JP2015028933A - 透過電子回折測定装置および透過電子回折パターンの測定方法 - Google Patents

透過電子回折測定装置および透過電子回折パターンの測定方法 Download PDF

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Publication number
JP2015028933A
JP2015028933A JP2014138331A JP2014138331A JP2015028933A JP 2015028933 A JP2015028933 A JP 2015028933A JP 2014138331 A JP2014138331 A JP 2014138331A JP 2014138331 A JP2014138331 A JP 2014138331A JP 2015028933 A JP2015028933 A JP 2015028933A
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Prior art keywords
transmission electron
electron diffraction
substance
diffraction pattern
camera
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JP2014138331A
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English (en)
Japanese (ja)
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JP2015028933A5 (enExample
Inventor
大輔 大柄根
Daisuke Ogarane
大輔 大柄根
大力　浩二
Koji Oriki
浩二 大力
高橋　正弘
Masahiro Takahashi
正弘 高橋
伊藤　俊一
Shunichi Ito
俊一 伊藤
絵里香 高橋
Erika Takahashi
絵里香 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014138331A priority Critical patent/JP2015028933A/ja
Publication of JP2015028933A publication Critical patent/JP2015028933A/ja
Publication of JP2015028933A5 publication Critical patent/JP2015028933A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/2055—Analysing diffraction patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20058—Measuring diffraction of electrons, e.g. low energy electron diffraction [LEED] method or reflection high energy electron diffraction [RHEED] method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/61—Specific applications or type of materials thin films, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2065—Temperature variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2803—Scanning microscopes characterised by the imaging method
    • H01J2237/2804—Scattered primary beam
    • H01J2237/2805—Elastic scattering

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2014138331A 2013-07-05 2014-07-04 透過電子回折測定装置および透過電子回折パターンの測定方法 Withdrawn JP2015028933A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014138331A JP2015028933A (ja) 2013-07-05 2014-07-04 透過電子回折測定装置および透過電子回折パターンの測定方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013141217 2013-07-05
JP2013141217 2013-07-05
JP2014138331A JP2015028933A (ja) 2013-07-05 2014-07-04 透過電子回折測定装置および透過電子回折パターンの測定方法

Publications (2)

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JP2015028933A true JP2015028933A (ja) 2015-02-12
JP2015028933A5 JP2015028933A5 (enExample) 2017-07-20

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JP2014138331A Withdrawn JP2015028933A (ja) 2013-07-05 2014-07-04 透過電子回折測定装置および透過電子回折パターンの測定方法

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US (1) US9244025B2 (enExample)
JP (1) JP2015028933A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
CN113906536B (zh) 2019-05-20 2024-04-19 埃尔迪科科学股份有限公司 用于带电粒子晶体学的衍射仪

Citations (6)

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JPS61243649A (ja) * 1985-04-19 1986-10-29 Hitachi Ltd 回析像同時表示電子顕微鏡
JPH05128991A (ja) * 1991-08-09 1993-05-25 Hikari Gijutsu Kenkyu Kaihatsu Kk 実時間表面モニター装置
JPH11111208A (ja) * 1997-09-30 1999-04-23 Ulvac Corp 反射電子回折装置
JP2006127805A (ja) * 2004-10-26 2006-05-18 Hitachi High-Technologies Corp 透過型電子顕微鏡装置
US20070023659A1 (en) * 2003-09-02 2007-02-01 Sergeevich Avilov A Method for measuring diffraction patterns from a transmission electron microscopy to determine crystal structures and a device therefor
JP2013110380A (ja) * 2011-07-08 2013-06-06 Semiconductor Energy Lab Co Ltd 酸化物半導体膜の作製方法、半導体装置の作製方法及び半導体装置

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US5140352A (en) * 1990-10-31 1992-08-18 Occipital, Inc. Ccd camera and method for fundus imaging
US5898177A (en) * 1996-08-08 1999-04-27 Hitachi, Ltd. Electron microscope
US6061085A (en) 1997-02-07 2000-05-09 Soft Imaging System Gmbh Camera system for a transmission electron microscope
JPH11250850A (ja) 1998-03-02 1999-09-17 Hitachi Ltd 走査電子顕微鏡及び顕微方法並びに対話型入力装置
TWI258583B (en) * 2003-01-30 2006-07-21 Test Research Inc Device and method for optical detection of printed circuit board
US7164462B2 (en) * 2004-03-03 2007-01-16 Louise Lamarre Filming using rear-projection screen and image projector
JP4262184B2 (ja) * 2004-10-12 2009-05-13 株式会社日立ハイテクノロジーズ 透過型電子顕微鏡およびそれを用いた像観察方法
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP2006196236A (ja) 2005-01-12 2006-07-27 Hitachi High-Technologies Corp 電子顕微鏡及び観察方法
JP4850654B2 (ja) * 2006-10-23 2012-01-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置および荷電粒子線装置用試料保持装置
JP2009152087A (ja) * 2007-12-21 2009-07-09 Jeol Ltd 透過電子顕微鏡
JP5226378B2 (ja) * 2008-04-28 2013-07-03 株式会社日立ハイテクノロジーズ 透過型電子顕微鏡、及び試料観察方法
JP2010117705A (ja) * 2008-10-14 2010-05-27 Olympus Corp バーチャルスライド作成システム用顕微鏡
JP2010214847A (ja) * 2009-03-18 2010-09-30 Fujifilm Corp 液滴吐出ヘッドおよび画像形成装置
DE102010003056B9 (de) * 2010-03-19 2014-07-31 Carl Zeiss Microscopy Gmbh Verfahren zur Erzeugung von Bildern einer Probe
KR20220150439A (ko) * 2012-11-08 2022-11-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
US9293544B2 (en) * 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243649A (ja) * 1985-04-19 1986-10-29 Hitachi Ltd 回析像同時表示電子顕微鏡
JPH05128991A (ja) * 1991-08-09 1993-05-25 Hikari Gijutsu Kenkyu Kaihatsu Kk 実時間表面モニター装置
JPH11111208A (ja) * 1997-09-30 1999-04-23 Ulvac Corp 反射電子回折装置
US20070023659A1 (en) * 2003-09-02 2007-02-01 Sergeevich Avilov A Method for measuring diffraction patterns from a transmission electron microscopy to determine crystal structures and a device therefor
JP2006127805A (ja) * 2004-10-26 2006-05-18 Hitachi High-Technologies Corp 透過型電子顕微鏡装置
JP2013110380A (ja) * 2011-07-08 2013-06-06 Semiconductor Energy Lab Co Ltd 酸化物半導体膜の作製方法、半導体装置の作製方法及び半導体装置

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US9244025B2 (en) 2016-01-26
US20150008321A1 (en) 2015-01-08

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