JP2015092541A - Ceramic wiring board, ceramic green sheet for ceramic wiring board, and glass ceramic powder for ceramic wiring board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic wiring board high in mechanical strength, which can be baked at a low temperature, and of which the thermal expansion coefficient can be controlled to become low.SOLUTION: A ceramic wiring board 1 comprises a ceramic substrate 10 and an internal conductor 20. The internal conductor 20 is provided inside the ceramic substrate 10 as a form of wiring. The ceramic substrate 10 includes glass, a first ceramic filler and a second ceramic filler. The first ceramic filler is lower than the second ceramic filler in thermal expansion coefficient in a temperature range of -40 to +125°C. The second ceramic filler is higher than the first ceramic filler in three-point-bending strength.

Description

  The present invention relates to a ceramic wiring board, a ceramic green sheet for a ceramic wiring board, and a glass ceramic powder for a ceramic wiring board.

Conventionally, when inspecting a semiconductor wafer, a probe card is arranged on the semiconductor wafer, and the semiconductor wafer is electrically connected to a tester via the probe card.
The probe card usually has a test head that contacts a semiconductor wafer, a printed ceramic wiring board connected to the tester, and a ceramic wiring board called an interposer board that connects the printed ceramic wiring board and the test head. .

  For example, Patent Document 1 describes a ceramic wiring board made of low-temperature fired ceramics including glass as a ceramic wiring board capable of low-temperature firing.

JP 2009-074823 A

  The distance between the electrode pads of the printed ceramic wiring board is larger than the distance between the electrode pads in the test head. An electrode pad corresponding to the electrode pad of the printed ceramic wiring board is provided on one main surface of the interposer substrate, and an electrode pad corresponding to the electrode pad of the test head is provided on the other main surface. ing. The electrode pads on the one main surface side and the electrode pads on the other main surface side are connected by an internal conductor. Therefore, in the interposer substrate, it is important that the position accuracy of the electrode pads on both main surfaces is high.

  Further, the inspection using the probe card is performed in a wide temperature range such as −40 ° C. to + 125 ° C. For this reason, when the inspection temperature changes, the thermal expansion coefficient of the interposer substrate is set so that there is no difference between the distance between the electrode pads of the interposer substrate and the distance between the electrode pads of the test head, the printed ceramic wiring substrate, etc. It is preferable to approximate the thermal expansion coefficient of the test head or the printed ceramic wiring board. Therefore, the interposer substrate is preferably made of a material whose thermal expansion coefficient can be adjusted according to the use environment.

  In general, the thermal expansion coefficient of the test head is close to the thermal expansion coefficient of the semiconductor wafer. For this reason, there is also a demand for reducing the thermal expansion coefficient of the interposer substrate to about the thermal expansion coefficient of the semiconductor wafer.

However, the ceramic wiring board described in Patent Document 1 has a problem that it is difficult to realize a thermal expansion coefficient that is as low as that of the semiconductor wafer.
Further, there is a demand for ensuring the mechanical strength of the interposer substrate.
A main object of the present invention is to provide a ceramic wiring board that can be fired at a low temperature, and that can adjust a thermal expansion coefficient to a low level and that has high mechanical strength.

  The ceramic wiring board according to the present invention includes a ceramic substrate and an internal conductor. The inner conductor is disposed in the ceramic substrate. The ceramic substrate includes glass, a first ceramic filler, and a second ceramic filler. The thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of −40 ° C. to + 125 ° C. The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

  In the ceramic wiring board according to the present invention, the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the first ceramic filler is −8 to +5 ppm / ° C., and the three-point bending strength of the second ceramic filler is 400. It is preferably ~ 800 MPa.

  In the ceramic wiring board according to the present invention, the ceramic substrate includes three or more ceramic fillers, and the first ceramic filler is a ceramic filler having a thermal expansion coefficient of three or more in a temperature range of −40 ° C. to + 125 ° C. Among them, it is preferable that the second ceramic filler has the highest three-point bending strength of each ceramic filler among the three or more kinds of ceramic fillers.

