JP2009224560A - Semiconductor device and production method therefor - Google Patents

Semiconductor device and production method therefor Download PDF

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JP2009224560A
JP2009224560A JP2008067426A JP2008067426A JP2009224560A JP 2009224560 A JP2009224560 A JP 2009224560A JP 2008067426 A JP2008067426 A JP 2008067426A JP 2008067426 A JP2008067426 A JP 2008067426A JP 2009224560 A JP2009224560 A JP 2009224560A
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heat radiating
semiconductor chip
radiating plate
bonding wire
heat
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Tomomi Okumura
知巳 奥村
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Denso Corp
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Denso Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which consists of a semiconductor chip connected to a bonding wire and sandwiched between a pair of heat sinks, and can avoid contact of the bonding wire with heat sinks located at a side of the bonding wire even if an opposite interval between both heat sinks is made narrow without using a block for securing the interval. <P>SOLUTION: The loop-like bonding wire 8 projects in a direction where the bonding wire is detached from one face of the semiconductor chip 1. An opposed faces 3a, opposing one face of the semiconductor chip 1 on a first heat sink 3, is located closer to one face of the semiconductor chip 1 than a top part 8a of the bonding wire 8. An opening part 3d is an opening part opposite to the bonding wire 8 of the opposed faces 3a of the first heat sink 3. A part on the top side 8a of the bonding wire 8 is set in the opening part 3d in the state apart from the first heat sink 3. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、ボンディングワイヤが接続された半導体チップを一対の放熱板によって挟んでなる半導体装置、および、そのような半導体装置の製造方法に関する。   The present invention relates to a semiconductor device in which a semiconductor chip to which a bonding wire is connected is sandwiched between a pair of heat sinks, and a method for manufacturing such a semiconductor device.

従来より、この種の半導体装置としては、半導体チップの一面側に第１の放熱板を設け、半導体チップの一面とは反対側の他面側に第２の放熱板を設け、これら両放熱板により半導体チップを挟むとともに、半導体チップの一面にボンディングワイヤを接続してなるものが提案されている（たとえば、特許文献１、２参照）。   Conventionally, as this type of semiconductor device, a first heat radiating plate is provided on one surface side of a semiconductor chip, and a second heat radiating plate is provided on the other surface side opposite to the one surface of the semiconductor chip. Has been proposed in which a semiconductor chip is sandwiched and a bonding wire is connected to one surface of the semiconductor chip (see, for example, Patent Documents 1 and 2).

ここで、ボンディングワイヤは、半導体チップの一面から離れる方向、すなわち半導体チップの一面から第１の放熱板に向かう方向に凸となったループ状をなしている。そこで、従来では、ワイヤの頂部側と第１の放熱板との接触を回避して、ワイヤの高さを確保するために、半導体チップの一面と第１の放熱板との間に、厚さを確保するためのブロックを介在して配置させている。
特許第３５９９０５７号公報 特開２００５−１３６０１８号公報 Here, the bonding wire has a loop shape that is convex in a direction away from one surface of the semiconductor chip, that is, in a direction from one surface of the semiconductor chip toward the first heat radiation plate. Therefore, conventionally, in order to avoid the contact between the top side of the wire and the first heat radiating plate and secure the height of the wire, the thickness between the one surface of the semiconductor chip and the first heat radiating plate is reduced. It is arranged with a block for ensuring.
Japanese Patent No. 3599057 JP 2005-136018 A

半導体装置においては、体格の小型化が要望されているが、体格の小型化のためには、上記厚さ確保用のブロックをなくすことが考えられる。しかし、この場合、ボンディングワイヤと第１の放熱板とが接触しやすくなり、ボンディングワイヤの高さの確保が困難になる。   In semiconductor devices, there is a demand for downsizing the physique, but in order to downsize the physique, it is conceivable to eliminate the block for securing the thickness. However, in this case, the bonding wire and the first heat radiating plate easily come into contact with each other, and it is difficult to ensure the height of the bonding wire.

本発明は、上記問題に鑑みてなされたものであり、ボンディングワイヤが接続された半導体チップを一対の放熱板によって挟んでなる半導体装置において、厚さ確保用のブロックを用いずに両放熱板の対向間隔を狭くしても、ボンディングワイヤ側に位置する放熱板と当該ワイヤとの接触を回避できるようにすることを目的とする。   The present invention has been made in view of the above problems, and in a semiconductor device in which a semiconductor chip to which a bonding wire is connected is sandwiched between a pair of heat sinks, both heat sinks are used without using a block for securing the thickness. It is an object of the present invention to avoid contact between a heat radiating plate located on the bonding wire side and the wire even when the facing interval is narrowed.

上記目的を達成するため、請求項１に記載の発明では、ボンディングワイヤ（８）を、半導体チップ（１）の一面から離れる方向に凸となったループ状をなすものとし、第１の放熱板（３）における半導体チップ（１）の一面と対向する対向面（３ａ）を、ボンディングワイヤ（８）の頂部（８ａ）よりも半導体チップ（１）の一面に近くに位置させ、第１の放熱板（３）の対向面（３ａ）のうちボンディングワイヤ（８）に対向する部位に開口した開口部（３ｄ）を設け、ボンディングワイヤ（８）の頂部（８ａ）側の部位を、第１の放熱板（３）とは離れた状態で開口部（３ｄ）に入り込ませたことを特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, the bonding wire (8) has a loop shape protruding in a direction away from one surface of the semiconductor chip (1), and the first heat radiating plate. The opposing surface (3a) facing the one surface of the semiconductor chip (1) in (3) is positioned closer to the one surface of the semiconductor chip (1) than the top (8a) of the bonding wire (8), and the first heat dissipation An opening (3d) that opens to a portion of the opposing surface (3a) of the plate (3) that faces the bonding wire (8) is provided, and the portion on the top (8a) side of the bonding wire (8) It is characterized in that it enters the opening (3d) in a state of being separated from the heat sink (3).

それによれば、厚さ確保用のブロックを用いずに第１の放熱板（３）と第２の放熱板（４）との対向間隔を狭くしても、ボンディングワイヤ（８）側に位置する第１の放熱板（３）と当該ワイヤ（８）との接触を回避することができる。   According to this, even if the facing distance between the first heat radiating plate (3) and the second heat radiating plate (4) is narrowed without using the block for securing the thickness, it is located on the bonding wire (8) side. Contact between the first heat radiating plate (3) and the wire (8) can be avoided.

ここで、請求項２に記載の発明のように、開口部（３ｄ）を、第１の放熱板（３）の対向面（３ａ）側から第１の放熱板（３）の厚さ方向に貫通する切り欠きもしくは穴であるものにできる。   Here, as in the invention described in claim 2, the opening (3d) is formed in the thickness direction of the first heat radiating plate (3) from the facing surface (3a) side of the first heat radiating plate (3). It can be a notch or hole that penetrates.

また、このとき、請求項３に記載の発明のように、第１の放熱板（３）における対向面（３ｄ）とは反対の面側に、外部に放熱を行う放熱面（３ｂ）を設け、ボンディングワイヤ（８）の頂部（８ａ）側の部位を、開口部（３ｄ）に入り込ませているが、第１の放熱板（１）における対向面（３ａ）と放熱面（３ｂ）との間に留めたものにできる。   Further, at this time, as in the invention described in claim 3, a heat radiating surface (3b) for radiating heat to the outside is provided on the surface of the first heat radiating plate (3) opposite to the facing surface (3d). The portion on the top (8a) side of the bonding wire (8) is inserted into the opening (3d), but the opposing surface (3a) and the heat radiating surface (3b) of the first heat radiating plate (1). Can be in the middle.

それによれば、第１の放熱板（３）の放熱面（３ｂ）に、外部の冷却部材（Ｋ）を接触させるときに、当該冷却部材（Ｋ）がボンディングワイヤ（８）に接触することがなくなり、好ましい。   According to this, when the external cooling member (K) is brought into contact with the heat radiating surface (3b) of the first heat radiating plate (3), the cooling member (K) may come into contact with the bonding wire (8). It disappears and is preferable.

また、請求項４に記載の発明のように、開口部（３ｄ）を、第１の放熱板（３）の対向面（３ａ）よりも当該第１の放熱板（３）の厚さ方向に凹んだものとしてもよい。   Moreover, like invention of Claim 4, an opening part (3d) is made into the thickness direction of the said 1st heat sink (3) rather than the opposing surface (3a) of a 1st heat sink (3). It may be recessed.

また、請求項５に記載の発明では、半導体チップ（１）の一面と第１の放熱板（３）とを、はんだ（５ａ）を介して接合し、半導体チップ（１）の一面のうちの周辺部の全周に、半導体チップ（１）の一面と他面との電気絶縁性を確保するための絶縁材料よりなる耐圧保持部（１ａ）を設け、この耐圧保持部（１ａ）の少なくとも一部を半導体チップ（１）の一面上に突出した突出部（１ｂ）とし、この突出部（１ｂ）を、半導体チップ（１）の一面と第１の放熱板（３）との間に介在するはんだ（５ａ）の厚さを保持するスペーサとして構成したことを特徴としている。   Moreover, in invention of Claim 5, the 1st surface of a semiconductor chip (1) and the 1st heat sink (3) are joined via solder (5a), Of the 1 surface of a semiconductor chip (1), A pressure-resistant holding portion (1a) made of an insulating material for ensuring electrical insulation between one surface and the other surface of the semiconductor chip (1) is provided on the entire periphery of the peripheral portion, and at least one of the pressure-resistant holding portions (1a) is provided. The protrusion is a protrusion (1b) protruding on one surface of the semiconductor chip (1), and the protrusion (1b) is interposed between the one surface of the semiconductor chip (1) and the first heat radiating plate (3). It is characterized by being configured as a spacer for maintaining the thickness of the solder (5a).

