JP2015012161A - Electronic device - Google Patents

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Publication number
JP2015012161A
JP2015012161A JP2013136898A JP2013136898A JP2015012161A JP 2015012161 A JP2015012161 A JP 2015012161A JP 2013136898 A JP2013136898 A JP 2013136898A JP 2013136898 A JP2013136898 A JP 2013136898A JP 2015012161 A JP2015012161 A JP 2015012161A
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Prior art keywords
substrate
conductor layer
heat
mold resin
electronic component
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Japanese (ja)
Inventor
祐紀 眞田
Yuki Sanada
祐紀 眞田
慎也 内堀
Shinya Uchibori
慎也 内堀
圭史 岸本
Keiji Kishimoto
圭史 岸本
正英 辰己
Masahide Tatsumi
正英 辰己
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Denso Corp
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Denso Corp
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Priority to JP2013136898A priority Critical patent/JP2015012161A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a heat radiation structure capable of radiating heat without requiring a heat radiation element such as a Peltier element, while securing insulation between a heating member such as a heater element and the outside.SOLUTION: A conductor layer 14 is disposed at a lower side of an electronic component 20 that becomes a heater element, and the conductor layer 14 extends in a plane direction of a substrate 10. A heat radiation member 40 is disposed at a position opposing the conductor layer 14 with an insulation material portion of the substrate 10 interposed therebetween. In such a configuration, heat generated in the electronic component 20 is transferred to the conductor layer 14, conducted in the plane direction of the substrate 10 via the conductor layer 14, transferred to the heat radiation member 40 and discharged from a top face of the heat radiation member 40 exposed from a mold resin 50 to the outside. Thus, heat radiation is satisfactorily performed even without requiring a heat radiation element such as a Peltier element. Further, since the insulation material portion of the substrate 10 is present between the conductor layer 14 and the heat radiation member 40, the electronic component 20 can be surely insulated from the outside by the insulation material portion.

Description

本発明は、基板の一面側に発熱素子などの発熱部材が配置される電子装置に関しするものである。   The present invention relates to an electronic device in which a heat generating member such as a heat generating element is disposed on one side of a substrate.

従来、特許文献1において、基板の一面側に発熱素子を配置しつつ発熱素子をモールド樹脂で封止したモールドパッケージにおける放熱構造が開示されている。この放熱構造は、発熱素子の下方に配置されるインターポーザの表層部に放熱素子となるペルチェ素子等を配置すると共に、発熱素子の側方に、放熱素子に対して接しつつモールド樹脂から露出させられる伝熱部を配置することで構成されている。このような構成では、発熱素子が発した熱は放熱素子を介して伝熱部に伝えられ、モールド樹脂の外部に放出させられる。   Conventionally, Patent Document 1 discloses a heat dissipation structure in a mold package in which a heat generating element is disposed on one side of a substrate and the heat generating element is sealed with a mold resin. In this heat dissipation structure, a Peltier element or the like serving as a heat dissipation element is disposed on the surface layer portion of the interposer disposed below the heat generation element, and is exposed from the mold resin to the side of the heat generation element while being in contact with the heat dissipation element. It is comprised by arrange | positioning a heat-transfer part. In such a configuration, the heat generated by the heat generating element is transmitted to the heat transfer section via the heat radiating element, and is released to the outside of the mold resin.

特開2008−153393号公報JP 2008-153393 A

しかしながら、特許文献1に記載の放熱構造では、ペルチェ素子等の放熱素子が必要になるし、発熱素子が放熱素子を介して伝熱部に直接接続された構造であり、かつ、伝熱部がモールド樹脂から露出した構造であるため、発熱素子と外部との絶縁を確保できない。   However, the heat dissipating structure described in Patent Document 1 requires a heat dissipating element such as a Peltier element, the heat generating element is directly connected to the heat transfer part via the heat dissipating element, and the heat transfer part is Since the structure is exposed from the mold resin, insulation between the heating element and the outside cannot be ensured.

本発明は上記点に鑑みて、ペルチェ素子等の放熱素子を必要とせず、かつ、発熱素子等の発熱部材と外部との絶縁を確保しつつ放熱を行うことが可能な放熱構造を有する電子装置を提供することを目的とする。   In view of the above, the present invention does not require a heat-dissipating element such as a Peltier element, and has an heat-dissipating structure that can dissipate heat while ensuring insulation between a heat-generating member such as a heat-generating element and the outside. The purpose is to provide.

上記目的を達成するため、請求項1に記載の発明では、第1導体層(13)が形成された基板(10)の一面(11)側に発熱部材(20)を配置し、発熱部材をモールド樹脂(50)にて封止した電子部品において、基板の一面のうち発熱部材が配置された位置において、該基板の一面から該基板の内部に形成されたビア(15)と、基板の内部に形成されると共にビアに接続され、発熱部材と対向する位置から該基板の平面方向に延設された第2導体層(14)と、基板の一面側に設けられ、基板のベースとなる絶縁材料を挟んで第2導体層のうち発熱部材と対向する位置から基板の水平方向に延設された部分と対向して配置されると共に、モールド樹脂の上面(50b)に向けて延設され、モールド樹脂よりも高熱伝導率の材料で構成された放熱部材(40)と、を備えていることを特徴としている。   In order to achieve the above object, in the invention described in claim 1, the heat generating member (20) is disposed on the one surface (11) side of the substrate (10) on which the first conductor layer (13) is formed, and the heat generating member is disposed. In the electronic component sealed with the mold resin (50), a via (15) formed from one surface of the substrate to the inside of the substrate at a position where the heat generating member is disposed on one surface of the substrate, and the interior of the substrate And a second conductor layer (14) extending in a plane direction of the substrate from a position facing the heat generating member and connected to the via, and an insulation provided on one side of the substrate and serving as a base of the substrate The second conductor layer is disposed so as to face the portion extending in the horizontal direction of the substrate from the position facing the heating member in the second conductor layer, and is extended toward the upper surface (50b) of the mold resin. Consists of materials with higher thermal conductivity than mold resin It is characterized in that comprises a, and the heat radiating member (40) which.

