JP2015026725A - Semiconductor element housing package and mounting structure body equipped with the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor element housing package which enables degradation in airtightness by reducing occurrence of a crack on a ceramic frame body.SOLUTION: A semiconductor element housing package 3 includes a substrate 31 containing an element mounting region 31b where a semiconductor element 2 is mounted on a main surface 31a, a ceramic frame body 32 that is disposed on the main surface 31a of the substrate 31 so as to surround the element mounting region 31b, and a plate-like lead terminal 33 which is disposed on the ceramic frame body 32 so as to extend on the outside of an outer peripheral end of the ceramic frame body 32 through a first junction member B1, containing a first side 33a and a second side 33b that crosses the first side 33a, positioned inside the outer peripheral end of the ceramic frame body 32. At the lead terminal 33, there are provided a plurality of cuts 331 arrayed along the first side 33a and extending along the second side 33b.

Description

  The present invention relates to a semiconductor element housing package for housing a semiconductor element and a mounting structure including the same.

  A package for housing a semiconductor element for housing a semiconductor element includes a substrate having an element mounting region for mounting a semiconductor element on a main surface, a ceramic frame disposed on the main surface of the substrate, and a bonding member. And a plate-like lead terminal arranged on the ceramic frame (see, for example, Patent Document 1).

JP 2003-115565 A

  For example, when the semiconductor element housed in the semiconductor element housing package is a high-power power semiconductor element, a large current flows through the lead terminal, and a high voltage is applied to the semiconductor element. Therefore, a large amount of heat is generated from the semiconductor element, and this heat is transmitted to the lead terminal, and the lead terminal and the ceramic frame body may be thermally expanded and contracted due to a temperature change caused by the heat.

  Here, since the thermal expansion coefficient of the lead terminal and the thermal expansion coefficient of the ceramic frame are different, stress may be applied to the ceramic frame bonded to the lead terminal. When the stress is applied to the ceramic frame, a crack is generated in the ceramic frame, and there is a problem that the airtightness of the package for housing a semiconductor element may be lowered.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a package for housing a semiconductor element that can reduce the occurrence of cracks in a ceramic frame and suppress a decrease in hermeticity. It is in.

  A package for housing a semiconductor element according to the present invention includes a substrate having an element mounting region for mounting a semiconductor element on a main surface, and a ceramic disposed on the main surface of the substrate so as to surround the element mounting region. A first frame body and a first frame disposed on the ceramic frame body via a first bonding member so as to extend to the outside of the outer peripheral edge of the ceramic frame body, and positioned on the inner side of the outer peripheral edge of the ceramic frame body. A plate-like lead terminal having a side and a second side intersecting the first side, wherein the lead terminal is arranged along the first side and extends along the second side The notch part of this is provided, It is characterized by the above-mentioned.

  A mounting structure according to the present invention includes the above-described package for housing a semiconductor element, and a semiconductor element mounted on the element mounting region of a substrate and connected to the lead terminal.

  According to the package for housing a semiconductor element according to the present invention, it is possible to reduce the occurrence of cracks in the ceramic frame and to suppress a decrease in hermeticity.

  According to the mounting structure according to the present invention, since the semiconductor element storage package is provided, the mounting structure has high reliability.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exploded perspective view of a package for housing a semiconductor element according to an embodiment of the present invention and a mounting structure including the same, with a lid removed. It is the top view which showed the package for semiconductor element accommodation of FIG. It is sectional drawing along the II line | wire of FIG. FIG. 3 is a plan view showing the relationship among a lid, lead terminals, and a second bonding member in the semiconductor element storage package of FIG. 1. It is the disassembled perspective view which showed the package for semiconductor element accommodation and mounting structure which concern on other embodiment of this invention. It is the top view which showed the package for semiconductor element accommodation of FIG. It is sectional drawing along the II-II line of FIG.

[Semiconductor element storage package and mounting structure]
A semiconductor element housing package and a mounting structure including the same according to an embodiment of the present invention will be described with reference to FIGS. The mounting structure 1 includes a semiconductor element 2 and a semiconductor element storage package 3.

  The semiconductor element 2 is disposed on the main surface 31 a of the substrate 31. The semiconductor element 2 is located in the opening of the ceramic frame 32 and is surrounded by the ceramic frame 32. That is, as shown in FIG. 1, the semiconductor element 2 is accommodated in a semiconductor element accommodation package 3.