このように、半導体チップ（１）の一面と第１の放熱板（３）とを、はんだ（５ａ）を介して接合した場合には、第１の放熱板（３）と第２の放熱板（４）との対向間隔を狭くした構成では、もし、当該はんだ（５ａ）の厚さが薄かったり、両放熱板が傾いて組み付けられたりすると、当該はんだ（５ａ）のクラックが発生するおそれがある。さらに、対向する放熱板（３、４）の間が狭くなると、冶具を使用しても、当該はんだ（５ａ）の厚さの管理が難しいものとなる。   As described above, when the one surface of the semiconductor chip (1) and the first heat radiating plate (3) are joined via the solder (5a), the first heat radiating plate (3) and the second heat radiating plate. In the configuration in which the facing distance from (4) is narrowed, if the thickness of the solder (5a) is thin, or if both heat sinks are tilted and assembled, the solder (5a) may be cracked. is there. Furthermore, when the space between the opposing heat sinks (3, 4) becomes narrow, it becomes difficult to manage the thickness of the solder (5a) even if a jig is used.

このような点を考慮して、さらに請求項５の発明では、半導体チップ（１）の一面のうちの周辺部の全周に設けられている半導体チップ（１）の一面と他面との電気絶縁性を確保するための耐圧保持部（１ａ）を利用し、この耐圧保持部（１ａ）の少なくとも一部を、半導体チップ（１）の一面上に突出した突出部（１ｂ）とし、当該突出部（１ｂ）を、はんだ（５ａ）の厚さを保持するスペーサとして構成している。   In consideration of such points, in the invention of claim 5, the electrical property between one surface of the semiconductor chip (1) provided on the entire periphery of the peripheral portion of the one surface of the semiconductor chip (1) and the other surface. Using the pressure-resistant holding portion (1a) for ensuring insulation, at least a part of the pressure-resistant holding portion (1a) is a protruding portion (1b) protruding on one surface of the semiconductor chip (1), and the protruding portion The part (1b) is configured as a spacer for maintaining the thickness of the solder (5a).

そのため、両放熱板（３、４）の対向間隔を狭くしても、半導体チップ（１）の一面と第１の放熱板（３）との間のはんだ（５ａ）の厚さを確保できるので当該対向間隔を精度よく保持しやすくなる。   Therefore, even if the facing distance between the heat radiating plates (3, 4) is narrowed, the thickness of the solder (5a) between one surface of the semiconductor chip (1) and the first heat radiating plate (3) can be secured. It becomes easy to maintain the said opposing space | interval accurately.

さらに、請求項６に記載の発明のように、第１の放熱板（３）側だけでなく、半導体チップ（１）の他面と第２の放熱板（４）とも、はんだ（５ｂ）を介して接合した場合には、半導体チップ（１）の他面のうち、半導体チップ（１）の一面に設けられている突出部（１ｂ）と同じ位置に、半導体チップ（１）の他面と第２の放熱板（４）との間に介在するはんだ（５ｂ）の厚さを保持する電気絶縁性のスペーサ（１ｃ）を設けてもよい。   Further, as in the invention described in claim 6, not only the first heat radiating plate (3) side but also the other surface of the semiconductor chip (1) and the second heat radiating plate (4) are provided with solder (5b). The other surface of the semiconductor chip (1) and the other surface of the semiconductor chip (1) at the same position as the protrusion (1b) provided on one surface of the semiconductor chip (1). An electrically insulating spacer (1c) that maintains the thickness of the solder (5b) interposed between the second heat radiating plate (4) may be provided.

それによれば、第２の放熱板（４）側のはんだ（５ｂ）についても、はんだ厚さを精度良く確保できる。また、半導体チップ（１）の両面にて同じ位置に、スペーサを設けることになるため、半導体チップ（１）の反りを抑制する点で好ましい。   According to this, also for the solder (5b) on the second radiator plate (4) side, it is possible to ensure the solder thickness with high accuracy. Moreover, since the spacer is provided at the same position on both surfaces of the semiconductor chip (1), it is preferable in terms of suppressing warpage of the semiconductor chip (1).

また、請求項７に記載の発明は、上記請求項２に記載の半導体装置のように、開口部（３ｄ）を第１の放熱板（３）の厚さ方向に貫通する切り欠きもしくは穴とした半導体装置を製造する半導体装置の製造方法である。   Further, according to a seventh aspect of the present invention, the semiconductor device according to the second aspect has a notch or a hole penetrating the opening (3d) in the thickness direction of the first heat radiating plate (3). This is a method for manufacturing a semiconductor device.

すなわち、本製造方法においては、開口部（３ｄ）が形成された第１の放熱板（３）を半導体チップ（１）の一面側に設け、第２の放熱板（４）を半導体チップ（１）の他面側に設け、これら両放熱板（３、４）により半導体チップ（１）を挟んだ後、第１の放熱板（３）の開口部（３ｄ）を介して半導体チップ（１）の一面にボンディングワイヤ（８）を接続することを特徴とする。   That is, in this manufacturing method, the first heat radiating plate (3) in which the opening (3d) is formed is provided on one surface side of the semiconductor chip (1), and the second heat radiating plate (4) is provided on the semiconductor chip (1). ) Provided on the other surface side and sandwiching the semiconductor chip (1) by these heat radiating plates (3, 4), then the semiconductor chip (1) through the opening (3d) of the first heat radiating plate (3). A bonding wire (8) is connected to one surface of the substrate.

上記請求項２のように、開口部（３ｄ）が第１の放熱板（３）の厚さ方向に貫通するものである場合には、両放熱板（３、４）で半導体チップ（１）を挟んだ後であっても、当該開口部（３ｄ）上に半導体チップ（１）が露出するので、その露出部分にワイヤボンディングを行うことができる。   When the opening (3d) penetrates in the thickness direction of the first heat radiating plate (3) as in claim 2, the semiconductor chip (1) is formed by both heat radiating plates (3, 4). Even after sandwiching the semiconductor chip, the semiconductor chip (1) is exposed on the opening (3d), so that wire bonding can be performed on the exposed portion.

そのため、本製造方法によれば、上記請求項２の半導体装置を適切に製造できるとともに、ボンディングワイヤ（８）を半導体チップ（１）に接続しない状態で、半導体チップ（１）と両放熱板（３、４）との組み付けが可能になり、当該組み付けの簡略化が期待できる。   Therefore, according to the present manufacturing method, the semiconductor device of claim 2 can be appropriately manufactured, and the semiconductor chip (1) and the two heat sinks (in the state where the bonding wire (8) is not connected to the semiconductor chip (1)). 3 and 4) can be assembled, and simplification of the assembly can be expected.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係る半導体装置１００の概略構成を示す図であり、（ａ）は概略平面図、（ｂ）は同半導体装置１００のＡ−Ａ一点鎖線に沿った概略断面図である。この半導体装置１００は、たとえば自動車などの車両に搭載され、車両用電子装置を駆動するための装置として適用されるものである。 (First embodiment)
1A and 1B are diagrams illustrating a schematic configuration of a semiconductor device 100 according to the first embodiment of the present invention, where FIG. 1A is a schematic plan view, and FIG. 1B is along the AA chain line of the semiconductor device 100. It is a schematic sectional drawing. The semiconductor device 100 is mounted on a vehicle such as an automobile and is applied as a device for driving a vehicle electronic device.

図１に示されるように、本半導体装置１００は、平面的に配置された２個の半導体素子１、２を備える。本例では、第１の半導体素子１はＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）１であり、第２の半導体素子２は、ＦＷＤ（フライホイールダイオード）２である。   As shown in FIG. 1, the semiconductor device 100 includes two semiconductor elements 1 and 2 arranged in a plane. In this example, the first semiconductor element 1 is an IGBT (Insulated Gate Bipolar Transistor) 1 and the second semiconductor element 2 is an FWD (flywheel diode) 2.

このＩＧＢＴ１は、本半導体装置１００における半導体チップとして構成されているものであり、公知の半導体プロセスにより形成されるものである。ＩＧＢＴ１は、シリコン半導体などよりなり、ここでは矩形板状をなす。   The IGBT 1 is configured as a semiconductor chip in the semiconductor device 100 and is formed by a known semiconductor process. The IGBT 1 is made of a silicon semiconductor or the like, and here has a rectangular plate shape.

