JP2015026675A - 固体撮像素子およびその製造方法、並びに電子機器 - Google Patents

固体撮像素子およびその製造方法、並びに電子機器 Download PDF

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JP2015026675A
JP2015026675A JP2013154458A JP2013154458A JP2015026675A JP 2015026675 A JP2015026675 A JP 2015026675A JP 2013154458 A JP2013154458 A JP 2013154458A JP 2013154458 A JP2013154458 A JP 2013154458A JP 2015026675 A JP2015026675 A JP 2015026675A
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pixel
light
solid
phase difference
film
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JP2013154458A
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Japanese (ja)
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JP2015026675A5 (enExample
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征志 中田
Seishi Nakada
征志 中田
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013154458A priority Critical patent/JP2015026675A/ja
Priority to TW103124169A priority patent/TWI657571B/zh
Priority to KR1020227016635A priority patent/KR102523203B1/ko
Priority to PCT/JP2014/003786 priority patent/WO2015011900A1/en
Priority to CN201480040757.1A priority patent/CN105393356A/zh
Priority to KR1020237012392A priority patent/KR20230053000A/ko
Priority to US14/905,735 priority patent/US9842874B2/en
Priority to KR1020217015375A priority patent/KR102402720B1/ko
Priority to KR1020157036101A priority patent/KR102257454B1/ko
Priority to CN202010255523.6A priority patent/CN111508984B/zh
Priority to CN202010235144.0A priority patent/CN111508983B/zh
Publication of JP2015026675A publication Critical patent/JP2015026675A/ja
Publication of JP2015026675A5 publication Critical patent/JP2015026675A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2013154458A 2013-07-25 2013-07-25 固体撮像素子およびその製造方法、並びに電子機器 Pending JP2015026675A (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2013154458A JP2015026675A (ja) 2013-07-25 2013-07-25 固体撮像素子およびその製造方法、並びに電子機器
TW103124169A TWI657571B (zh) 2013-07-25 2014-07-14 固態影像感測器，其製造方法及電子器件
KR1020227016635A KR102523203B1 (ko) 2013-07-25 2014-07-17 고체 화상 센서 및 그 제조 방법, 및 전자 장치
PCT/JP2014/003786 WO2015011900A1 (en) 2013-07-25 2014-07-17 Solid state image sensor, method of manufacturing the same, and electronic device
CN201480040757.1A CN105393356A (zh) 2013-07-25 2014-07-17 固体图像传感器、固体图像传感器制造方法和电子设备
KR1020237012392A KR20230053000A (ko) 2013-07-25 2014-07-17 고체 화상 센서 및 그 제조 방법, 및 전자 장치
US14/905,735 US9842874B2 (en) 2013-07-25 2014-07-17 Solid state image sensor, method of manufacturing the same, and electronic device
KR1020217015375A KR102402720B1 (ko) 2013-07-25 2014-07-17 고체 화상 센서 및 그 제조 방법, 및 전자 장치
KR1020157036101A KR102257454B1 (ko) 2013-07-25 2014-07-17 고체 화상 센서 및 그 제조 방법, 및 전자 장치
CN202010255523.6A CN111508984B (zh) 2013-07-25 2014-07-17 固体图像传感器、固体图像传感器制造方法和电子设备
CN202010235144.0A CN111508983B (zh) 2013-07-25 2014-07-17 固体图像传感器、固体图像传感器制造方法和电子设备

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JP2013154458A JP2015026675A (ja) 2013-07-25 2013-07-25 固体撮像素子およびその製造方法、並びに電子機器

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JP2015026675A true JP2015026675A (ja) 2015-02-05
JP2015026675A5 JP2015026675A5 (enExample) 2016-02-12

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US (1) US9842874B2 (enExample)
JP (1) JP2015026675A (enExample)
KR (4) KR102402720B1 (enExample)
CN (3) CN111508983B (enExample)
TW (1) TWI657571B (enExample)
WO (1) WO2015011900A1 (enExample)

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JP2017011207A (ja) * 2015-06-25 2017-01-12 三重富士通セミコンダクター株式会社 固体撮像装置および遮光方法
JP2017069506A (ja) * 2015-10-02 2017-04-06 エルジー ディスプレイ カンパニー リミテッド 薄膜光センサ、２次元アレイセンサ、および指紋センサ付きモバイル用ディスプレイ
WO2018061729A1 (ja) * 2016-09-30 2018-04-05 株式会社ニコン 撮像素子および焦点調節装置
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JP2020048089A (ja) * 2018-09-19 2020-03-26 株式会社ニコン 撮像素子および撮像装置
WO2020137259A1 (ja) * 2018-12-28 2020-07-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
WO2021005961A1 (ja) * 2019-07-11 2021-01-14 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2021015957A (ja) * 2019-07-11 2021-02-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2021170657A (ja) * 2016-03-29 2021-10-28 ソニーグループ株式会社 固体撮像装置、及び電子機器
JP2022101452A (ja) * 2020-12-24 2022-07-06 Tdk株式会社 光センサー、光センサーユニット、光センサー装置及び情報端末装置
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