JPH06116019A - Glass-ceramic substrate fired at low temperature - Google Patents
Glass-ceramic substrate fired at low temperatureInfo
- Publication number
- JPH06116019A JPH06116019A JP4291976A JP29197692A JPH06116019A JP H06116019 A JPH06116019 A JP H06116019A JP 4291976 A JP4291976 A JP 4291976A JP 29197692 A JP29197692 A JP 29197692A JP H06116019 A JPH06116019 A JP H06116019A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- weight
- ceramic
- celsian
- fired
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は回路基板用ガラスセラミ
ック組成物および基板に関する。FIELD OF THE INVENTION The present invention relates to a glass-ceramic composition for a circuit board and a board.
【0002】[0002]
【従来の技術】ハイブリッドICやマルチチップパッケ
ージ用の多層回路基板等は、基板上に導体、抵抗体、絶
縁体ペースト等がスクリーン印刷され、同時焼成されて
作られる。これには、比抵抗が小さく配線パターンの微
細化ができ、大気雰囲気中で750〜950℃の低温焼
成でき、焼成コストの安い、Au,AgーPd,Ag等
の導体材料が使われる。基板は一般に焼成温度の高いア
ルミナ基板が用いられるが、近年、ボロシリケートガラ
スにアルミナ、ホルステライトあるいはシリカ等の分散
材粉末を混合させ、大気雰囲気中で750〜950℃で
同時焼成可能なガラスセラミック基板が開発されてい
る。2. Description of the Related Art A hybrid IC or a multi-layer circuit board for a multi-chip package is manufactured by screen-printing a conductor, a resistor, an insulator paste or the like on the board and simultaneously firing them. For this, a conductor material such as Au, Ag-Pd, or Ag, which has a small specific resistance, can be miniaturized in a wiring pattern, can be fired at a low temperature of 750 to 950 ° C. in an air atmosphere, and has a low firing cost, is used. Generally, an alumina substrate having a high firing temperature is used as a substrate, but in recent years, a glass ceramic capable of being co-fired at 750 to 950 ° C. in an air atmosphere by mixing borosilicate glass with a dispersant powder such as alumina, forsterite or silica. Substrates have been developed.
【0003】基板は、導体との密着力が劣ったり焼成基
板が反ることを防止するため、なるべくシリコンチップ
に近い熱膨脹率を有することが要求される。また信号伝
搬の高速化と優れた高周波信号のため低誘電率を有する
ことが要求される。The substrate is required to have a coefficient of thermal expansion that is as close as possible to that of a silicon chip in order to prevent inferior adhesion to a conductor and warp of the fired substrate. In addition, it is required to have a low dielectric constant for high-speed signal propagation and excellent high-frequency signals.
【0004】上記のガラスセラミック基板は結合材のガ
ラス粉末と上記分散材粉末をアルコール等の分散媒中で
混合し、乾燥して混合粉末を作り、この混合粉末にビヒ
クルを添加混合し、これをドクターブレード法によりグ
リーンシートにする。従って、複数種の粉末を別々に調
製する必要があり、原料配合、粉砕、分級等の結合材製
造条件や、これらの結合材の配合、分級等の製造条件を
管理する必要があり、多くの手間が掛かる。In the above glass ceramic substrate, glass powder as a binder and the above dispersant powder are mixed in a dispersion medium such as alcohol and dried to prepare a mixed powder, and a vehicle is added to and mixed with this mixed powder. Make a green sheet by the doctor blade method. Therefore, it is necessary to separately prepare a plurality of kinds of powders, it is necessary to manage the binder production conditions such as raw material blending, pulverization, and classification, and the blending conditions of these binders and the production conditions such as classification. Take the trouble.