そして、これら両半導体素子１、２の両面は、当該半導体素子１、２の電極および放熱部材として機能する一対の放熱板３、４にて挟まれている。これら放熱板３、４は、銅合金もしくはアルミ合金等の熱伝導性および電気伝導性に優れた金属によって構成されており、図１に示されるように、実質的に矩形板状をなす。   The both surfaces of both semiconductor elements 1 and 2 are sandwiched between a pair of heat dissipation plates 3 and 4 that function as electrodes and heat dissipation members of the semiconductor elements 1 and 2. These heat sinks 3 and 4 are made of a metal having excellent thermal conductivity and electrical conductivity, such as a copper alloy or an aluminum alloy, and have a substantially rectangular plate shape as shown in FIG.

ここで、一対の放熱板３、４のうち第１の放熱板３は、ＩＧＢＴ１の一面（図１（ｂ）中の上面）側に設けられ、第２の放熱板４は、ＩＧＢＴ１の一面とは反対側の他面（図１（ｂ）の下面）側に設けられている。それにより、両放熱板３、４は、半導体素子１、２を挟むように対向して配置されている。   Here, the 1st heat sink 3 is provided in the one surface (upper surface in FIG.1 (b)) side of IGBT1 among a pair of heat sinks 3 and 4, and the 2nd heat sink 4 is one surface of IGBT1. Is provided on the other surface (the lower surface in FIG. 1B) on the opposite side. Thereby, both the heat sinks 3 and 4 are arrange | positioned so that the semiconductor elements 1 and 2 may be pinched | interposed.

そして、ＩＧＢＴ１の一面と第１の放熱板３との間、ＩＧＢＴ１の他面と第２の放熱板４との間は、それぞれ第１のはんだ５ａ、第２のはんだ５ｂによって電気的・熱的に接続されている。また、図示しないが、ＦＷＤ２と両放熱板３、４との間も、ＩＧＢＴ１と同様に、はんだを介して接続されている。   Then, between the one surface of the IGBT 1 and the first heat radiating plate 3, and between the other surface of the IGBT 1 and the second heat radiating plate 4, electrical and thermal are caused by the first solder 5 a and the second solder 5 b, respectively. It is connected to the. Moreover, although not shown in figure, between FWD2 and both the heat sinks 3 and 4, similarly to IGBT1, it is connected via the solder.

ここで、はんだ５ａ、５ｂとしては、特に限定されるものではないが、鉛フリーはんだなどが用いられる。たとえば、鉛フリーはんだとしては、Ｓｎ−Ａｇ−Ｃｕ系はんだやＳｎ−Ｎｉ−Ｃｕ系はんだ等を採用することができる。   Here, the solders 5a and 5b are not particularly limited, but lead-free solder or the like is used. For example, Sn-Ag-Cu solder, Sn-Ni-Cu solder, or the like can be used as the lead-free solder.

そして、図１に示されるように、本実施形態の半導体装置１００においては、半導体素子１、２を挟み込んだ一対の放熱板３、４が、モールド樹脂６にて封止されている。このモールド樹脂６はエポキシ系樹脂などからなり、型成形によって形成されたものである。   As shown in FIG. 1, in the semiconductor device 100 of this embodiment, the pair of heat sinks 3 and 4 sandwiching the semiconductor elements 1 and 2 are sealed with a mold resin 6. This mold resin 6 is made of epoxy resin or the like, and is formed by molding.

また、図１に示されるように、一対の放熱板３、４のそれぞれにおいて、半導体素子１、２と対向する対向面３ａ、４ａとは反対側の面３ｂ、４ｂが、モールド樹脂６から露出している。このモールド樹脂６から露出する各放熱板３、４の面３ｂ、４ｂは、放熱面３ｂ、４ｂとされている。   Further, as shown in FIG. 1, in each of the pair of heat sinks 3 and 4, surfaces 3 b and 4 b opposite to the facing surfaces 3 a and 4 a facing the semiconductor elements 1 and 2 are exposed from the mold resin 6. is doing. The surfaces 3b and 4b of the heat radiation plates 3 and 4 exposed from the mold resin 6 are heat radiation surfaces 3b and 4b.

そして、図１（ｂ）に示されるように、各放熱板３、４の放熱面３ｂ、４ｂには、アルミや銅などよりなる外部の冷却部材Ｋが接触されるようになっている。このような冷却部材としては、通常、内部に冷却水が流通可能なアルミや銅などの部材が使用される。   As shown in FIG. 1B, an external cooling member K made of aluminum, copper, or the like is brought into contact with the heat radiating surfaces 3b, 4b of the heat radiating plates 3, 4. As such a cooling member, a member such as aluminum or copper in which cooling water can circulate is usually used.

そして、各放熱板３、４と冷却部材Ｋとの間で熱交換可能となっている。これにより、本半導体装置１００は、各半導体素子１、２の両面のそれぞれにて、第１の放熱板３、第２の放熱板４を介した放熱が行われる両面放熱型の構成となっている。   And heat exchange is possible between each heat sink 3, 4 and the cooling member K. As a result, the semiconductor device 100 has a double-sided heat radiation type structure in which heat is radiated through the first heat radiating plate 3 and the second heat radiating plate 4 on both surfaces of each of the semiconductor elements 1 and 2. Yes.

また、一対の放熱板３、４は、上記はんだを介して、両半導体素子１、２の各面における電極に電気的に接続されている。たとえば、一対の放熱板３、４は、それぞれＩＧＢＴ１のコレクタ側の電極およびＦＷＤ２のカソード側の電極、ＩＧＢＴ１のエミッタ側の電極およびＦＷＤ２のアノード側の電極となる。   The pair of heat sinks 3 and 4 are electrically connected to the electrodes on the respective surfaces of the two semiconductor elements 1 and 2 through the solder. For example, the pair of heat sinks 3 and 4 serve as the collector-side electrode of IGBT1, the cathode-side electrode of FWD2, the emitter-side electrode of IGBT1, and the anode-side electrode of FWD2.

ここで、半導体装置１００においては、一対の放熱板３、４のそれぞれの一部が、矩形の辺部からモールド樹脂６の外部まで突出した端子３ｃ、４ｃとして構成されており、この端子３ｃ、４ｃは外部と電気的に接続されるようになっている。   Here, in the semiconductor device 100, a part of each of the pair of heat sinks 3 and 4 is configured as terminals 3c and 4c protruding from the rectangular side portion to the outside of the mold resin 6, and the terminals 3c, 4c is electrically connected to the outside.

また、図１に示されるように、半導体装置１００においては、第２の放熱板４の周囲に、複数本のリード部７が設けられている。これらリード部７は、ここでは、半導体チップであるＩＧＢＴ１の制御用の端子として機能するものであり、一部がモールド樹脂６に封止され、残部が外部と接続されるためにモールド樹脂６から露出している。   Further, as shown in FIG. 1, in the semiconductor device 100, a plurality of lead portions 7 are provided around the second heat radiating plate 4. Here, these lead portions 7 function as control terminals for the IGBT 1 which is a semiconductor chip. A part of the lead portions 7 is sealed with the mold resin 6 and the remaining portion is connected to the outside. Exposed.

そして、ＩＧＢＴ１は、その一面すなわち第１の放熱板３側の面にてボンディングワイヤ８を介して、リード部７と電気的・機械的に接続されている。このボンディングワイヤ８は、Ａｕ（金）やＡｌ（アルミ）などよりなる一般的なワイヤボンディングにより形成されたものである。   The IGBT 1 is electrically and mechanically connected to the lead portion 7 via the bonding wire 8 on one surface thereof, that is, the surface on the first heat radiation plate 3 side. The bonding wire 8 is formed by general wire bonding made of Au (gold) or Al (aluminum).

ここで、図１（ｂ）に示されるように、ボンディングワイヤ８は、一般のものと同様、ＩＧＢＴ１の一面から離れる方向すなわちＩＧＢＴ１の一面から第１の放熱板３に向かう方向に凸となったループ状をなしている。   Here, as shown in FIG. 1B, the bonding wire 8 is convex in a direction away from one surface of the IGBT 1, that is, in a direction from the one surface of the IGBT 1 toward the first heat radiating plate 3, as in the general case. It has a loop shape.

また、第１の放熱板３におけるＩＧＢＴ１の一面と対向する対向面３ａは、ボンディングワイヤ８の頂部８ａよりもＩＧＢＴ１の一面に近い位置にある。この場合、従来の構成のままであれば、第１の放熱板３とボンディングワイヤ８の頂部８ａとが接触するが、本実施形態では、当該接触を回避すべく改良された構成となっている。   Further, the facing surface 3 a facing the one surface of the IGBT 1 in the first heat radiating plate 3 is located closer to the one surface of the IGBT 1 than the top portion 8 a of the bonding wire 8. In this case, if it is a conventional structure, the 1st heat sink 3 and the top part 8a of the bonding wire 8 will contact, However, In this embodiment, it is the structure improved in order to avoid the said contact. .

すなわち、本半導体装置１００においては、図１に示されるように、第１の放熱板３の対向面３ａのうちボンディングワイヤ８に対向する部位には、当該対向面３ａが除去されて開口した開口部３ｄが設けられている。   That is, in the present semiconductor device 100, as shown in FIG. 1, in the facing surface 3a of the first heat radiating plate 3, the opening facing the bonding wire 8 is formed by removing the facing surface 3a. A portion 3d is provided.