このような構成によれば、発熱部材、例えば発熱素子となる電子部品(20)の下方に配置された第2導体層に対して、発熱部材で発した熱が伝えられる。このため、第2導体層を通じて基板の平面方向に伝熱され、これが放熱部材に伝わり、放熱部材を通じてモールド樹脂の上面側から外部に放出される。このとき、放熱部材と第2導体層との間に基板の絶縁材料部分が存在することから、この絶縁材料部分によって伝熱が阻害され得るが、基板の厚み自体が薄く、放熱部材と第2導体層との間に介在する絶縁材料部分の厚みも当然薄い。このため、放熱部材と第2導体層との間に基板の絶縁材料部分が存在していても、あまり伝熱が阻害されることなく、第2導体層から放熱部材への伝熱が行われるようにできる。特に、放熱部材と導体層との間に介在する絶縁材料部分を高熱伝導率としておけば、より第2導体層から放熱部材への伝熱が良好に行われるようにできる。   According to such a configuration, heat generated by the heat generating member is transmitted to the second conductor layer disposed below the heat generating member, for example, the electronic component (20) serving as the heat generating element. For this reason, heat is transferred in the plane direction of the substrate through the second conductor layer, this is transferred to the heat radiating member, and is released to the outside from the upper surface side of the mold resin through the heat radiating member. At this time, since there is an insulating material portion of the substrate between the heat radiating member and the second conductor layer, heat transfer may be hindered by this insulating material portion, but the thickness of the substrate itself is small, and the heat radiating member and the second conductor layer Of course, the thickness of the insulating material portion interposed between the conductor layers is also thin. For this reason, even if there is an insulating material portion of the substrate between the heat radiating member and the second conductor layer, heat transfer from the second conductor layer to the heat radiating member is performed without much inhibition of heat transfer. You can In particular, if the insulating material portion interposed between the heat dissipation member and the conductor layer is set to have a high thermal conductivity, heat transfer from the second conductor layer to the heat dissipation member can be performed more favorably.

そして、放熱部材と第2導体層との間に絶縁材料部分を介在させているため、発熱部材や第2導体層と放熱部材との間の絶縁を確保することも可能となる。したがって、ペルチェ素子等の放熱素子を必要とせず、かつ、発熱部材と外部との絶縁を確保しつつ放熱を行うことが可能な放熱構造を有する電子装置にできる。   Since the insulating material portion is interposed between the heat dissipation member and the second conductor layer, it is possible to ensure insulation between the heat generating member or the second conductor layer and the heat dissipation member. Therefore, it is possible to provide an electronic device having a heat dissipation structure that does not require a heat dissipation element such as a Peltier element and that can perform heat dissipation while ensuring insulation between the heat generating member and the outside.

なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係の一例を示すものである。   In addition, the code | symbol in the bracket | parenthesis of each said means shows an example of a corresponding relationship with the specific means as described in embodiment mentioned later.

本発明の第1実施形態にかかる電子装置に備えられるモールドパッケージの断面図である。It is sectional drawing of the mold package with which the electronic device concerning 1st Embodiment of this invention is equipped. 本発明の第2実施形態にかかる電子装置に備えられるモールドパッケージの断面図である。It is sectional drawing of the mold package with which the electronic device concerning 2nd Embodiment of this invention is equipped. 本発明の第3実施形態にかかる電子装置に備えられるモールドパッケージの断面図である。It is sectional drawing of the mold package with which the electronic apparatus concerning 3rd Embodiment of this invention is equipped. 本発明の第4実施形態にかかる電子装置に備えられるモールドパッケージの断面図である。It is sectional drawing of the mold package with which the electronic device concerning 4th Embodiment of this invention is equipped.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

(第1実施形態)
本発明の第1実施形態にかかる電子装置について説明する。ここでは、電子装置に備えられるモールドパッケージについて、図1および図2を参照して説明する。このモールドパッケージが備えられる電子装置は、たとえば自動車などの車両に搭載され、車両用の各種電子装置を駆動するための装置として適用される。
(First embodiment)
An electronic device according to a first embodiment of the present invention will be described. Here, a mold package provided in the electronic device will be described with reference to FIGS. An electronic device provided with this mold package is mounted on a vehicle such as an automobile, and is applied as a device for driving various electronic devices for vehicles.

