JP2015026830A5 - - Google Patents
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- Publication number
- JP2015026830A5 JP2015026830A5 JP2014126434A JP2014126434A JP2015026830A5 JP 2015026830 A5 JP2015026830 A5 JP 2015026830A5 JP 2014126434 A JP2014126434 A JP 2014126434A JP 2014126434 A JP2014126434 A JP 2014126434A JP 2015026830 A5 JP2015026830 A5 JP 2015026830A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- film
- oxide semiconductor
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000004140 cleaning Methods 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014126434A JP6426379B2 (ja) | 2013-06-19 | 2014-06-19 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013128920 | 2013-06-19 | ||
| JP2013128920 | 2013-06-19 | ||
| JP2014126434A JP6426379B2 (ja) | 2013-06-19 | 2014-06-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015026830A JP2015026830A (ja) | 2015-02-05 |
| JP2015026830A5 true JP2015026830A5 (https=) | 2017-06-29 |
| JP6426379B2 JP6426379B2 (ja) | 2018-11-21 |
Family
ID=52491209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014126434A Expired - Fee Related JP6426379B2 (ja) | 2013-06-19 | 2014-06-19 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6426379B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI686870B (zh) * | 2015-03-03 | 2020-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置、顯示裝置及使用該顯示裝置之電子裝置 |
| JP7023114B2 (ja) | 2015-11-20 | 2022-02-21 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、表示モジュール、電子機器 |
| US10263114B2 (en) * | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| US11302717B2 (en) | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
| US11726376B2 (en) | 2016-11-23 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
| TWI778959B (zh) * | 2017-03-03 | 2022-10-01 | 日商半導體能源硏究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| JP2022145974A (ja) * | 2021-03-22 | 2022-10-05 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100980020B1 (ko) * | 2003-08-28 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 |
| KR101244895B1 (ko) * | 2006-04-06 | 2013-03-18 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
| TWI567829B (zh) * | 2008-10-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2011043194A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2012094853A (ja) * | 2010-09-30 | 2012-05-17 | Kobe Steel Ltd | 配線構造 |
| KR101830170B1 (ko) * | 2011-05-17 | 2018-02-21 | 삼성디스플레이 주식회사 | 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법 |
-
2014
- 2014-06-19 JP JP2014126434A patent/JP6426379B2/ja not_active Expired - Fee Related
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