TW201534573A - Ceramic wiring substrate, ceramic green sheet for ceramic wiring substrate, and glass ceramic powder for ceramic wiring substrate - Google Patents

Abstract

A ceramic wiring substrate (1) comprises a ceramic substrate (10) and an internal conductor (20). The internal conductor (20) is arranged in the ceramic substrate (10). The ceramic substrate (10) comprises a glass, a first ceramic filler and a second ceramic filler. The thermal expansion coefficient of the first ceramic filler as measured in a temperature range from -40 DEG C to +125 DEG C is lower than the thermal expansion coefficient of the second ceramic filler as measured in a temperature range from -40 DEG C to +125 DEG C. The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

Description

Ceramic wiring board, ceramic green sheet for ceramic wiring board, and glass ceramic powder for ceramic wiring board

The present invention relates to a ceramic wiring board, a ceramic green sheet for a ceramic wiring board, and a glass ceramic powder for a ceramic wiring board.

Previously, when inspecting a semiconductor wafer, a probe card was placed on the semiconductor wafer, and the semiconductor wafer was electrically connected to the tester through the probe card.

The probe card usually has a test head that is in contact with a semiconductor wafer, a printed ceramic wiring substrate that is connected to the test machine, and a ceramic wiring substrate that is called an interposer substrate that connects the printed ceramic wiring substrate and the test head.

For example, in the patent document 1, a ceramic wiring board which consists of low-temperature baking ceramics containing glass is described as a ceramic wiring board which can be fired at low temperature.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-074823

The distance between the electrode pads of the printed ceramic wiring substrate is larger than the distance between the electrode pads of the test head. An electrode pad corresponding to the electrode pad of the printed ceramic wiring substrate is provided on the main surface on one side of the interposer substrate, and an electrode pad corresponding to the electrode pad of the test head is provided on the other main surface. The electrode pads on the main surface side and the electrode pads on the other main surface side are connected by an internal conductor. That is, it is important that the positional accuracy of the electrode pads of the two main faces is high at the insertion substrate.

Further, the inspection using the probe card is performed, for example, at a wide temperature range of -40 ° C to +125 ° C. Therefore, when the temperature is changed, the thermal expansion coefficient of the interposer substrate is approximated to the test head or the printed ceramic in such a manner that there is no difference between the distance between the electrode pads of the interposer substrate and the distance between the electrode pads of the test head or the printed ceramic wiring substrate. The coefficient of thermal expansion of the wiring substrate is preferred. That is, it is preferable to insert the substrate to match the material in which the thermal expansion coefficient is adjusted.

In addition, the thermal expansion coefficient of the test head is generally similar to the thermal expansion coefficient of the semiconductor wafer. Therefore, it is also required to reduce the thermal expansion coefficient of the interposer to the degree of thermal expansion coefficient of the semiconductor wafer.

However, in the ceramic wiring board described in Patent Document 1, it is difficult to achieve a thermal expansion coefficient such as a thermal expansion coefficient of the semiconductor wafer.

Furthermore, there is also a need to ensure the mechanical strength of the inserted substrate. begging.

A main object of the present invention is to provide a ceramic wiring board which can be fired at a low temperature, and which is a ceramic wiring board which can adjust a thermal expansion coefficient to a low degree and has high mechanical strength.

A ceramic wiring board according to the present invention includes a ceramic substrate and an internal conductor. The inner conductor is disposed in the ceramic substrate. The ceramic substrate includes glass, a first ceramic filler, and a second ceramic filler. The thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to + 125 ° C is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of -40 ° C to + 125 ° C. The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

In the ceramic wiring board according to the present invention, it is preferable that the thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to + 125 ° C is -8 to +5 ppm / ° C, and the three-point bending of the second ceramic filler The strength is 400~800MPa.

In the ceramic wiring board according to the present invention, it is preferable that the ceramic substrate contains three or more kinds of ceramic fillers, and the first ceramic filler has three or more types of ceramics having a thermal expansion coefficient in a temperature range of -40 ° C to + 125 ° C. The lowest ceramic filler in the filler, the three-point bending strength of each ceramic filler is the highest among the three or more ceramic fillers.

In the ceramic wiring board according to the present invention, it is preferable that the ceramic substrate is made of glass, a first ceramic filler, and a second ceramic filler. to make.