図1に示すように、本実施形態の電子装置は、基板10、電子部品20、30、放熱部材40およびモールド樹脂50などを有し、基板10に実装した電子部品20、30および放熱部材40をモールド樹脂50にて樹脂封止した構成とされている。   As shown in FIG. 1, the electronic device of this embodiment includes a substrate 10, electronic components 20 and 30, a heat dissipation member 40, a mold resin 50, and the like, and the electronic components 20 and 30 and the heat dissipation member 40 mounted on the substrate 10. The resin is sealed with a mold resin 50.

基板10は、電子部品20、30や放熱部材40が実装されると共にモールド樹脂50にて覆われる一面11と、その反対面となる他面12とを有する板状部材をなすものであり、例えば上面形状が矩形状の板状部材とされている。   The substrate 10 forms a plate-like member having one surface 11 on which the electronic components 20 and 30 and the heat radiating member 40 are mounted and covered with the mold resin 50 and the other surface 12 which is the opposite surface. The upper surface shape is a rectangular plate-shaped member.

具体的には、基板10は、ベースとなる絶縁材料部分をエポキシ樹脂等の樹脂で構成したプリント基板などによる多層基板によって構成されている。基板10は、一面11側にランドや配線パターン等を構成する導体層13を備えていると共に、一面11と他面12の間、つまり基板10の内部に内層配線等を構成する導体層14を備えている。   Specifically, the substrate 10 is formed of a multilayer substrate such as a printed circuit board in which an insulating material portion serving as a base is made of a resin such as an epoxy resin. The substrate 10 includes a conductor layer 13 constituting a land, a wiring pattern and the like on one surface 11 side, and a conductor layer 14 constituting an inner layer wire and the like between the one surface 11 and the other surface 12, that is, inside the substrate 10. I have.

導体層13は、第1導体層に相当するもので、電子部品20、30および放熱部材40と接続するためのランドやランドに繋がる配線パターンなどを構成しており、例えばCu等の金属で構成されている。この導体層13と電気的および機械的に接合されることで、電子部品20、30は基板10に形成された配線パターンと電気的に接続されている。   The conductor layer 13 corresponds to the first conductor layer, and constitutes a land for connecting to the electronic components 20 and 30 and the heat dissipating member 40, a wiring pattern connected to the land, and the like, for example, composed of a metal such as Cu. Has been. The electronic components 20 and 30 are electrically connected to the wiring pattern formed on the substrate 10 by being electrically and mechanically joined to the conductor layer 13.

導体層14は、第2導体層に相当するもので、導体層13と電気的に接続される配線パターンを構成したり、放熱経路を構成するために用いられている。例えば、多層基板は、樹脂等で構成されるコア層を中心とした両面にビルドアップ層が積層されることで構成されるが、これらコア層とビルドアップ層との間に内層配線が配置され、この内層配線によって導体層14を構成することができる。   The conductor layer 14 corresponds to the second conductor layer, and is used to configure a wiring pattern that is electrically connected to the conductor layer 13 or to configure a heat dissipation path. For example, a multilayer board is constructed by laminating build-up layers on both sides centered on a core layer made of resin or the like, and inner layer wiring is arranged between these core layers and build-up layers. The conductor layer 14 can be constituted by this inner layer wiring.

本実施形態の場合、導体層14は、電子部品20の下方位置において、電子部品20と対向する位置から横方向(基板10の平面方向)に延ばされ、放熱部材40の下方まで延設されている。そして、電子部品20の下方に配置される導体層13と導体層14との間において、基板10にビア15が形成されることで、導体層13と導体層14とが熱的かつ電気的に接続されている。ビア15は、基板10の一面11側から基板10の内部に向けて形成された凹部15a内に導体材料15bを配置することで形成されている。凹部15aは、例えばレーザーによって形成されたレーザービアホールであり、一面10側から導体層14に達するように形成されている。   In the case of the present embodiment, the conductor layer 14 extends in a lateral direction (a planar direction of the substrate 10) from a position facing the electronic component 20 at a position below the electronic component 20, and extends below the heat radiating member 40. ing. A via 15 is formed in the substrate 10 between the conductor layer 13 and the conductor layer 14 disposed below the electronic component 20, so that the conductor layer 13 and the conductor layer 14 are thermally and electrically connected. It is connected. The via 15 is formed by disposing a conductive material 15 b in a recess 15 a formed from the one surface 11 side of the substrate 10 toward the inside of the substrate 10. The recess 15a is a laser via hole formed by a laser, for example, and is formed so as to reach the conductor layer 14 from the one surface 10 side.