ここでは、開口部３ｄは、第１の放熱板３の対向面３ａから第１の放熱板３の厚さ方向に貫通する切り欠きである。より具体的には、この切り欠きは、第１の放熱板３の対向面３ａのうち外周端部からボンディングワイヤ８に対向する部位までが平面的に切り欠かれたものとされている。このような切り欠きは、プレス、切削、エッチングなどにより容易に形成される。   Here, the opening 3 d is a notch penetrating from the facing surface 3 a of the first heat radiating plate 3 in the thickness direction of the first heat radiating plate 3. More specifically, the notch is formed by planarly cutting from the outer peripheral end portion to the portion facing the bonding wire 8 in the facing surface 3 a of the first heat radiating plate 3. Such a notch is easily formed by pressing, cutting, etching or the like.

そして、図１に示されるように、ボンディングワイヤ８の頂部８ａ側の部位が、開口部３ｄに入り込んでいる。このとき、ボンディングワイヤ８の頂部８ａ側の部位は、開口部３ｄの開口縁部および内面のいずれにも接触しておらず、第１の放熱板３の対向面３ａよりも当該第１の放熱板３の内部側にて、ボンディングワイヤ８と第１の放熱板３とは離れた状態とされている。   And as FIG. 1 shows, the site | part of the top part 8a side of the bonding wire 8 has penetrated into the opening part 3d. At this time, the portion on the top portion 8a side of the bonding wire 8 is not in contact with any of the opening edge portion and the inner surface of the opening 3d, and the first heat radiation is more than the opposed surface 3a of the first heat radiation plate 3. The bonding wire 8 and the first heat radiating plate 3 are separated from each other on the inner side of the plate 3.

また、上述したように、第１の放熱板３における対向面３ａとは反対の面側には、冷却部材Ｋに接触して放熱を行う放熱面３ｂが設けられている。そして、ボンディングワイヤ８の頂部８ａ側の部位は、開口部３ｄに入り込んでいるものの、開口部３ｄを通り抜けて放熱面３ｄよりも突出するようなことはなく、開口部３ｄの内部に留まっている。それにより、ボンディング８と冷却部材Ｋとが離れて配置されている。   Further, as described above, the heat radiating surface 3 b that contacts the cooling member K and radiates heat is provided on the surface side of the first heat radiating plate 3 opposite to the facing surface 3 a. And although the site | part by the side of the top part 8a of the bonding wire 8 has penetrated into the opening part 3d, it does not protrude from the heat radiating surface 3d through the opening part 3d, but remains inside the opening part 3d. . Thereby, the bonding 8 and the cooling member K are spaced apart.

次に、本半導体装置１００の製造方法について述べる。本製造方法では、まず、第１の放熱板３と第２の放熱板４との間に、はんだ５ａ、５ｂを介して各半導体素子１、２を挟み、はんだ５ａ、５ｂをリフローさせて、各半導体素子１、２および両放熱板３、４をはんだ接合する。   Next, a method for manufacturing the semiconductor device 100 will be described. In this manufacturing method, first, the semiconductor elements 1 and 2 are sandwiched between the first radiator plate 3 and the second radiator plate 4 via the solders 5a and 5b, and the solders 5a and 5b are reflowed. Each semiconductor element 1 and 2 and both heat sinks 3 and 4 are soldered.

次に、ＩＧＢＴ１の外側にリード部７を配置する。ここで、本実施形態では、第１の放熱板３の開口部３ｄは、上述したように、ボンディングワイヤ８と対向する部位が第１の放熱板３の厚さ方向に貫通する切り欠きであるので、ＩＧＢＴ１の一面のうちボンディングワイヤ８が接続される部位は、当該開口部３ｄ上に臨んだ状態となっている。   Next, the lead portion 7 is disposed outside the IGBT 1. Here, in the present embodiment, the opening 3d of the first heat radiating plate 3 is a notch through which the portion facing the bonding wire 8 penetrates in the thickness direction of the first heat radiating plate 3 as described above. Therefore, the part to which the bonding wire 8 is connected on one surface of the IGBT 1 is in a state of facing the opening 3d.

そこで、本製造方法においては、ＩＧＢＴ１が両放熱板３、４に挟まれた状態のワークに対して、第１の放熱板３の放熱面３ｂ側から開口部３ｄを介して、ＩＧＢＴ１の一面にボンディングワイヤ８を接続する。この接続は、通常のワイヤボンディングツールにより行える。   Therefore, in the present manufacturing method, with respect to the work in a state where the IGBT 1 is sandwiched between both the heat radiating plates 3 and 4, the heat radiating surface 3 b side of the first heat radiating plate 3 is connected to one surface of the IGBT 1 through the opening 3 d. The bonding wire 8 is connected. This connection can be made with a normal wire bonding tool.

ここまでの工程により、上記図１においてモールド樹脂６を省略した状態のワークができあがる。その後、本製造方法では、このワークを金型に投入し、モールド樹脂６による封止を行う。   Through the steps up to here, a workpiece in which the mold resin 6 is omitted in FIG. 1 is completed. Thereafter, in this manufacturing method, the workpiece is put into a mold and sealed with a mold resin 6.

このモールド工程より、半導体素子１、２、放熱板３、４、リード部７およびボンディングワイヤ８がモールド樹脂６で封止されるとともに、放熱板３、４の放熱面３ｂ、４ｂはモールド樹脂６から露出する。以上が本実施形態の製造方法であり、こうして、上記図１に示される本実施形態の半導体装置１００ができあがる。   From this molding step, the semiconductor elements 1, 2, the radiator plates 3, 4, the lead portion 7 and the bonding wire 8 are sealed with the mold resin 6, and the radiator surfaces 3 b, 4 b of the radiator plates 3, 4 are molded resin 6. Exposed from. The manufacturing method of the present embodiment is as described above, and thus the semiconductor device 100 of the present embodiment shown in FIG. 1 is completed.

ところで、本実施形態によれば、第１の放熱板３に、ボンディングワイヤ８と当該第１の放熱板３との干渉を回避するための開口部３ｄを設けている。そのため、従来のような厚さ確保用のブロックを用いずに第１の放熱板３と第２の放熱板４との対向間隔を狭くしても、ボンディングワイヤ８側に位置する第１の放熱板３とボンディングワイヤ８との接触を回避することができる。   By the way, according to the present embodiment, the first heat radiating plate 3 is provided with the opening 3 d for avoiding the interference between the bonding wire 8 and the first heat radiating plate 3. For this reason, the first heat radiation located on the bonding wire 8 side can be achieved even if the facing distance between the first heat radiation plate 3 and the second heat radiation plate 4 is reduced without using the conventional thickness securing block. Contact between the plate 3 and the bonding wire 8 can be avoided.

また、本実施形態によれば、ボンディングワイヤ８の頂部８ａ側の部位は、第１の放熱板３の開口部３ｄの内部すなわち第１の放熱板３の厚さの範囲に留まっている。つまり、当該頂部８ａ側の部位は、開口部３ｄに入り込んでいるものの、第１の放熱板３の放熱面３ｂよりも外方に突出しておらず、第１の放熱板３の厚さ方向にて第１の放熱板３における対向面３ａと放熱面３ｂとの間に留まっている。   Further, according to the present embodiment, the portion of the bonding wire 8 on the top 8 a side remains in the opening 3 d of the first heat radiating plate 3, that is, within the thickness range of the first heat radiating plate 3. That is, the portion on the top 8a side enters the opening 3d, but does not protrude outward from the heat radiating surface 3b of the first heat radiating plate 3, and is in the thickness direction of the first heat radiating plate 3. The first heat radiating plate 3 remains between the facing surface 3a and the heat radiating surface 3b.

ここで、ボンディングワイヤ８の頂部８ａ側の部位は、当該開口部３ｄを通り抜けて、放熱面３ｂよりも突出していてもよいが、もし、ボンディングワイヤ８が放熱面３ｂより突出していると、当該放熱面３ｂに接触する冷却部材Ｋとボンディングワイヤ８とが接触してしまう。   Here, the portion of the bonding wire 8 on the top 8a side may pass through the opening 3d and protrude from the heat dissipation surface 3b, but if the bonding wire 8 protrudes from the heat dissipation surface 3b, The cooling member K and the bonding wire 8 that come into contact with the heat radiation surface 3b come into contact with each other.

その場合、ボンディングワイヤ８にダメージが付与されたり、ボンディングワイヤ８と冷却部材Ｋとの短絡が発生するなどの不具合が生じる可能性がある。その点、ボンディングワイヤ８を放熱面３ｂより突出させないことで、冷却部材Ｋとボンディングワイヤ８との接触を防止し、これら不具合が抑制される。   In that case, the bonding wire 8 may be damaged or a short circuit between the bonding wire 8 and the cooling member K may occur. In that respect, by preventing the bonding wire 8 from protruding from the heat radiating surface 3b, the contact between the cooling member K and the bonding wire 8 is prevented, and these problems are suppressed.

