JP2015053339A - 半導体基板およびその製造方法 - Google Patents
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Abstract
Description
ここで、バンプの高さにバラつきがあると、まず高く形成されたバンプに荷重が集中することになり、当該バンプへのダメージが懸念される。このため、接合荷重の低減を図るために、バンプの上面を研削や化学機械研磨(CMP)等により平坦化することも検討されているが、数億個以上のバンプを均一にダメージなく平坦化することは容易ではなく、納期やコストの面でも問題がある。
本発明の他の目的は、電極高さのバラつきが抑えられた半導体基板を提供することである。
本発明の半導体基板によれば、電極高さのバラつきが抑えられた半導体基板とすることができる。
図1は、本実施形態の半導体基板1を示す平面図である。半導体基板1は、板状またはシート状の基板部10を備えている。
それぞれの素子領域11の境界には、スクライブライン15が形成されている。スクライブライン15は、素子領域11を個片化する際にダイシング等により切断されるものである。
図2は、半導体基板1における素子領域11の一部を示す模式的断面図である。素子領域11は、半導体素子として機能し得る拡散層12と、電極部20と拡散層12とを電気的に接続する回路配線31と、電極部20の電極20aどうしを電気的に接続する電位調節配線32とを備えている。
電極部20は、各素子領域11に形成されており、複数の電極20aを備える。各電極20aは、回路配線31に接続された電極パッド21と、電極パッド21上に無電解メッキにより形成された電極本体22とを備えている。電極パッド21および電極本体22は金属で形成されており、例えば、金、銅、ニッケル、およびこれら金属の少なくとも一つを含む合金等を材料として用いることができる。
回路配線31は、素子領域11を半導体素子として機能させるための回路を構成するように拡散層12と電極部20の各電極20aとを接続している。電位調節配線32は、図3に示す模式図のように、電極部20のすべての電極20aが電気的に接続されるように形成されている。
電位調節配線32による電極20aの接続は上述の回路とは無関係であり、電位調節配線32は上述の回路構成に寄与しない。したがって、半導体基板1の各素子領域11は、電位調節配線32の存在により回路が成立しない状態となっており、このままでは半導体素子として機能しない。
まず、図4に示すように、基板部となるシリコン基板10a上に、複数の素子領域を含む拡散層12を形成する(素子形成工程)。次に、図5に示すように、拡散層12上に回路配線31および電位調節配線32を含む配線層13を形成する。配線層13を形成する工程は、回路配線31を形成する第一配線工程と、電位調節配線32を形成する第二配線工程とを含んでおり、本実施形態では、第一配線工程と第二配線工程とが同一プロセスで同時に行われている。
拡散層12および配線層13の形成には、公知の積層型半導体装置の手法を用いることができる。
特性検査終了後、ダイシング等により各素子領域11を個片化すると、個片化された素子領域それぞれが半導体装置として完成する。
また、形成後に電位調節配線32を切断することで、各素子領域11の回路を容易に成立させ、ウエハ状態のまま各素子領域の特性検査を行うことができる。その結果、品質管理を効率よく行うことができる。
電位調節配線52の材料としては、導電性樹脂等が挙げられる。導電性樹脂としては、樹脂に導電性のフィラー等を混合したもの、樹脂自体が導電性を有するもののいずれも用いることができる。
拡散層12を形成した後、回路配線31を含む配線層13を形成する。続いて、図12に示すように、配線層13上に電極パッド21および電位調節配線52を形成する。電位調節配線52の形成は、電極パッド21形成の前後いずれに行われてもよい。また、電位調節配線52を電極パッド21と同一の材料で形成する場合は、電極パッド21と電位調節配線52とが同時に形成されてもよい。
また、電位調節配線を配線層13上に形成することで、配線層13内に電位調節配線を形成する領域を確保する必要がなくなるという利点もある。
また、電位調節配線52の材料としては、導電性樹脂の他に金、銅、ニッケル、およびこれら金属の少なくとも一つを含む合金等の金属を用いることができる。電位調節配線52の材料に金属を用いる場合には、アッシング処理に代えてレーザ光の照射や電圧印加を行うことで、電位調節配線52を切断することができる。
1a、51a 半導体基板
10 基板部
11 素子領域
20 電極部
20a 電極
21 電極パッド
22 電極本体
31 回路配線
32、52 電位調節配線
Claims (14)
- 半導体素子として機能し得る素子領域が複数設けられ、前記素子領域に、電極パッド上に電極本体が設けられた電極を複数有する電極部が形成されている半導体基板の製造方法であって、
基板部に複数の前記素子領域を形成する素子形成工程と、
前記素子領域と接続された回路配線を形成する第一配線工程と、
複数の前記電極パッドを形成する電極パッド形成工程と、
複数の前記電極パッドの少なくとも一部を電気的に接続する電位調節配線を形成する第二配線工程と、
前記第二配線工程後に、無電解めっきにより前記電極パッド上に前記電極本体を形成する電極形成工程と、
前記電極形成工程後に、前記電位調節配線による接続を解除する電位調節解除工程と、
を備える、半導体基板の製造方法。 - 前記第一配線工程と前記第二配線工程とが同時に行われる、請求項1に記載の半導体基板の製造方法。
- 前記素子形成工程と前記第二配線工程とが同時に行われる、請求項1に記載の半導体基板の製造方法。
- 前記電極パッド形成工程と前記第二配線工程とが同時に行われる、請求項1に記載の半導体基板の製造方法。
- 前記第二配線が導電性樹脂により形成される、請求項1に記載の半導体基板の製造方法。
- 前記電位調節解除工程がレーザ光の照射により行われる、請求項1から5のいずれか一項に記載の半導体基板の製造方法。
- 前記電位調節解除工程がアッシング処理により行われる、請求項5に記載の半導体基板の製造方法。
- 前記電位調節解除工程が前記電極間への電圧印加により行われる、請求項1から5のいずれか一項に記載の半導体基板の製造方法。
- 前記電位調節配線は、前記素子領域内のすべての前記電極を電気的に接続するように形成される、請求項1から8のいずれか一項に記載の半導体基板の製造方法。
- 前記複数の電極は、複数のグループに分けられており、前記電位調節配線は、各々の前記グループにおいて、前記グループ内のすべての前記電極を電気的に接続するように形成される、請求項1から8のいずれか一項に記載の半導体基板の製造方法。
- 半導体素子として機能し得る素子領域が複数設けられた基板部と、