電子部品20、30は、基板10に実装されることで配線パターンに電気的に接続されるものであり、表面実装部品やスルーホール実装部品など、どのようなものであってもよい。本実施形態の場合、電子部品20、30として、発熱素子20および受動素子30を例に挙げて説明する。発熱素子20は、本発明の発熱部材に相当するものであり、IGBT(Insulated Gate Bipolar Transistor)やMOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)等の特に発熱が大きいパワー素子等が想定されるが、マイコンや制御素子等であっても良い。この発熱素子20は、ボンディングワイヤ21およびはんだ等のダイボンド材22により、導体層13に接続されている。また、受動素子30としては、チップ抵抗、チップコンデンサ、水晶振動子等が挙げられる。この受動素子30は、はんだ等のダイボンド材31により導体層13に接続されている。これらの構成により、電子部品20、30は、基板10に形成された導体層13、つまり配線パターンに電気的に接続され、配線パターンに接続された図示しないスルーホール等を通じて外部と電気的に接続可能とされている。   The electronic components 20 and 30 are electrically connected to the wiring pattern by being mounted on the substrate 10, and may be any surface mounting component or through-hole mounting component. In the case of the present embodiment, the heating elements 20 and the passive elements 30 will be described as examples of the electronic components 20 and 30. The heat generating element 20 corresponds to a heat generating member of the present invention, and a power element that generates particularly large heat such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is assumed. However, a microcomputer or a control element may be used. The heating element 20 is connected to the conductor layer 13 by a bonding wire 21 and a die bonding material 22 such as solder. Examples of the passive element 30 include a chip resistor, a chip capacitor, and a crystal resonator. The passive element 30 is connected to the conductor layer 13 by a die bond material 31 such as solder. With these configurations, the electronic components 20 and 30 are electrically connected to the conductor layer 13 formed on the substrate 10, that is, the wiring pattern, and are electrically connected to the outside through a through hole (not shown) connected to the wiring pattern. It is possible.

放熱部材40は、電子部品20で発した熱を放熱するための放熱経路を構成する部材であり、例えばCu、Cu合金、Al等のようにモールド樹脂50よりも高放熱材料によって構成されている。放熱材料40は、基板10の一面11側において、基板10の絶縁材料部分を挟んで、導体層14のうち電子部品20の下方から基板10の平面方向に延設された部分に対向して配置されている。この放熱部材40は、電子部品20、30などと共にモールド樹脂50に封止されているが、本実施形態では、放熱部材40の上面がモールド樹脂50から露出させられている。放熱部材40も、はんだ等のダイボンド材41により、基板10の一面11に形成された導体層13に接続されている。導体層13のうち、放熱部材40が接続される部分は、導体層13の他の部分(例えば電子部品20、30と接続されている部分)とは電気的に分離された浮きランドとされている。上記したように、この放熱部材40の下方位置まで導体層14が延設されているが、放熱部材40と接続される導体層13と導体層14との間には基板10の絶縁材料部分が介在していて、これらの間の絶縁が確保されている。   The heat dissipating member 40 is a member constituting a heat dissipating path for dissipating heat generated by the electronic component 20, and is made of a heat dissipating material higher than the mold resin 50, such as Cu, Cu alloy, Al or the like. . The heat dissipating material 40 is disposed on one surface 11 side of the substrate 10 so as to face a portion of the conductor layer 14 that extends in the plane direction of the substrate 10 from below the electronic component 20 with the insulating material portion of the substrate 10 interposed therebetween. Has been. The heat radiating member 40 is sealed in the mold resin 50 together with the electronic components 20, 30 and the like. However, in this embodiment, the upper surface of the heat radiating member 40 is exposed from the mold resin 50. The heat radiating member 40 is also connected to the conductor layer 13 formed on the one surface 11 of the substrate 10 by a die bonding material 41 such as solder. A portion of the conductor layer 13 to which the heat dissipation member 40 is connected is a floating land that is electrically separated from other portions of the conductor layer 13 (for example, portions connected to the electronic components 20 and 30). Yes. As described above, the conductor layer 14 extends to a position below the heat radiating member 40, but the insulating material portion of the substrate 10 is between the conductor layer 13 and the conductor layer 14 connected to the heat radiating member 40. The insulation is ensured between them.

なお、基本的には基板10のベースとなる絶縁材料部分をエポキシ樹脂等の樹脂で構成しているが、より熱伝導率が高い絶縁材料で構成すること、もしくは、フィラー充填によって熱伝導率を高くすることもできる。特に、基板10のうち放熱部材40と導体層14との間に位置する部分においては高熱伝導率となるようにすることが好ましいため、この部分だけ部分的に高熱伝導率となるようにしても良い。   In addition, although the insulating material part used as the base of the board | substrate 10 is fundamentally comprised with resin, such as an epoxy resin, it is comprised with an insulating material with higher heat conductivity, or thermal conductivity is filled by filler filling. It can also be raised. In particular, since it is preferable that the portion of the substrate 10 located between the heat dissipation member 40 and the conductor layer 14 has high thermal conductivity, only this portion may have high thermal conductivity. good.

モールド樹脂50は、エポキシ樹脂等の熱硬化性樹脂等より構成されるもので、金型を用いたトランスファーモールド法やコンプレッションモールド法により形成されている。本実施形態の場合、基板10の一面11側をモールド樹脂50で封止しつつ、基板10の他面12側をモールド樹脂50で封止せずに露出させた、いわゆるハーフモールド構造とされている。モールド樹脂50は、基板10の一面11と接する面となる下面50a、下面と反対側の上面50b、および、これら上下面50a、50bの間を連結する側面50cを有する板状とされている。上記した放熱部材40の表面は、上面50bから露出させられており、本実施形態の場合、放熱部材40の露出表面と上面50bとが同一平面となるように構成している。典型的には、モールド樹脂50は、上面形状が矩形形状で構成されるが、他の多角形などであっても構わない。   The mold resin 50 is made of a thermosetting resin such as an epoxy resin, and is formed by a transfer molding method using a mold or a compression molding method. In the case of the present embodiment, a so-called half mold structure is formed in which the one surface 11 side of the substrate 10 is sealed with the mold resin 50 and the other surface 12 side of the substrate 10 is exposed without being sealed with the mold resin 50. . The mold resin 50 has a plate shape having a lower surface 50a that is a surface in contact with the one surface 11 of the substrate 10, an upper surface 50b opposite to the lower surface, and a side surface 50c that connects the upper and lower surfaces 50a and 50b. The surface of the heat radiating member 40 is exposed from the upper surface 50b. In the present embodiment, the exposed surface of the heat radiating member 40 and the upper surface 50b are configured to be in the same plane. Typically, the mold resin 50 is configured to have a rectangular top surface shape, but may be another polygonal shape or the like.