  Note that a high-output power semiconductor device is adopted as the semiconductor device 2 of the present embodiment. The semiconductor element 2 of the present embodiment has a function of performing processing such as power control or supply. The power semiconductor element 2 can be formed of a semiconductor material such as gallium nitride or silicon carbide.

  The semiconductor element storage package 3 has a function of protecting the semiconductor element 2. As shown in FIG. 1, the semiconductor element housing package 3 houses the semiconductor element 2. As shown in FIG. 2, the semiconductor element storage package 3 includes a substrate 31, a ceramic frame body 32, lead terminals 33, and a lid body 34. In FIG. 2, the lid 34 is indicated by a broken line.

  The substrate 31 has a function of supporting the semiconductor element 2. The substrate 31 has a main surface 31a. The main surface 31a of the substrate 31 has an element mounting region 31b. As shown in FIG. 1, the semiconductor element 2 is disposed on the main surface 31 a of the substrate 31. The substrate 31 is composed of a single metal plate or a laminate in which a plurality of metal plates are laminated. Examples of the material for the metal plate include metals such as copper, iron, tungsten, molybdenum, nickel, and cobalt, or alloys containing these metal materials. If a metal material is used as the material of the substrate 31, heat generated from the semiconductor element 2 through the substrate 31 can be released to the outside, so that the heat dissipation of the semiconductor element housing package 3 is improved.

  The ceramic frame 32 is disposed on the main surface 31 a of the substrate 31. The ceramic frame 32 is bonded to the main surface 31a of the substrate 31 via a bonding member (not shown) such as silicone resin or polyimide resin. Alternatively, a metal layer may be formed on the lower surface of the ceramic frame 32, and the metal layer of the ceramic frame 32 and the main surface 31a of the substrate 31 may be bonded via a bonding member such as solder or silver solder.

  As shown in FIGS. 1 and 2, the ceramic frame 32 is arranged so as to surround the semiconductor element 2 (element mounting region 31b). That is, the semiconductor element 2 (element mounting region 31b) is located inside the ceramic frame 32. The ceramic frame 32 has an upper surface 32a.

  A metallized layer 32b is formed on a part of the upper surface 32a of the ceramic frame 32. As shown in FIG. 3, a lead terminal 33 is disposed on the metallized layer 32b via a first joining member B1.

  The ceramic frame 32 is made of a ceramic material. Examples of the ceramic material include ceramic materials such as aluminum oxide, aluminum nitride, silicon nitride, alumina, and mullite, glass ceramic materials, or composite materials obtained by mixing a plurality of these materials.

  The lead terminal 33 has a function of transmitting an electrical signal between the semiconductor element 2 and an external circuit board (not shown). The lead terminal 33 is disposed on the metallized layer 32b of the ceramic frame 32 via the first bonding member B1. Examples of the first bonding member B1 include a solder material such as solder or silver solder.

  Part of the lead terminal 33 extends outward from the outer peripheral end of the ceramic frame 32. Further, as shown in FIGS. 1, 2 and 4, the lead terminal 33 is plate-shaped. Further, the lead terminal 33 has a first side 33a located inside the outer peripheral end of the ceramic frame 32 and a second side 33b intersecting the first side 33a. The lead terminal 33 has a rectangular shape in plan view, but is not limited thereto. In the present embodiment, two lead terminals 33 are arranged, but the number of lead terminals 33 is not limited to this.

The lead terminal 33 has a plurality of notches 331. The plurality of notches 331 are arranged along the first side 33 a of the lead terminal 33. In addition, the plurality of notch portions 331 are formed on the second side of the lead terminal 33.
It extends along the side 33b. Further, the cutout portion 331 of the present embodiment is a recess that is recessed toward the ceramic frame 32 and does not penetrate the lead terminal 33.

As shown in FIGS. 2 and 4, the notch 331 has a first part 331 a that overlaps the lid 34 and a second part 331 b that is located outside the lid 34. That is, the notch 331 of the present embodiment is located inside and outside the outer peripheral end of the ceramic frame 32. The first part 331a is a part located in the lid 34, and the second part 331b is a part extending outside the lid 34.

  The lead terminal 33 is made of, for example, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.