【0005】[0005]
【発明が解決しようとする課題】本発明の課題は、大気
雰囲気下750〜950℃の低温焼成で、低熱膨脹率低
誘電率の焼成基板を得る一種類の結合材からなるガラス
セラミック組成物、及びその低温焼成基板を提供するこ
とにある。An object of the present invention is to provide a glass-ceramic composition comprising one kind of binder, which is obtained by firing at a low temperature of 750 to 950 ° C. in an air atmosphere to obtain a fired substrate having a low coefficient of thermal expansion and a low dielectric constant. And to provide a low temperature fired substrate thereof.
【0006】[0006]
【課題を解決するための手段】本発明者は、重量%で、
PbO 15〜50、BaO 2.5〜20、Al2O3
5〜15、SiO2 25〜45、B2 O3 0.
5〜10、CaO 0〜5、ZnO 0〜15、Sb2
O3 0〜1の組成をもち、低温焼成中に主にセルシア
ン(BaO・Al2 O3 ・2SiO2 )相を微細かつ均
一に析出するガラスセラミック組成物により、課題を達
成できることを見出だした。SUMMARY OF THE INVENTION The present inventor
PbO 15-50, BaO 2.5-20, Al 2 O 3
5 to 15, SiO 2 25 to 45, B 2 O 3 0.
5-10, CaO 0-5, ZnO 0-15, Sb 2
It has been found that a glass ceramic composition having a composition of O 3 0 to 1 and precipitating a celsian (BaO.Al 2 O 3 .2SiO 2 ) phase finely and uniformly during low temperature firing can achieve the object. .
【0007】なお、セルシアンの微粉末をガラスマトリ
ックス成分を有するガラスフリッツと混合した組成物に
よっても低温焼成基板を作れる。しかし、セルシアンは
その化学量論組成(BaO 41重量%、Al2O3 2
7重量%、SiO2 32重量%)に配合した原料を1
700℃以上の高温で溶融加熱しなければ製造できな
い。また本発明より、焼成基板マトリッス中のセルシア
ンの分散均一性が劣り、機械的特性が劣る。A low temperature fired substrate can also be prepared by using a composition in which fine powder of celsian is mixed with glass frits having a glass matrix component. However, celsian has a stoichiometric composition (41% by weight of BaO, Al 2 O 3 2
7% by weight, SiO 2 32% by weight) 1
It cannot be manufactured without melting and heating at a high temperature of 700 ° C. or higher. Further, according to the present invention, the uniformity of dispersion of celsian in the matrix of the baked substrate is poor, and the mechanical properties are poor.
【0008】[0008]
【作用】ガラスセラミック組成物は通常の方法で製造さ
れる。例えば原料を配合し、ボールミル等で十分粉砕混
合した後、白金るつぼ等に装入して加熱炉中で約140
0℃で1時間以上溶解した後冷却する。次にこのガラス
セラミック組成物を粉砕機により粉砕し、分級粒度調整
し、ガラスセラミック組成物の粉末が作られる。The glass-ceramic composition is manufactured by a conventional method. For example, after blending the raw materials, thoroughly crushing and mixing with a ball mill, etc., load them into a platinum crucible etc.
Melt at 0 ° C. for 1 hour or more and then cool. Next, this glass-ceramic composition is pulverized by a pulverizer and the classified particle size is adjusted to prepare a powder of the glass-ceramic composition.
【0009】本発明のガラスセラミック組成物は、重量
%で、PbO 15〜50、BaO2.5〜20、Al
2 O3 5〜15、SiO2 25〜45、B2 O3
0.5〜10、CaO 0〜5、ZnO 0〜15、S
b2 O3 0〜1の組成でなければならない。The glass-ceramic composition of the present invention comprises, by weight%, PbO 15-50, BaO 2.5-20, Al.
2 O 3 5-15, SiO 2 25-45, B 2 O 3
0.5-10, CaO 0-5, ZnO 0-15, S
b 2 O 3 must have a composition of 0 to 1.