以上のような構造により、本実施形態にかかる電子装置に備えられるモールドパッケージが構成されている。   With the above structure, a mold package provided in the electronic device according to the present embodiment is configured.

このような構成の電子装置では、発熱素子となる電子部品20の下方に導体層14を配置し、電子部品20で発した熱を導体層14に伝えるようにしている。そして、導体層14を通じて基板10の平面方向に伝熱され、これが放熱部材40に伝わって放熱部材40のうちモールド樹脂50から露出させられた上面より外部に放出される。このとき、放熱部材40と導体層14との間に基板10の絶縁材料部分が存在することから、この絶縁材料部分によって伝熱が阻害され得るが、基板10の厚み自体が薄く、放熱部材40と導体層14との間に介在する絶縁材料部分の厚みも当然薄い。このため、放熱部材40と導体層14との間に基板10の絶縁材料部分が存在していても、あまり伝熱が阻害されることなく、導体層14から放熱部材40への伝熱が行われるようにできる。特に、放熱部材40と導体層14との間に介在する絶縁材料部分を高熱伝導率としておけば、より導体層14から放熱部材40への伝熱が良好に行われるようにできる。例えば、基板10がコア層とコア層の両面に配置されるビルドアップ層とを有した構成とされる場合、ビルドアップ層をコア層よりも高熱伝導率の材料で構成しておけば良い。   In the electronic device having such a configuration, the conductor layer 14 is disposed below the electronic component 20 serving as a heating element, and heat generated by the electronic component 20 is transmitted to the conductor layer 14. Then, heat is transferred in the plane direction of the substrate 10 through the conductor layer 14, and is transmitted to the heat radiating member 40 and is discharged to the outside from the upper surface of the heat radiating member 40 exposed from the mold resin 50. At this time, since there is an insulating material portion of the substrate 10 between the heat radiating member 40 and the conductor layer 14, heat transfer can be hindered by this insulating material portion, but the thickness of the substrate 10 itself is thin and the heat radiating member 40. Of course, the thickness of the insulating material portion interposed between the conductor layer 14 and the conductor layer 14 is also thin. For this reason, even if there is an insulating material portion of the substrate 10 between the heat dissipation member 40 and the conductor layer 14, heat transfer from the conductor layer 14 to the heat dissipation member 40 is performed without hindering heat transfer. Can be In particular, if the insulating material portion interposed between the heat radiating member 40 and the conductor layer 14 has a high thermal conductivity, heat transfer from the conductor layer 14 to the heat radiating member 40 can be performed more favorably. For example, when the substrate 10 has a core layer and a build-up layer disposed on both sides of the core layer, the build-up layer may be made of a material having a higher thermal conductivity than the core layer.

そして、このように放熱部材40と導体層14との間に絶縁材料部分を介在させているため、電子部品20や導体層14と放熱部材40との間の絶縁を確保することも可能となる。したがって、ペルチェ素子等の放熱素子を必要とせず、かつ、発熱素子となる電子部品20と外部との絶縁を確保しつつ放熱を行うことが可能な放熱構造を有する電子装置にできる。   Since the insulating material portion is interposed between the heat dissipation member 40 and the conductor layer 14 as described above, it is possible to ensure insulation between the electronic component 20 or the conductor layer 14 and the heat dissipation member 40. . Therefore, it is possible to provide an electronic device having a heat dissipation structure that does not require a heat dissipation element such as a Peltier element and that can perform heat dissipation while ensuring insulation between the electronic component 20 serving as a heat generating element and the outside.

(第2実施形態)
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対して放熱部材40とモールド樹脂50との関係を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
(Second Embodiment)
A second embodiment of the present invention will be described. In this embodiment, the relationship between the heat dissipation member 40 and the mold resin 50 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment. Only explained.

図2に示すように、本実施形態では、放熱部材40の上面がモールド樹脂50の上面50aから露出しておらず、モールド樹脂50に被覆された状態となっている。つまり、モールド樹脂50の上面50bの方が放熱部材40よりも基板10の一面11からの高さが高くされている。ただし、放熱部材40の上面を覆っているモールド樹脂50の厚みは薄く、例えば0.5mm以下となっている。   As shown in FIG. 2, in the present embodiment, the upper surface of the heat radiating member 40 is not exposed from the upper surface 50 a of the mold resin 50, and is covered with the mold resin 50. That is, the height of the upper surface 50 b of the mold resin 50 from the one surface 11 of the substrate 10 is higher than that of the heat dissipation member 40. However, the thickness of the mold resin 50 covering the upper surface of the heat radiating member 40 is thin, for example, 0.5 mm or less.