  The lid 34 has a function of protecting the semiconductor element 2. As shown in FIGS. 3 and 4, the lid 34 is disposed on the upper surface 32 a and the metallized layer 32 b of the ceramic frame 32 and the lead terminal 33 so as to cover the semiconductor element 2. That is, the second bonding member B <b> 2 is disposed between the lid 34 and the upper surface 32 a of the ceramic frame 32, and between the lid 34 and the lead terminal 33.

  The second joining member B2 of this embodiment is disposed on substantially the entire upper surface 32a of the ceramic frame 32 including the metallized layer 32b. Moreover, in FIG. 4, the formation area of 2nd joining member B2 is shown with the oblique line (broken line).

Further, as shown in FIGS. 3 and 4, the second joining member B <b> 2 is formed by the notch 33 of the lead terminal 33.
Located in 1. Specifically, the second joining member B2 is located in the first portion 331a of the notch 331. A part of the second joining member B2 may be located in the second portion 331b of the notch 331.

  The lid 34, the ceramic frame 32, the lid 34, and the lead terminal 33 are joined by the second joining member B2, whereby the airtightness of the semiconductor element housing package 3 can be improved. That is, the second bonding member B 2 also serves as a sealing member that seals between the lid 34 and the ceramic frame 32 and between the lid 34 and the lead terminal 33. The second bonding member B2 is formed of a resin material such as an epoxy resin or a polyamide resin.

  As shown in FIGS. 1 and 2, the lid 34 has a rectangular shape in plan view, but is not limited thereto. The lid 34 is made of, for example, an insulating material such as ceramics or resin, a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials.

In the semiconductor element storage package 3, the plate-like lead terminal 33 is provided with a plurality of cutout portions 331 arranged along the first side 33 a and extending along the second side 33 b. For example, even when a high voltage is applied to the semiconductor element and a large amount of heat generated in the semiconductor element is transferred to the lead terminal, and the lead terminal and the ceramic frame are thermally expanded and contracted due to a temperature change caused by this heat, the lead terminal 33 Since the plurality of cutout portions 331 are formed in this manner, the stress applied to the ceramic frame 32 due to the thermal expansion and contraction of the lead terminal 33 can be reduced. In addition, since the plurality of notches 331 are formed, the lead terminal 33 is easily deformed.
Since the stress caused by the thermal expansion and contraction of the lead terminal 33 can be relaxed by the deformation of the lead terminal 33, the stress applied to the ceramic frame 32 by the thermal expansion and contraction of the lead terminal 33 can be reduced. Therefore, it is possible to reduce the occurrence of cracks in the ceramic frame 32 and to suppress the deterioration of the airtightness of the semiconductor element storage package 3.

Further, in the semiconductor element storage package 3, the notch 331 has a first part 331a that overlaps the lid 34, and the second bonding member B2 is disposed in the first part 331a. As a result, the bonding area of the lead terminal 33 and the lid 34 by the second bonding member B2 can be increased, and the lead terminal 33 and the lid 34 can be joined more firmly. In addition, since the second bonding member B2 is disposed in the first portion 331a that overlaps the lid 34 in the notch 331, the semiconductor element storage package 3 by overlapping the lid 34 on the notch 331 is provided. A decrease in airtightness can be suppressed.

In the semiconductor element storage package 3, the notch 331 has a second portion 331 b extending from the first portion 331 a to the outside of the lid body 34. As a result, even if the lead terminal 33 is thermally expanded and contracted, the lead terminal 33 is easily deformed by forming the second portion 331b. Therefore, the stress caused by the thermal expansion and contraction of the lead terminal 33 is reduced. Can be relaxed by 33 deformations. The thermal expansion and thermal contraction of the lead terminal 33
By relieving the deformation of the portion 331b, the stress applied to the ceramic frame 32 due to thermal expansion and contraction of the lead terminal 33 can be reduced. Therefore, it is possible to reduce the occurrence of cracks in the ceramic frame 32 and to suppress the deterioration of the airtightness of the semiconductor element housing package 3.

Even if the second portion 331b located outside the lid 32 is formed in the notch 331, the second bonding member B2 as a sealing member is disposed in the first portion 331a overlapping the lid 32. Second because
It is possible to suppress a decrease in hermeticity of the semiconductor element housing package 3 due to the formation of the portion 331b.

Further, the second joining member B2 may be disposed in the second portion 331b of the notch 331. As a result, the bonding area of the lid 32 and the lead terminal 33 by the second bonding member B2 increases, so that the lead terminal 33 and the lid 34 can be bonded more firmly. In addition, since the second bonding member B2 is disposed in the second portion 331b of the notch portion 331, the airtightness of the package 3 for housing a semiconductor element by forming the second portion 331b in the notch portion 331 is improved. Reduction can be suppressed.