  In the ceramic wiring substrate according to the present invention, the ceramic substrate is preferably made of glass, a first ceramic filler, and a second ceramic filler.

  In the ceramic wiring board according to the present invention, the first ceramic filler is preferably a willemite filler, and the second ceramic filler is preferably an alumina filler.

  In the ceramic wiring board according to the present invention, the mass ratio of glass, alumina filler and willemite filler (glass: alumina filler and willemite filler) is in the range of 30:70 to 65:35, It is preferable that mass ratio (alumina filler: willemite filler) with a willemite filler exists in the range of 20: 80-60: 40.

  The average particle size of the willemite filler is preferably smaller than the average particle size of the alumina filler.

  The glass is preferably borosilicate glass.

Glass, as a glass composition, in _{mass%, SiO 2 60~80%, B} 2 O 3 10~30%, preferably contains _{Li 2 O + Na 2 O +} K 2 O 1~5% and MgO + CaO + SrO + BaO 0~20 %.

  The thermal expansion coefficient of the ceramic substrate in the temperature range of −40 ° C. to + 125 ° C. is preferably 4 ppm / ° C. or less.

  The ceramic green sheet for a ceramic wiring board according to the present invention includes glass, a first ceramic filler, and a second ceramic filler, and the thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is It is lower than the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the second ceramic filler, and the three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

  The glass ceramic powder for a ceramic wiring board according to the present invention contains glass, a first ceramic filler, and a second ceramic filler, and the thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is It is lower than the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the second ceramic filler, and the three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

  ADVANTAGE OF THE INVENTION According to this invention, it is a ceramic wiring board which can be low-temperature fired, Comprising: A thermal expansion coefficient can be adjusted low and a ceramic wiring board with high mechanical strength can be provided.

It is a typical sectional view of a ceramic wiring board concerning one embodiment of the present invention. It is a graph showing the relationship between the mass ratio (mass percentage of glass) of glass and a filler in a ceramic substrate, the relative density of a ceramic wiring board, and mechanical strength.

  Hereinafter, an example of the preferable form which implemented this invention is demonstrated. However, the following embodiment is merely an example. The present invention is not limited to the following embodiments.

  FIG. 1 is a schematic cross-sectional view of a ceramic wiring board according to the present embodiment. The ceramic wiring board 1 shown in FIG. 1 can be used as a general ceramic wiring board that is required to have a low thermal expansion coefficient and high mechanical strength. The ceramic wiring substrate 1 can be used as an interposer substrate for a probe card, for example.

  The ceramic wiring substrate 1 has a ceramic substrate 10. The ceramic substrate 10 has first and second main surfaces 10a and 10b. The ceramic substrate 10 is configured by a laminated body of a plurality of ceramic layers 11.

  A plurality of internal conductors 20 are arranged inside the ceramic substrate 10. Each internal conductor 20 has an interlayer electrode 21 positioned between adjacent ceramic layers 11 and an interlayer electrode that penetrates the ceramic layer 11 and faces the stacking direction of the ceramic layer 11 via the ceramic layer 11. And a via-hole electrode 22 connecting the 21 to each other.

  The plurality of internal conductors 20 are provided across the first main surface 10 a and the second main surface 10 b of the ceramic substrate 10. The end of the inner conductor 20 on the first main surface 10a side is connected to an electrode pad 31 provided on the first main surface 10a. The end of the inner conductor 20 on the second main surface 10b side is connected to an electrode pad 32 provided on the second main surface 10b.

  The distance between adjacent electrode pads 32 is longer than the distance between adjacent electrode pads 31. For this reason, when the ceramic wiring substrate 1 is used as an interposer substrate, the test head is connected to the second main surface 10b side, and the printed ceramic wiring substrate is connected to the first main surface 10a side.