このように、放熱部材40の上面がモールド樹脂50で被覆された状態となっていても、薄いモールド樹脂50を通じて放熱が行えるため、第1実施形態と同様の効果を得ることができる。放熱部材40の上面を被覆するモールド樹脂50が厚いと放熱が十分に行えなくなるが、薄くすることで、熱設計上問題ないレベルにできる。   Thus, even if the upper surface of the heat radiating member 40 is covered with the mold resin 50, heat can be radiated through the thin mold resin 50, so that the same effect as in the first embodiment can be obtained. If the mold resin 50 covering the upper surface of the heat radiating member 40 is thick, heat radiation cannot be performed sufficiently.

ここで、上記したように、モールド樹脂50については、トランスファーモールド法やコンプレッションモールド法により成形されるが、成形時に放熱部材40の上面をモールド樹脂50から露出させるには、成形型の内壁面を放熱部材40の上面に当接させる必要がある。しかしながら、成形型の内壁面を確実に放熱部材40の上面に当接させるのは難しい。   Here, as described above, the mold resin 50 is molded by a transfer molding method or a compression molding method. To expose the upper surface of the heat dissipation member 40 from the mold resin 50 during molding, the inner wall surface of the molding die is used. It is necessary to contact the upper surface of the heat radiating member 40. However, it is difficult to reliably bring the inner wall surface of the mold into contact with the upper surface of the heat dissipation member 40.

特に、コンプレッションモールド法によってモールド樹脂50を成形する場合に困難である。すなわち、コンプレッションモールド法では、基板10の下面12側に下型を当接させると共に、上面11側にキャビティを構成する開口部が設けられた上型を当接させ、上型に形成された開口部内に樹脂粉末を充填した状態でプランジャを摺動させて成形する。このとき、プランジャの挿入量によって、モールド樹脂50の上面50bの高さが決まるが、確実に上面50bの高さを放熱部材40の上面に合わせることが難しく、挿入量が多いと放熱部材40を基板10側に押圧してしまい、基板10にダメージを与え兼ねない。これに対して、本実施形態のようにモールド樹脂50の上面50bの方が放熱部材40の上面よりも基板10の一面11からの高さが高くなるようにすると、プランジャによって放熱部材40を押圧してしまうことを防止できる。このため、特にコンプレッションモールド法によってモールド樹脂50を成形する場合には、本実施形態のようにモールド樹脂50によって薄く残した構造とすることで、プランジャにて放熱部材40が押圧されて基板10にダメージが加わることを防止できる。   In particular, it is difficult to mold the mold resin 50 by the compression molding method. That is, in the compression molding method, the lower mold is brought into contact with the lower surface 12 side of the substrate 10, and the upper mold having the opening that constitutes the cavity is brought into contact with the upper surface 11, thereby opening the upper mold. Molding is performed by sliding the plunger in a state where the resin powder is filled in the portion. At this time, the height of the upper surface 50b of the mold resin 50 is determined by the amount of insertion of the plunger. However, it is difficult to reliably match the height of the upper surface 50b with the upper surface of the heat dissipation member 40. If it presses to the board | substrate 10 side, it may damage the board | substrate 10. On the other hand, when the height of the upper surface 50b of the mold resin 50 is higher than the upper surface of the heat radiating member 40 from the one surface 11 as in the present embodiment, the plunger urges the heat radiating member 40. Can be prevented. For this reason, in particular, when the mold resin 50 is molded by the compression molding method, the heat radiation member 40 is pressed by the plunger and pressed against the substrate 10 by using a structure in which the mold resin 50 is left thin as in the present embodiment. Damage can be prevented from being added.

(第3実施形態)
本発明の第3実施形態について説明する。本実施形態は、第1実施形態に対して放熱部材40とモールド樹脂50との関係を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
(Third embodiment)
A third embodiment of the present invention will be described. In this embodiment, the relationship between the heat dissipation member 40 and the mold resin 50 is changed with respect to the first embodiment, and the other parts are the same as those in the first embodiment. Only explained.

図3に示すように、本実施形態では、放熱部材40の上面がモールド樹脂50の上面50aから突出した状態となっている。つまり、モールド樹脂50の上面50bよりも放熱部材40の方が基板10の一面11からの高さが高くされている。   As shown in FIG. 3, in the present embodiment, the upper surface of the heat radiating member 40 protrudes from the upper surface 50 a of the mold resin 50. That is, the heat dissipation member 40 is higher than the upper surface 50 b of the mold resin 50 from the one surface 11 of the substrate 10.

このように、放熱部材40の上面がモールド樹脂50から突出した状態となっていても、第1実施形態と同様の効果を得ることができる。   Thus, even when the upper surface of the heat dissipation member 40 protrudes from the mold resin 50, the same effect as that of the first embodiment can be obtained.

