JP5239736B2 - Electronic equipment - Google Patents

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JP5239736B2
JP5239736B2 JP2008271952A JP2008271952A JP5239736B2 JP 5239736 B2 JP5239736 B2 JP 5239736B2 JP 2008271952 A JP2008271952 A JP 2008271952A JP 2008271952 A JP2008271952 A JP 2008271952A JP 5239736 B2 JP5239736 B2 JP 5239736B2
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substrate
power element
heat
electronic device
conductive adhesive
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JP2010103231A (en
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正幸 竹中
浅井　　康富
慎也 内堀
渉 小林
俊夫 鈴木
力也 上村
君治 粥川
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/19015—Structure including thin film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Description

本発明は、第１の基板上に搭載されたパワー素子と、その上に配置された第２の基板とを電気的に接続したものを、モールド樹脂により封止してなる電子装置に関する。   The present invention relates to an electronic device in which a power element mounted on a first substrate and a second substrate disposed thereon are electrically connected with a mold resin.

従来より、この種の電子装置としては、第１の基板としてリードフレームの一面上に搭載されたパワー素子と、パワー素子の上に配置された第２の基板としての回路基板とを備えたものが提案されている（たとえば、特許文献１参照）。   Conventionally, this type of electronic device includes a power element mounted on one surface of a lead frame as a first substrate and a circuit board as a second substrate disposed on the power element. Has been proposed (see, for example, Patent Document 1).

ここで、特許文献１では、第２の基板としての回路基板におけるパワー素子とは反対側の面には、電子部品が搭載されている。そして、リードフレームを上部に立ち上げ折り曲げてモールド樹脂で封止し、その後、回路基板をリードフレームと接続して、さらに樹脂で封止し、電子装置を形成する。
特開２００１−８５６１３号公報 Here, in Patent Document 1, an electronic component is mounted on the surface opposite to the power element in the circuit board as the second board. Then, the lead frame is raised and bent upward and sealed with mold resin, and then the circuit board is connected to the lead frame and further sealed with resin to form an electronic device.
JP 2001-85613 A

しかしながら、上記従来のものでは、リードフレームを上方に折り曲げ、リードフレームを介してパワー素子と第２の基板としての回路基板とを接続するため、装置の厚さが大きくなり、大幅な小型化は望めない。   However, in the above-described conventional device, the lead frame is bent upward, and the power element and the circuit board as the second substrate are connected via the lead frame, so that the thickness of the device is increased, and a significant reduction in size is achieved. I can't hope.

本発明は、上記問題に鑑みてなされたものであり、第１の基板上に搭載されたパワー素子と、その上に配置された第２の基板とを電気的に接続したものを、モールド樹脂により封止してなる電子装置において、電子装置の厚さを小型化するのに適した構成を実現することを目的とする。   The present invention has been made in view of the above problem, and a power resin mounted on a first substrate and a second substrate disposed thereon are electrically connected to a mold resin. An object of the present invention is to realize a configuration suitable for reducing the thickness of the electronic device in the electronic device formed by sealing.

上記目的を達成するため、請求項１に記載の発明では、第１の基板（１０）と、第１の基板（１０）の一面に搭載されたパワー素子（３０）と、一面を第１の基板（１０）の一面およびパワー素子（３０）に対向させて配置された第２の基板（２０）とを備え、第２の基板（２０）の一面とパワー素子（３０）とは、導電性を有する導電性接着部材（６０）を介して直接接着されて電気的に接続されており、第１の基板（１０）、パワー素子（３０）、および第２の基板（２０）は、モールド樹脂（５０）により封止されており、
第２の基板（２０）の一面とは反対側の他面には、電子部品（４０）および電子部品（４０）よりも駆動時の発熱が大きい発熱素子（４１）が、モールド樹脂（５０）で封止された状態で搭載されており、第２の基板（２０）の一面のうち発熱素子（４１）と同じ位置には、放熱部材（９０）が熱的に接続されており、発熱素子（４１）からの熱を放熱部材（９０）により放熱するようになっていることを特徴とする。 In order to achieve the above object, according to the first aspect of the present invention, the first substrate (10), the power element (30) mounted on one surface of the first substrate (10), and one surface of the first substrate (10) A second substrate (20) disposed opposite one surface of the substrate (10) and the power element (30), and the one surface of the second substrate (20) and the power element (30) are electrically conductive The first substrate (10), the power element (30), and the second substrate (20) are molded resin and are directly bonded and electrically connected via a conductive adhesive member (60) having (50) ,
On the other surface opposite to the one surface of the second substrate (20), an electronic component (40) and a heating element (41) that generates more heat during driving than the electronic component (40) are molded resin (50). The heat radiation member (90) is thermally connected to the same position as the heat generating element (41) on one surface of the second substrate (20). The heat from (41) is dissipated by the heat dissipating member (90) .