  The internal conductor 20 and the electrode pads 31 and 32 can be made of a suitable conductive material. The internal conductor 20 and the electrode pads 31 and 32 can be made of at least one of metals such as Pt, Au, Ag, Cu, Ni, and Pd, for example.

  The ceramic substrate 10 is made of a low-temperature fired ceramic containing glass. Specifically, the ceramic substrate 10 includes glass, a first ceramic filler, and a second ceramic filler. The thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of −40 ° C. to + 125 ° C. The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

  Glass increases the density (relative density) of the ceramic substrate 10 and increases the mechanical strength of the ceramic substrate 10.

The ceramic filler can adjust the thermal expansion coefficient and the mechanical strength in the temperature range of −40 ° C. to + 125 ° C., which cannot be adjusted by a single glass.
Since the ceramic filler includes a first ceramic filler having a low coefficient of thermal expansion in a temperature range of −40 ° C. to + 125 ° C., and a second ceramic filler having a high three-point bending strength, the glass and these ceramic fillers By adjusting the mass ratio, the coefficient of thermal expansion of the ceramic substrate 10 can be suitably adjusted, and the mechanical strength of the ceramic substrate 10 can be ensured. That is, the first ceramic filler can reduce the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of −40 ° C. to + 125 ° C., and the second ceramic filler improves the mechanical strength of the ceramic substrate 10. Can be made.

  In addition, the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the ceramic filler in this specification was measured by measuring the thermal expansion coefficient of a sheet-like sintered body having a thickness of 3.0 mm prepared by the following method.

  The three-point bending strength of the ceramic filler in this specification was measured by a method based on JIS R1601 (2008) using a sheet-like sintered body having a thickness of 3.0 mm produced by the following method.

  First, 15 parts by mass of polyvinyl butyral (PVB), 3 parts by mass of benzylbutyl phthalate, and 50 parts by mass of toluene are mixed and kneaded with respect to 100 parts by mass of a ceramic filler having an average particle diameter of 2 μm to prepare a slurry. Next, the slurry is formed into a circular sheet having a diameter of 20.32 cm (8 inches) and a thickness of 150 μm by a doctor blade method to produce a green sheet. Next, eight green sheets are laminated, thermocompression bonded at 90 ° C. and 30 MPa, heat treated at 450 ° C., degreased, and sintered at 1600 ° C. to produce a sintered body. Finally, the sintered body is polished until the thickness becomes 3.0 mm to obtain a sheet-like sintered body.

  The ceramic substrate 10 may include three or more kinds of ceramic fillers. That is, a ceramic filler other than the first ceramic filler and the second ceramic filler may be included.

  In this case, the first ceramic filler has the lowest thermal expansion coefficient among the three or more ceramic fillers in the temperature range of −40 ° C. to 125 ° C., and the second ceramic filler is 3 of the second ceramic filler. The point bending strength is preferably the highest among three or more ceramic fillers.

  The ceramic substrate 10 preferably contains two kinds of ceramic fillers. That is, by adjusting the mass ratio of the glass, the first ceramic filler, and the second ceramic filler, the thermal expansion coefficient of the ceramic substrate 10 can be easily reduced and the mechanical strength of the ceramic substrate 10 is improved. Can be made.

  The thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is preferably −8 to +5 ppm / ° C. Thereby, the ceramic substrate 10 having a thermal expansion coefficient close to that of the semiconductor wafer can be obtained. The thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is more preferably −5 to +4 ppm / ° C., and further preferably −3 to +3 ppm / ° C.

As the first ceramic filler, willemite filler, cordierite filler, β-spodumene filler, mullite filler, zirconia-based ceramic filler (ZrSiO ₄ , ZrW ₂ O ₈ , (ZrO ₂ ) P ₂ O ₇ , KZr ₂ (PO ₄ ) ₃ , Zr ₂ (WO ₄ ) (PO ₄ ) ₂ ) and the like. Among these, willemite filler is preferable. By using a willemite filler, the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of −40 ° C. to + 125 ° C. can be reduced to, for example, 4 ppm / ° C. or less, and further 3.6 ppm / ° C. or less. The willemite is a silicon / zinc composite oxide. Willemite is generally represented by ZnSiO ₄ .