このような構成は、例えば第2実施形態のように、放熱部材40の上面がモールド樹脂50で被覆されるようにしつつ、後工程において、レーザ除去などによってモールド樹脂50を上面50aの前面を所定の厚さ分除去することで実現できる。このとき、放熱部材40が存在する部分については、放熱部材40の方が樹脂よりも除去量が少なくなるため、放熱部材40の上面がモールド樹脂50の上面から突出した状態になる。このようにして、本実施形態にかかる電子装置に備えられるモールドパッケージを構成することができる。   In such a configuration, for example, as in the second embodiment, while the upper surface of the heat radiating member 40 is covered with the mold resin 50, the mold resin 50 is placed on the front surface of the upper surface 50a by laser removal or the like in a later step. This can be realized by removing the thickness. At this time, for the portion where the heat radiating member 40 exists, the amount of removal of the heat radiating member 40 is smaller than that of the resin, so that the upper surface of the heat radiating member 40 protrudes from the upper surface of the mold resin 50. In this manner, a mold package provided in the electronic device according to the present embodiment can be configured.

(第4実施形態)
本発明の第4実施形態について説明する。本実施形態は、第1〜第3実施形態に対して電子部品30の配置を変更したものであり、その他については第1〜第3実施形態と同様であるため、第1〜第3実施形態と異なる部分についてのみ説明する。なお、図4では、第1実施形態に対して電子部品30の配置を変更した構造を表してあるが、第2、第3実施形態についても同様である。
(Fourth embodiment)
A fourth embodiment of the present invention will be described. In the present embodiment, the arrangement of the electronic component 30 is changed with respect to the first to third embodiments, and the other aspects are the same as those of the first to third embodiments, and thus the first to third embodiments. Only different parts will be described. FIG. 4 shows a structure in which the arrangement of the electronic components 30 is changed with respect to the first embodiment, but the same applies to the second and third embodiments.

図4に示すように、本実施形態では、基板10の他面12側に電子部品30を配置している。具体的には、他面12側にランドもしくは配線パターンの一部を構成する導体層16が形成されており、はんだ等の接合部材31を介して導体層16に電子部品30が配置されている。電子部品30を構成する素子によっては、モールド樹脂50内に封止することが難しいものもある。例えば、電子部品30を渦巻きコンデンサとする場合、モールド樹脂50内に配置すると、樹脂の硬化時の応力によってコンデンサの電極間隔が変化したり、電極間がショートしてしまうなどの不具合が発生し得る。このような場合には、モールド樹脂50内に電子部品30を封止するのではなく、モールド樹脂50の外側に電子部品30を配置する方が好ましい。   As shown in FIG. 4, in this embodiment, the electronic component 30 is disposed on the other surface 12 side of the substrate 10. Specifically, the conductor layer 16 constituting a part of the land or the wiring pattern is formed on the other surface 12 side, and the electronic component 30 is arranged on the conductor layer 16 via a joining member 31 such as solder. . Some elements constituting the electronic component 30 are difficult to seal in the mold resin 50. For example, when the electronic component 30 is a spiral capacitor, if the electronic component 30 is disposed in the mold resin 50, a problem such as a change in the electrode interval of the capacitor due to stress at the time of curing of the resin or a short circuit between the electrodes may occur. . In such a case, it is preferable to dispose the electronic component 30 outside the mold resin 50 instead of sealing the electronic component 30 in the mold resin 50.

このため、本実施形態のように、基板10のうちモールド樹脂50の外側に電子部品30を配置することで、モールド樹脂50内に電子部品30を配置することによる不具合を抑制することが可能となる。また、電子部品30の配置場所を基板10の一面11側にすることもできるが、一面11側にすると、基板10の面積の大型化を招くことになる。このため、本実施形態のように、基板10の他面12側に電子部品30を配置することで、上記効果が得られるのに加えて、基板10の面積の小型化を実現することが可能となる。   Therefore, as in the present embodiment, by disposing the electronic component 30 outside the mold resin 50 in the substrate 10, it is possible to suppress problems due to the electronic component 30 being disposed in the mold resin 50. Become. In addition, although the electronic component 30 can be arranged on the one surface 11 side of the substrate 10, if the electronic component 30 is disposed on the one surface 11 side, the area of the substrate 10 is increased. For this reason, by arranging the electronic component 30 on the other surface 12 side of the substrate 10 as in this embodiment, in addition to obtaining the above effects, it is possible to reduce the area of the substrate 10. It becomes.

また、基板10の他面12側においてヒートシンクなどを配置することで電子部品20で発した熱を放出させる形態もあり得る。しかしながら、電子部品30を他面12側に配置する場合には、ヒートシンクの配置スペースを確保できないことがある。基板10の面積を拡大すればヒートシンクの配置スペースを確保できるが、電子部品30を他面12側に配置している意味が無くなってしまう。このため、本実施形態のように、他面12に電子部品30が配置されるような形態とされる場合に、放熱部材40によって基板10の一面11側より放熱が行えるようにすることは特に有効である。   Further, there may be a form in which heat generated by the electronic component 20 is released by arranging a heat sink or the like on the other surface 12 side of the substrate 10. However, in the case where the electronic component 30 is arranged on the other surface 12 side, there may be a case where the arrangement space for the heat sink cannot be secured. If the area of the substrate 10 is enlarged, a heat sink arrangement space can be secured, but the meaning of arranging the electronic component 30 on the other surface 12 side is lost. For this reason, when it is set as the form where the electronic component 30 is arrange | positioned at the other surface 12 like this embodiment, it is especially possible to perform heat radiation from the one surface 11 side of the board | substrate 10 by the heat radiating member 40. It is valid.

