in the X direction has been described, the second support portion 36b may be configured to sandwich the first support portion 36a in the Y direction. The same effect can be produced.

(Second Embodiment)
In the present embodiment, descriptions of parts common to the semiconductor device 10 and the manufacturing method thereof shown in the first embodiment are omitted.

  In the present embodiment, as shown in FIG. 12, the first feature is that the terminals 22 and 24 having the second support portion 36b further have a third support portion 36c. A second feature is that the second reflow process can be performed without using the jig 46 shown in the first embodiment.

  The third support portion 36c protrudes from the surfaces of the terminals 22 and 24 on the semiconductor element 12 and 14 side with the same height as the second support portion 36b. As shown in FIG. 13, the third support portion 36c is provided at a position overlapping the first support portion 36a in the XY plane. That is, the third support portion 36 c is provided corresponding to the center position of the semiconductor elements 12 and 14.

  The third support portion 36c is not in contact with the semiconductor elements 12 and 14 in the connection body 44 obtained by the first reflow process.

  In the second reflow step, as shown in FIG. 14, the second heat sink 32 is disposed on the base 48, the connecting body 44 is disposed on the second heat sink 32, and the first heat sink 18 is pressurized in the Z direction. Then, the solder 16, 20, and 30 are reflowed. Due to the pressurization described above, the first support portion 36a pushes the protrusions of the semiconductor elements 12 and 14 while the second support portion 36b receives the semiconductor elements 12 and 14. That is, the first support portion 36a approaches the second support portion 36b in the Z direction. As shown in FIG. 15, the third support part 36 c contacts the semiconductor elements 12, 14, that is, the distance between the first support part 36 a and the third support part 36 c in the Z direction is the thickness of the semiconductor elements 12, 14. Becomes substantially equal to the first support portion 36a, the semiconductor elements 12 and 14 cannot be pushed any further.

  Thus, in this embodiment, since the 3rd support part 36c is provided in the position facing the 1st support part 36a, even if it does not use the jig | tool 46 shown in 1st Embodiment, the support part 36 (36a, 36b). It is possible to suppress excessive pressing of the semiconductor elements 12 and 14. For example, the semiconductor elements 12 and 14 can be prevented from warping in reverse. However, the semiconductor device 10 having the third support portion 36 c can be formed using the jig 46.

  Further, when the third support portion 36c comes into contact with the semiconductor elements 12 and 14, the first support portion 36a cannot push the semiconductor elements 12 and 14 any more, so that the semiconductor elements 12 and 14 can be easily corrected into a flat plate shape.

(Third embodiment)
In the present embodiment, descriptions of parts common to the semiconductor device 10 and the manufacturing method thereof shown in the second embodiment are omitted.

  In 2nd Embodiment, the terminal 22 and 24 showed the example which has the 3rd support part 36c provided in the position which overlaps with the 1st support part 36a in XY plane. On the other hand, in the present embodiment, as shown in FIG. 16, the first heat sink 18 having the first support portion 36a further has a fourth support portion 36d.

  The fourth support portion 36d protrudes from the surface of the first heat sink 18 on the semiconductor element 12 and 14 side with the same height as the first support portion 36a. Further, as shown in FIG. 17, the fourth support portion 36d is provided at a position overlapping the second support portion 36b in the XY plane. That is, the fourth support portion 36d is provided so as to sandwich the first support portion 36a in the X direction, like the second support portion 36b.

  Similarly to the third support portion 36c described above, the fourth support portion 36d is not in contact with the semiconductor elements 12 and 14 in the connection body 44 obtained by the first reflow process. In the second reflow step, the fourth support portion 36d comes into contact with the semiconductor elements 12 and 14 by pressurization, that is, the distance between the second support portion 36b and the fourth support portion 36d in the Z direction is the semiconductor element 12, When the thickness becomes substantially equal to 14, the first support portion 36a cannot push the semiconductor elements 12 and 14 any further.