  The three-point bending strength of the second ceramic filler is preferably 400 to 800 MPa. Thereby, the ceramic substrate 10 with high mechanical strength can be obtained. The three-point bending strength of the second ceramic filler is more preferably 450 to 800 MPa, and further preferably 500 to 800 MPa.

  Examples of the second ceramic filler include alumina filler and zirconia filler. Among these, an alumina filler is preferable. By using the alumina filler, the mechanical strength of the ceramic substrate 10 can be sufficiently increased.

  For example, when the ceramic substrate 10 includes an alumina filler and a willemite filler, the thermal expansion coefficient of the ceramic substrate 10 can be suitably adjusted by adjusting the mass ratio of the alumina filler and the willemite filler. The mechanical strength of the ceramic substrate 10 can be ensured. That is, the thermal expansion coefficient can be reduced by the willemite filler, and the mechanical strength of the ceramic substrate 10 can be improved by the alumina filler. Moreover, the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of −40 ° C. to + 125 ° C. can be reduced to, for example, 4 ppm / ° C. or less, and further to 3.6 ppm / ° C. or less.

  FIG. 2 is a graph showing the relationship between the mass ratio of glass and filler in the ceramic substrate 10, the relative density (solid line display) and the mechanical strength (three-point bending strength) (dotted line display) of the ceramic wiring board. The relative density D is represented by measured density / theoretical density × 100 (%) (the theoretical density is a value calculated from the theoretical density of glass and ceramics at a mixing ratio corresponding to the horizontal axis). As shown in FIG. 2, the relative density increases as the glass content increases until the glass content reaches a certain value, and the three-point bending strength increases as the relative density increases. When the glass content exceeds a certain value, the relative density becomes about 100%, and the relative density does not increase even if the glass content increases further, and an increase in the three-point bending strength with increasing relative density is also seen. Disappear. On the other hand, since the filler content decreases as the glass content increases, the three-point bending strength also decreases accordingly. From these results, from the viewpoint of increasing the mechanical strength of the ceramic substrate 10, the mass ratio of glass, alumina filler, and willemite filler (glass: alumina filler and willemite filler) is 30:70 to 65: It is found that it is preferably in the range of 35, and more preferably in the range of 40:60 to 60:40.

  In the ceramic substrate 10, if the mass ratio of the willemite filler to the total amount of the alumina filler and the willemite filler (the total amount of the willemite filler / alumina filler and the willemite filler) is too small, the mechanical strength of the ceramic substrate 10. However, the thermal expansion coefficient of the ceramic substrate 10 tends to increase and the dielectric constant tends to increase. If the mass ratio of the willemite filler to the total amount of the alumina filler and the willemite filler (the total amount of the willemite filler / alumina filler and the willemite filler) is too large, the thermal expansion coefficient of the ceramic substrate 10 becomes small and the dielectric becomes dielectric. Although the rate decreases, the mechanical strength of the ceramic substrate 10 tends to decrease. Therefore, from the viewpoint of reducing the thermal expansion coefficient of the ceramic substrate 10 and lowering the dielectric constant while keeping the mechanical strength of the ceramic substrate 10 high, the mass ratio of the alumina filler to the willemite filler (alumina filler: Remite filler) is preferably in the range of 20:80 to 60:40, and more preferably in the range of 30:70 to 50:50.

  The average particle size of the willemite filler is preferably smaller than the average particle size of the alumina filler, and more preferably 1/2 times or less. In this case, the filling rate of the filler is increased and the mechanical strength is improved.

  The glass in the ceramic substrate 10 is preferably borosilicate glass. By using borosilicate glass, the thermal expansion coefficient of the ceramic substrate 10 can be easily reduced. Further, the mechanical strength of the ceramic substrate 10 can be increased.