それによれば、パワー素子（３０）とその上の第２の基板（２０）とを、導電性接着部材（６０）を介して直接接着しているから、電子装置の厚さ（つまり、両基板（１０、２０）の積層方向の寸法）を小型化するのに適した構成を実現することができる。また、第２の基板（２０）の一面のうち発熱素子（４１）と同じ位置には、放熱部材（９０）が熱的に接続されており、発熱素子（４１）からの熱を放熱部材（９０）により放熱するようになっているから、第２の基板（２０）に発熱の大きな発熱素子（４１）が設けられていても、放熱部材（９０）を介して適切な放熱が可能となる。 According to this, since the power element (30) and the second substrate (20) thereon are directly bonded via the conductive adhesive member (60), the thickness of the electronic device (that is, both substrates) (10, 20) in the stacking direction) can be realized. Further, a heat radiating member (90) is thermally connected to the same position as the heat generating element (41) on one surface of the second substrate (20), and the heat from the heat generating element (41) is transferred to the heat radiating member ( 90), heat can be appropriately radiated through the heat radiating member (90) even if the second substrate (20) is provided with a heat generating element (41) that generates a large amount of heat. .

ここで、請求項２に記載の発明のように、導電性接着部材（６０）としては、はんだもしくは導電性接着剤を採用することができる。   Here, as in the invention described in claim 2, solder or a conductive adhesive can be employed as the conductive adhesive member (60).

また、請求項３に記載の発明では、請求項１または２において、第２の基板（２０）の一面とは反対側の他面側にも、パワー素子（３０）が導電性接着部材（６０）を介して直接接着されて電気的に接続されるとともに、モールド樹脂（５０）によって封止されており、第２の基板（２０）の一面側のパワー素子（３０）と他面側のパワー素子（３０）とは、同じ位置に設けられていることを特徴とする。   Moreover, in invention of Claim 3, in Claim 1 or 2, the power element (30) is attached to the conductive adhesive member (60) on the other surface side opposite to the one surface of the second substrate (20). ) Are directly bonded and electrically connected to each other, and are sealed with a mold resin (50), and the power element (30) on one side of the second substrate (20) and the power on the other side. The element (30) is provided at the same position.

それによれば、第２の基板（２０）の一面側のパワー素子（３０）と他面側のパワー素子（３０）とが、同じ位置にあるので、第２の基板（２０）の反りやうねりの影響を少なくすることが可能となる。   According to this, since the power element (30) on the one surface side of the second substrate (20) and the power element (30) on the other surface side are in the same position, the warp and undulation of the second substrate (20). It is possible to reduce the influence of.

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。   In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係る電子装置１００の概略断面構成を示す図である。この電子装置１００は、たとえば自動車に搭載され、車両制御用のＥＣＵなどの電子装置として用いられる。 (First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of an electronic device 100 according to the first embodiment of the present invention. The electronic device 100 is mounted on, for example, an automobile and used as an electronic device such as an ECU for vehicle control.