In the ceramic wiring board according to the present invention, it is preferable that the first ceramic filler is a zinc oxide filler and the second ceramic filler is an alumina filler.

In the ceramic wiring substrate according to the present invention, it is preferable that the mass ratio of glass to alumina filler and zinc silicate filler (glass: alumina filler and zinc silicate filler) is 30:70 to 65:35. Within the range, the mass ratio of the alumina filler to the zinc silicate filler (alumina filler: zinc silicate filler) is in the range of 20:80 to 60:40.

The average particle size of the zinc ruthenate filler is preferably smaller than the average particle size of the alumina filler.

The glass is preferably borosilicate glass.

Glass, as a glass composition, expressed in mass percent, preferably containing 60 to 80% SiO ₂ , 10 to 30% B ₂ O ₃ , Li ₂ O+Na ₂ O+K ₂ O 1 to 5%, and MgO+ CaO+SrO+BaO 0~20%.

The thermal expansion coefficient of the ceramic substrate in the temperature range of -40 ° C to + 125 ° C is preferably 4 ppm / ° C or less.

The ceramic green sheet for a ceramic wiring board according to the present invention includes glass, a first ceramic filler, and a second ceramic filler, and the first ceramic filler has a thermal expansion coefficient ratio in the temperature range of -40 ° C to + 125 ° C. The ceramic filler has a lower thermal expansion coefficient in the temperature range of -40 ° C to +125 ° C, and the 3 point bending strength of the second ceramic filler is higher than the 3 point bending strength of the first ceramic filler.

Glass ceramic powder for ceramic wiring substrate according to the present invention Finally, the glass, the first ceramic filler and the second ceramic filler are included, and the first ceramic filler has a thermal expansion coefficient in a temperature range of -40 ° C to + 125 ° C than the second ceramic filler in a temperature range of -40 ° C to + 125 The coefficient of thermal expansion of °C is lower, and the three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

According to the present invention, it is possible to provide a ceramic wiring board which can be fired at a low temperature, and a ceramic wiring board which can adjust a thermal expansion coefficient to a low degree and which has high mechanical strength.

1‧‧‧Ceramic wiring substrate

10‧‧‧Ceramic substrate

10a‧‧‧1st main face

10b‧‧‧2nd main face

11‧‧‧Ceramic layer

20‧‧‧Internal conductor

21‧‧‧Interlayer electrodes

22‧‧‧via ole electrodes

31,32‧‧‧electrode pads

Fig. 1 is a schematic cross-sectional view showing a ceramic wiring board according to an embodiment of the present invention.

Fig. 2 is a graph showing the relationship between the mass ratio of the glass to the filler of the ceramic substrate (mass percentage of glass) and the relative density and mechanical strength of the ceramic wiring board.

Hereinafter, an example of a preferred embodiment for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited by the following embodiments.

1 is a ceramic wiring board according to the embodiment. Pattern profile. In the ceramic wiring board 1 shown in FIG. 1, a ceramic wiring board which is required to have a small thermal expansion coefficient and high mechanical strength is generally used. The ceramic wiring board 1 can be used, for example, as an interposer substrate of a probe card.

The ceramic wiring board 1 has a ceramic substrate 10. The ceramic substrate 10 has first and second main faces 10a and 10b. The ceramic substrate 10 is composed of a laminate of a plurality of ceramic layers 11.

Inside the ceramic substrate 10, a plurality of internal conductors 20 are disposed. The respective inner conductors 20 penetrate the interlayer electrodes 21 located between the adjacent ceramic layers 11, and the ceramic layers 11 have inter-layer electrodes 21 interposed therebetween in a direction in which the ceramic layers 11 are connected to face the ceramic layers 11. Via hole electrode 22.

The plurality of inner conductors 20 are provided across the first main surface 10a and the second main surface 10b of the ceramic substrate 10. The end portion of the inner conductor 20 on the first main surface 10a side is connected to the electrode pad 31 provided on the first main surface 10a. The end portion of the inner conductor 20 on the second main surface 10b side is connected to the electrode pad 32 provided on the second main surface 10b.