【0010】PbOの含有量が少ないほどセルシアン結
晶の析出温度は高くなり、セルシアン結晶の析出量は少
なくなり、PbOの含有量が多いほどガラスの熱膨張係
数が大きくなる。即ちPbOの含有量が15重量%未満
ではセルシアン結晶の析出量が不十分であり、50重量
%を超えると熱膨張係数が大きくなりすぎるため、Pb
Oは15〜50重量%の範囲でなければならない。The smaller the PbO content, the higher the precipitation temperature of the celsian crystals, the smaller the precipitation amount of the celsian crystals, and the higher the PbO content, the higher the thermal expansion coefficient of the glass. That is, when the content of PbO is less than 15% by weight, the amount of precipitation of celsian crystals is insufficient, and when it exceeds 50% by weight, the thermal expansion coefficient becomes too large.
O should be in the range of 15-50% by weight.
【0011】BaOは、20重量%を超えるとガラスマ
トリックスとセルシアン相との熱膨脹率差が大きくなり
過ぎ焼成基板に割れが生じてしまい、また2.5重量未
満になるとセルシアン相の析出量が少なくなり過ぎるた
め、BaOは2.5〜20重量%の範囲でなければなら
ない。When BaO exceeds 20% by weight, the difference in coefficient of thermal expansion between the glass matrix and the celsian phase becomes too large and cracks occur in the fired substrate, and when it is less than 2.5% by weight, the amount of precipitation of the celsian phase is small. BaO must be in the range of 2.5 to 20 wt.
【0012】Al2 O3 は、15重量%を超えるとガラ
スセラミックの軟化温度が高くなり過ぎ、また5重量%
未満になるとセルシアン相の析出量が少なくなり過ぎる
ため、Al2 O3 は5〜15重量%の範囲でなければな
らない。When Al 2 O 3 exceeds 15% by weight, the softening temperature of the glass ceramic becomes too high, and 5% by weight
If it is less than the above range, the amount of precipitation of the celsian phase becomes too small. Therefore, Al 2 O 3 should be in the range of 5 to 15% by weight.
【0013】SiO2 は、45重量%を超えるとガラス
セラミックの軟化温度が高くなり過ぎ、また25重量%
未満になるとセルシアン相の析出量が少なくなり過ぎる
ため、SiO2 は25〜45重量%の範囲でなければな
らない。When SiO 2 exceeds 45% by weight, the softening temperature of the glass ceramic becomes too high, and 25% by weight
If it is less than this, the amount of precipitation of the celsian phase becomes too small, so that SiO 2 must be in the range of 25 to 45% by weight.
【0014】B2 O3 はガラスセラミックの粘度を下
げ、熱膨張係数を下げ、耐蝕性を向上させる働きがある
が、10重量%を超えるとセルシアン相の結晶成長を阻
害するようになり、また0.5重量%未満になるとセル
シアン相の析出量が少なくなり過ぎるため、B2 O3 は
0.5〜10重量%の範囲でなければならない。B 2 O 3 lowers the viscosity of the glass ceramic, lowers the coefficient of thermal expansion, and improves the corrosion resistance. However, if it exceeds 10% by weight, the crystal growth of the celsian phase is impaired. If it is less than 0.5% by weight, the precipitation amount of the celsian phase becomes too small, so that B 2 O 3 must be in the range of 0.5 to 10% by weight.
【0015】CaOはガラスセラミックの粘度を下げる
効果があるが、5重量%超えるとBaOの添加の効果が
低下する結果ガラスセラミックの軟化点が高くなり過ぎ
るため、CaOは0〜5重量%の範囲でなければならな
い。CaO has the effect of lowering the viscosity of the glass ceramic, but if it exceeds 5% by weight, the effect of the addition of BaO is reduced and the softening point of the glass ceramic becomes too high. Must.
【0016】ZnOは化学的耐久性を改善するが、15
重量%超えるとガラスセラミックの軟化点が下がりセル
シアン相の析出量が少なくなり過ぎるため、ZnOは0
〜15重量%の範囲でなければならない。ZnO improves the chemical durability, but 15
If the content exceeds 100% by weight, the softening point of the glass ceramic decreases and the amount of precipitation of the celsian phase becomes too small.