本実施形態の電子装置１００は、大きくは、第１の基板１０と、第１の基板１０の一面（図１中の上面）に搭載されたパワー素子３０と、一面（図１中の下面）を第１の基板１０の一面およびパワー素子３０に対向させて配置された第２の基板２０と、第２の基板２０の一面とは反対側の他面（図１中の上面）に搭載された電子部品４０とを備え、これら第１の基板１０、パワー素子３０、第２の基板２０、および電子部品４０が、モールド樹脂５０により封止された構成を備えている。   The electronic device 100 of the present embodiment is broadly divided into a first substrate 10, a power element 30 mounted on one surface (upper surface in FIG. 1) of the first substrate 10, and one surface (lower surface in FIG. 1). Is mounted on one surface of the first substrate 10 and the second substrate 20 disposed so as to face the power element 30, and on the other surface opposite to the one surface of the second substrate 20 (upper surface in FIG. 1). The first substrate 10, the power element 30, the second substrate 20, and the electronic component 40 are sealed with a mold resin 50.

第１の基板１０は、銅または銅系合金などから成るリードフレームや、セラミック基板、金属基板などの回路基板である。パワー素子３０は、パワーＭＯＳＦＥＴ、ＩＧＢＴ、ダイオード、複合ＩＣなどであり、第１の基板１０の一面にダイボンド材１１を介して接続されている。そして、パワー素子３０と第１の基板１０とは電気的・機械的に接続されている。   The first substrate 10 is a circuit board such as a lead frame made of copper or a copper-based alloy, a ceramic substrate, or a metal substrate. The power element 30 is a power MOSFET, IGBT, diode, composite IC, or the like, and is connected to one surface of the first substrate 10 via a die bond material 11. The power element 30 and the first substrate 10 are electrically and mechanically connected.

第２の基板２０は、セラミック基板、樹脂基板などの回路基板である。第２の基板２０の一面は、パワー素子３０を覆うように第１の基板１０の一面に対向しており、第２の基板の一面とパワー素子３０とは、導電性を有する導電性接着部材６０を介して直接接着されている。それによって、これら第２の基板２０とパワー素子３０とは電気的に接続されている。   The second substrate 20 is a circuit substrate such as a ceramic substrate or a resin substrate. One surface of the second substrate 20 is opposed to one surface of the first substrate 10 so as to cover the power element 30, and the one surface of the second substrate and the power element 30 are conductive adhesive members having conductivity. Directly bonded through 60. Thereby, the second substrate 20 and the power element 30 are electrically connected.

導電性接着部材６０は、はんだや導電性接着剤などよりなる。はんだとしては、一般的な共晶はんだ、鉛フリーはんだなどが採用され、導電性接着剤としては、一般的な金属フィラーを樹脂に含有させたものや、はんだフィラーとゴムマトリックスからなるものが採用される。   The conductive adhesive member 60 is made of solder, a conductive adhesive, or the like. As solder, general eutectic solder, lead-free solder, etc. are used, and as conductive adhesive, general metal filler in resin or solder filler and rubber matrix is used. Is done.

はんだフィラーとゴムマトリックスからなる導電性接着剤によれば、第２の基板２０の反りやうねりによって、パワー素子３０と第２の基板２０の一面との接触性がばらつくのを抑制しやすい。これは、ゴム弾性により、第２の基板２０の反りやうねりを吸収するためである。   According to the conductive adhesive composed of the solder filler and the rubber matrix, it is easy to suppress the contact between the power element 30 and one surface of the second substrate 20 due to warpage or undulation of the second substrate 20. This is to absorb warpage and undulation of the second substrate 20 due to rubber elasticity.

また、第２の基板２０の他面には、電子部品４０が搭載されている。この電子部品４０としては、一般的な回路基板に表面実装されるものであれば特に限定しないが、たとえば、ＩＣチップやトランジスタ素子、マイコン、抵抗、コンデンサなどが挙げられ、ダイボンド実装やワイヤボンド実装などにより、部品実装が行われている。   An electronic component 40 is mounted on the other surface of the second substrate 20. The electronic component 40 is not particularly limited as long as it is surface-mounted on a general circuit board. Examples of the electronic component 40 include an IC chip, a transistor element, a microcomputer, a resistor, and a capacitor. For example, component mounting is performed.