  Therefore, the configuration shown in the present embodiment can achieve the same effects as the configuration shown in the second embodiment. That is, in this embodiment, since the fourth support portion 36d is provided at a position opposite to the second support portion 36b, the semiconductor by the support portion 36 (36a, 36b) can be used without using the jig 46 shown in the first embodiment. Excessive pressing of the elements 12 and 14 can be suppressed. For example, the semiconductor elements 12 and 14 can be prevented from warping in reverse. However, the semiconductor device 10 having the fourth support portion 36 d can be formed using the jig 46.

  In addition, when the fourth support portion 36d comes into contact with the semiconductor elements 12 and 14, the first support portion 36a cannot push the semiconductor elements 12 and 14 any more, so that the semiconductor elements 12 and 14 can be easily corrected into a flat plate shape.

  The configuration shown in the second embodiment and the configuration shown in the third embodiment can be combined. In this case, the first heat sink 18 has the first support part 36a and the fourth support part 36d, and the terminals 22 and 24 have the second support part 36b and the third support part 36c. With such a configuration, not only the warp of the semiconductor elements 12 and 14 is convex toward the first heat sink 18 side, but also the case where the warp is toward the semiconductor elements 12 and 14 side can be dealt with. When projecting toward the semiconductor elements 12, 14, the third support portion 36c functions as the first support portion recited in the claims, and the fourth support portion 36d serves as the second support portion recited in the claims. Function.

(Fourth embodiment)
In the present embodiment, descriptions of parts common to the semiconductor device 10 and the manufacturing method thereof shown in the second embodiment are omitted.

  In 2nd Embodiment, the terminal 22 and 24 provided the 3rd support part 36c, and the example which suppresses excessive pressing of the semiconductor elements 12 and 14 was shown. In the third embodiment, an example in which the first heat sink 18 is provided with the fourth support portion 36d to suppress excessive pressing of the semiconductor elements 12 and 14 has been described. On the other hand, in this embodiment, as shown in FIG. 18, the solder 16 has beads 50 for securing a predetermined solder thickness, thereby suppressing excessive pressing of the semiconductor elements 12 and 14. And

  As the beads 50, metal or ceramic balls or columnar bodies can be used. In this embodiment, Ni balls are employed.

  As described above, when the solder 16 including the beads 50 is employed, the beads 50 come into contact with the first heat sink 18 and the semiconductor elements 12 and 14 at a plurality of locations by pressurization in the second reflow process, that is, in the Z direction. When the distance between the second support portion 36b and the bead 50 becomes substantially equal to the thickness of the semiconductor elements 12 and 14, the first support portion 36a cannot push the semiconductor elements 12 and 14 any further.

  Therefore, the configuration shown in the present embodiment can achieve the same effects as the configuration shown in the second embodiment. That is, in this embodiment, since the beads 16 are included in the solder 16, the semiconductor elements 12 and 14 are not pressed too much by the support portions 36 (36a and 36b) without using the jig 46 shown in the first embodiment. Can be suppressed. For example, the semiconductor elements 12 and 14 can be prevented from warping in reverse. However, the semiconductor device 10 having the beads 50 can be formed using the jig 46.

  Further, when the beads 50 come into contact with the first heat sink 18 and the semiconductor elements 12 and 14 at a plurality of locations, the first support portion 36a cannot push the semiconductor elements 12 and 14 any more, so that the semiconductor elements 12 and 14 are flat. Easy to correct.

  The bead 50 is not limited to the solder 16. By including the beads 50 in at least one of the solders 16 and 20, the above effect can be obtained.

(Fifth embodiment)
In the present embodiment, descriptions of parts common to the semiconductor device 10 and the manufacturing method thereof shown in the first embodiment are omitted.

  In the first embodiment, an example in which the second support portion 36b is provided so as to sandwich the first support portion 36a in the X direction has been described. In contrast, the present embodiment is characterized in that the second support portion 36b is provided so as to surround the first support portion 36a in the XY plane.