Must be in the range of ~ 15% by weight.
【0017】Sb2 O3 はガラスセラミックの清澄剤と
して配合されるが、1重量%超えると焼成膜の熱膨張係
数が大きくなりすぎるため、Sb2 O3 は0〜1重量%
の範囲でなければならない。Sb 2 O 3 is blended as a fining agent for glass ceramics, but if it exceeds 1% by weight, the coefficient of thermal expansion of the fired film becomes too large, so that Sb 2 O 3 is 0 to 1% by weight.
Must be in the range.
【0018】次に本発明のガラスセラミック組成物より
基板を作る方法を説明する。このガラスセラミック組成
物とバインダーとを混合混練し、粘度を調整してた後、
ドクターブレード等の方法によりグリーンシートに成形
する。なおバインダーは一般に使用されるものは総て使
用でき、例えばブチラール樹脂、アクリル樹脂、アセト
ン、トルエン、アルコール、フタル酸系可塑材等の混合
物が使用できる。Next, a method of making a substrate from the glass ceramic composition of the present invention will be described. After mixing and kneading the glass ceramic composition and a binder to adjust the viscosity,
The green sheet is formed by a method such as doctor blade. As the binder, any of those generally used can be used, and for example, a mixture of butyral resin, acrylic resin, acetone, toluene, alcohol, phthalic acid-based plasticizer and the like can be used.
【0019】次に、そのグリンシートを数枚積層し大気
雰囲気中で焼結処理を行う。焼結処理は最高加熱温度7
50〜950℃までの昇温時間を、例えば約40分にし
最高加熱温度で約20分間保持した後、室温まで冷却す
る。このガラスセラミック組成物は、焼結時に主にセル
シアンの微細結晶を均一に析出し、約10〜20分で析
出は完了し、加熱速度には依存しない。なお、走査示差
熱分析によると、ガラスセラミック組成物のセルシアン
相結晶化開始温度は約720℃である。Next, several green sheets are laminated and sintered in an air atmosphere. The maximum heating temperature for sintering is 7
The temperature rising time from 50 to 950 ° C. is set to, for example, about 40 minutes, the maximum heating temperature is maintained for about 20 minutes, and then the temperature is cooled to room temperature. This glass-ceramic composition uniformly deposits fine crystals of mainly celsian during sintering, the deposition is completed in about 10 to 20 minutes, and does not depend on the heating rate. According to scanning differential thermal analysis, the celsian phase crystallization start temperature of the glass ceramic composition is about 720 ° C.
【0020】[0020]
【実施例】表1に示す原料を調合したものを擂潰機で1
〜2時間粉砕混合した後、白金るつぼに入れ電気炉中で
約1300〜1400℃で2時間溶融した。この時白金
棒により溶融ガラスを攪拌してガラスを均一化し、ガラ
スが清澄化した後に、ステンレス板あるいはカーボン板
上にガラスを流出させ、冷めないうちに700〜800
℃に保持している電気炉に挿入して徐冷処理を行った。
なお、このガラスから脈理や気泡などの欠陥のない部分
を切り出して、転移点および屈伏点を測定した結果を合
わせて表1に示す。[Example] A mixture of the raw materials shown in Table 1 was used with a crusher 1
After pulverizing and mixing for ˜2 hours, the mixture was placed in a platinum crucible and melted in an electric furnace at about 1300 to 1400 ° C. for 2 hours. At this time, the molten glass was agitated with a platinum rod to homogenize the glass, and after the glass was clarified, the glass was allowed to flow out onto a stainless steel plate or a carbon plate and 700 to 800 before being cooled.
The sample was inserted into an electric furnace maintained at 0 ° C. and gradually cooled.
Table 1 also shows the results of measuring the transition point and the yield point by cutting out a portion free from defects such as striae and bubbles from this glass.