The distance between adjacent electrode pads 32 is longer than the distance between adjacent electrode pads 31. Therefore, when the ceramic wiring board 1 is used as an interposer, the test head is connected to the second main surface 10b side, and the printed ceramic wiring board is connected to the first main surface 10a side.

Further, the inner conductor 20 and the electrode pads 31, 32 may be formed of a suitable conductive material. The inner conductor 20 and the electrode pads 31, 32 may each be formed of at least one of metals such as Pt, Au, Ag, Cu, Ni, and Pd.

The ceramic substrate 10 is made of a low-temperature fired ceramic containing glass. Specifically, the ceramic substrate 10 includes glass, a first ceramic filler, and a second ceramic filler. Next, the thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to + 125 ° C is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of -40 ° C to + 125 ° C. The three-point bending strength of the second ceramic filler is higher than the three-point bending strength of the first ceramic filler.

The glass improves the compactness (relative density) of the ceramic substrate 10 and improves the mechanical strength of the ceramic substrate 10.

The ceramic filler can adjust the thermal expansion coefficient and mechanical strength in the temperature range of -40 ° C to + 125 ° C which cannot be adjusted by the glass monomer.

The ceramic filler contains a first ceramic filler having a low thermal expansion coefficient in a temperature range of -40 ° C to +125 ° C and a second ceramic filler having a high three-point bending strength of the ceramic filler, so that the glass is adjusted by The mass ratio of these ceramic fillers can appropriately adjust the thermal expansion coefficient of the ceramic substrate 10 while securing the mechanical strength of the ceramic substrate 10. In short, the first ceramic filler can reduce the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of -40 ° C to +125 ° C, and the mechanical strength of the ceramic substrate 10 can be improved by the second ceramic filler.

Further, the thermal expansion coefficient of the ceramic filler of the present specification in the temperature range of -40 ° C to + 125 ° C is a thermal expansion coefficient of a thin plate-shaped sintered body having a thickness of 3.0 mm produced by the following method.

Moreover, the three-point bending strength of the ceramic filler of the present specification is a thin plate-shaped fire having a thickness of 3.0 mm produced by the following method. The knot was measured by the method according to JIS R1601 (2008).

First, 100 parts by mass of a ceramic filler having an average particle diameter of 2 μm was mixed with 15 parts by mass of polyvinyl butyral (PVB), 3 parts by mass of benzyl butyl phthalate, and 50 parts by mass of toluene, and kneaded to prepare a slurry. Next, the slurry was formed into a circular thin plate shape having a diameter of 20.32 cm (8 inches) and a thickness of 150 μm by a doctor blade method to prepare a green sheet. Next, eight green sheets were laminated, thermocompression bonded at 90 ° C and 30 MPa, and then degreased at 450 ° C, and then sintered at 1600 ° C to prepare a sintered body. Finally, the sintered body was polished until a thickness of 3.0 mm was obtained to obtain a thin plate-shaped sintered body.

The ceramic substrate 10 may also include three or more kinds of ceramic fillers. That is, a ceramic filler other than the first ceramic filler and the second ceramic filler may be included.

In this case, the first ceramic filler has the lowest thermal expansion coefficient in the temperature range of -40 ° C to 125 ° C of three or more kinds of ceramic fillers, and the second ceramic filler has three or more three-point bending strengths. The highest among ceramic fillers.

The ceramic substrate 10 preferably contains two or more kinds of ceramic fillers. That is, by adjusting the mass ratio of the glass, the first ceramic filler, and the second ceramic filler, the thermal expansion coefficient of the ceramic substrate 10 can be easily reduced, and the mechanical strength of the ceramic substrate 10 can be improved.

The thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to + 125 ° C is preferably -8 to +5 ppm / ° C. Thereby, the ceramic substrate 10 having a thermal expansion coefficient close to that of the semiconductor wafer can be obtained. The thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to +125 ° C is -5~ It is preferably +4 ppm/°C, more preferably -3 to +3 ppm/°C.

