JP2015012195A - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP2015012195A JP2015012195A JP2013137500A JP2013137500A JP2015012195A JP 2015012195 A JP2015012195 A JP 2015012195A JP 2013137500 A JP2013137500 A JP 2013137500A JP 2013137500 A JP2013137500 A JP 2013137500A JP 2015012195 A JP2015012195 A JP 2015012195A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
図1は、本発明の実施形態1に係る発光装置の概略構成を示す模式図である。
パッケージ10には、例えば、PPA(ポリフタルアミド)、PPS(ポリフェニレンサルファイド)、液晶ポリマー、またはナイロンなどの熱可塑性樹脂や、エポキシ樹脂、シリコーン樹脂、変性エポキシ樹脂、変性シリコーン樹脂、ウレタン樹脂、またはアクリレート樹脂などの熱硬化性樹脂を用いることができるほか、ガラスエポキシ樹脂、セラミックス、ガラスなどを用いることができる。なお、セラミックスとしては、特に、アルミナ、窒化アルミニウム、ムライト、炭化ケイ素あるいは窒化ケイ素などを用いることが好ましい。特に、高反射で安価なアルミナとムライトが好ましい。
発光素子20には、例えば、発光ダイオードを用いることができる。発光ダイオードには、例えば、絶縁性且つ透光性の成長用基板(例:サファイア基板)と、この成長用基板上に形成された活性層を含む積層構造と、を備えたものを用いることができる。なお、活性層を含む積層構造は、種々の半導体(例:InN、AlN、GaN、InGaN、AlGaN、InGaAlNなどの窒化物半導体、III−V族化合物半導体、II−VI族化合物半導体)によって形成することができる。
透光性部材30には、発光素子20からの光を透過する性質を有する部材を用いる。透過の程度は特に限定されないが、透光性部材30には、例えば、発光素子20から出射される光を100%透過させる部材のほか、70%程度以上、80%程度以上、90%程度以上、または95%程度以上透過させる性質を有する部材を用いることが好ましい。
封止樹脂40には、例えば、上述した透光性部材30と同様の材料を用いることができる。
蛍光体50は、発光素子20の上方よりも発光素子20の側方に多く分布している。これにより、発光素子20の上方に分布する蛍光体50の量が発光素子20の側方に分布する蛍光体50の量よりも少なくなるため(あるいは0になるため)、発光素子20の上面から出射する光が蛍光体50に反射される頻度が低下し、発光素子20の上面から出射する光をパッケージ10の凹部開口X1から取り出し易くなる。また、発光素子20の側方に分布する蛍光体50の量が発光素子20の上方に分布する蛍光体50の量よりも多くなるため、発光素子20の側面から出射した光を蛍光体50の励起に効率的に用いることが可能となる。なお、発光素子20の側面から出射した光が蛍光体50の励起に効率的に用いられる場合は、発光素子20の側面から出射した光がパッケージ10の凹部側壁X2に達し難くなるため、発光素子20の側面から出射した光がパッケージ10の凹部側壁X2を通り抜けてパッケージ10の外に出てしまうことを抑制することが可能となる。
図2は、本発明の実施形態2に係る発光装置の概略構成を示す模式図である。
図3は、本発明の実施形態3に係る発光装置の概略構成を示す模式図である。
20 発光素子
21 発光素子
22 発光素子
30 透光性部材
31 透光性部材
32 透光性部材
40 封止樹脂
50 蛍光体
60 ワイヤ
X 凹部
X1 凹部開口
X2 凹部側壁
X3 凹部底面
Claims (8)
- 凹部を有するパッケージと、前記パッケージの凹部内に実装された発光素子と、前記発光素子の上方に設けられた透光性部材と、前記パッケージの凹部を封止する封止樹脂と、前記封止樹脂に含まれた蛍光体と、を備えた発光装置であって、
前記蛍光体が前記発光素子の上方よりも前記発光素子の側方に多く分布するとともに、前記発光素子の側面が前記封止樹脂に対して露出しており、且つ、前記透光性部材の一部が前記封止樹脂から突き出ていることを特徴する発光装置。 - 前記透光性部材は、円の一部が切り取られた形状となる断面視を有し、前記断面視において、前記切り取られた側は前記発光素子側に向けられていることを特徴とする請求項1に記載の発光装置。
- 前記蛍光体は、前記パッケージの凹部底面に堆積していることを特徴とする請求項1または2のいずれか1項に記載の発光装置。
- 前記蛍光体は、前記発光素子の活性層よりも低く堆積していることを特徴とする請求項3に記載の発光装置。
- 前記蛍光体は、前記発光素子の活性層よりも高く堆積していることを特徴とする請求項3に記載の発光装置。
- 前記透光性部材は、前記蛍光体の堆積を妨げる表面を有していることを特徴とする請求項1から5のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記発光素子の上面に設けられていることを特徴とする請求項1から6のいずれか1項に記載の発光装置。
- 前記透光性部材は、前記発光素子の上面に貼り付けられていることを特徴とする請求項7に記載の発光装置。
Priority Applications (3)
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JP2013137500A JP6107475B2 (ja) | 2013-06-28 | 2013-06-28 | 発光装置 |
US14/318,320 US9484507B2 (en) | 2013-06-28 | 2014-06-27 | Light emitting device |
US15/273,298 US9608180B2 (en) | 2013-06-28 | 2016-09-22 | Light emitting device |
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JP2013137500A JP6107475B2 (ja) | 2013-06-28 | 2013-06-28 | 発光装置 |
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JP2015012195A true JP2015012195A (ja) | 2015-01-19 |
JP6107475B2 JP6107475B2 (ja) | 2017-04-05 |
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Cited By (4)
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JP2017034148A (ja) * | 2015-08-04 | 2017-02-09 | 日亜化学工業株式会社 | 発光装置および発光装置を備えたバックライト |
JP2019091844A (ja) * | 2017-11-16 | 2019-06-13 | スタンレー電気株式会社 | 半導体受光装置及びその製造方法 |
WO2020022080A1 (ja) * | 2018-07-27 | 2020-01-30 | 住友化学株式会社 | Ledデバイス、ledデバイスの製造方法および積層体 |
JP7481610B2 (ja) | 2019-12-26 | 2024-05-13 | 日亜化学工業株式会社 | 発光装置 |
Families Citing this family (6)
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JP6326830B2 (ja) * | 2013-02-28 | 2018-05-23 | 日亜化学工業株式会社 | 発光装置及びそれを備える照明装置 |
JP6291735B2 (ja) * | 2013-07-05 | 2018-03-14 | 日亜化学工業株式会社 | 発光装置 |
CN104701438B (zh) * | 2015-03-18 | 2017-11-03 | 青岛杰生电气有限公司 | 深紫外光源及其封装方法 |
CN109860378B (zh) * | 2018-12-25 | 2024-05-10 | 广东晶科电子股份有限公司 | 一种白光led器件及其制作方法 |
CN110459663A (zh) * | 2019-06-28 | 2019-11-15 | 广东晶科电子股份有限公司 | 一种led器件及其制作方法 |
JP7189451B2 (ja) * | 2020-06-30 | 2022-12-14 | 日亜化学工業株式会社 | 発光モジュール、液晶表示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005158949A (ja) * | 2003-11-25 | 2005-06-16 | Matsushita Electric Works Ltd | 発光装置 |
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US9608180B2 (en) | 2017-03-28 |
US20170012185A1 (en) | 2017-01-12 |
US9484507B2 (en) | 2016-11-01 |
US20150001565A1 (en) | 2015-01-01 |
JP6107475B2 (ja) | 2017-04-05 |
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