  As shown in FIG. 19, as in the first embodiment, both end portions in the X direction of the emitter electrode 40 of the semiconductor element 12 are pressed by the second support portion 36b. Furthermore, in the present embodiment, both end portions in the Y direction of the emitter electrode 40 of the semiconductor element 12 are pressed by the second support portion 36b. That is, the four second support portions 36b are provided so as to sandwich the first support portion 36a not only in one direction orthogonal to the Z direction but also in both the X direction and the Y direction. In FIG. 19, only the semiconductor element 12 side (terminal 22) is shown, but the semiconductor element 14 side (terminal 24) also has the same structure.

  According to this, compared with the configuration described in the first embodiment, it is possible to effectively correct the warp generated in the semiconductor elements 12 and 14. Moreover, generation | occurrence | production of curvature can be suppressed effectively.

  FIG. 19 shows an example in which the first support part 36a is surrounded by the four second support parts 36b in the XY plane. However, the number of the second support portions 36b is not limited to the above example, and may be configured to have more than four second support portions 36b. Moreover, you may employ | adopt the cyclic | annular 2nd support part 36b like the 1st modification shown in FIG. In FIG. 20, the annular second support portion 36 b is provided along the outer peripheral end portion of the emitter electrode 40 of the semiconductor element 12. According to this, the warp of the semiconductor elements 12 and 14 can be corrected more effectively. Moreover, generation | occurrence | production of curvature can be suppressed more effectively.

  In the present embodiment, the example in which the second support portion 36b is provided so as to surround the first support portion 36a in the configuration shown in the first embodiment has been described. However, the above-described second support portion 36b can be combined with the configurations shown in the other embodiments.

(Sixth embodiment)
In the present embodiment, descriptions of parts common to the semiconductor device 10 and the manufacturing method thereof shown in the fifth embodiment (first modification) are omitted.

  In this embodiment, the 2nd support part 36b is provided cyclically like the above-mentioned 1st modification. And as shown in FIG.21 and FIG.22, the terminals 22 and 24 have the through-hole 52 in order to suppress that the solder 20 overflows outside the cyclic | annular 2nd support part 36b in a 2nd reflow process. It is characterized by.

  As shown in FIG. 22, the through hole 52 has one end opened in a region inside the second support portion 36 b on the facing surface 22 a of the terminal 22. In the present embodiment, an opening is made at the center position of the terminal 22 in the XY plane. As shown in FIG. 21, the through hole 52 is formed along the Z direction, and the other end is opened on the back surface 22 b of the terminal 22.

  Further, in the first through hole 52, the solder 30 does not move to the solder 20 (semiconductor element 12) side due to its own weight in the first reflow process, and excessive solder 20 passes through the through hole 52 in the second reflow process. It has a diameter that can move toward the solder 30 (second heat sink 32). In addition, although the example of the through-hole 52 provided in the terminal 22 was shown, the same through-hole 52 is provided also in the terminal 24.

  Thus, when the through holes 52 are provided in the terminals 22 and 24, as shown in FIG. 23, before the molten solder 20 overflows from the dam by the annular second support portion 36b in the second reflow process, the solder Part of 20 can escape to the solder 30 side through the through hole 52. Therefore, for example, wetting and spreading on the side surfaces of the semiconductor elements 12 and 14 can be suppressed.

  The position and number of the through holes 52 are not limited to the above example. The terminals 22 and 24 may have a plurality of through holes 52.

  In this embodiment, the example in which the through-hole 52 is provided in the structure shown in 1st Embodiment was shown. However, the through hole 52 can be combined with the configuration shown in the other embodiments.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.

  In the embodiment described above, the first heat sink 18 has the first support portion 36a, and the terminals 22 and 24 have the second support portion 36b. However, if the semiconductor elements 12 and 14 are warped convexly toward the terminals 22 and 24, the first heat sink 18 has the second support 36b as in the second modification shown in FIG. The terminals 22 and 24 may have the first support portion 36a.