また、本実施形態の上記製造方法では、ＩＧＢＴ１の一面側、他面側に第１の放熱板３、第２の放熱板４を設け、これら両放熱板３、４によりＩＧＢＴ１を挟んだ後、第１の放熱板３の開口部３ｄを介してＩＧＢＴ１の一面にボンディングワイヤ８を接続するようにしている。   Further, in the manufacturing method of the present embodiment, the first heat radiating plate 3 and the second heat radiating plate 4 are provided on the one surface side and the other surface side of the IGBT 1, and after sandwiching the IGBT 1 by both the heat radiating plates 3 and 4, The bonding wire 8 is connected to one surface of the IGBT 1 through the opening 3d of the first heat radiating plate 3.

それによれば、ボンディングワイヤ８をＩＧＢＴ１に接続しない状態で、ＩＧＢＴ１と両放熱板３、４との組み付けが可能になり、当該組み付けの簡略化が期待できる。たとえば、従来の組み付け方法では、ワイヤ接続した後のＩＧＢＴ１を、取り扱うため、当該組み付け時にボンディングワイヤ８が切断するなどの恐れがあったが、本製造方法によれば、そのような問題が回避される。   According to this, it is possible to assemble the IGBT 1 and the two heat sinks 3 and 4 without connecting the bonding wire 8 to the IGBT 1, and expect simplification of the assembly. For example, in the conventional assembling method, since the IGBT 1 after wire connection is handled, there is a fear that the bonding wire 8 is cut during the assembling. However, according to the present manufacturing method, such a problem is avoided. The

（第２実施形態）
図２は、本発明の第２実施形態に係る半導体装置２００の概略構成を示す図であり、（ａ）は概略平面図、（ｂ）は同半導体装置２００のＢ−Ｂ一点鎖線に沿った概略断面図である。本半導体装置２００は、上記第１実施形態に比べて開口部３ｄを一部変形したところが相違するものであり、この相違点を中心に述べることにする。 (Second Embodiment)
2A and 2B are diagrams showing a schematic configuration of a semiconductor device 200 according to the second embodiment of the present invention, in which FIG. 2A is a schematic plan view, and FIG. 2B is along the BB dashed line of the semiconductor device 200. It is a schematic sectional drawing. The semiconductor device 200 is different from the first embodiment in that the opening 3d is partly deformed, and this difference will be mainly described.

上記第１実施形態の開口部３ｄは、第１の放熱板３の対向面３ａのうちボンディングワイヤ８に対向する部位を第１の放熱板３の厚さ方向に貫通する切り欠きであった。それに対して、本半導体装置２００の開口部３ｄは、図２に示されるように、第１の放熱板３の厚さ方向に貫通する穴、すなわち、第１の放熱板３の対向面３ａから放熱面３ｂ側まで貫通する穴である。このような穴としての開口部３ｄは、プレス、切削、エッチングなどにより容易に形成される。   The opening 3 d of the first embodiment is a notch that penetrates a portion of the facing surface 3 a of the first heat radiating plate 3 that faces the bonding wire 8 in the thickness direction of the first heat radiating plate 3. On the other hand, the opening 3d of the semiconductor device 200 is formed from a hole penetrating in the thickness direction of the first heat radiating plate 3, that is, from the facing surface 3a of the first heat radiating plate 3, as shown in FIG. It is a hole penetrating to the heat radiating surface 3b side. The opening 3d as such a hole is easily formed by pressing, cutting, etching, or the like.

ここで、本実施形態では、ボンディングワイヤ８の頂部８ａ側の部位が、第１の放熱板３とは離れた状態で開口部３ｄに入り込んでいるが、ボンディングワイヤ８は、第１の放熱板３の対向面３ａ側から放熱面３ｂ側まで開口部３ｄを通り抜けることで、リード部７に接続されている。   Here, in this embodiment, although the site | part by the side of the top part 8a of the bonding wire 8 has penetrated into the opening part 3d in the state away from the 1st heat sink 3, the bonding wire 8 is the 1st heat sink. 3 is connected to the lead portion 7 by passing through the opening 3d from the facing surface 3a side to the heat radiating surface 3b side.

そして、本実施形態では、図２（ｂ）に示されるように、開口部３ｄにおける放熱面３ｂ側の開口縁部のうちボンディングワイヤ８が横切る部位を、当該放熱面３ｂよりも引っ込んだ面としている。それにより、ボンディングワイヤ８のうち開口部３ｄから放熱面３ｂ側まで通り抜けた部分を、当該放熱面３ｂよりも突出させずに第１の放熱板３の内部側に留めている。   And in this embodiment, as FIG.2 (b) shows, the site | part which the bonding wire 8 crosses among the opening edge parts by the side of the thermal radiation surface 3b in the opening part 3d is made into the surface which retracted rather than the said thermal radiation surface 3b. Yes. As a result, the portion of the bonding wire 8 that passes from the opening 3d to the heat radiating surface 3b side is held on the inner side of the first heat radiating plate 3 without protruding from the heat radiating surface 3b.

このような本実施形態の半導体装置２００も、上記第１実施形態と同様の製造方法により製造されるため、ボンディングワイヤ８をＩＧＢＴ１に接続しない状態で、ＩＧＢＴ１と両放熱板３、４との組み付けが可能になり、当該組み付けの簡略化が期待できる。   Since the semiconductor device 200 of this embodiment is also manufactured by the same manufacturing method as that of the first embodiment, the assembly of the IGBT 1 and the two heat sinks 3 and 4 without connecting the bonding wire 8 to the IGBT 1. Therefore, simplification of the assembly can be expected.

そして、上記第１実施形態と同様に、厚さ確保用のブロックを用いずに第１の放熱板３と第２の放熱板４との対向間隔を狭くしても、ボンディングワイヤ８側に位置する第１の放熱板３とボンディングワイヤ８との接触を回避することができる。   As in the first embodiment, even if the facing distance between the first heat radiating plate 3 and the second heat radiating plate 4 is reduced without using a thickness securing block, it is positioned on the bonding wire 8 side. Thus, contact between the first heat radiation plate 3 and the bonding wire 8 can be avoided.

また、本実施形態によっても、ボンディングワイヤ８の頂部８ａ側の部位は、開口部３ｄに入り込んでいるものの放熱面３ｂよりも突出しておらず、第１の放熱板１における対向面３ａと放熱面３ｂとの間に留まっているため、上記冷却部材Ｋとボンディングワイヤ８との接触を防止できる。   In addition, according to the present embodiment, the portion of the bonding wire 8 on the top 8a side enters the opening 3d but does not protrude from the heat radiating surface 3b, and the opposing surface 3a and the heat radiating surface of the first heat radiating plate 1 Since it remains between 3b, the contact with the said cooling member K and the bonding wire 8 can be prevented.

（第３実施形態）
図３は、本発明の第３実施形態に係る半導体装置３００の概略構成を示す図であり、（ａ）は概略平面図、（ｂ）は同半導体装置３００のＣ−Ｃ一点鎖線に沿った概略断面図である。 (Third embodiment)
3A and 3B are diagrams showing a schematic configuration of a semiconductor device 300 according to the third embodiment of the present invention, in which FIG. 3A is a schematic plan view, and FIG. 3B is along the CC dashed-dotted line of the semiconductor device 300. It is a schematic sectional drawing.

上記各実施形態では、開口部３ｄは、第１の放熱板３の対向面３ａから第１の放熱板３の厚さ方向に貫通する切り欠きもしくは穴であったが、本実施形態の半導体装置３００では、開口部３ｄは、第１の放熱板３の対向面３ａのうちボンディングワイヤ８に対向する部位を、当該対向面３ａよりも当該第１の放熱板３の厚さ方向に凹ませた凹部としたものであることが相違する。   In each of the above embodiments, the opening 3d is a notch or a hole penetrating from the facing surface 3a of the first heat radiating plate 3 in the thickness direction of the first heat radiating plate 3, but the semiconductor device of the present embodiment. In 300, the opening 3d has a portion of the facing surface 3a of the first heat radiating plate 3 facing the bonding wire 8 recessed from the facing surface 3a in the thickness direction of the first heat radiating plate 3. The difference is that it is a recess.

具体的には、この凹部は、第１の放熱板３の対向面３ａ側から凹むことにより第１の放熱板３における当該凹部以外の部位よりも薄い薄肉部とされている。このような凹部としての開口部３ｄも、プレス、切削、エッチングなどにより容易に形成される。   Specifically, the concave portion is formed as a thin portion thinner than the portion other than the concave portion in the first heat radiating plate 3 by being dented from the facing surface 3 a side of the first heat radiating plate 3. The opening 3d as such a recess is also easily formed by pressing, cutting, etching, or the like.

そして、ここでも、ボンディングワイヤ８の頂部８ａ側の部位は、凹部としての開口部３ｄに入り込んではいるものの、当該凹部の開口縁部、側面、底部とは離れている。つまり、ボンディングワイヤ８と第１の放熱板３とは離れている。   Also here, the portion of the bonding wire 8 on the top 8a side enters the opening 3d as a recess, but is separated from the opening edge, side, and bottom of the recess. That is, the bonding wire 8 and the first heat radiating plate 3 are separated.