そして、第２の基板２０の一面と他面とは、第２の基板２０の内部に設けられた図示しない内層配線などにより電気的に接続されており、当該内層配線、導電性接着部材６０を介して、電子部品４０とパワー素子３０とは電気的に接続されている。そして、たとえば、パワー素子３０から電子部品４０に電流が供給されるようになっている。   The one surface and the other surface of the second substrate 20 are electrically connected by an inner layer wiring (not shown) provided in the second substrate 20, and the inner layer wiring and the conductive adhesive member 60 are connected to each other. Thus, the electronic component 40 and the power element 30 are electrically connected. For example, a current is supplied from the power element 30 to the electronic component 40.

また、図１に示されるように、第２の基板２０の端部の外側には、金属などよりなるリード７０が設けられている。そして、このリード７０と第２の基板２０とは、アルミや金などのボンディングワイヤ７１により結線され、電気的に接続されている。   As shown in FIG. 1, a lead 70 made of metal or the like is provided outside the end portion of the second substrate 20. The lead 70 and the second substrate 20 are connected by a bonding wire 71 such as aluminum or gold and are electrically connected.

さらに、本実施形態では、第１の基板１０の一面とは反対側の他面（図１中の下面）には、銅などよりなるヒートシンク８０が設けられ、第１の基板１０とヒートシンク８０とが接着などにより接合されている。   Further, in the present embodiment, a heat sink 80 made of copper or the like is provided on the other surface (the lower surface in FIG. 1) opposite to the one surface of the first substrate 10, and the first substrate 10, the heat sink 80, Are joined by bonding or the like.

そして、モールド樹脂５０は、上述した各部材１０〜４０、６０〜８０を包み込むように封止している。このモールド樹脂５０は、エポキシ樹脂などの一般的なモールド材料よりなり、金型を用いたトランスファーモールド法などにより成形されるものである。   And the mold resin 50 is sealed so that each member 10-40, 60-80 mentioned above may be wrapped. The mold resin 50 is made of a general mold material such as an epoxy resin, and is molded by a transfer molding method using a mold.

ここで、ヒートシンク８０における第１の基板１０とは反対側の面は、モールド樹脂５０から露出しており、パワー素子３０や両基板１０、２０に発生した熱は、ヒートシンク８０から外部に放熱されるようになっている。また、上記リード７０の一部もモールド樹脂５０から露出しており、このリード７０の露出部分にて外部との電気的な接続がなされるようになっている。   Here, the surface of the heat sink 80 opposite to the first substrate 10 is exposed from the mold resin 50, and the heat generated in the power element 30 and both the substrates 10 and 20 is dissipated from the heat sink 80 to the outside. It has become so. A part of the lead 70 is also exposed from the mold resin 50, and the exposed portion of the lead 70 is electrically connected to the outside.

次に、本実施形態の電子装置１００の製造方法について、図２を参照して述べる。図２は、本実施形態の製造方法を示す工程図であり、各工程におけるワークの断面構成を示している。   Next, a method for manufacturing the electronic device 100 of this embodiment will be described with reference to FIG. FIG. 2 is a process diagram showing the manufacturing method of the present embodiment, and shows a cross-sectional configuration of a workpiece in each process.

まず、図２（ａ）に示されるように、第２の基板２０の一面に導電性接着部材６０を介してパワー素子３０を接着するとともに、第２の基板２０の他面に電子部品４０を搭載する。   First, as shown in FIG. 2A, the power element 30 is bonded to one surface of the second substrate 20 via the conductive adhesive member 60, and the electronic component 40 is mounted to the other surface of the second substrate 20. Mount.

具体的には、パワー素子３０については、導電性接着部材６０がはんだである場合には、印刷による配置、リフローなどを行い、導電性接着剤である場合には、塗布・硬化などを行う。また、電子部品４０については、一般のダイボンド実装やワイヤボンディングなどを行う。なお、基板２０にパワー素子３０を接続する際に、はんだで接続する場合には、アンダーフィルを付与することにより接続性を確保するようにしてもよい。   Specifically, for the power element 30, when the conductive adhesive member 60 is a solder, placement and reflow are performed by printing, and when it is a conductive adhesive, coating and curing are performed. The electronic component 40 is subjected to general die bonding mounting, wire bonding, or the like. In addition, when connecting the power element 30 to the board | substrate 20, when connecting with solder, you may make it ensure connectivity by providing an underfill.