  In this case, as shown in FIG. 25, when pressure is applied in the Z direction in the second reflow step, the protrusions of the semiconductor elements 12 and 14 are formed in the state where the second support portion 36b receives the semiconductor elements 12 and 14. The support portion 36a is pushed in. The second support portion 36b is provided so as to sandwich the first support portion 36a in the X direction. Therefore, the warp generated in the semiconductor elements 12 and 14 can be corrected (reduced). Further, by continuing the pressurization during cooling after reflow, the state in which the warpage of the semiconductor elements 12 and 14 is corrected (reduced) is maintained, and the solders 16, 20, and 30 are solidified in this state. Therefore, it is possible to suppress warping of the semiconductor elements 12 and 14 due to a change from high temperature to room temperature after the second reflow process.

  In the above embodiment, an example in which the two semiconductor elements 12 and 14 and the two terminals 22 and 24 are provided has been described. However, the number of semiconductor elements included in the semiconductor device 10 is not limited to the above example. Further, the number of terminals is not limited to the above example, and a configuration having no terminals can be adopted.

  In the third modification shown in FIG. 26, the semiconductor device 10 includes one semiconductor element 12, a first heat sink 18 disposed on one surface side of the semiconductor element 12, and a second disposed on the back surface side of the semiconductor element 12. A heat sink 32, solder 16 that connects the semiconductor element 12 and the first heat sink 18, and solder 54 that connects the semiconductor element 12 and the second heat sink 32 are provided. In this configuration, the first heat sink 18 corresponds to the first metal member recited in the claims, and the second heat sink 32 corresponds to the second metal member. And the 1st heat sink 18 has the 1st support part 36a, and the 2nd heat sink 32 has the 2nd support part 36b.

  The position at which the semiconductor elements 12 and 14 are pressed by the support portion 36 is not limited to the above example. For example, when the outer side (protective film) of the emitter electrode 40 is pressed, the second support portion 36 b made of an electrically insulating material may be provided on the facing surface 22 a of the terminal 22.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor device, 12, 14 ... Semiconductor element, 16 ... Solder, 18 ... 1st heat sink, 18a ... Heat radiation surface, 18b ... Terminal part, 20 ... Solder, 22, 24 ... terminal, 22a ... opposite surface, 22b ... back surface, 26 ... bonding wire, 28 ... control terminal, 30 ... solder, 32 ... second heat sink, 32a ... Heat dissipation surface, 32b ... Terminal part, 32c ... Groove part, 34 ... Sealing resin body, 34a ... One side, 34b ... Back, 34c ... Side, 36 ... Support part 36a ... 1st support part 36b ... 2nd support part 36c ... 3rd support part 36d ... 4th support part 38 ... Projection part 40 ... Emitter electrode, 42 ... control pad, 44 ... connector, 46 ... jig, 4 a ... base, 46b ... top plate, 46c ... spacer 48 ... base, 50 ... bead, 52 ... through hole

Claims (12)