Specifically, borosilicate glass, as a glass composition, in _{mass%, SiO 2 60~80%, B} 2 O 3 10~30%, Li 2 O + Na 2 O + K 2 O 1~5% and MgO + CaO + SrO + BaO 0~20 % Is preferably included.

  Hereinafter, the percentage shown without particular notice indicates a mass percentage.

SiO ₂ is a component that forms a glass skeleton. The SiO ₂ content is preferably 60 to 80% in terms of mass percentage. If the content of SiO ₂ decreases, vitrification may become difficult. On the other hand, when the content is increased, the melting temperature is increased, and melting may be difficult. A more preferable range of the content of SiO ₂ is 65 to 75%.

B ₂ O ₃ is a component that forms a glass skeleton, widens the vitrification range, and stabilizes the glass. The content of B ₂ O ₃ is preferably 10 to 30% in terms of mass percentage. When the content of B ₂ O ₃ decreases, the melting temperature increases and melting tends to be difficult. On the other hand, when the content of B ₂ O ₃ increases, the thermal expansion coefficient of the ceramic wiring board 1 tends to increase. A more preferable range of the content of B ₂ O ₃ is 15 to 25%.

Alkali metal oxides (Li ₂ O, Na ₂ O, K ₂ O) are components that lower the viscosity of the molten glass and facilitate melting. The content (total amount) of the alkali metal oxide is preferably 1 to 5% in terms of mass percentage. When the content of the alkali metal oxide is decreased, the effect of decreasing the viscosity may be decreased. On the other hand, when the content of the alkali metal oxide increases, the water resistance tends to decrease. A more preferable range of the content of the alkali metal oxide is 2 to 4%.

  Alkaline earth metal oxides (MgO, CaO, SrO, BaO) are components that lower the viscosity of the molten glass and facilitate melting. The content (total amount) of the alkaline earth metal oxide is preferably expressed as a percentage by mass and is preferably 0 to 20%. When the content of the alkaline earth metal oxide increases, the glass tends to become unstable, and the glass tends to devitrify when the glass is melted. A more preferable range of the content of the alkaline earth metal oxide is 5 to 15%.

  Next, a method for manufacturing the ceramic wiring board 1 will be described.

  First, a glass ceramic powder for a ceramic wiring board including the glass powder, the first ceramic filler, and the second ceramic filler described above is prepared. Here, in the glass ceramic powder for a ceramic wiring board, the first ceramic filler is preferably a willemite filler, and the second ceramic filler is preferably an alumina filler. The mass ratio of glass to alumina filler and willemite filler (glass: alumina filler and willemite filler) is preferably in the range of 30:70 to 65:35, 40:60 to 60:40 More preferably, it is within the range. The mass ratio of the alumina filler to the willemite filler (alumina filler: willemite filler) is preferably in the range of 20:80 to 60:40, and is preferably in the range of 30:70 to 50:50. Is more preferable. The average particle size of the willemite filler is preferably smaller than the average particle size of the alumina filler, and more preferably ½ times or less the average particle size of the alumina filler.

  The glass is preferably borosilicate glass, and more preferably borosilicate glass having the above composition. It is preferable that the average particle diameter of glass powder exists in the range of 1 micrometer-5 micrometers.

  Next, a slurry is prepared by adding a binder containing a resin, a plasticizer, a solvent and the like to the glass ceramic powder for a ceramic wiring board and kneading. The slurry is formed into a sheet by a doctor blade method or the like to produce a ceramic green sheet for a ceramic wiring board containing glass, an alumina filler, and a willemite filler.

  Next, a via hole is formed in the ceramic green sheet. The via hole can be formed by, for example, laser light irradiation or mechanical punching.

  Next, a conductive paste for forming the via hole electrode 22 is filled into the formed via hole. Further, a conductive paste for forming the interlayer electrode 21 and the electrode pads 31 and 32 is applied on the ceramic green sheet.