その後、図２（ｂ）に示されるように、第２の基板２０の他面と第１の基板１０の一面とを対向配置させる。このとき、第１の基板１０はヒートシンク８０に取り付けられている。そして、はんだや導電性ペーストなどよりなるダイボンド材１１を介して、パワー素子３０を第１の基板１０の一面に接続する。   Thereafter, as shown in FIG. 2B, the other surface of the second substrate 20 and one surface of the first substrate 10 are arranged to face each other. At this time, the first substrate 10 is attached to the heat sink 80. Then, the power element 30 is connected to one surface of the first substrate 10 through a die bond material 11 made of solder, conductive paste, or the like.

続いて、図２（ｃ）に示されるように、リード７０を第２の基板２０の外側に配置し、これらの間でワイヤボンディングを行い、ボンディングワイヤ７１を形成する。そして、このものを図示しない金型に設置し、モールド樹脂５０の注入・充填を行い、モールド樹脂５０による封止を行う。こうして、本実施形態の電子装置１００ができあがる。   Subsequently, as shown in FIG. 2C, the lead 70 is disposed outside the second substrate 20, and wire bonding is performed between them to form a bonding wire 71. And this thing is installed in the metal mold | die which is not shown in figure, the mold resin 50 is inject | poured and filled, and sealing with the mold resin 50 is performed. Thus, the electronic device 100 of this embodiment is completed.

ところで、本実施形態によれば、パワー素子３０とその上の第２の基板２０とを、導電性接着部材６０を介して直接接着しているから、電子装置１００の厚さ（つまり、両基板１０、２０の積層方向の寸法）が小型化する。従来では、上述のように、リードフレームを立ち上げていたので、その分、厚くなっていたが、本実施形態ではそれに比べて、大幅な厚さの低減が図れる。   By the way, according to the present embodiment, since the power element 30 and the second substrate 20 thereon are directly bonded via the conductive adhesive member 60, the thickness of the electronic device 100 (that is, both substrates). 10 and 20 in the stacking direction). Conventionally, as described above, since the lead frame has been started up, the thickness of the lead frame has been increased. However, in this embodiment, the thickness can be significantly reduced as compared with that.

（第２実施形態）
図３は、本発明の第２実施形態に係る電子装置１００の製造方法を示す工程図であり、各工程におけるワークの断面構成を示している。ここでは、上記第１実施形態の製造方法との相違点を中心に述べることとする。 (Second Embodiment)
FIG. 3 is a process diagram showing a method for manufacturing the electronic device 100 according to the second embodiment of the present invention, and shows a cross-sectional configuration of a workpiece in each process. Here, the difference from the manufacturing method of the first embodiment will be mainly described.

まず、図３（ａ）に示されるように、本製造方法では、第２の基板２０の他面に電子部品４０を搭載する。また、図３（ｂ）に示されるように、第１の基板１０にヒートシンク８０を取り付けるとともに、第１の基板１０の一面にパワー素子３０を搭載する。   First, as shown in FIG. 3A, in this manufacturing method, the electronic component 40 is mounted on the other surface of the second substrate 20. As shown in FIG. 3B, the heat sink 80 is attached to the first substrate 10, and the power element 30 is mounted on one surface of the first substrate 10.

その後、図３（ｃ）に示されるように、第２の基板２０の他面と第１の基板１０の一面とを対向配置させて、導電性接着部材６０を介してパワー素子３０を第２の基板２０の一面に接着する。   Thereafter, as shown in FIG. 3C, the second surface of the second substrate 20 and the one surface of the first substrate 10 are disposed to face each other, and the power element 30 is secondly connected via the conductive adhesive member 60. It adheres to one surface of the substrate 20.