A semiconductor element (12, 14) having electrodes on one side and the back side opposite to the one side;
A first metal member (18) disposed on one side of the semiconductor element;
A second metal member (22, 24) disposed on the back side of the semiconductor element;
Solder (16, 20) for electrically connecting the semiconductor element and the first metal member, and the semiconductor element and the second metal member, respectively;
Prepared,
The first metal member and the second metal member each have a support portion (36) for projecting toward the semiconductor element and correcting the warp of the semiconductor element by sandwiching the semiconductor element from both sides,
As the support portion, one of the first metal member and the second metal member has a first support portion (36a) provided to protrude from the surface on the semiconductor element side, and the other is on the semiconductor element side. A second support portion (36b) that protrudes from the surface and is disposed so as to sandwich the first support portion in at least one direction orthogonal to the stacking direction of the semiconductor element and each metal member;
The semiconductor device, wherein the first support part and the second support part are in contact with the semiconductor element, and the semiconductor element is held between the first support part and the second support part.   One of the first metal member (18) and the second metal member (22, 24) having the second support portion (36 b) is the second metal member (12, 14) side from the surface on the second side. It has a third support part (36c) that protrudes at the same height as the support part and is provided at a position overlapping the first support part (36a) in a plane perpendicular to the stacking direction. The semiconductor device according to claim 1.   One of the first metal member (18) and the second metal member (22, 24) having the first support portion (36a) is formed from the surface on the semiconductor element (12, 14) side. It has a fourth support part (36d) provided at a position that protrudes at the same height as the support part and overlaps the second support part (36b) in a plane perpendicular to the stacking direction. The semiconductor device according to claim 1 or 2.   The solder (16) interposed between the semiconductor element (12, 14) and the first metal member (18) and between the semiconductor element and the second metal member (22, 24), respectively. , 20) at least one of them includes a bead (50) for securing a predetermined solder thickness.   The said 2nd support part (36b) is provided so that the said 1st support part (36a) may be enclosed in the surface orthogonal to the said lamination direction. A semiconductor device according to 1.   The semiconductor device according to claim 5, wherein the second support portion is provided in an annular shape. A heat radiating plate (32) disposed opposite to the surface of the second metal member (22, 24) opposite to the semiconductor element (12, 14);
The solder is also interposed between the second metal member and the heat sink, to electrically connect the second metal member and the heat sink,
The said 2nd metal member is interposed between the said heat sink and the said semiconductor element, and has electrically relayed the said semiconductor element and the said heat sink, The any one of Claims 1-6 characterized by the above-mentioned. 2. A semiconductor device according to item 1. A heat radiating plate (32) disposed opposite to the surface of the second metal member (22, 24) opposite to the semiconductor element (12, 14);
The solder is also interposed between the second metal member and the heat sink, to electrically connect the second metal member and the heat sink,
The second metal member is interposed between the heat dissipation plate and the semiconductor element, and electrically relays the semiconductor element and the heat dissipation plate,
The second metal member suppresses the overflow of the solder outside the annular second support portion (36b) during reflow of the solder (30) that connects the second metal member and the semiconductor element. And a through hole (52) provided through a region inside the second support portion on the semiconductor element side surface and the surface on the heat radiating plate side. The semiconductor device described.   At least one of the second metal member (22, 24) and the heat radiating plate (32) protrudes toward the other side in order to secure a solder thickness between the second metal member and the heat radiating plate. The semiconductor device according to claim 7, further comprising a protrusion.   The heat radiating plate (32) has a groove (32c) provided in an annular shape so as to surround the connection region in order to accommodate the solder overflowing from the connection region with the solder (30) during reflow. The semiconductor device according to claim 1, wherein: A method of manufacturing a semiconductor device according to claim 7,
As the first metal member (18) and the second metal member (22, 24), one having the first support portion (36a) and the other having the second support portion (36b) is prepared. A preparation process to
The solder (16) between the semiconductor element (12, 14) and the first metal member and the solder (20) between the semiconductor element and the second metal member are reflowed to form the first metal member. A first reflow step of forming a connection body (44) in which the semiconductor element and the second metal member are integrated;
In a state where the connection body is disposed on the heat sink so that the second metal member faces the heat sink (32) and is pressurized from the first metal member side, the second metal member and the A second reflow step of reflowing each solder including the solder (30) between the heat sink;
With
In the second reflow step, the first support portion and the second support portion are brought into contact with the semiconductor element by pressurization to correct warpage of the semiconductor element, and pressurization is continued even during cooling after reflow. Thus, the method of manufacturing a semiconductor device is characterized in that the warpage of the semiconductor element is suppressed.   In the second reflow step, the surface of the heat radiating plate (32) opposite to the second metal member (22, 24) and the first metal member (18) are brought into contact with the heat radiating plate by the pressurization. The method of manufacturing a semiconductor device according to claim 11, wherein a jig (46) that keeps the first metal member at a predetermined distance is used.

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