JP2014529189A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000002070 nanowire Substances 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000001015 X-ray lithography Methods 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 3
- 238000002164 ion-beam lithography Methods 0.000 claims description 3
- 238000001127 nanoimprint lithography Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000012535 impurity Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021387 carbon allotrope Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
図5Aは、本発明の一実施形態によるナノワイヤを基盤とする太陽電池においてナノワイヤの側壁が水平面となす角(起立角)を示す図である。
Claims (15)
- 一面に裏面電極が位置する基板と、
前記基板の裏面上において、前記基板に対して垂直方向に離隔配置された複数のナノワイヤを含むp型半導体層と、
前記複数のナノワイヤの表面に沿って前記p型半導体層上に位置するn型半導体層と、
前記n型半導体層上に位置する前面電極と、
前記n型半導体層を覆うように形成され、前記複数のナノワイヤとの間を充填する絶縁膜と、を含み、
前記複数のナノワイヤのそれぞれは、傾斜している側壁を有することを特徴とする太陽電池。 - 前記複数のナノワイヤのそれぞれは、上部から下部へ行くにつれ直径が減少する逆円錐型または逆円錐台型構造を有することを特徴とする、請求項1に記載の太陽電池。
- 前記複数のナノワイヤのそれぞれは、上部から下部へ行くにつれ直径が減少する逆円錐型または逆円錐台型構造と、上部から下部へ行くにつれ直径が増加する円錐型または円錐台型構造とを結合した砂時計型またはダイヤモンド型構造を有することを特徴とする、請求項1に記載の太陽電池。
- 前記複数のナノワイヤのそれぞれの側壁が水平面となす角度は15゜〜90゜であることを特徴とする、請求項1に記載の太陽電池。
- 前記複数のナノワイヤのそれぞれの間隔は15nm〜10μmであることを特徴とする、請求項1に記載の太陽電池。
- 前記n型半導体層上に位置する透明電極層をさらに含むことを特徴とする、請求項1に記載の太陽電池。
- 前記基板と前記p型半導体層は一体に形成されていることを特徴とする、請求項1に記載の太陽電池。
- 前記基板と前記p型半導体層はp型シリコンを含むことを特徴とする、請求項1に記載の太陽電池。
- 基板を提供する段階と、
前記基板上に傾斜している側壁を有する複数のナノワイヤを含むp型半導体層を形成する段階と、
前記複数のナノワイヤの表面に沿って前記p型半導体層上にn型半導体層を形成する段階と、
前記n型半導体層上に前面電極を形成し、前記基板の裏面に裏面電極を形成する段階と、
前記n型半導体層上に、前記複数のナノワイヤとの間の空間を充填する絶縁膜を形成する段階を含むことを特徴とする太陽電池の製造方法。 - 前記複数のナノワイヤのそれぞれは、上部から下部へ行くにつれ直径が減少する逆円錐型または逆円錐台型構造を有するように形成されていることを特徴とする、請求項9に記載の太陽電池の製造方法。
- 前記p型半導体層は、前記基板をエッチングし、前記基板と一体に形成されることを特徴とする、請求項9に記載の太陽電池の製造方法。
- 前記基板を非等方性エッチングし、傾斜された側壁を有する複数のナノワイヤを含むp型半導体層を形成することを特徴とする、請求項11に記載の太陽電池の製造方法。
- 前記p型半導体層は、
前記基板の上部にナノワイヤパターンを形成する段階と、
前記ナノワイヤパターンの上部にハードマスクを形成し、前記ナノワイヤパターンに沿って前記基板をエッチングする段階と、を経て形成されることを特徴とする、請求項9に記載の太陽電池の製造方法。 - 前記基板の上部にナノワイヤパターンを形成する段階は、電子ビームリソグラフィ、イオンビームリソグラフィ、X線リソグラフィ、極紫外線リソグラフィ、フォトリソグラフィ及びナノインプリントリソグラフィから選択されるいずれか1つで行われることを特徴とする、請求項13に記載の太陽電池の製造方法。
- 前記複数のナノワイヤの表面に沿って前記p型半導体層上に前記n型半導体層を形成する段階以後に、前記n型半導体層上に透明電極層を形成する段階をさらに含むことを特徴とする、請求項9に記載の太陽電池の製造方法。
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KR1020110083105A KR101316375B1 (ko) | 2011-08-19 | 2011-08-19 | 태양전지 및 이의 제조방법 |
KR10-2011-0083105 | 2011-08-19 | ||
PCT/KR2012/006563 WO2013027975A1 (ko) | 2011-08-19 | 2012-08-17 | 태양전지 및 이의 제조방법 |
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JP2014529189A true JP2014529189A (ja) | 2014-10-30 |
JP5820075B2 JP5820075B2 (ja) | 2015-11-24 |
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US (1) | US9559230B2 (ja) |
EP (1) | EP2747152A4 (ja) |
JP (1) | JP5820075B2 (ja) |
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KR101327744B1 (ko) * | 2012-06-22 | 2013-11-11 | 원광대학교산학협력단 | 고효율의 태양전지 제조방법 |
WO2014165228A1 (en) * | 2013-03-12 | 2014-10-09 | The Regents Of The University Of California | Highly efficient optical to electrical conversion devices |
US11637216B2 (en) | 2013-03-12 | 2023-04-25 | The Regents Of The University Of California | Highly efficient optical to electrical conversion devices and MElHODS |
EP3033774A1 (en) * | 2013-08-18 | 2016-06-22 | Ramot at Tel-Aviv University Ltd. | Photovoltaic cell and method of fabricating the same |
KR101506962B1 (ko) * | 2014-06-02 | 2015-03-30 | 인천대학교 산학협력단 | 고효율 광전소자 및 그 제조방법 |
JP6321487B2 (ja) * | 2014-08-11 | 2018-05-09 | 京セラ株式会社 | 量子ドット太陽電池 |
JP6321504B2 (ja) * | 2014-09-19 | 2018-05-09 | 京セラ株式会社 | 量子ドット太陽電池 |
KR101731497B1 (ko) | 2015-06-11 | 2017-04-28 | 한국과학기술연구원 | 반도체 기판의 텍스쳐링 방법, 이 방법에 의해 제조된 반도체 기판 및 이를 포함하는 태양전지 |
KR101995614B1 (ko) * | 2015-09-08 | 2019-07-02 | 포항공과대학교 산학협력단 | 비대칭 수직 나노선 어레이를 이용한 열전소자 및 이의 제조방법 |
CN107564980B (zh) * | 2016-07-01 | 2020-03-31 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
KR101919487B1 (ko) | 2017-09-14 | 2018-11-19 | 한국과학기술연구원 | 반도체 기판을 텍스쳐링하는 방법과, 이 방법에 의해 제조된 반도체 기판, 그리고, 이러한 반도체 기판을 포함하는 태양 전지 |
KR102100385B1 (ko) * | 2017-11-16 | 2020-04-13 | 포항공과대학교 산학협력단 | 실리사이드층을 포함하는 수직 나노선을 이용한 열전소자 및 이의 제조 방법 |
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JP5820075B2 (ja) | 2015-11-24 |
EP2747152A4 (en) | 2015-05-20 |
KR101316375B1 (ko) | 2013-10-08 |
US20140326305A1 (en) | 2014-11-06 |
WO2013027975A1 (ko) | 2013-02-28 |
US9559230B2 (en) | 2017-01-31 |
EP2747152A1 (en) | 2014-06-25 |
KR20130020458A (ko) | 2013-02-27 |
CN103875080A (zh) | 2014-06-18 |
CN103875080B (zh) | 2017-03-01 |
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