続いて、図３（ｄ）に示されるように、リード７０と第２の基板２０とのワイヤボンディングを行い、次に、モールド樹脂５０による封止を行う。こうして、本実施形態においても、上記第１実施形態と同様の電子装置１００ができあがる。   Subsequently, as shown in FIG. 3D, wire bonding between the lead 70 and the second substrate 20 is performed, and then sealing with the mold resin 50 is performed. Thus, also in the present embodiment, the same electronic device 100 as in the first embodiment is completed.

なお、上記図１に示される電子装置１００を製造するとき、各基板１０、２０、パワー素子３０、電子部品４０の組み付け順序は、上記第１及び第２実施形態に述べた順序に限定されるものではなく、それ以外の方法も適宜採用が可能である。   When the electronic device 100 shown in FIG. 1 is manufactured, the assembly order of the substrates 10 and 20, the power element 30, and the electronic component 40 is limited to the order described in the first and second embodiments. However, other methods can be used as appropriate.

（第３実施形態）
図４は、本発明の第３実施形態に係る電子装置の概略断面構成を示す図である。本実施形態では、上記第１実施形態との相違点を中心に述べることとする。 (Third embodiment)
FIG. 4 is a diagram showing a schematic cross-sectional configuration of an electronic device according to the third embodiment of the present invention. In this embodiment, the difference from the first embodiment will be mainly described.

図４に示されるように、本実施形態では、第２の基板２０の他面側にも、パワー素子３０が導電性接着部材６０を介して直接接着されて電気的に接続されるとともに、当該他面側のパワー素子３０はモールド樹脂６０によって封止されている。そして、第２の基板２０の一面側のパワー素子３０と他面側のパワー素子３０とは、第２の基板２０を挟んで同じ位置に設けられている。   As shown in FIG. 4, in the present embodiment, the power element 30 is directly bonded and electrically connected to the other surface side of the second substrate 20 via the conductive adhesive member 60. The power element 30 on the other side is sealed with a mold resin 60. The power element 30 on the one surface side of the second substrate 20 and the power element 30 on the other surface side are provided at the same position with the second substrate 20 in between.

つまり、第２の基板２０の一面に直交な方向から眺めたとき、第２の基板２０の一面側のパワー素子３０と他面側のパワー素子３０とは重なる位置に設けられている。ここで、第２の基板２０の他面側のパワー素子３０についても、当該一面側のパワー素子３０と同様、第１の基板１０およびヒートシンク８０に搭載されている。   That is, when viewed from a direction orthogonal to one surface of the second substrate 20, the power element 30 on the one surface side of the second substrate 20 and the power element 30 on the other surface side are provided at positions overlapping each other. Here, the power element 30 on the other surface side of the second substrate 20 is also mounted on the first substrate 10 and the heat sink 80 in the same manner as the power element 30 on the one surface side.

つまり、本実施形態の電子装置においては、装置の厚さ方向にて第２の基板２０を中心として両側（図４中の上下両側）で実質的に対称となるように、第２の基板２０側から、導電性接着部材６０、パワー素子３０、第１の基板１０、ヒートシンク８０が積層された構成とされている。   That is, in the electronic device according to the present embodiment, the second substrate 20 is substantially symmetrical on both sides (upper and lower sides in FIG. 4) about the second substrate 20 in the thickness direction of the device. From the side, the conductive adhesive member 60, the power element 30, the first substrate 10, and the heat sink 80 are stacked.

そして、本実施形態によれば、第２の基板２０の一面側のパワー素子３０と他面側のパワー素子３０とが、平面的に同じ位置にあるので、これら両パワー素子３０が受ける第２の基板２０の反りやうねりの影響を、少なくすることが可能となる。   And according to this embodiment, since the power element 30 on the one surface side of the second substrate 20 and the power element 30 on the other surface side are in the same position in a plane, the second power element 30 received by both the power elements 30. It is possible to reduce the influence of warpage and undulation of the substrate 20.