  Thereafter, ceramic green sheets are appropriately laminated to obtain a laminate. The ceramic wiring substrate 1 can be completed by firing the laminate.

  Hereinafter, the present invention will be described in more detail on the basis of specific examples. However, the present invention is not limited to the following examples, and may be appropriately modified and implemented without departing from the scope of the present invention. Is possible.

Example 1
The glass raw material is prepared so that it becomes SiO ₂ 70%, B ₂ O ₃ 28%, K ₂ O 2% by mass percentage display, the glass raw material is put into a platinum crucible, and melted by melting at 1600 ° C. Glass was obtained. The molten glass was supplied between two water-cooled rotating rolls, and the molten glass was stretched to obtain a film-like glass.

  The glass thus obtained was pulverized by a ball mill to obtain a glass powder having an average particle size of 2.2 μm.

  For 100 parts by mass of mixed powder prepared to be 45 parts by mass of glass powder, 30 parts by mass of alumina powder having an average particle diameter of 2.0 μm, and 25 parts by mass of willemite powder having an average particle diameter of 0.8 μm, After mixing and kneading 15 parts by weight of polyvinyl butyral (PVB), 3 parts by weight of benzylbutyl phthalate and 50 parts by weight of toluene, a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

  The green sheet was punched to obtain a circular green sheet molded body having a diameter of 20.32 cm (8 inches). Next, through holes having a diameter of 100 μm and a distance of 500 μm were formed in the green sheet molded body by a laser punching machine, and via conductors were embedded by printing. Moreover, the interlayer electrode and the electrode pad were formed by printing a conductive paste. Thereafter, a green sheet molded body was laminated, and an alumina green sheet made of an alumina filler was further laminated as a restraining member to produce a laminated body.

  Next, the laminate was thermocompression bonded at 90 ° C. and 30 MPa. Thereafter, the laminate was heat treated at 450 ° C. and degreased, and then sintered at 850 ° C. to obtain a sintered body. The restrained member was removed by polishing the obtained sintered body, and a ceramic wiring board having a thickness of 3.0 mm was produced.

  The thermal expansion coefficient of the obtained ceramic wiring board in the temperature range of −40 to 125 ° C. was 3.9 ppm / ° C., which was almost the same value as the thermal expansion coefficient of the semiconductor wafer.

  The three-point bending strength of the ceramic wiring substrate measured by a method according to JIS R1601 (2008) was 300 MPa, and had sufficient strength.

  When this ceramic wiring board was used as a probe card and a semiconductor wafer was inspected with this probe card in a temperature range of −40 to + 125 ° C., the semiconductor wafer could be inspected without any problem.

(Example 2)
A ceramic wiring board was produced in the same manner as in Example 1 except for the following points.

The composition of the glass raw material was expressed as mass percentage, SiO ₂ 65%, B ₂ O ₃ 15%, CaO 16%, K ₂ O 4%.

  The average particle diameter of the glass powder was 2.0 μm.

  15 parts by mass of methacrylic acid resin and benzylbutyl phthalate are added to 100 parts by mass of the mixed powder prepared to be 40% by mass of glass powder, 25% by mass of alumina filler powder, and 35% by mass of willemite filler powder. After mixing 3 parts by mass and 50 parts by mass of toluene and kneading, a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

  The thermal expansion coefficient of the obtained ceramic wiring board in the temperature range of −40 to 125 ° C. was 3.4 ppm / ° C., which was almost the same value as the thermal expansion coefficient of the semiconductor wafer.

  The three-point bending strength of the ceramic wiring board measured by a method according to JIS R1601 (2008) was 280 MPa, and had a sufficient strength.

  When this ceramic wiring board was used as a probe card and a semiconductor wafer was inspected with this probe card in a temperature range of −40 to + 125 ° C., the semiconductor wafer could be inspected without any problem.

(Comparative example)
A ceramic wiring board was produced in the same manner as in Example 1 except for the following points.