また、本実施形態においても、ボンディングワイヤ８は、開口部３ｄの底部とは離れていることによって、第１の放熱板１における対向面３ａと放熱面３ｂとの間に留まっており、第１の放熱板３の放熱面３ｂより突出していない。   Also in this embodiment, the bonding wire 8 stays between the opposing surface 3a and the heat radiating surface 3b of the first heat radiating plate 1 by being away from the bottom of the opening 3d, It does not protrude from the heat radiating surface 3 b of the heat radiating plate 3.

そして、本半導体装置３００においても、第１の放熱板３とボンディングワイヤ８との接触を回避できること、上記冷却部材Ｋとボンディングワイヤ８との接触を防止できることは、上記同様である。   In the semiconductor device 300 as well, the contact between the first heat radiating plate 3 and the bonding wire 8 can be avoided, and the contact between the cooling member K and the bonding wire 8 can be prevented in the same manner as described above.

また、本半導体装置３００では、開口部３ｄが第１の放熱板３の厚さ方向に貫通するものではないため、本半導体装置３００の製造方法は、従来のこの種の半導体装置に準じたものとなる。すなわち、第２の放熱板４に、第２のはんだ５ｂを介して各半導体素子１、２を搭載し、ＩＧＢＴ１とリード部７とのワイヤボンディングを行った後、第１のはんだ５ａを介して第１の放熱板３を搭載する。その後、はんだリフローを行い、モールド樹脂６による封止を行うことにより本半導体装置３００ができあがる。   Further, in the present semiconductor device 300, since the opening 3d does not penetrate in the thickness direction of the first heat radiating plate 3, the manufacturing method of the semiconductor device 300 conforms to this type of conventional semiconductor device. It becomes. That is, the semiconductor elements 1 and 2 are mounted on the second heat radiating plate 4 via the second solder 5b, wire bonding between the IGBT 1 and the lead portion 7 is performed, and then the first solder 5a is interposed. The first heat sink 3 is mounted. Then, the semiconductor device 300 is completed by performing solder reflow and sealing with the mold resin 6.

（第４実施形態）
図４は、本発明の第４実施形態に係る半導体装置４００の概略断面構成を示す図である。また、図５は、本半導体装置４００中のＩＧＢＴ１の一面側の概略平面構成を示す図であり、（ａ）は第１の例、（ｂ）は第２の例を示す。なお、図５において後述する突出部１ｂの表面には、識別のため便宜上、ハッチングを施してある。ここでは、上記第１実施形態との相違点を中心に述べる。 (Fourth embodiment)
FIG. 4 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 400 according to the fourth embodiment of the present invention. FIG. 5 is a diagram showing a schematic plan configuration of one surface side of the IGBT 1 in the semiconductor device 400, where (a) shows a first example and (b) shows a second example. In addition, the surface of the protrusion part 1b mentioned later in FIG. 5 is hatched for convenience for identification. Here, the difference from the first embodiment will be mainly described.

本半導体装置４００においても、上記同様に、ＩＧＢＴ１の一面と第１の放熱板３とは、第１のはんだ５ａを介して接合されている。ここで、本実施形態では、図４に示されるように、ＩＧＢＴ１の一面と第１の放熱板３との間には、第１のはんだ５ａの厚さを保持するスペーサとしての突出部１ｂが設けられている。このスペーサとしての突出部１ｂは、ＩＧＢＴ１の一面に設けられたものである。   Also in the semiconductor device 400, similarly to the above, one surface of the IGBT 1 and the first heat radiating plate 3 are joined via the first solder 5a. Here, in this embodiment, as shown in FIG. 4, a protrusion 1 b as a spacer that holds the thickness of the first solder 5 a is provided between one surface of the IGBT 1 and the first heat radiating plate 3. Is provided. The protruding portion 1b as the spacer is provided on one surface of the IGBT 1.

図５（ａ）に示されるように、ＩＧＢＴ１の一面のうちの周辺部には、ガードリング１ａが全周に渡って環状に設けられており、上記突出部１ｂは、このガードリング１ａを利用したものである。   As shown in FIG. 5 (a), a guard ring 1a is annularly provided on the periphery of one surface of the IGBT 1, and the protruding portion 1b uses the guard ring 1a. It is a thing.

ガードリング１ａは、耐圧保持部として、通常の半導体チップに設けられる絶縁材料よりなるものであり、ここでは、ＩＧＢＴ１の一面と他面との電気絶縁性を確保するものとして構成されている。もし、ガードリング１ａが無い場合には、ＩＧＢＴ１の外周端面を介して一面と他面とが短絡する恐れがあるが、ガードリング１ａを設ければ、絶縁耐圧が保持される。   The guard ring 1a is made of an insulating material provided in a normal semiconductor chip as a withstand voltage holding portion, and here is configured to ensure electrical insulation between one surface of the IGBT 1 and the other surface. If the guard ring 1a is not provided, one surface and the other surface may be short-circuited via the outer peripheral end surface of the IGBT 1. However, if the guard ring 1a is provided, the withstand voltage is maintained.

このガードリング１ａは、ＩＧＢＴ１の一面に、ポリイミドなどの絶縁性樹脂を塗布・硬化したり、酸化シリコンなどの無機絶縁材料をスパッタや蒸着したりすることにより、形成される。   The guard ring 1a is formed by applying and curing an insulating resin such as polyimide on one surface of the IGBT 1 or sputtering or vapor-depositing an inorganic insulating material such as silicon oxide.

ここで、図５（ａ）に示される第１の例では、矩形環状をなすガードリング１ａの全体がＩＧＢＴ１の一面上に突出した突出部１ｂとなっており、図５（ｂ）に示される第２の例では、矩形環状をなすガードリング１ａのうちの４隅部が、ＩＧＢＴ１の一面上に突出した突出部１ｂとなっている。本実施形態では、これら両例のどちらでもよい。   Here, in the first example shown in FIG. 5A, the entire guard ring 1a having a rectangular ring shape is a protruding portion 1b protruding on one surface of the IGBT 1, and is shown in FIG. 5B. In the second example, four corners of a rectangular ring-shaped guard ring 1 a are protruding portions 1 b that protrude on one surface of the IGBT 1. In this embodiment, both of these examples may be used.

そして、このＩＧＢＴ１の一面に設けられている突出部１ｂは、図４に示されるように、ＩＧＢＴ１の一面と第１の放熱板３とを支持し、第１のはんだ５ａの厚さを保持するスペーサとして機能する。具体的には、突出部１ｂの高さが第１のはんだ５ａの厚さに実質相当する。   And the protrusion part 1b provided in one surface of this IGBT1 supports the one surface of IGBT1, and the 1st heat sink 3 as FIG. 4 shows, and maintains the thickness of the 1st solder 5a. Functions as a spacer. Specifically, the height of the protrusion 1b substantially corresponds to the thickness of the first solder 5a.

このような突出部１ｂは、ガードリング１ａを絶縁性樹脂の塗布・硬化によって形成する場合には、突出部１ｂとなる部位にて樹脂厚さを厚くすることで形成される。また、ガードリング１ａを無機絶縁材料のスパッタや蒸着によって成膜する場合には、突出部１ｂとなる部位にて膜厚を大きくすれば、突出部１ｂを形成できる。   In the case where the guard ring 1a is formed by applying and curing an insulating resin, such a protruding portion 1b is formed by increasing the resin thickness at a portion that becomes the protruding portion 1b. When the guard ring 1a is formed by sputtering or vapor deposition of an inorganic insulating material, the protruding portion 1b can be formed by increasing the film thickness at the portion that becomes the protruding portion 1b.

このように、本実施形態によれば、ＩＧＢＴ１の一面の全外周に設けられているガードリング１ａを利用し、このガードリング１ａの全部もしくは一部をＩＧＢＴ１の一面上に突出させて突出部１ｂを構成している。   As described above, according to this embodiment, the guard ring 1a provided on the entire outer periphery of one surface of the IGBT 1 is used, and all or a part of the guard ring 1a is protruded on one surface of the IGBT 1 to thereby project the protruding portion 1b. Is configured.

そして、この突出部１ｂをスペーサとして、ＩＧＢＴ１と第１の放熱板３との間の第１のはんだ５ａの厚さを保持するようにしているため、両放熱板３、４の対向間隔を狭くしても、第１のはんだ５ａの厚さを精度良く確保できる。   And since this protrusion part 1b is used as a spacer and the thickness of the 1st solder 5a between IGBT1 and the 1st heat sink 3 is hold | maintained, the opposing space | interval of both the heat sinks 3 and 4 is narrowed. Even so, the thickness of the first solder 5a can be ensured with high accuracy.

なお、ガードリング１ａの一部が突出部１ｂとなっている構成としては、上記図５（ｂ）に示される４隅部の例に限定されるものではないことは、もちろんであり、たとえば、矩形環状のガードリング１ａの辺部の中間部に突出部を設けてもよい。また、本実施形態は、上記第１実施形態だけでなく、それ以外の上記各実施形態に適用可能である。   Of course, the configuration in which a part of the guard ring 1a is the protruding portion 1b is not limited to the example of the four corners shown in FIG. 5B, for example, You may provide a protrusion part in the intermediate part of the edge part of the rectangular annular guard ring 1a. The present embodiment is applicable not only to the first embodiment but also to the other embodiments described above.