Examples of the first ceramic filler include a zinc oxide filler, a cordierite filler, a β-spodumene filler, a mullite filler, and a zirconia ceramic. Filler (ZrSiO ₄ , ZrW ₂ O ₈ , (ZrO ₂ )P ₂ O ₇ , KZr ₂ (PO ₄ ) ₃ , Zr ₂ (WO ₄ )(PO ₄ ) ₂ ), and the like. Among them, zinc silicate filler is preferred. By using the zinc ruthenate filler, the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of -40 ° C to + 125 ° C can be reduced to, for example, 4 ppm / ° C or less, and can be reduced to 3.6 ppm / ° C or less. Further, zinc antimonate is a cerium/zinc composite oxide. Zinc phthalate is generally represented by ZnSiO ₄ .

The 3 point bending strength of the second ceramic filler is preferably 400 to 800 MPa. Thereby, the ceramic substrate 10 having high mechanical strength can be obtained. The three-point bending strength of the second ceramic filler is preferably 450 to 800 MPa, more preferably 500 to 800 MPa.

Examples of the second ceramic filler include an alumina filler and a zirconia filler. Among them, an alumina filler is preferred. The mechanical strength of the ceramic substrate 10 can be sufficiently increased by using an alumina filler.

The ceramic substrate 10, for example, in the case of including an alumina filler and a zinc silicate filler, can adjust the thermal expansion coefficient of the ceramic substrate 10 by adjusting the mass ratio of the alumina filler to the zinc silicate filler, and can guarantee As the mechanical strength of the ceramic substrate 10. In short, the thermal expansion coefficient can be reduced by the zinc ruthenate filler, and the mechanical strength of the ceramic substrate 10 can be improved by the alumina filler. this Further, the thermal expansion coefficient of the ceramic substrate 10 in the temperature range of -40 ° C to + 125 ° C can be reduced to, for example, 4 ppm / ° C or less, and can be reduced to 3.6 ppm / ° C or less.

2 is a graph showing the relationship between the mass ratio of the glass to the filler of the ceramic substrate 10 and the relative density (indicated by a solid line) and the mechanical strength (three-point bending strength) (indicated by a broken line) of the ceramic wiring board. Further, the relative density D is expressed by the measured density/theoretical density × 100 (%), (the theoretical density is a value calculated from the mixing ratio of the theoretical density of glass and ceramic to the horizontal axis). As shown in Fig. 2, the relative density increases with an increase in the glass content until the glass content reaches a certain value, and the three-point bending strength also increases as the relative density increases. When the glass content is a certain value or more, the relative density is about 100%, and the relative density does not increase when the glass content is further increased, and the three-point bending strength which increases with an increase in the relative density does not increase. On the other hand, as the glass content increases, the content of the filler decreases, and as a result, the three-point bending strength also gradually decreases. From these results, it is understood that the mass ratio of glass to alumina filler and zinc silicate filler (glass: alumina filler and zinc silicate filler) is 30 in terms of improving the mechanical strength of the ceramic substrate 10. It is better in the range of 70~65:35, and better in the range of 40:60~60:40.

In the ceramic substrate 10, the mass ratio of the zinc silicate filler to the total amount of the alumina filler and the zinc silicate filler (the total amount of the zinc silicate filler/alumina filler and the zinc silicate filler) is too small. In addition, the mechanical strength of the ceramic substrate 10 is improved. However, as the thermal expansion coefficient of the ceramic substrate 10 is increased, the dielectric constant tends to be high. Zinc citrate filler for alumina filling When the mass ratio of the total amount of the filler and the zinc silicate filler (the total amount of the zinc silicate filler/alumina filler and the zinc silicate filler) is too large, the thermal expansion coefficient of the ceramic substrate 10 becomes small. The dielectric constant also becomes low, and the mechanical strength of the ceramic substrate 10 also tends to be low. That is, the mass ratio of the alumina filler to the zinc silicate filler (the alumina filler) is maintained from the viewpoint of maintaining the mechanical strength of the ceramic substrate 10 high while reducing the thermal expansion coefficient of the ceramic substrate 10 and lowering the dielectric constant. The total amount of the zinc silicate filler is preferably in the range of 20:80 to 60:40, and more preferably in the range of 30:70 to 50:50.

The average particle diameter of the zinc ruthenate filler is preferably smaller than the average particle diameter of the alumina filler, and more preferably 1/2 or less. In this case, the filling rate of the filler is increased and the mechanical strength is improved.

The glass in the ceramic substrate 10 is preferably borosilicate glass. By using borosilicate glass, it is easy to reduce the thermal expansion coefficient of the ceramic substrate 10. Further, the mechanical strength of the ceramic substrate 10 can be improved.