  15 parts by mass of polyvinyl butyral (PVB), 3 parts by mass of benzylbutyl phthalate, and 50 parts by mass of toluene are mixed with 100 parts by mass of the mixed powder prepared so as to be 60 parts by mass of glass powder and 40 parts by mass of alumina powder. After kneading, a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

  The thermal expansion coefficient of the obtained ceramic wiring board in the temperature range of −40 to 125 ° C. was 6.2 ppm / ° C., which was larger than the thermal expansion coefficient of the semiconductor wafer.

  The three-point bending strength of the ceramic wiring board measured by a method according to JIS R1601 (2008) was 280 MPa.

  When this ceramic wiring board is used as a probe card and a semiconductor wafer is inspected with this probe card in a temperature range of −40 to + 125 ° C., the semiconductor wafer can be inspected accurately due to expansion of the ceramic wiring board. There wasn't.

1: Ceramic wiring substrate 10: Ceramic substrate 10a: First main surface 10b: Second main surface 11: Ceramic layer 20: Internal conductor 21: Interlayer electrode 22: Via hole electrodes 31, 32: Electrode pads

Claims (12)

A ceramic substrate;
An inner conductor disposed in the ceramic substrate;
With
The ceramic substrate includes glass, a first ceramic filler, and a second ceramic filler,
The thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the first ceramic filler is lower than the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the second ceramic filler,
The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.
Ceramic wiring board. The thermal expansion coefficient of the first ceramic filler in the temperature range of −40 ° C. to + 125 ° C. is −8 to +5 ppm / ° C.,
The ceramic substrate according to claim 1, wherein the second ceramic filler has a three-point bending strength of 400 to 800 MPa. The ceramic substrate includes three or more ceramic fillers,
The first ceramic filler has the lowest thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. among the three or more ceramic fillers,
The ceramic substrate according to claim 1 or 2, wherein the second ceramic filler has the highest three-point bending strength of each ceramic filler among the three or more kinds of ceramic fillers.   The ceramic substrate according to claim 1, wherein the ceramic substrate is made of glass, a first ceramic filler, and a second ceramic filler.   The ceramic wiring board according to any one of claims 1 to 4, wherein the first ceramic filler is a willemite filler, and the second ceramic filler is an alumina filler.   The mass ratio of the glass to the alumina filler and the willemite filler (the glass: the alumina filler and the willemite filler) is in the range of 30:70 to 65:35. The ceramic wiring substrate according to claim 5, wherein a mass ratio to the remite filler (the alumina filler: the willemite filler) is in a range of 20:80 to 60:40.   The ceramic wiring board according to claim 5 or 6, wherein an average particle diameter of the willemite filler is smaller than an average particle diameter of the alumina filler.   The ceramic wiring substrate according to any one of claims 1 to 7, wherein the glass is borosilicate glass. The glass comprises as a glass composition, in _{mass%, SiO 2 60~80%, B} 2 O 3 10~30%, Li 2 O + Na 2 O + K 2 O 1~5% and 0~20% MgO + CaO + SrO + BaO, claim 9. The ceramic wiring board according to 8.   10. The ceramic wiring substrate according to claim 1, wherein a thermal expansion coefficient of the ceramic substrate in a temperature range of −40 ° C. to + 125 ° C. is 4 ppm / ° C. or less. Including glass, a first ceramic filler and a second ceramic filler;
The thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the first ceramic filler is lower than the thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C. of the second ceramic filler,
The ceramic green sheet for a ceramic wiring board, wherein the three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler. Glass, a first ceramic filler, and a second ceramic filler, wherein the first ceramic filler has a thermal expansion coefficient in the temperature range of −40 ° C. to + 125 ° C., which is −40 ° C. to +125 of the second ceramic filler. Lower than the coefficient of thermal expansion in the temperature range of ℃,
The glass ceramic powder for a ceramic wiring board, wherein the three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.