Furthermore, by arranging the second bonding member B2 in the second portion 331b of the notch 331, the strength of the second bonding member B2 arranged in the notch 331 is improved, and the thermal expansion and heat of the lead terminal 33 are improved. It is possible to suppress the occurrence of cracks or cracks in the second bonding member B2 due to the stress due to the shrinkage, and it is possible to suppress a decrease in airtightness of the semiconductor element housing package 3.

Further, in the semiconductor element housing package 3, the bonding wire that connects the semiconductor element 2 and the lead terminal 33 is connected to a portion where the notch 331 of the lead terminal 33 is not formed. Since the notch 331 of the lead terminal 33 is a part where the resistance is likely to increase, by connecting the bonding wire to a part where the notch 331 having a small resistance is not formed,
The electrical characteristics of the semiconductor element storage package 3 are improved.

  In the mounting structure 1, the semiconductor element 2 is mounted on the element mounting region 31 b of the substrate 31 of the element storage package 3. That is, the semiconductor element 2 is accommodated inside the element accommodation package 3. The mounting structure 1 has high reliability because the semiconductor element storage package 3 can suppress a decrease in hermeticity, and thus includes the semiconductor element storage package.

  The present invention is not limited to the above-described embodiment, and various changes and improvements can be made without departing from the scope of the present invention.

Further, the notch 331 in the above embodiment is a recess that does not penetrate the lead terminal 33, but is not limited thereto. As shown in FIGS. 5 to 7, the notch 331 may be penetrated. That is, the first part 331 a and the second part 331 b of the notch 331 pass through the lead terminal 33.

Thereby, even if the lead terminal 33 is thermally expanded and contracted, the notch 331 penetrates the lead terminal 33, so that the stress applied to the ceramic frame 32 by the thermal expansion and contraction of the lead terminal 33 is reduced. can do. Further, since the lead terminal 33 is easily deformed, the stress caused by the thermal expansion and contraction of the lead terminal 33 can be relieved by the deformation of the lead terminal 33. The stress applied to the frame body 32 can be reduced. Therefore, it is possible to reduce the occurrence of cracks in the ceramic frame 32 and to suppress the deterioration of the airtightness of the semiconductor element storage package 3.

As shown in FIGS. 6 and 7, the second joining member B <b> 2 is disposed in the first portion 331 a through which the notch 331 passes. As a result, the second bonding member B2 comes into contact with the first bonding member B1, the lead terminal 33, and the lid 34, so that the bonding area of the lead terminal 33 and the lid 34 by the second bonding member B2 can be increased. In addition, the lead terminal 33 and the lid body 34 can be joined more firmly. In addition, since the second bonding member B2 is disposed in the first portion 331a that overlaps the lid 34 in the notch 331, the airtightness of the semiconductor element housing package 3 by overlapping the lid 34 on the notch 331 is achieved. The decline in sex can be suppressed.

In addition, since the notch 331 has the penetrating second portion 331b, even if the lead terminal 33 is thermally expanded and contracted, the stress caused by the expansion and the thermal contraction is caused by the deformation of the lead terminal 33. Can be relaxed. By relieving the thermal expansion and thermal contraction of the lead terminal 33 by deformation of the second portion 331b of the notch 331, the stress applied to the ceramic frame 32 by the thermal expansion and thermal contraction of the lead terminal 33 can be reduced. Therefore, it is possible to reduce the occurrence of cracks in the ceramic frame 32 and to suppress the deterioration of the airtightness of the semiconductor element housing package 3.

Even if the second portion 331b located outside the lid 32 is formed in the notch 331, the second bonding member B2 as a sealing member is disposed in the first portion 331a overlapping the lid 32. Second because
It is possible to suppress a decrease in hermeticity of the semiconductor element housing package 3 due to the formation of the portion 331b.