【0021】[0021]
【表1】 [Table 1]
【0022】上記ガラスをエチルアルコールあるいはイ
ソプロパノール等の有機溶剤を加えて粉砕し、60〜1
20℃の乾燥炉中で乾燥後、分級して平均粒径1〜3μ
mのガラスセラミック組成物の粉末を製造した。The above glass was crushed by adding an organic solvent such as ethyl alcohol or isopropanol to 60 to 1
After drying in a drying oven at 20 ° C, classification is performed and the average particle size is 1 to 3 µ
m of a glass-ceramic composition powder was produced.
【0023】そのガラスセラミック組成物100重量部
に対して、ブチラール樹脂1重量部とフタル酸系可塑材
1重量部とアセトン10重量部の割合で混合して作成し
たバインダー10重量部とを混合し、ドクターブレード
法により約100μm厚さのグリンシートに成形した。
このグリンシートを切断し複数枚積層圧着して、大気中
で最高温度750〜950までの昇温時間を40分にし
最高温度で20分間保持させ、焼成とともにセルシアン
の結晶析出処理を行った。100 parts by weight of the glass-ceramic composition was mixed with 1 part by weight of butyral resin, 1 part by weight of phthalic acid-based plastic material and 10 parts by weight of a binder prepared by mixing 10 parts by weight of acetone. A green sheet having a thickness of about 100 μm was formed by the doctor blade method.
A plurality of the green sheets were cut and laminated and pressure-bonded, and the temperature was raised to a maximum temperature of 750 to 950 in the air for 40 minutes and kept at the maximum temperature for 20 minutes.
【0024】その試料をX線回折法により析出結晶相の
同定を行った結果、セルシアン相が析出している事が分
った。なお実施例9〜14にはウィレマイト(Zn2 S
iO4 )も少量認められた。熱膨張係数を測定した結
果、焼成基板の熱膨張係数はアルミナ基板の熱膨張係数
75×10-7/℃よりも低く、シリコンチップの熱膨張
係数35×10-7/℃に近い優れた特性を有していた。
また測定周波数1MHzで誘電率を測定した結果、焼成
基板の誘電率はアルミナ基板の誘電率9〜10よりも低
い優れた特性を有していた。以上の結果をまとめて表2
に示す。また試料を研磨して薄片化して析出結晶相を偏
光顕微鏡で観察した結果、平均粒径3〜10μmのセル
シアン相がマトリックス中に均一に40〜80容積%析
出していた。As a result of identifying the precipitated crystal phase of the sample by the X-ray diffraction method, it was found that the celsian phase was precipitated. In addition, in Examples 9 to 14, willemite (Zn 2 S
A small amount of i0 4 ) was also observed. As a result of measuring the thermal expansion coefficient, the thermal expansion coefficient of the fired substrate is lower than the thermal expansion coefficient of 75 × 10 −7 / ° C. of the alumina substrate, and it has excellent characteristics close to the thermal expansion coefficient of 35 × 10 −7 / ° C. of the silicon chip. Had.
Moreover, as a result of measuring the dielectric constant at a measurement frequency of 1 MHz, it was found that the dielectric constant of the fired substrate was lower than the dielectric constant 9-10 of the alumina substrate and had excellent characteristics. Table 2 is a summary of the above results.
Shown in. Further, as a result of polishing and thinning the sample and observing the precipitated crystal phase with a polarizing microscope, a celsian phase having an average particle size of 3 to 10 μm was uniformly precipitated in the matrix in an amount of 40 to 80% by volume.
【0025】[0025]
【表2】 [Table 2]
【0026】[0026]
【発明の効果】以上詳述したように本発明により、大気
雰囲気下750〜950℃の低温焼成で、低熱膨脹率低
誘電率の焼成基板を得る一種類の結合材からなるガラス
セラミック組成物、及びその低温焼成ガラスセラミック
基板が提供できる。As described in detail above, according to the present invention, a glass-ceramic composition comprising one kind of binder to obtain a fired substrate having a low coefficient of thermal expansion and a low dielectric constant by low temperature firing at 750 to 950 ° C. in an air atmosphere, And a low temperature fired glass ceramic substrate thereof can be provided.