（第５実施形態）
図６は、本発明の第５実施形態に係る半導体装置５００の概略断面構成を示す図である。本実施形態では、上記第４実施形態に対して、さらに、ＩＧＢＴ１の他面と第２の放熱板４との間に介在する第２のはんだ５ｂについても、はんだ厚さを保持するスペーサ１ｃを設けたものである。 (Fifth embodiment)
FIG. 6 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 500 according to the fifth embodiment of the present invention. In the present embodiment, in addition to the fourth embodiment, the spacer 1c that holds the solder thickness is also provided for the second solder 5b interposed between the other surface of the IGBT 1 and the second heat radiating plate 4. It is provided.

このスペーサ１ｃは、半導体チップとしてのＩＧＢＴ１の他面に設けられた電気絶縁性の部材であり、当該他面より突出する突起状のものである。このスペーサ１ｃが、ＩＧＢＴ１の他面と第２の放熱板４とを支持し、第２のはんだ５ｂの厚さを保持する。そして、このスペーサ１ｃの高さが第２のはんだ５ｂの厚さに実質相当する。   The spacer 1c is an electrically insulating member provided on the other surface of the IGBT 1 as a semiconductor chip, and has a protruding shape protruding from the other surface. The spacer 1c supports the other surface of the IGBT 1 and the second heat radiating plate 4, and maintains the thickness of the second solder 5b. The height of the spacer 1c substantially corresponds to the thickness of the second solder 5b.

このスペーサ１ｃは、ＩＧＢＴ１の他面に対して、電気絶縁性樹脂を塗布・硬化したり、無機絶縁材料のスパッタや蒸着によって成膜したりすることにより形成される。ここで、スペーサ１ｃは、ＩＧＢＴ１の一面に設けられている突出部１ｂと同じ位置に、設けられている。   The spacer 1c is formed by applying / curing an electrically insulating resin on the other surface of the IGBT 1 or forming a film by sputtering or vapor deposition of an inorganic insulating material. Here, the spacer 1c is provided at the same position as the protruding portion 1b provided on one surface of the IGBT 1.

具体的には、ＩＧＢＴ１の一面における上記突出部１ｂの形成位置が上記図５のようなものである場合、当該図５中の各例に対応して、ＩＧＢＴ１の他面におけるスペーサ１ｃの形成位置も、上記図５と同様のものとなる。   Specifically, when the formation position of the protruding portion 1b on one surface of the IGBT 1 is as shown in FIG. 5, the formation position of the spacer 1c on the other surface of the IGBT 1 corresponds to each example in FIG. Is the same as in FIG.

このように、本実施形態によれば、第１のはんだ５ａだけでなく第２のはんだ５ｂについても、はんだ厚さを精度良く確保することができる。また、ＩＧＢＴ１の一面と他面の両面にて同じ位置に、スペーサ１ｂ、１ｃを設けてＩＧＢＴ１を支持することになるため、ＩＧＢＴ１の反りを抑制することができる。   Thus, according to this embodiment, it is possible to ensure the solder thickness with high accuracy not only for the first solder 5a but also for the second solder 5b. Further, since the IGBT 1 is supported by providing the spacers 1b and 1c at the same position on both the one surface and the other surface of the IGBT 1, the warpage of the IGBT 1 can be suppressed.

（他の実施形態）
なお、上記各実施形態では、第１、第２の放熱板３、４とＩＧＢＴ１との間に、はんだ５ａ、５ｂが介在し、これらはんだ５ａ、５ｂによって接合が行われていたが、これらの間に、はんだは無くてもよい。たとえば、直接接触によって各放熱板３、４とＩＧＢＴ１とが電気的に接続されている構成であってもよい。また、第１の放熱板３とＩＧＢＴ１との間は、はんだ接続であり、第２の放熱板４とＩＧＢＴ１とは、直接接触による電気接続でもよい。 (Other embodiments)
In each of the above embodiments, the solders 5a and 5b are interposed between the first and second radiator plates 3 and 4 and the IGBT 1, and are joined by the solders 5a and 5b. There may be no solder in between. For example, the structure by which each heat sink 3, 4 and IGBT1 are electrically connected by the direct contact may be sufficient. The first heat radiating plate 3 and the IGBT 1 may be connected by soldering, and the second heat radiating plate 4 and the IGBT 1 may be electrically connected by direct contact.

また、両放熱板に挟まれる半導体チップとしては、上記したＩＧＢＴ１に限定されるものではなく、その一面にボンディングワイヤが接続されるものであるならば、ＭＯＳトランジスタやマイコンなどのＩＣチップなどでもよい。さらに、当該半導体チップは２個以上でもよい。   Further, the semiconductor chip sandwiched between the two heat sinks is not limited to the IGBT 1 described above, and may be an IC chip such as a MOS transistor or a microcomputer as long as a bonding wire is connected to one surface thereof. . Further, two or more semiconductor chips may be used.

また、半導体装置としては、ボンディングワイヤが接続された半導体チップを一対の放熱板によって挟んでなるものであればよく、モールド樹脂６は無いものであってもよい。また、上記各実施形態では、放熱板３、４の放熱面３ｂ、４ｂに冷却部材Ｋが接触する放熱構成であったが、放熱板３、４の放熱面３ｂ、４ｂに何も接触させずに、放熱板３、４から外気に放熱する構成でもよい。   The semiconductor device may be any device as long as a semiconductor chip to which a bonding wire is connected is sandwiched between a pair of heat sinks, and the mold resin 6 may be omitted. In each of the above embodiments, the cooling member K is in contact with the heat radiation surfaces 3b and 4b of the heat radiation plates 3 and 4. However, nothing is brought into contact with the heat radiation surfaces 3b and 4b of the heat radiation plates 3 and 4. Furthermore, the structure which radiates heat from the heat sinks 3 and 4 to the outside air may be used.

また、上記第１および第２実施形態では、第１の放熱板３の厚さ方向に貫通する開口部３ｄとして、半導体チップ１を両放熱板３、４で挟んだ後に開口部３ｄを介してワイヤボンディングする製造方法としたが、これら第１および第２実施形態においても、従来の製造方法のように、半導体チップ１にワイヤボンディングを施した後に、半導体チップ１を両放熱板３、４で挟むようにしてもよい。   In the first and second embodiments, as the opening 3d penetrating in the thickness direction of the first heat radiating plate 3, the semiconductor chip 1 is sandwiched between the heat radiating plates 3 and 4 and then the opening 3d is interposed. Although the manufacturing method is wire bonding, in the first and second embodiments as well, the semiconductor chip 1 is bonded to the heat dissipation plates 3 and 4 after wire bonding is performed on the semiconductor chip 1 as in the conventional manufacturing method. You may make it pinch | interpose.

（ａ）は、本発明の第１実施形態に係る半導体装置の概略平面図、（ｂ）は同半導体装置のＡ−Ａ概略断面図である。(A) is a schematic plan view of the semiconductor device which concerns on 1st Embodiment of this invention, (b) is AA schematic sectional drawing of the semiconductor device. （ａ）は、本発明の第２実施形態に係る半導体装置の概略平面図、（ｂ）は同半導体装置のＢ−Ｂ概略断面図である。(A) is a schematic plan view of the semiconductor device which concerns on 2nd Embodiment of this invention, (b) is BB schematic sectional drawing of the semiconductor device. （ａ）は、本発明の第３実施形態に係る半導体装置の概略平面図、（ｂ）は同半導体装置のＣ−Ｃ概略断面図である。(A) is a schematic plan view of the semiconductor device which concerns on 3rd Embodiment of this invention, (b) is CC schematic sectional drawing of the semiconductor device. 本発明の第４実施形態に係る半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device which concerns on 4th Embodiment of this invention. 図４におけるＩＧＢＴの一面側の概略平面図であり、（ａ）は第１の例、（ｂ）は第２の例を示す。FIG. 5 is a schematic plan view of one side of the IGBT in FIG. 4, where (a) shows a first example and (b) shows a second example. 本発明の第５実施形態に係る半導体装置の概略断面図である。It is a schematic sectional drawing of the semiconductor device which concerns on 5th Embodiment of this invention.