Specifically, the borosilicate glass, as a glass composition, is expressed by mass percentage, and preferably contains 60 to 80% of SiO ₂ , 10 to 30% of B ₂ O ₃ , and Li ₂ O+Na ₂ O+K ₂ O 1 . ~5% and MgO+CaO+SrO+BaO 0~20%.

Hereinafter, the percentages not specifically stated are percentages by mass.

SiO ₂ is a component of the skeleton forming the glass. The SiO ₂ content is preferably 60 to 80% by mass percentage. When the content of SiO ₂ is small, it may be difficult to vitrify. On the other hand, when the content is increased, the melting temperature becomes high and it becomes difficult to melt. A more preferable range of the SiO ₂ content is 65 to 75%.

B ₂ O ₃ is a component that forms a glass skeleton while expanding the vitrification range to stabilize the glass. The B ₂ O ₃ content is preferably 10 to 30% by mass percentage. When the content of B ₂ O ₃ is small, the melting temperature becomes high and it tends to be difficult to melt. On the other hand, when the B ₂ O ₃ content is increased, the thermal expansion coefficient of the ceramic wiring board 1 tends to increase. A more preferable range of the B ₂ O ₃ content is 15 to 25%.

The alkali metal oxide (Li ₂ O, Na ₂ O, K ₂ O) is a component which lowers the viscosity of the molten glass and makes the melting easier. The content of the alkali metal oxide (total amount) is preferably from 1 to 5% by mass percentage. When the content of the alkali metal oxide is small, there is a case where the effect of lowering the viscosity is lowered. On the other hand, when the content of the alkali metal oxide increases, the water resistance tends to decrease. A more preferable range of the alkali metal oxide content is 2 to 4%.

The alkaline earth metal oxides (MgO, CaO, SrO, and BaO) are components which reduce the viscosity of the molten glass and make the melting easy. The content (total amount) of the alkaline earth metal oxide is preferably 0 to 20% by mass percentage. When the content of the alkaline earth metal oxide is increased, the glass tends to be unstable, and the glass tends to lose transparency (devitrification) when the glass is molten. A more preferable range of the alkaline earth metal oxide content is 5 to 15%.

Next, a method of manufacturing the ceramic wiring board 1 will be described.

First, a glass ceramic powder for a ceramic wiring board including the glass powder, the first ceramic filler, and the second ceramic filler is prepared. Here, the glass ceramic powder for the ceramic wiring board is preferably the first ceramic. The filler is a willemite filler, preferably the second ceramic filler is an alumina filler. The mass ratio of glass to alumina filler and zinc silicate filler (glass: alumina filler and zinc silicate filler) is preferably in the range of 30:70 to 65:35, 40:60 to 60: 40 is better in the range. The mass ratio of alumina filler to zinc silicate filler (alumina filler: zinc silicate filler) is preferably in the range of 20:80 to 60:40, and in the range of 30:70 to 50:50. For better. The average particle diameter of the zinc ruthenate filler is preferably smaller than the average particle diameter of the alumina filler, and more preferably 1/2 or less of the average particle diameter of the alumina filler.

The glass is preferably a borosilicate type glass, and the borosilicate type glass having the above composition is more preferable. The average particle diameter of the glass powder is preferably in the range of 1 μm to 5 μm.

Next, a binder containing a resin, a plasticizer, a solvent, or the like is added to the glass ceramic powder for a ceramic wiring board, and a slurry is prepared by kneading. The slurry is formed into a thin plate shape by a doctor blade method or the like to prepare a ceramic green sheet for a ceramic wiring board containing glass, an alumina filler, and a zinc silicate filler.

Next, a via hole is formed in the ceramic green sheet. The formation of the through holes can be performed, for example, by irradiating laser light, mechanical punching, or the like.

Next, a conductive paste for forming the through-hole electrode 22 is filled inside the formed through hole. Further, a conductive paste for forming the interlayer electrode 21 and the electrode pads 31, 32 is applied over the ceramic green sheets.

Thereafter, the ceramic green sheets were appropriately laminated to obtain a laminate. The ceramic wiring board 1 can be completed by firing the laminate.

