JP2015026824A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015026824A JP2015026824A JP2014121942A JP2014121942A JP2015026824A JP 2015026824 A JP2015026824 A JP 2015026824A JP 2014121942 A JP2014121942 A JP 2014121942A JP 2014121942 A JP2014121942 A JP 2014121942A JP 2015026824 A JP2015026824 A JP 2015026824A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 292
- 238000005530 etching Methods 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 229910052733 gallium Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002003 electron diffraction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Abstract
Description
トランジスタは、少なくとも、第1のゲート電極、第1のゲート電極の上方の第1の絶縁層、第1の絶縁層の上方の半導体層、半導体層と電気的に接続されたソース電極、及び半導体層と電気的に接続されたドレイン電極を有する。
第1のトランジスタの第1のゲート電極は、第2のトランジスタのソース電極又はドレイン電極の一方に電気的に接続されている。
第1のトランジスタの半導体層、第1のトランジスタのソース電極、第1のトランジスタのドレイン電極、第2のトランジスタの半導体層、第2のトランジスタのソース電極、及び、第2のトランジスタのドレイン電極の上方に第2の絶縁層がある。
トランジスタの半導体層は限定されないが、半導体層が酸化物半導体層であることが興味深い。
例えば、半導体装置は、第1の導電層を有し、前記第1の導電層の上方に第1の絶縁層を有し、前記第1の絶縁層の上方に酸化物半導体層を有し、前記酸化物半導体層と電気的に接続された第2の導電層を有し、前記酸化物半導体層と電気的に接続された第3の導電層を有し、前記第1の絶縁層の上方に第4の導電層を有し、前記酸化物半導体層の上方と前記第2の導電層の上方と前記第3の導電層の上方と前記第4の導電層の上方とに第2の絶縁層を有し、前記第2の絶縁層の上方に第5の導電層を有する。前記第1の絶縁層は、第1の開口を有し、前記第2の絶縁層は、第2の開口を有し、前記第2の絶縁層は、第3の開口を有し、前記第5の導電層は、前記第1の開口及び前記第2の開口を介して、前記第1の導電層と電気的に接続され、前記第5の導電層は、前記第3の開口を介して、前記第4の導電層と電気的に接続され、前記第4の導電層は、トランジスタのソース電極又はドレイン電極の一方として機能することができる第1の領域を有し、前記酸化物半導体層は、前記第1の導電層及び前記第5の導電層と重なる第2の領域を有する。
図1乃至図3に半導体装置の一例が示されている。
基板10の上方に導電層21がある。
導電層21及び導電層22の上方に絶縁層30がある。
絶縁層30の上方に半導体層41がある。
絶縁層30及び半導体層41の上方に、半導体層41と電気的に接続された導電層51がある。
半導体層41、半導体層42、導電層51、導電層52、導電層53、及び導電層54の上方に酸化物層61がある。
図3に一例を示すように、絶縁層30、酸化物層61、及び絶縁層62を貫通する開口81がある。
絶縁層62の上方に導電層71がある。
<コンセプト>
図4に半導体装置の一例が示されている。
図5に半導体装置の一例が示されている。
図6乃至図10に、半導体装置の一例が示されている。
図6乃至図8において、導電層23はトランジスタTr3のゲート電極として機能することができる領域を有する。
図9及び図10において、導電層24はトランジスタTr3のゲート電極として機能することができる領域を有する。
図1乃至図10において、トランジスタTr2のソース電極又はドレイン電極の他方を、トランジスタTr1のソース電極又はドレイン電極の一方と電気的に接続することができる(本実施の形態において、この接続は接続Dと呼ばれる)。
半導体装置は、半導体素子を有する装置である。
図19は、表示装置の画素回路である。
図20乃至図22に半導体装置の一例を示す。