つまり、複数のパワー素子３０を備える電子装置の場合、第２の基板２０に反りやうねりなどがあると、それぞれのパワー素子３０毎に、第２の基板２０との接触性がばらつく恐れがあるが、本実施形態では、そのような問題が回避される。   In other words, in the case of an electronic device including a plurality of power elements 30, if the second substrate 20 is warped or swelled, the contact with the second substrate 20 may vary for each power element 30. However, in this embodiment, such a problem is avoided.

（第４実施形態）
図５は、本発明の第４実施形態に係る電子装置の概略断面構成を示す図である。本実施形態では、上記第１実施形態との相違点を中心に述べることとする。 (Fourth embodiment)
FIG. 5 is a diagram showing a schematic cross-sectional configuration of an electronic device according to the fourth embodiment of the present invention. In this embodiment, the difference from the first embodiment will be mainly described.

図５に示されるように、本実施形態では、第２の基板の他面には、電子部品４０よりも駆動時の発熱が大きい発熱素子４１が、電子部品４０とともに、モールド樹脂５０で封止された状態で搭載されている。この発熱素子４１としては、たとえば複合ＩＣなどが挙げられる。   As shown in FIG. 5, in this embodiment, a heating element 41 that generates more heat during driving than the electronic component 40 is sealed with a mold resin 50 along with the electronic component 40 on the other surface of the second substrate. It is mounted in the state that was done. An example of the heat generating element 41 is a composite IC.

そして、第１の基板１０の一面には、銅やアルミなどよりなる金属ブロックなど、放熱性に優れた材料よりなる放熱部材９０が設けられている。この放熱部材９０は第２の基板２０における一面のうち発熱素子４１と同じ位置に設けられている。   On one surface of the first substrate 10, a heat radiating member 90 made of a material having excellent heat radiating properties such as a metal block made of copper or aluminum is provided. The heat radiating member 90 is provided at the same position as the heat generating element 41 on one surface of the second substrate 20.

そして、放熱部材９０は、第２の基板２０および第１の基板１０とはんだ９１などの熱的接続部材を介して接続され、これら両基板１０、２０と熱的に接続されている。それにより、発熱素子４１からの熱が放熱部材９０により放熱されるようになっている。本実施形態によれば、第２の基板２０に発熱の大きな発熱素子４１が設けられていても、放熱部材９０を介して適切に放熱される。   The heat dissipating member 90 is connected to the second substrate 20 and the first substrate 10 via a thermal connecting member such as solder 91 and is thermally connected to both the substrates 10 and 20. Thereby, the heat from the heat generating element 41 is radiated by the heat radiating member 90. According to the present embodiment, even if the second substrate 20 is provided with the heat generating element 41 that generates a large amount of heat, the heat is appropriately radiated through the heat radiating member 90.

（他の実施形態）
なお、電子装置としては、第１の基板と、第１の基板の一面に搭載されたパワー素子と、一面を第１の基板の一面およびパワー素子に対向させて配置された第２の基板とを備え、第２の基板の一面とパワー素子とを、導電性接着部材を介して直接接着して電気的に接続し、第１の基板、パワー素子、および第２の基板を、モールド樹脂により封止したものであればよく、第２の基板の他面には上記電子部品は無いものであってもよい。 (Other embodiments)
The electronic device includes a first substrate, a power element mounted on one surface of the first substrate, and a second substrate disposed so that one surface faces the one surface of the first substrate and the power element. And directly connecting the one surface of the second substrate and the power element via a conductive adhesive member, and electrically connecting the first substrate, the power element, and the second substrate with a mold resin. What is necessary is just to be sealed, and the other surface of the second substrate may not have the electronic component.

また、第１の基板にはヒートシンクが取り付けられていなくてもよく、その場合、モールド樹脂から、第１の基板が直接露出しているものであってもよい。   Further, the heat sink may not be attached to the first substrate. In that case, the first substrate may be directly exposed from the mold resin.