前記基板部上に形成された電極パッドと、前記電極パッド上に形成された電極本体とを有する複数の電極からなり、前記素子領域に設けられた電極部と、
前記素子領域および前記電極の少なくとも一方に接続され、前記素子領域が半導体素子として機能するための回路を構成する回路配線と、
前記回路と無関係に複数の前記電極を電気的に接続する電位調節配線と、
を備える半導体基板。 - 前記電位調節配線が導電性樹脂で形成されている、請求項11に記載の半導体基板。
- 前記電位調節配線により、前記素子領域内の前記電極すべてが電気的に接続されている、請求項11または12に記載の半導体基板。
- 前記複数の電極は、複数のグループに分けられており、前記電位調節配線は、各々の前記グループにおいて、前記グループ内のすべての前記電極を電気的に接続している、請求項11または12に記載の半導体基板。
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Application Number | Priority Date | Filing Date | Title |
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JP2013184365A JP6084139B2 (ja) | 2013-09-05 | 2013-09-05 | 半導体基板およびその製造方法 |
PCT/JP2014/067551 WO2015033652A1 (ja) | 2013-09-05 | 2014-07-01 | 半導体基板およびその製造方法 |
US15/044,361 US9653416B2 (en) | 2013-09-05 | 2016-02-16 | Semiconductor substrate and manufacturing method thereof |
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JP2013184365A JP6084139B2 (ja) | 2013-09-05 | 2013-09-05 | 半導体基板およびその製造方法 |
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JP2015053339A true JP2015053339A (ja) | 2015-03-19 |
JP6084139B2 JP6084139B2 (ja) | 2017-02-22 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH05109657A (ja) * | 1991-10-21 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JPH0955398A (ja) * | 1995-08-10 | 1997-02-25 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
JP2002217196A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2006117963A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | めっき装置、半導体基板および金属膜の形成方法 |
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JP2000124279A (ja) * | 1998-10-19 | 2000-04-28 | Nkk Corp | ウエハバーンインに対応する半導体装置 |
KR100389037B1 (ko) * | 2001-04-11 | 2003-06-25 | 삼성전자주식회사 | 플립 칩형 반도체소자 및 그 제조방법 |
US6667195B2 (en) * | 2001-08-06 | 2003-12-23 | United Microelectronics Corp. | Laser repair operation |
JP4058619B2 (ja) * | 2001-10-25 | 2008-03-12 | セイコーエプソン株式会社 | 半導体ウエハ |
US7029761B2 (en) * | 2003-04-30 | 2006-04-18 | Mec Company Ltd. | Bonding layer for bonding resin on copper surface |
US7452803B2 (en) * | 2004-08-12 | 2008-11-18 | Megica Corporation | Method for fabricating chip structure |
US8587124B2 (en) * | 2007-09-21 | 2013-11-19 | Teramikros, Inc. | Semiconductor device having low dielectric insulating film and manufacturing method of the same |
JP5532870B2 (ja) * | 2009-12-01 | 2014-06-25 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP6021378B2 (ja) * | 2012-03-29 | 2016-11-09 | オリンパス株式会社 | 基板および半導体装置 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109657A (ja) * | 1991-10-21 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JPH0955398A (ja) * | 1995-08-10 | 1997-02-25 | Murata Mfg Co Ltd | 半導体装置の製造方法 |
JP2002217196A (ja) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2006117963A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | めっき装置、半導体基板および金属膜の形成方法 |
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JP6084139B2 (ja) | 2017-02-22 |
WO2015033652A1 (ja) | 2015-03-12 |
US20160163664A1 (en) | 2016-06-09 |
US9653416B2 (en) | 2017-05-16 |
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