Further, the second joining member B2 may be disposed in the second portion 331b of the notch 331. As a result, the bonding area of the lid 32 and the lead terminal 33 by the second bonding member B2 increases, so that the lead terminal 33 and the lid 34 can be bonded more firmly. In addition, since the second joining member B2 is disposed in the second portion 331b of the notch 331, the second notch 331 is second.
It is possible to suppress a decrease in the airtightness of the semiconductor element housing package 3 due to the formation of the portion 331b. Furthermore, the strength of the second bonding member B2 disposed in the notch 331 is improved, and cracks and cracks generated in the second bonding member B2 due to the stress caused by the thermal expansion and contraction of the lead terminal 33 are suppressed. Therefore, it is possible to suppress a decrease in airtightness of the semiconductor element housing package 3.

Further, the first joining member B1 may be disposed in the first part 331a or the second part 331b of the notch 331. This increases the bonding area between the metallized layer 32b and the lead terminal 33 by the first bonding member B1, so that the lead terminal 33 and the frame body 32 can be bonded more firmly.

[Method for Manufacturing Package for Semiconductor Element Storage and Mounting Structure]
Hereinafter, a method for manufacturing the semiconductor element housing package 3 and the mounting structure 1 shown in FIG. 1 will be described. In addition, this invention is not limited to the following embodiment.

  First, the substrate 31, the lead terminal 33, and the lid 34 are prepared. The substrate 31, the lead terminal 33, and the lid body 34 are manufactured in a predetermined shape by using a metal processing method on an ingot obtained by casting a molten metal material into a mold and solidifying it. Then, by removing from the mold, the substrate 31, the lead terminal 33, and the lid 34 can be produced. As a result, the lead terminal 33 is formed with a notch 331 having a predetermined shape and size.

  Next, the ceramic frame 32 is prepared. First, for example, a mixture obtained by adding an organic binder, a plasticizer, a solvent, or the like to ceramic powder such as aluminum oxide, boron nitride, aluminum nitride, silicon nitride, silicon carbide, or beryllium oxide is processed into a predetermined shape. Next, a refractory metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer or a solvent is added to and mixed with the powder to prepare a metal paste. Then, a metal paste is printed in a predetermined pattern on the surface of the mixture processed into a predetermined shape. Then, by firing this, a ceramic frame 32 having a metal paste as the metallized layer 32b can be produced.

  Next, the ceramic frame 32 is bonded to the main surface of the substrate 31 via a bonding member. Then, the lead terminal 33 is joined to the metallized layer 32b of the ceramic frame 32 via a first joining member B1 made of, for example, silver solder.

  Next, the semiconductor element 2 is disposed in the element mounting region 31 b of the substrate 31. Then, the semiconductor element 2 and the lead terminal 33 are electrically connected via a bonding wire.

  Next, the lid 34 is placed on the ceramic frame 32 and the lead terminal 33 so as to cover the semiconductor element 2 by applying a second bonding member B2 made of, for example, epoxy resin onto the ceramic frame 32 and the lead terminal 33. By disposing it above, the mounting structure 1 can be manufactured.

DESCRIPTION OF SYMBOLS 1 Mounting structure 2 Semiconductor element 3 Package for semiconductor element accommodation
31 Board
31a Main surface
31b Device mounting area
32 Ceramic frame
32a top view
32b Metallized layer
33 Lead terminal
33a 1st side
33b 2nd side
331 Notch
331a First part
331b Second part
34 Lid B1 1st joining member B2 2nd joining member

Claims (5)

A substrate having an element mounting area for mounting a semiconductor element on the main surface, a ceramic frame disposed on the main surface of the substrate so as to surround the element mounting area, and an outer peripheral edge of the ceramic frame A first side located on the inside of the outer peripheral end of the ceramic frame and a second crossing the first side, the first side being disposed on the ceramic frame via a first joining member so as to extend to the outside of the ceramic frame. A plate-like lead terminal having a side,
A package for housing a semiconductor element, wherein the lead terminal is provided with a plurality of notches arranged along the first side and extending along the second side. A lid disposed on the ceramic frame and the lead terminal so as to cover the element mounting region, and a second joint disposed between the frame and the lid, and the lead terminal and the lid. And further comprising a member,
The notch has a first portion overlapping the lid,
2. The package for housing a semiconductor element according to claim 1, wherein the second bonding member is located in the first portion of the notch.   The package for housing a semiconductor element according to claim 2, wherein the notch has a second part extending from the first part to the outside of the lid.   The package for housing a semiconductor device according to claim 1, wherein the notch penetrates the lead terminal. A package for housing a semiconductor element according to any one of claims 1 to 4,
A mounting structure comprising: a semiconductor element mounted on the element mounting region of the substrate and connected to the lead terminal.

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