JP2014531387A - 支持基板を使用した薄型ガラス製法 - Google Patents
支持基板を使用した薄型ガラス製法 Download PDFInfo
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- JP2014531387A JP2014531387A JP2014528707A JP2014528707A JP2014531387A JP 2014531387 A JP2014531387 A JP 2014531387A JP 2014528707 A JP2014528707 A JP 2014528707A JP 2014528707 A JP2014528707 A JP 2014528707A JP 2014531387 A JP2014531387 A JP 2014531387A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
Abstract
Description
Claims (25)
- 支持基板を使用して、薄型基板からディスプレイパネルを製造する方法であって、
前記薄型基板の第1表面上に接着剤を堆積させる工程と、
前記支持基板の第2表面上に接着剤を堆積させる工程と、
前記第1表面及び前記第2表面上に堆積された前記接着剤で、前記薄型基板及び前記支持基板を接着する工程と、
前記薄型基板の前記第1表面とは反対側の第3表面に、薄膜プロセスを実施する工程と、
前記プロセスを実施した薄型基板を前記支持基板から分離する工程と、を含み、
前記薄型基板は、薄膜プロセスに耐えるのに必要な厚さよりも薄い厚さを有しながら、前記接着された薄型基板と前記支持基板の厚さは、前記必要な厚さ以上である、方法。 - 前記薄型基板がガラスである、請求項1に記載の方法。
- 前記支持基板がガラスである、請求項1に記載の方法。
- 前記接着剤が、SiO2、エポキシ、シリコーン接着剤、ガラスフリット接合、メタライゼーション(例えば、はんだ)、アクリル、ウレタン、合成ゴム、及びエラストマーのうちの1つである、請求項1に記載の方法。
- 前記薄型基板及び前記支持基板を接着する工程が、
前記薄型基板の前記第1表面上の一領域を酸化する工程と、
前記支持基板の前記第2表面上の一領域を酸化する工程と、
前記薄型基板の前記第1表面の前記酸化領域と前記支持基板の前記第2表面の前記酸化領域との間に、アニーリングによって酸化層を形成する工程と、を更に含む、請求項4に記載の方法。 - 前記接着剤が、前記第1表面の縁領域に沿って連続的パターンで堆積される、請求項1に記載の方法。
- 前記薄型基板と前記支持基板との間の接着が、前記薄型基板と前記支持基板との間の空間を密封する密封部を形成する、請求項6に記載の方法。
- 前記空間が真空である、請求項7に記載の方法。
- 前記接着剤が、前記第1表面上にセグメント化されたパターンで堆積される、請求項1に記載の方法。
- 前記薄型基板の第3表面に、薄膜プロセスを実施する工程が、TFTプロセスを実施する工程を更に含む、請求項1に記載の方法。
- 前記プロセスを実施した薄型基板を前記支持基板から分離する工程が、
前記薄型基板の前記第3表面上に複数のスクライブ線を配置する工程と、
前記複数のスクライブ線に沿って切断し、前記薄型基板の一部分を前記支持基板から分離する工程と、を更に含む、請求項1に記載の方法。 - 前記複数のスクライブ線が、前記ディスプレイパネルの外側境界を画定する、請求項11に記載の方法。
- 前記複数のスクライブ線が、長方形を形成する4本のスクライブ線を含む、請求項11に記載の方法。
- 前記分離された、プロセスを実施した薄型基板を複数のディスプレイパネルに分割する工程を更に含む、請求項1に記載の方法。
- 前記プロセスを実施した薄型基板を支持基板から分離する工程が、前記薄型基板と前記支持基板との間の接着を化学エッチングする工程を含む、請求項1に記載の方法。
- 前記必要な厚さが0.5mmである、請求項1に記載の方法。
- 薄型ガラスシートからディスプレイパネルを製造する方法であって、
前記薄型ガラスシートの第1表面上の一領域を酸化する工程と、
支持基板を提供する工程と、
前記支持基板の第2表面上の一領域を酸化する工程と、
前記薄型ガラスシート及び前記支持基板を前記酸化された領域において、アニーリングによって接着する工程と、
前記第1表面とは反対側の前記薄型ガラスシートの第3表面に、薄膜プロセスを実施する工程と、
前記薄型ガラスシートの前記第3表面に配置された複数のスクライブ線に沿って切断することによって、前記プロセスを実施した薄型ガラスシートを前記支持基板から分離する工程と、を含む、方法。 - 前記支持基板がガラス基板である、請求項17に記載の方法。
- 前記薄型ガラスシートが、薄膜プロセスに耐えるのに必要な厚さよりも薄い厚さを有しながら、前記接着された薄型ガラスシートと前記支持基板の厚さは、前記必要な厚さ以上である、請求項17に記載の方法。
- 前記薄型ガラスシートの前記第1表面上の前記一領域を酸化する工程が、前記第1表面上に接着剤を堆積させる工程を更に含む、請求項17に記載の方法。
- 前記接着剤が、SiO2、エポキシ、シリコーン接着剤、ガラスフリット接合、メタライゼーション(例えば、はんだ)、アクリル、ウレタン、合成ゴム、及びエラストマーのうちの1つである、請求項20に記載の方法。
- 前記支持基板の前記第2表面の前記一領域を酸化する工程が、前記第2表面上に接着剤を堆積させる工程を更に含む、請求項17に記載の方法。
- 前記接着剤が、SiO2、エポキシ、シリコーン接着剤、ガラスフリット接合、メタライゼーション(例えば、はんだ)、アクリル、ウレタン、合成ゴム、及びエラストマーのうち1つである、請求項22に記載の方法。
- 前記複数のスクライブ線に沿って切断することが、ウォータージェット切断によって行われる、請求項17に記載の方法。
- 前記複数のスクライブ線に沿って切断することが、レーザスクライビングによって行われる、請求項17に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US13/234,072 US9063605B2 (en) | 2009-01-09 | 2011-09-15 | Thin glass processing using a carrier |
US13/234,072 | 2011-09-15 | ||
PCT/US2012/054886 WO2013040051A1 (en) | 2011-09-15 | 2012-09-12 | Thin glass processing using a carrier substrate |
Publications (2)
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JP2014531387A true JP2014531387A (ja) | 2014-11-27 |
JP5828496B2 JP5828496B2 (ja) | 2015-12-09 |
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JP2014528707A Active JP5828496B2 (ja) | 2011-09-15 | 2012-09-12 | 支持基板を使用した薄型ガラス製法 |
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US (1) | US9063605B2 (ja) |
JP (1) | JP5828496B2 (ja) |
WO (1) | WO2013040051A1 (ja) |
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US20120009703A1 (en) | 2012-01-12 |
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