JP2015026830A5 - - Google Patents
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- JP2015026830A5 JP2015026830A5 JP2014126434A JP2014126434A JP2015026830A5 JP 2015026830 A5 JP2015026830 A5 JP 2015026830A5 JP 2014126434 A JP2014126434 A JP 2014126434A JP 2014126434 A JP2014126434 A JP 2014126434A JP 2015026830 A5 JP2015026830 A5 JP 2015026830A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- film
- oxide semiconductor
- forming
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000004140 cleaning Methods 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims 1
Claims (8)
前記酸化物半導体膜を覆うように、第１の導電膜を形成する工程と、
前記第１の導電膜上に、第２の導電膜を形成する工程と、
前記酸化物半導体膜と重なる領域の前記第２の導電膜を、選択的に除去する工程と、
前記第２の導電膜を覆い、かつ前記第２の導電膜から露出した前記第１の導電膜と接するように、第３の導電膜を形成する工程と、
前記酸化物半導体膜と重なる領域の前記第１の導電膜と前記第３の導電膜とを選択的に除去する工程と、
前記除去した後、洗浄処理を行う工程と、を有することを特徴とする半導体装置の作製方法。 The step of forming a source electrode and a drain electrode of a transistor including an oxide semiconductor film includes
So as to cover the oxide semiconductor film, forming a first conductive film,
On the first conductive film, forming a second conductive film,
The second conductive film in the region overlapping with the oxide semiconductor film, and selectively removing,
Forming a third conductive film so as to cover the second conductive film and to be in contact with the first conductive film exposed from the second conductive film ;
Selectively removing the said first conductive film in the region overlapping with the oxide semiconductor film and the third conductive film,
And a step of performing a cleaning process after the removal .
前記酸化物半導体膜を覆うように、第１の導電膜を形成する工程と、Forming a first conductive film so as to cover the oxide semiconductor film;
前記第１の導電膜上に、第２の導電膜を形成する工程と、Forming a second conductive film on the first conductive film;
前記酸化物半導体膜と重なる領域の前記第２の導電膜を、選択的に除去する工程と、Selectively removing the second conductive film in a region overlapping with the oxide semiconductor film;
前記第２の導電膜を覆い、かつ前記第２の導電膜から露出した前記第１の導電膜と接するように、第３の導電膜を形成する工程と、Forming a third conductive film so as to cover the second conductive film and to be in contact with the first conductive film exposed from the second conductive film;
前記酸化物半導体膜と重なる領域の前記第１の導電膜と前記第３の導電膜とを選択的に除去し、かつ前記酸化物半導体膜の上面を選択的に除去する工程と、Selectively removing the first conductive film and the third conductive film in a region overlapping with the oxide semiconductor film, and selectively removing an upper surface of the oxide semiconductor film;
前記除去した後、洗浄処理を行う工程と、を有することを特徴とする半導体装置の作製方法。And a step of performing a cleaning process after the removal.
前記第２の導電膜は、銅を含むことを特徴とする半導体装置の作製方法。 In claim 1 or claim 2 ,
The method for manufacturing a semiconductor device, wherein the second conductive film contains copper.
前記第１の導電膜は、前記第２の導電膜よりも融点が高い材料を含み、
前記第３の導電膜は、前記第２の導電膜よりも融点が高い材料を含むことを特徴とする半導体装置の作製方法。 In any one of Claim 1 thru | or 3 ,
The first conductive film is viewed including the second conductive material having a melting point higher than the film,
The method for manufacturing a semiconductor device, wherein the third conductive film includes a material having a melting point higher than that of the second conductive film .
前記第１の導電膜は、タングステン、チタン、モリブデン、クロム、またはタンタルを含むことを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 4 ,
The method for manufacturing a semiconductor device, wherein the first conductive film contains tungsten, titanium, molybdenum, chromium, or tantalum.
前記第３の導電膜は、タングステン、チタン、モリブデン、クロム、またはタンタルを含むことを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 5 ,
The method for manufacturing a semiconductor device, wherein the third conductive film contains tungsten, titanium, molybdenum, chromium, or tantalum.
前記第３の導電膜は、金属窒化物または金属酸化物であることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 6 ,
The method for manufacturing a semiconductor device, wherein the third conductive film is a metal nitride or a metal oxide.
前記洗浄処理に、リン酸を含む溶液を用いることを特徴とする半導体装置の作製方法。 In any one of Claims 1 thru | or 7 ,
A method for manufacturing a semiconductor device, wherein a solution containing phosphoric acid is used for the cleaning treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014126434A JP6426379B2 (en) | 2013-06-19 | 2014-06-19 | Method for manufacturing semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013128920 | 2013-06-19 | ||
| JP2013128920 | 2013-06-19 | ||
| JP2014126434A JP6426379B2 (en) | 2013-06-19 | 2014-06-19 | Method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015026830A JP2015026830A (en) | 2015-02-05 |
| JP2015026830A5 true JP2015026830A5 (en) | 2017-06-29 |
| JP6426379B2 JP6426379B2 (en) | 2018-11-21 |
Family
ID=52491209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014126434A Expired - Fee Related JP6426379B2 (en) | 2013-06-19 | 2014-06-19 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6426379B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108292684B (en) * | 2015-11-20 | 2022-06-21 | 株式会社半导体能源研究所 | Semiconductor device, method for manufacturing the same, or display device including the same |
| US10263114B2 (en) * | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
| US11302717B2 (en) | 2016-04-08 | 2022-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
| CN109964172A (en) | 2016-11-23 | 2019-07-02 | 株式会社半导体能源研究所 | Display device, display module and electronic equipment |
| TWI778959B (en) * | 2017-03-03 | 2022-10-01 | 日商半導體能源硏究所股份有限公司 | Semiconductor device and method for manufacturing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100980020B1 (en) * | 2003-08-28 | 2010-09-03 | 삼성전자주식회사 | Thin film transistor array panel and manufacturing method thereof |
| KR101244895B1 (en) * | 2006-04-06 | 2013-03-18 | 삼성디스플레이 주식회사 | Method for fabricating thin film transistor plate |
| TWI567829B (en) * | 2008-10-31 | 2017-01-21 | 半導體能源研究所股份有限公司 | Semiconductor device and method for manufacturing the same |
| WO2011043194A1 (en) * | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2012094853A (en) * | 2010-09-30 | 2012-05-17 | Kobe Steel Ltd | Wiring structure |
| KR101830170B1 (en) * | 2011-05-17 | 2018-02-21 | 삼성디스플레이 주식회사 | Oxide semiconductor device, method of forming an oxide semiconductor device, and display device having an oxide semiconductor device, method of manufacturing a display device having an oxide semiconductor device |
-
2014
- 2014-06-19 JP JP2014126434A patent/JP6426379B2/en not_active Expired - Fee Related
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