(他の実施形態)
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
(Other embodiments)
The present invention is not limited to the embodiment described above, and can be appropriately changed within the scope described in the claims.

例えば、上記各実施形態では、基板10の一面11上に電子部品20、30を実装したのち、電子部品20、30および放熱部材40をモールド樹脂50で樹脂封止する形態が適用された電子装置の一例を示したが、上記各実施形態で説明した構造でなくても良い。例えば、発熱部材の一例として、発熱素子にて構成される電子部品20を例に挙げたが、大電流が流される配線なども発熱部材となる。このため、大電流が流される配線を導体層14に接続し、当該配線から発した熱が放熱部材40を介して放出されるようにしても良い。その場合、導体層14を大電流が流される配線の一部として用いても良い。   For example, in each of the above-described embodiments, an electronic device to which the electronic components 20 and 30 are mounted on the one surface 11 of the substrate 10 and then the electronic components 20 and 30 and the heat dissipation member 40 are sealed with the mold resin 50 is applied. However, the structure may not be the one described in each of the above embodiments. For example, as an example of the heat generating member, the electronic component 20 composed of a heat generating element has been described as an example. However, a wiring through which a large current flows is also a heat generating member. For this reason, a wiring through which a large current flows may be connected to the conductor layer 14 so that heat generated from the wiring is released through the heat dissipation member 40. In that case, the conductor layer 14 may be used as part of the wiring through which a large current flows.

10 基板
11 一面
12 他面
13、14 導体層(第1、第2導体層)
20、30 電子部品
40 放熱部材
50 モールド樹脂
10 Substrate 11 One side 12 Other side 13, 14 Conductor layer (first and second conductor layers)
20, 30 Electronic component 40 Heat dissipation member 50 Mold resin

Claims (5)

一面(11)および前記一面の反対面となる他面(12)を有し、絶縁材料により構成されると共に前記一面に第1導体層(13)が形成された基板(10)と、
前記基板の一面側に配置された発熱部材(20)と、
前記基板の一面側に設けられ、前記基板の一面側となる下面(50a)、該下面と反対側の面となる上面(50b)、および、前記下面と前記上面とを連結する側面(50c)とを有し、前記発熱部材を封止するモールド樹脂(50)と、
前記基板の一面のうち前記発熱部材が配置された位置において、該基板の一面から該基板の内部に形成されたビア(15)と、
前記基板の内部に形成されると共に前記ビアに接続され、前記発熱部材と対向する位置から該基板の平面方向に延設された第2導体層(14)と、
前記基板の一面側に設けられ、前記基板のベースとなる絶縁材料を挟んで前記第2導体層のうち前記発熱部材と対向する位置から前記基板の水平方向に延設された部分と対向して配置されると共に、前記モールド樹脂の上面に向けて延設され、前記モールド樹脂よりも高熱伝導率の材料で構成された放熱部材(40)と、を備えていることを特徴とする電子装置。
A substrate (10) having one surface (11) and another surface (12) opposite to the one surface, which is made of an insulating material and has a first conductor layer (13) formed on the one surface;
A heating member (20) disposed on one side of the substrate;
A lower surface (50a) provided on one surface side of the substrate and serving as one surface side of the substrate, an upper surface (50b) serving as a surface opposite to the lower surface, and a side surface (50c) connecting the lower surface and the upper surface. A mold resin (50) for sealing the heat generating member,
A via (15) formed from one surface of the substrate to the inside of the substrate at a position where the heat generating member is disposed on one surface of the substrate;
A second conductor layer (14) formed in the substrate and connected to the via and extending in a plane direction of the substrate from a position facing the heating member;
Provided on one side of the substrate, facing a portion of the second conductor layer extending in the horizontal direction from the position facing the heat generating member of the second conductor layer across an insulating material serving as a base of the substrate An electronic device comprising: a heat dissipating member (40) which is disposed and extends toward the upper surface of the mold resin and is made of a material having a higher thermal conductivity than the mold resin.
前記放熱部材は、前記モールド樹脂の上面から露出させられていることを特徴とする請求項1に記載の電子装置。   The electronic device according to claim 1, wherein the heat radiating member is exposed from an upper surface of the mold resin. 前記放熱部材は、前記モールド樹脂によって被覆されており、前記モールド樹脂のうち前記放熱部材を被覆している部分の厚みが0.5mm以下とされていることを特徴とする請求項1に記載の電子装置。   The said heat radiating member is coat | covered with the said mold resin, The thickness of the part which has coat | covered the said heat radiating member among the said mold resin is 0.5 mm or less, The Claim 1 characterized by the above-mentioned. Electronic equipment. 前記発熱部材は、前記第1導体層に実装されており、
前記第1導体層のうち前記発熱部材が実装された部分が前記ビアを介して前記第2導体層に熱的および電気的に接続されていることを特徴とする請求項1ないし3のいずれか1つに記載の電子装置。
The heat generating member is mounted on the first conductor layer,
The portion of the first conductor layer on which the heat generating member is mounted is thermally and electrically connected to the second conductor layer through the via. The electronic device according to one.
前記基板の他面側に、電子部品(30)が実装されていることを特徴とする請求項1ないし4のいずれか1つに記載の電子装置。   The electronic device according to claim 1, wherein an electronic component is mounted on the other surface side of the substrate.
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