Claims (2)
2.5〜20、Al2 O3 5〜15、SiO2 2
5〜45、B2 O3 0.5〜10、CaO0〜5、Z
nO 0〜15、Sb2 O3 0〜1の組成を有するガ
ラスセラミック組成物。1. PbO 15-50, BaO in wt%
2.5-20, Al 2 O 3 5-15, SiO 2 2
5-45, B 2 O 3 0.5-10, CaO 0-5, Z
A glass-ceramic composition having a composition of nO 0-15 and Sb 2 O 3 0-1.
2.5〜20、Al2 O3 5〜15、SiO2 2
5〜45、B2 O3 0.5〜10、CaO0〜5、Z
nO 0〜15、Sb2 O3 0〜1の組成を有し、平
均粒径3〜10μmのセルシアンがマトリックス中に4
0〜80容積%分散析出していることを特徴とする低温
焼成ガラスセラミック基板。2. PbO 15-50, BaO in weight%.
2.5-20, Al 2 O 3 5-15, SiO 2 2
5-45, B 2 O 3 0.5-10, CaO 0-5, Z
celsian having a composition of nO 0 to 15 and Sb 2 O 3 0 to 1 and an average particle diameter of 3 to 10 μm is 4 in the matrix.
A low-temperature fired glass-ceramic substrate, wherein 0 to 80% by volume is dispersed and precipitated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4291976A JPH06116019A (en) | 1992-10-07 | 1992-10-07 | Glass-ceramic substrate fired at low temperature |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4291976A JPH06116019A (en) | 1992-10-07 | 1992-10-07 | Glass-ceramic substrate fired at low temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06116019A true JPH06116019A (en) | 1994-04-26 |
Family
ID=17775905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4291976A Pending JPH06116019A (en) | 1992-10-07 | 1992-10-07 | Glass-ceramic substrate fired at low temperature |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06116019A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348424B1 (en) | 1998-11-11 | 2002-02-19 | Nec Corporation | Low-temperature calcined glass ceramic and a manufacturing process therefor |
KR20030068935A (en) * | 2002-02-19 | 2003-08-25 | 오리온전기 주식회사 | Glass Composition For LTCC-M Back Panel For Plasma Display Panel |
WO2015045815A1 (en) * | 2013-09-30 | 2015-04-02 | 日本電気硝子株式会社 | Ceramic wiring substrate, ceramic green sheet for ceramic wiring substrate, and glass ceramic powder for ceramic wiring substrate |
-
1992
- 1992-10-07 JP JP4291976A patent/JPH06116019A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6348424B1 (en) | 1998-11-11 | 2002-02-19 | Nec Corporation | Low-temperature calcined glass ceramic and a manufacturing process therefor |
KR20030068935A (en) * | 2002-02-19 | 2003-08-25 | 오리온전기 주식회사 | Glass Composition For LTCC-M Back Panel For Plasma Display Panel |
WO2015045815A1 (en) * | 2013-09-30 | 2015-04-02 | 日本電気硝子株式会社 | Ceramic wiring substrate, ceramic green sheet for ceramic wiring substrate, and glass ceramic powder for ceramic wiring substrate |
JP2015092541A (en) * | 2013-09-30 | 2015-05-14 | 日本電気硝子株式会社 | Ceramic wiring board, ceramic green sheet for ceramic wiring board, and glass ceramic powder for ceramic wiring board |
CN105579418A (en) * | 2013-09-30 | 2016-05-11 | 日本电气硝子株式会社 | Ceramic wiring substrate, ceramic green sheet for ceramic wiring substrate, and glass ceramic powder for ceramic wiring substrate |
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