本発明の第１実施形態に係る電子装置の概略断面図である。1 is a schematic cross-sectional view of an electronic device according to a first embodiment of the present invention. 第１実施形態の電子装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the electronic device of 1st Embodiment. 本発明の第２実施形態に係る電子装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the electronic device which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 3rd Embodiment of this invention. 本発明の第４実施形態に係る電子装置の概略断面図である。It is a schematic sectional drawing of the electronic device which concerns on 4th Embodiment of this invention.

符号の説明Explanation of symbols

１０ 第１の基板
２０ 第２の基板
３０ パワー素子
４０ 電子部品
４１ 発熱素子
５０ モールド樹脂
６０ 導電性接着部材
９０ 放熱部材 DESCRIPTION OF SYMBOLS 10 1st board | substrate 20 2nd board | substrate 30 Power element 40 Electronic component 41 Heating element 50 Mold resin 60 Conductive adhesive member 90 Heat dissipation member

Claims (3)

第１の基板（１０）と、
前記第１の基板（１０）の一面に搭載されたパワー素子（３０）と、
一面を前記第１の基板（１０）の前記一面および前記パワー素子（３０）に対向させて配置された第２の基板（２０）とを備え、
前記第２の基板（２０）の前記一面と前記パワー素子（３０）とは、導電性を有する導電性接着部材（６０）を介して直接接着されて電気的に接続されており、
前記第１の基板（１０）、前記パワー素子（３０）、および前記第２の基板（２０）は、モールド樹脂（５０）により封止されており、
前記第２の基板（２０）の前記一面とは反対側の他面には、電子部品（４０）および前記電子部品（４０）よりも駆動時の発熱が大きい発熱素子（４１）が、前記モールド樹脂（５０）で封止された状態で搭載されており、
前記第２の基板（２０）の前記一面のうち前記発熱素子（４１）と同じ位置には、放熱部材（９０）が熱的に接続されており、前記発熱素子（４１）からの熱を前記放熱部材（９０）により放熱するようになっていることを特徴とする電子装置。 A first substrate (10);
A power element (30) mounted on one surface of the first substrate (10);
A second substrate (20) disposed so that one surface faces the one surface of the first substrate (10) and the power element (30);
The one surface of the second substrate (20) and the power element (30) are directly bonded and electrically connected via a conductive adhesive member (60) having conductivity,
The first substrate (10), the power element (30), and the second substrate (20) are sealed with a mold resin (50) ,
On the other surface opposite to the one surface of the second substrate (20), an electronic component (40) and a heating element (41) that generates more heat during driving than the electronic component (40) are provided in the mold. It is mounted in a state sealed with resin (50),
A heat radiating member (90) is thermally connected to the same position of the one surface of the second substrate (20) as the heat generating element (41), and heat from the heat generating element (41) is transferred to the second substrate (20). An electronic device characterized in that heat is dissipated by a heat dissipating member (90) . 前記導電性接着部材（６０）は、はんだもしくは導電性接着剤であることを特徴とする請求項１に記載の電子装置。   The electronic device according to claim 1, wherein the conductive adhesive member is a solder or a conductive adhesive. 前記第２の基板（２０）の前記一面とは反対側の他面側にも、前記パワー素子（３０）が前記導電性接着部材（６０）を介して直接接着されて電気的に接続されるとともに、前記モールド樹脂（５０）によって封止されており、
前記第２の基板（２０）の前記一面側の前記パワー素子（３０）と前記他面側の前記パワー素子（３０）とは、同じ位置に設けられていることを特徴とする請求項１または２に記載の電子装置。 The power element (30) is also directly bonded and electrically connected to the other surface of the second substrate (20) opposite to the one surface via the conductive adhesive member (60). And sealed with the mold resin (50),
The power element (30) on the one surface side of the second substrate (20) and the power element (30) on the other surface side are provided at the same position. 3. The electronic device according to 2.
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JP4385324B2 (en) * 2004-06-24 2009-12-16 富士電機システムズ株式会社 Semiconductor module and manufacturing method thereof
JP5241177B2 (en) * 2007-09-05 2013-07-17 株式会社オクテック Semiconductor device and manufacturing method of semiconductor device

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