JP2015070151A - 半導体装置とその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 362
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 150000001875 compounds Chemical class 0.000 claims abstract description 275
- 239000012535 impurity Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 311
- 239000000463 material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 11
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229940126062 Compound A Drugs 0.000 description 2
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
Description
図1に示すように、半導体装置100は横型であり、サファイア基板2、バッファ層4、第1化合物半導体層6、第2化合物半導体層8、第3化合物半導体層14、第4化合物半導体層16、ゲート電極18、ソース電極20及びドレイン電極10を備えている。
半導体装置100の第1製造方法について説明する。図2に示すように、サファイア基板2の表面にAlNを材料とするバッファ層4を成長させる。その後、GaNを材料とする第1化合物半導体層6を結晶成長させ(第1工程)、AlGaNを材料とする第2化合物半導体層8を結晶成長させる(第2工程)。第2化合物半導体層8は、第1化合物半導体層6が所定の厚みに達した後に原料ガスを切り替える(Al含有ガスの供給を開始する)ことにより、第1化合物半導体層6の結晶成長に続いて連続的に結晶成長させることができる。なお、バッファ層4を設けることにより、第1化合物半導体層6の結晶構造が安定する。
図5〜図7を参照し、半導体装置100の第2製造方法について説明する。まず、第1製造方法と同様に、サファイア基板2上にバッファ層4,第1化合物半導体層6及び第2化合物半導体層8を形成する(図2を参照)。次に、図5に示すように、第2化合物半導体層8の表面に、p型不純物を含むp型AlGaN層30を結晶成長させる。p型不純物を含むp型AlGaN層30の厚みは、第3化合物半導体層14と第4化合物半導体層16の合計の厚み(図1を参照)に相当する。また、p型不純物の濃度は、第3化合物半導体層14の不純物濃度と同様に調整する。p型AlGaN層30は、第2化合物半導体層8の結晶成長に続いて連続的に結晶成長させることができる。
図8を参照し、半導体装置200について説明する。半導体装置200は縦型であり、ドレイン電極210と、ドレイン電極210上に設けられている半導体層240と、半導体層240の表面に設けられているソース電極220及びゲート電極218を備えている。半導体層240は、n型不純物を高濃度に含む基板234と、基板234よりもn型不純物を低濃度に含むドリフト層232と、p型不純物を高濃度に含む埋込みp型化合物半導体層230と、実質的に不純物が含まれていない第1化合物半導体層206及び第2化合物半導体層208と、p型不純物を高濃度に含む第3化合物半導体層214と、第3化合物半導体層214よりもp型不純物を低濃度に含む第4化合物半導体層216を備えている。
8:第2化合物半導体層
14:第3化合物半導体層
16:第4化合物半導体層
18:ゲート電極
100:半導体装置
Claims (7)
- 第1化合物半導体層と、
前記第1化合物半導体層上に設けられており、前記第1化合物半導体層よりもバンドギャップが大きい第2化合物半導体層と、
前記第2化合物半導体層上の一部に設けられているp型の第3化合物半導体層と、
前記第3化合物半導体層上に設けられており、前記第3化合物半導体層よりも高抵抗であるp型の第4化合物半導体層と、
前記第4化合物半導体層上に設けられているゲート電極と、
を備える半導体装置。 - 前記第4化合物半導体層に含まれるp型不純物の濃度が、前記第3化合物半導体層に含まれるp型不純物の濃度よりも薄い請求項1に記載の半導体装置。
- 前記第4化合物半導体層が、前記第3化合物半導体層よりも結晶性が低い請求項1又は2に記載の半導体装置。
- 前記第1化合物半導体層、前記第2化合物半導体層、前記第3化合物半導体層及び前記第4化合物半導体層は、窒化物半導体である請求項1から3のいずれか一項に記載の半導体装置。
- 第1化合物半導体層上に、前記第1化合物半導体層よりもバンドギャップが大きい第2化合物半導体層を形成する第1工程と、
前記第2化合物半導体層上の一部に、p型の第3化合物半導体層を形成する第2工程と、
前記第3化合物半導体層上に、前記第3化合物半導体層よりも高抵抗であるp型の第4化合物半導体層を形成する第3工程と、
前記第4化合物半導体層上に、ゲート電極を形成する第4工程と、
を備える半導体装置の製造方法。 - 前記第3工程は、前記第3化合物半導体層上に、前記第3化合物半導体層よりもp型不純物の濃度が薄い前記第4化合物半導体層を結晶成長させることを有する請求項5に記載の製造方法。
- 前記第2工程及び第3工程は、
前記第2化合物半導体層上の一部にp型の化合物半導体層を形成すること、
前記p型の化合物半導体層の表面にプラズマを照射すること、を有しており、
これにより、前記p型の化合物半導体層のうちのプラズマ照射されなかった部分が前記第3化合物半導体層となり、前記p型の化合物半導体層のうちのプラズマ照射された部分が前記第4化合物半導体層となる請求項5に記載の製造方法。
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JP2017076658A (ja) * | 2015-10-13 | 2017-04-20 | 株式会社豊田中央研究所 | 半導体装置 |
US9773900B2 (en) | 2015-10-02 | 2017-09-26 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
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JP7113233B2 (ja) | 2017-06-13 | 2022-08-05 | パナソニックIpマネジメント株式会社 | 窒化物半導体装置 |
CN109786455A (zh) * | 2019-01-29 | 2019-05-21 | 南方科技大学 | 一种高电子迁移率晶体管及其制作方法 |
CN112585751B (zh) | 2019-04-01 | 2021-11-12 | 新唐科技日本株式会社 | 电阻元件及功率放大电路 |
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