In the following, the present invention will be described in detail with reference to the specific embodiments. However, the present invention is not limited thereto, and may be modified as appropriate without departing from the scope of the invention.

[Example 1]

In the mass percentage, the glass raw material was blended so as to be SiO ₂ 70%, B ₂ O ₃ 28%, and K ₂ O 2%, and the platinum raw material was poured into a glass raw material, and melted at 1600 ° C to obtain molten glass. The molten glass was supplied between two water-cooled two rotating rolls which were water-cooled, and the molten glass was extended to obtain a film-like glass.

The glass thus obtained was pulverized by a ball mill to obtain a glass powder having an average particle diameter of 2.2 μm.

100 parts by mass of a mixed powder prepared by dissolving 25 parts by mass of alumina powder having an average particle diameter of 2.0 μm and 25 parts by mass of zinc niobate powder having an average particle diameter of 0.8 μm as a glass powder of 45 parts by mass, mixed with polyethylene condensate 15 parts by mass of aldehyde (PVB), 3 parts by mass of benzyl butyl phthalate and 50 parts by mass of toluene were kneaded, and then a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

The green sheets were press-formed to obtain a circular green sheet molded body having a diameter of 20.32 cm (8 inches). Next, the green sheet molded body was formed into a through hole having a diameter of 100 μm and a gap of 500 μm by a laser boring machine, and the via hole conductor was buried by printing. In addition, interlayers are formed by printing a conductive paste. Electrode and electrode pads. Thereafter, the green sheet molded body was laminated, and as a restraining member, an alumina green sheet composed of an alumina filler was laminated to prepare a laminate.

Next, the laminate was thermally pressed at 90 ° C and 30 MPa. Thereafter, the laminate was degreased by heat treatment at 450 ° C, and then sintered at 850 ° C to obtain a sintered body. The restraint member was removed by the sintered body obtained by the polishing to prepare a ceramic wiring board having a thickness of 3.0 mm.

The obtained ceramic wiring board had a thermal expansion coefficient of 3.9 ppm/° C. in a temperature range of -40 to 125 ° C, and was almost the same as the thermal expansion coefficient of the semiconductor wafer.

The three-point bending strength of the ceramic wiring board measured by the method according to JIS R1601 (2008) is 300 MPa, and has sufficient strength.

Next, the ceramic wiring board is used for a probe card, and the probe wafer is inspected at a temperature range of -40 to +125 ° C to inspect the semiconductor wafer without any problem.

[Embodiment 2]

A ceramic wiring board was produced in the same manner as in Example 1 except for the following points.

The composition of the glass raw material is represented by mass percentage, and is SiO ₂ 65%, B ₂ O ₃ 15%, CaO 16%, and K ₂ O 4%.

The average particle diameter of the glass powder was 2.0 μm.

For filling with 40% by mass of glass powder, alumina 100 parts by mass of the mixed powder prepared by mixing 25% by mass of the powder of the powder and 35% by mass of the zinc silicate filler powder, 15 parts by mass of the methacrylic resin, 3 parts by mass of benzyl butyl phthalate, and 50 parts by mass of toluene After the kneading, a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

The obtained ceramic wiring board had a thermal expansion coefficient of 3.4 ppm/° C. in a temperature range of -40 to 125 ° C, which was almost the same as the thermal expansion coefficient of the semiconductor wafer.

The ceramic wiring board measured by the method of JIS R1601 (2008) has a three-point bending strength of 280 MPa and has sufficient strength.

Next, the ceramic wiring board is used for a probe card, and the probe wafer is inspected at a temperature range of -40 to +125 ° C to inspect the semiconductor wafer without any problem.

(Comparative example)

A ceramic wiring board was produced in the same manner as in Example 1 except for the following points.

100 parts by mass of the mixed powder prepared to be 40 parts by mass of the glass powder and 40 parts by mass of the alumina filler powder, and 15 parts by mass of polyvinyl butyral (PVB) and 3 parts of benzyl butyl phthalate were mixed. After the mixture and 50 parts by mass of toluene were kneaded, a green sheet having a thickness of 150 μm was obtained by a doctor blade method.

The obtained ceramic wiring substrate has a thermal expansion coefficient of 6.2 ppm/° C. in a temperature range of -40 to 125 ° C, which is a heat than a semiconductor wafer. A larger value of the expansion coefficient.