例えば、図1乃至図3において、開口81を形成するためのエッチング時間は、開口82を形成するためのエッチング時間よりも長い。
基板の材料及び各層の材料を説明する。
例えば、層は、単膜又は積層膜である。
例えば、基板は、ガラス基板、プラスチック基板、及び金属基板等から選ぶことができる。
例えば、酸化物半導体は、インジウム(In)、スズ(Sn)、亜鉛(Zn)、又は、ガリウム(Ga)を有する。
酸化物半導体層が方向Xに沿ってc軸配向した結晶領域を有することによって、酸化物半導体層の密度が高くなる。
酸化物半導体層が積層膜であることは興味深い。
21 導電層
22 導電層
23 導電層
24 導電層
30 絶縁層
41 半導体層
42 半導体層
43 半導体層
44 半導体層
4142 半導体層
4243 半導体層
414243 半導体層
51 導電層
52 導電層
53 導電層
54 導電層
55 導電層
56 導電層
57 導電層
58 導電層
5154 導電層
61 酸化物層
61a 酸化物層
61b 酸化物層
62 絶縁層
71 導電層
81 開口
81a 開口
81b 開口
81c 開口
81d 開口
82 開口
83 開口
Tr1 トランジスタ
Tr2 トランジスタ
Tr3 トランジスタ
EL 表示素子
Claims (4)
- 第1の導電層を有し、
前記第1の導電層の上方に第1の絶縁層を有し、
前記第1の絶縁層の上方に酸化物半導体層を有し、
前記酸化物半導体層と電気的に接続された第2の導電層を有し、
前記酸化物半導体層と電気的に接続された第3の導電層を有し、
前記第1の絶縁層の上方に第4の導電層を有し、
前記酸化物半導体層の上方と前記第2の導電層の上方と前記第3の導電層の上方と前記第4の導電層の上方とに第2の絶縁層を有し、
前記第2の絶縁層の上方に第5の導電層を有し、
前記第1の絶縁層は、第1の開口を有し、
前記第2の絶縁層は、第2の開口を有し、
前記第2の絶縁層は、第3の開口を有し、
前記第5の導電層は、前記第1の開口及び前記第2の開口を介して、前記第1の導電層と電気的に接続され、
前記第5の導電層は、前記第3の開口を介して、前記第4の導電層と電気的に接続され、
前記第4の導電層は、トランジスタのソース電極又はドレイン電極の一方として機能することができる第1の領域を有し、
前記酸化物半導体層は、前記第1の導電層及び前記第5の導電層と重なる第2の領域を有することを特徴とする半導体装置。 - 第1の導電層を有し、
前記第1の導電層の上方に第1の絶縁層を有し、
前記第1の絶縁層の上方に酸化物半導体層を有し、
前記酸化物半導体層と電気的に接続された第2の導電層を有し、
前記酸化物半導体層と電気的に接続された第3の導電層を有し、
前記第1の絶縁層の上方に第4の導電層を有し、
前記第1の絶縁層の上方に第6の導電層を有し、
前記酸化物半導体層の上方と前記第2の導電層の上方と前記第3の導電層の上方と前記第4の導電層の上方とに第2の絶縁層を有し、
前記第2の絶縁層の上方に第5の導電層を有し、
前記第1の絶縁層は、第1の開口を有し、
前記第2の絶縁層は、第2の開口を有し、
前記第2の絶縁層は、第3の開口を有し、
前記第6の導電層は、前記第1の開口を介して、前記第1の導電層と電気的に接続され、
前記第5の導電層は、前記第2の開口を介して、前記第6の導電層と電気的に接続され、
前記第5の導電層は、前記第3の開口を介して、前記第4の導電層と電気的に接続され、
前記第4の導電層は、トランジスタのソース電極又はドレイン電極の一方として機能することができる第1の領域を有し、
前記酸化物半導体層は、前記第1の導電層及び前記第5の導電層と重なる第2の領域を有することを特徴とする半導体装置。 - 請求項2において、
前記第2の開口は、前記第1の開口と重ならないことを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記酸化物半導体層及び前記第2の絶縁層の間に酸化物層を有し、
前記第1の導電層は、前記酸化物層と重ならない第3の領域を有し、
前記第5の導電層は、前記第3の領域と重なる第4の領域を有することを特徴とする半導体装置。
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JP6488124B2 (ja) | 2013-12-27 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9780226B2 (en) | 2014-04-25 | 2017-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
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