JP2014526122A5 - - Google Patents

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Publication number
JP2014526122A5
JP2014526122A5 JP2014522202A JP2014522202A JP2014526122A5 JP 2014526122 A5 JP2014526122 A5 JP 2014526122A5 JP 2014522202 A JP2014522202 A JP 2014522202A JP 2014522202 A JP2014522202 A JP 2014522202A JP 2014526122 A5 JP2014526122 A5 JP 2014526122A5
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JP
Japan
Prior art keywords
layer
organic transistor
semiconductor
electroluminescent organic
type
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JP2014522202A
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English (en)
Japanese (ja)
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JP5878632B2 (ja
JP2014526122A (ja
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Priority claimed from IT001447A external-priority patent/ITMI20111447A1/it
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Publication of JP2014526122A publication Critical patent/JP2014526122A/ja
Publication of JP2014526122A5 publication Critical patent/JP2014526122A5/ja
Application granted granted Critical
Publication of JP5878632B2 publication Critical patent/JP5878632B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014522202A 2011-07-29 2012-07-26 電界発光有機トランジスタ Expired - Fee Related JP5878632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ITMI2011A001447 2011-07-29
IT001447A ITMI20111447A1 (it) 2011-07-29 2011-07-29 Transistor organico elettroluminescente
PCT/IB2012/053815 WO2013018000A1 (en) 2011-07-29 2012-07-26 Electroluminescent organic transistor

Publications (3)

Publication Number Publication Date
JP2014526122A JP2014526122A (ja) 2014-10-02
JP2014526122A5 true JP2014526122A5 (https=) 2015-08-06
JP5878632B2 JP5878632B2 (ja) 2016-03-08

Family

ID=44584356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014522202A Expired - Fee Related JP5878632B2 (ja) 2011-07-29 2012-07-26 電界発光有機トランジスタ

Country Status (7)

Country Link
US (1) US8772765B2 (https=)
EP (1) EP2583329B1 (https=)
JP (1) JP5878632B2 (https=)
KR (1) KR101595341B1 (https=)
CN (1) CN103718326B (https=)
IT (1) ITMI20111447A1 (https=)
WO (1) WO2013018000A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2960280A1 (en) 2014-06-26 2015-12-30 E.T.C. S.r.l. Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices
EP2978035A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978037A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978038A1 (en) 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
CN111146352B (zh) 2014-07-24 2022-10-21 飞利斯有限公司 有机电致发光晶体管
EP3021373A1 (en) 2014-11-14 2016-05-18 E.T.C. S.r.l. Display containing improved pixel architectures
WO2016100983A1 (en) 2014-12-19 2016-06-23 Polyera Corporation Photocrosslinkable compositions, patterned high k thin film dielectrics and related devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
JP2003100457A (ja) 2001-09-21 2003-04-04 Seiko Epson Corp 発光装置
EP1367659B1 (en) * 2002-05-21 2012-09-05 Semiconductor Energy Laboratory Co., Ltd. Organic field effect transistor
JP4334907B2 (ja) * 2002-05-21 2009-09-30 株式会社半導体エネルギー研究所 有機電界効果トランジスタ
KR100611148B1 (ko) * 2003-11-25 2006-08-09 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 사용하는 유기전계발광소자
DE602004006441T2 (de) 2003-12-22 2008-05-15 Koninklijke Philips Electronics N.V. Nichtflüchtiger ferroelektrischer dünnfilm-baustein mit einem organischen ambipolaren halbleiter und verfahren zum verarbeiten eines solchen bausteins
JP4530334B2 (ja) 2004-01-21 2010-08-25 国立大学法人京都大学 有機半導体装置、ならびにそれを用いた表示装置および撮像装置
US7494722B2 (en) * 2005-02-23 2009-02-24 Eastman Kodak Company Tandem OLED having an organic intermediate connector
US7799439B2 (en) * 2006-01-25 2010-09-21 Global Oled Technology Llc Fluorocarbon electrode modification layer
US8026512B2 (en) 2006-11-16 2011-09-27 Panasonic Corporation Mobility engineered electroluminescent devices
KR101591101B1 (ko) * 2007-03-07 2016-02-03 유니버시티 오브 켄터키 리서치 파운데이션 실릴에티닐화 헤테로아센 및 이로 제조된 전자 장치
JP5403518B2 (ja) 2008-02-08 2014-01-29 国立大学法人京都工芸繊維大学 発光デバイスの駆動方法及び駆動装置
JP2009218529A (ja) * 2008-03-13 2009-09-24 Kyocera Corp 発光素子及びその製造方法
JP5452475B2 (ja) * 2008-04-10 2014-03-26 出光興産株式会社 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ
JP5135073B2 (ja) * 2008-06-18 2013-01-30 出光興産株式会社 有機薄膜トランジスタ
EP2340576A2 (en) 2008-10-29 2011-07-06 Koninklijke Philips Electronics N.V. Dual gate field-effect transistor and method of producing a dual gate field-effect transistor
KR100975913B1 (ko) * 2008-10-31 2010-08-13 한국전자통신연구원 유기 박막 트랜지스터용 조성물, 이를 이용하여 형성된 유기 박막 트랜지스터 및 그 형성방법
JP5447794B2 (ja) 2009-05-08 2014-03-19 セイコーエプソン株式会社 発光装置

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