The three-point bending strength of the ceramic wiring board measured by the method according to JIS R1601 (2008) was 280 MPa.

Next, this ceramic wiring board was used for a probe card, and the probe card was used to inspect the semiconductor wafer at a temperature range of -40 to +125 ° C. Since the ceramic wiring substrate was expanded, the semiconductor wafer could not be accurately inspected.

1‧‧‧Ceramic wiring substrate

10‧‧‧Ceramic substrate

10a‧‧‧1st main face

10b‧‧‧2nd main face

11‧‧‧Ceramic layer

20‧‧‧Internal conductor

21‧‧‧Interlayer electrodes

22‧‧‧via hole electrode

31,32‧‧‧electrode pads

Claims (12)

A ceramic wiring board comprising: a ceramic substrate; and an inner conductor disposed in the ceramic substrate, wherein the ceramic substrate includes glass, a first ceramic filler, and a second ceramic filler, The thermal expansion coefficient of the first ceramic filler in the temperature range of -40 ° C to + 125 ° C is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of -40 ° C to + 125 ° C, and the third ceramic filler has 3 points. The bending strength is higher than the three-point bending strength of the first ceramic filler. The ceramic wiring board of claim 1, wherein the first ceramic filler has a thermal expansion coefficient of -8 to +5 ppm/° C. in a temperature range of -40 ° C to +125 ° C, and 3 points of the second ceramic filler. The bending strength is 400 to 800 MPa. The ceramic wiring board of claim 1 or 2, wherein the ceramic substrate comprises three or more kinds of ceramic fillers; and the first ceramic filler has a thermal expansion coefficient in a temperature range of -40 ° C to + 125 ° C in the above three types Among the above ceramic fillers, the three-point bending strength of each of the ceramic fillers of the second ceramic filler is the highest among the three or more ceramic fillers. For example, the ceramic wiring substrate of claim 1 or 2, wherein The ceramic substrate is composed of glass, a first ceramic filler, and a second ceramic filler. The ceramic wiring board according to any one of claims 1 to 4, wherein the first ceramic filler is a zinc oxide filler, and the second ceramic filler is an alumina filler. The ceramic wiring board of claim 5, wherein a mass ratio of the glass to the alumina filler and the zinc silicate filler (the glass: the alumina filler and the zinc silicate filler) is 30 In the range of 70 to 65:35, the mass ratio of the alumina filler to the zinc silicate filler (the aforementioned alumina filler: the zinc silicate filler) is in the range of 20:80 to 60:40. . The ceramic wiring board of claim 5 or 6, wherein the zinc silicate filler has an average particle diameter smaller than an average particle diameter of the alumina filler. The ceramic wiring board according to any one of claims 1 to 7, wherein the glass is borosilicate glass. The ceramic wiring board of claim 8, wherein the glass comprises, as a glass composition, SiO ₂ 60 to 80%, B ₂ O ₃ 10 to 30%, and Li ₂ O+Na ₂ O+ as a mass percentage. K ₂ O 1~5% and MgO+CaO+SrO+BaO 0~20%. A ceramic wiring substrate according to any one of claims 1 to 9, wherein The thermal expansion coefficient of the ceramic substrate in the temperature range of -40 ° C to + 125 ° C is 4 ppm / ° C or less. A ceramic green sheet for a ceramic wiring board, characterized in that the ceramic green sheet for a ceramic wiring board comprises glass, a first ceramic filler and a second ceramic filler, and the first ceramic filler has a temperature range of -40 ° C. The thermal expansion coefficient of +125 ° C is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of -40 ° C to +125 ° C, and the three-point bending strength of the second ceramic filler is 3 points higher than that of the first ceramic filler. The bending strength is higher. A glass ceramic powder for a ceramic wiring board, characterized in that the glass ceramic powder for a ceramic wiring board comprises glass, a first ceramic filler, and a second ceramic filler, and the first ceramic filler has a temperature range of -40 ° C to + 125 The thermal expansion coefficient of °C is lower than the thermal expansion coefficient of the second ceramic filler in the temperature range of -40 ° C to +125 ° C, and the three-point bending strength of the second ceramic filler is three-point bending strength of the first ceramic filler. higher.