符号の説明Explanation of symbols

１ 半導体チップとしてのＩＧＢＴ
１ａ 耐圧保持部としてのガードリング
１ｂ 突出部
１ｃ スペーサ
３ 第１の放熱板
３ａ 第１の放熱板の対向面
３ｂ 第１の放熱板の放熱面
３ｄ 開口部
４ 第２の放熱板
５ａ 第１のはんだ
５ｂ 第２のはんだ
８ ボンディングワイヤ
８ａ ボンディングワイヤの頂部
Ｋ 冷却部材 1 IGBT as a semiconductor chip
DESCRIPTION OF SYMBOLS 1a Guard ring as a pressure | voltage resistant holding part 1b Protrusion part 1c Spacer 3 1st heat sink 3a Opposite surface of 1st heat sink 3b Heat sink surface of 1st heat sink 3d Opening part 4 2nd heat sink 5a 1st Solder 5b Second solder 8 Bonding wire 8a Top of bonding wire K Cooling member

Claims (7)

半導体チップ（１）の一面側に第１の放熱板（３）を設け、前記半導体チップ（１）の前記一面とは反対側の他面側に第２の放熱板（４）を設け、これら両放熱板（３、４）により前記半導体チップ（１）を挟むとともに、前記半導体チップ（１）の前記一面にボンディングワイヤ（８）を接続してなり、
前記ボンディングワイヤ（８）は、前記半導体チップ（１）の前記一面から離れる方向に凸となったループ状をなしており、
前記第１の放熱板（３）における前記半導体チップ（１）の前記一面と対向する対向面（３ａ）は、前記ボンディングワイヤ（８）の頂部（８ａ）よりも前記半導体チップ（１）の前記一面に近い位置にあり、
前記第１の放熱板（３）の前記対向面（３ａ）のうち前記ボンディングワイヤ（８）に対向する部位には、開口した開口部（３ｄ）が設けられており、
前記ボンディングワイヤ（８）の前記頂部（８ａ）側の部位が、前記第１の放熱板（３）とは離れた状態で前記開口部（３ｄ）に入り込んでいることを特徴とする半導体装置。 A first heat radiating plate (3) is provided on one surface side of the semiconductor chip (1), and a second heat radiating plate (4) is provided on the other surface opposite to the one surface of the semiconductor chip (1). The semiconductor chip (1) is sandwiched between both heat sinks (3, 4), and a bonding wire (8) is connected to the one surface of the semiconductor chip (1).
The bonding wire (8) has a loop shape protruding in a direction away from the one surface of the semiconductor chip (1),
The opposing surface (3a) of the first heat radiating plate (3) facing the one surface of the semiconductor chip (1) is more than the top (8a) of the bonding wire (8). It ’s close to one side,
An opening (3d) having an opening is provided in a portion of the facing surface (3a) of the first heat radiating plate (3) facing the bonding wire (8),
A portion of the bonding wire (8) on the top (8a) side enters the opening (3d) in a state separated from the first heat radiating plate (3). 前記開口部（３ｄ）は、前記第１の放熱板（３）の前記対向面（３ａ）側から前記第１の放熱板（３）の厚さ方向に貫通する切り欠きもしくは穴であることを特徴とする請求項１に記載の半導体装置。   The opening (3d) is a notch or a hole penetrating in the thickness direction of the first heat radiating plate (3) from the facing surface (3a) side of the first heat radiating plate (3). The semiconductor device according to claim 1. 前記第１の放熱板（３）における前記対向面（３ｄ）とは反対の面側には、外部に放熱を行う放熱面（３ｂ）が設けられており、
前記ボンディングワイヤ（８）の前記頂部（８ａ）側の部位は、前記開口部（３ｄ）に入り込んでいるが、前記第１の放熱板（３）における前記対向面（３ａ）と前記放熱面（３ｂ）との間に留まっていることを特徴とする請求項２に記載の半導体装置。 A heat radiating surface (3b) for radiating heat to the outside is provided on the surface of the first heat radiating plate (3) opposite to the facing surface (3d).
The portion of the bonding wire (8) on the top (8a) side enters the opening (3d), but the opposing surface (3a) and the heat dissipation surface ( 3. The semiconductor device according to claim 2, wherein the semiconductor device remains between 前記開口部（３ｄ）は、前記第１の放熱板（３）の前記対向面（３ａ）よりも当該第１の放熱板（３）の厚さ方向に凹んだものであることを特徴とする請求項１に記載の半導体装置。   The opening (3d) is recessed in the thickness direction of the first heat radiating plate (3) from the facing surface (3a) of the first heat radiating plate (3). The semiconductor device according to claim 1. 前記半導体チップ（１）の前記一面と前記第１の放熱板（３）とは、はんだ（５ａ）を介して接合されており、
前記半導体チップ（１）の一面のうちの周辺部の全周には、前記半導体チップ（１）の前記一面と前記他面との電気絶縁性を確保するための絶縁材料よりなる耐圧保持部（１ａ）が設けられており、この耐圧保持部（１ａ）の少なくとも一部が前記半導体チップ（１）の前記一面上に突出した突出部（１ｂ）となっており、
この耐圧保持部（１ａ）の突出部（１ｂ）が、前記半導体チップ（１）の前記一面と前記第１の放熱板（３）との間に介在する前記はんだ（５ａ）の厚さを保持するスペーサとして構成されていることを特徴とする請求項１ないし４のいずれか１つに記載の半導体装置。 The one surface of the semiconductor chip (1) and the first heat radiating plate (3) are joined via solder (5a),
On the entire circumference of the peripheral portion of one surface of the semiconductor chip (1), a pressure-resistant holding portion (made of an insulating material for ensuring electrical insulation between the one surface of the semiconductor chip (1) and the other surface ( 1a) is provided, and at least a part of the pressure holding portion (1a) is a protruding portion (1b) protruding on the one surface of the semiconductor chip (1),
The protrusion (1b) of the pressure-resistant holding portion (1a) holds the thickness of the solder (5a) interposed between the one surface of the semiconductor chip (1) and the first heat radiating plate (3). 5. The semiconductor device according to claim 1, wherein the semiconductor device is configured as a spacer. さらに、前記半導体チップ（１）の前記他面と前記第２の放熱板（４）とは、はんだ（５ｂ）を介して接合されており、
前記半導体チップ（１）の前記他面のうち、前記半導体チップ（１）の前記一面に設けられている前記突出部（１ｂ）と同じ位置に、前記半導体チップ（１）の前記他面と前記第２の放熱板（４）との間に介在する前記はんだ（５ｂ）の厚さを保持する電気絶縁性のスペーサ（１ｃ）が設けられていることを特徴とする請求項５に記載の半導体装置。 Furthermore, the other surface of the semiconductor chip (1) and the second heat radiating plate (4) are joined via solder (5b),
Of the other surface of the semiconductor chip (1), the other surface of the semiconductor chip (1) and the other surface are located at the same position as the protrusion (1b) provided on the one surface of the semiconductor chip (1). 6. The semiconductor according to claim 5, further comprising an electrically insulating spacer (1c) for maintaining the thickness of the solder (5b) interposed between the second heat sink (4). apparatus. 半導体チップ（１）の一面側に第１の放熱板（３）を設け、前記半導体チップ（１）の前記一面とは反対側の他面側に第２の放熱板（４）を設け、これら両放熱板（３、４）により前記半導体チップ（１）を挟むとともに、前記半導体チップ（１）の前記一面に、前記半導体チップ（１）の前記一面から離れる方向に凸となったループ状をなすボンディングワイヤ（８）を接続し、
前記第１の放熱板（３）における前記半導体チップ（１）の前記一面と対向する対向面（３ａ）を、前記ボンディングワイヤ（８）の頂部（８ａ）よりも前記半導体チップ（１）の前記一面に近い位置にあるようにし、
前記第１の放熱板（３）の前記対向面（３ａ）のうち前記ボンディングワイヤ（８）に対向する部位に、前記第１の放熱板（３）の厚さ方向に貫通する切り欠きもしくは穴よりなる開口部（３ｄ）を設け、
前記ボンディングワイヤ（８）の前記頂部（８ａ）側の部位を、前記第１の放熱板（３）とは離れた状態で前記開口部（３ｄ）に入り込ませるようにした半導体装置の製造方法であって、
前記開口部（３ｄ）が形成された前記第１の放熱板（３）を前記半導体チップ（１）の一面側に設け、前記第２の放熱板（４）を前記半導体チップ（１）の前記他面側に設け、これら両放熱板（３、４）により前記半導体チップ（１）を挟んだ後、
前記第１の放熱板（３）の前記開口部（３ｄ）を介して前記半導体チップ（１）の前記一面に前記ボンディングワイヤ（８）を接続することを特徴とする半導体装置の製造方法。 A first heat radiating plate (3) is provided on one surface side of the semiconductor chip (1), and a second heat radiating plate (4) is provided on the other surface opposite to the one surface of the semiconductor chip (1). The semiconductor chip (1) is sandwiched between the heat radiating plates (3, 4), and a loop shape is formed on the one surface of the semiconductor chip (1) so as to protrude from the one surface of the semiconductor chip (1). Connect the resulting bonding wire (8),
The opposing surface (3a) facing the one surface of the semiconductor chip (1) in the first heat radiating plate (3) is more than the top (8a) of the bonding wire (8). So that it ’s close to one side,
A notch or hole penetrating in the thickness direction of the first heat radiating plate (3) in a portion of the opposing surface (3a) of the first heat radiating plate (3) facing the bonding wire (8). An opening (3d) made of
In the method of manufacturing a semiconductor device, a portion of the bonding wire (8) on the top (8a) side is allowed to enter the opening (3d) in a state of being separated from the first heat radiating plate (3). There,
The first heat radiating plate (3) in which the opening (3d) is formed is provided on one surface side of the semiconductor chip (1), and the second heat radiating plate (4) is disposed on the semiconductor chip (1). After providing the semiconductor chip (1) between the two heat sinks (3, 4),
A manufacturing method of a semiconductor device, wherein the bonding wire (8) is connected to the one surface of the semiconductor chip (1) through the opening (3d) of the first heat radiating plate (3).
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