JP2014521213A - 静電チャックアセンブリ - Google Patents
静電チャックアセンブリ Download PDFInfo
- Publication number
- JP2014521213A JP2014521213A JP2014519127A JP2014519127A JP2014521213A JP 2014521213 A JP2014521213 A JP 2014521213A JP 2014519127 A JP2014519127 A JP 2014519127A JP 2014519127 A JP2014519127 A JP 2014519127A JP 2014521213 A JP2014521213 A JP 2014521213A
- Authority
- JP
- Japan
- Prior art keywords
- pack
- base
- electrostatic chuck
- support
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Abstract
【選択図】 図2
Description
Claims (15)
- 基板を支持するためのパックであって、誘電材料から形成され、パック上に配置されるときに前記基板を静電気的に保持するためにパックの支持表面近傍のパック内に配置されたチャッキング電極を有するパックと、
前記パックを支持するために基部から延在するリングを有する基部と、
前記パックと前記基部との間に間隙が形成されるように前記基部の上に前記パックを支持するために前記基部と前記パックとの間に配置されたスペーサであって、前記パックの周辺エッジ近傍で前記パックを支持するスペーサと、
を備える静電チャック。 - 前記スペーサがチタンから製造される、請求項1に記載の静電チャック。
- 前記スペーサが、約0.10〜約0.11mmの幅を有するパック支持表面を有する、請求項1に記載の静電チャック。
- 前記間隙が約1.25〜約1.50cmの高さを有する、請求項1に記載の静電チャック。
- 前記パック内に埋め込まれたヒータ
をさらに備える、請求項1ないし4のいずれか一項に記載の静電チャック。 - 前記ヒータが、複数の独立して制御可能な加熱ゾーンを備える、請求項5に記載の静電チャック。
- 前記パックの外周エッジの上に配置され、前記パックを前記基部に固定するために前記基部の前記リングに結合されたクランプリング
をさらに備える、請求項1ないし4のいずれか一項に記載の静電チャック。 - 前記クランプリングがチタンから製造される、請求項7に記載の静電チャック。
- 前記クランプリングを前記基部に結合するための締め具をさらに備え、前記締め具は、前記クランプリングが前記基部から離間された状態を維持する、
請求項7に記載の静電チャック。 - 前記基部および前記リングが、アルミニウムまたはステンレス鋼から製造される、請求項1ないし4のいずれか一項に記載の静電チャック。
- 前記基部および前記リングが、単一のアルミニウムまたはステンレス鋼片から製造される、請求項1ないし4のいずれか一項に記載の静電チャック。
- 前記基部を支持するために前記基部に結合された管と、
前記パックへ処理資源を送るために前記管内に配置された導管と
をさらに備える、請求項1ないし4のいずれか一項に記載の静電チャック。 - 前記基部を通る冷却剤の流れを可能にするために前記基部内に配置された1つまたは複数の導管
をさらに備える、請求項1ないし4のいずれか一項に記載の静電チャック。 - 前記スペーサが、前記パックと前記リングとの間に配置される、請求項1ないし4のいずれか一項に記載の静電チャック。
- 前記パックが前記リングに直接接触しないように、前記スペーサが、前記パックと前記リングとの間に配置される、請求項1ないし4のいずれか一項に記載の静電チャック。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161504000P | 2011-07-01 | 2011-07-01 | |
US61/504,000 | 2011-07-01 | ||
US13/536,098 US9117867B2 (en) | 2011-07-01 | 2012-06-28 | Electrostatic chuck assembly |
US13/536,098 | 2012-06-28 | ||
PCT/US2012/044838 WO2013006407A1 (en) | 2011-07-01 | 2012-06-29 | Electrostatic chuck assembly |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017149233A Division JP2017216475A (ja) | 2011-07-01 | 2017-08-01 | 静電チャックアセンブリ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014521213A true JP2014521213A (ja) | 2014-08-25 |
JP2014521213A5 JP2014521213A5 (ja) | 2015-07-23 |
JP6223333B2 JP6223333B2 (ja) | 2017-11-01 |
Family
ID=47389823
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014519127A Active JP6223333B2 (ja) | 2011-07-01 | 2012-06-29 | 静電チャックアセンブリ |
JP2017149233A Pending JP2017216475A (ja) | 2011-07-01 | 2017-08-01 | 静電チャックアセンブリ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017149233A Pending JP2017216475A (ja) | 2011-07-01 | 2017-08-01 | 静電チャックアセンブリ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9117867B2 (ja) |
JP (2) | JP6223333B2 (ja) |
KR (1) | KR102025908B1 (ja) |
CN (1) | CN103650127B (ja) |
WO (1) | WO2013006407A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013232642A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2018506853A (ja) * | 2015-02-03 | 2018-03-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ処理システム用の高温チャック |
Families Citing this family (120)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9117867B2 (en) * | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
JP2014093420A (ja) * | 2012-11-02 | 2014-05-19 | Toyota Motor Corp | ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法 |
JP6017328B2 (ja) * | 2013-01-22 | 2016-10-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US10808317B2 (en) | 2013-07-03 | 2020-10-20 | Lam Research Corporation | Deposition apparatus including an isothermal processing zone |
JP6075555B2 (ja) * | 2013-07-05 | 2017-02-08 | 日新イオン機器株式会社 | 静電チャックシステムおよび半導体製造装置 |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
WO2015013142A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An electrostatic chuck for high temperature process applications |
WO2015013143A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An end effector for transferring a substrate |
KR101905158B1 (ko) | 2013-08-06 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 국부적으로 가열되는 다-구역 기판 지지부 |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10252397B2 (en) | 2014-10-30 | 2019-04-09 | Applied Materials, Inc. | Methods and apparatus for profile and surface preparation of retaining rings utilized in chemical mechanical polishing processes |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US20160225652A1 (en) * | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US10186444B2 (en) * | 2015-03-20 | 2019-01-22 | Applied Materials, Inc. | Gas flow for condensation reduction with a substrate processing chuck |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10777442B2 (en) * | 2016-11-18 | 2020-09-15 | Applied Materials, Inc. | Hybrid substrate carrier |
US10784139B2 (en) * | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
JP6960737B2 (ja) * | 2017-01-23 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置 |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10147610B1 (en) * | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US11289355B2 (en) | 2017-06-02 | 2022-03-29 | Lam Research Corporation | Electrostatic chuck for use in semiconductor processing |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US11004722B2 (en) | 2017-07-20 | 2021-05-11 | Applied Materials, Inc. | Lift pin assembly |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
CN107808848A (zh) * | 2017-11-28 | 2018-03-16 | 北京北方华创微电子装备有限公司 | 静电卡盘以及半导体设备 |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
CN111448647B (zh) * | 2018-03-26 | 2023-08-01 | 日本碍子株式会社 | 静电卡盘加热器 |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US11424096B2 (en) * | 2019-11-05 | 2022-08-23 | Applied Materials, Inc. | Temperature controlled secondary electrode for ion control at substrate edge |
US20210343512A1 (en) * | 2020-04-30 | 2021-11-04 | Applied Materials, Inc. | Cooled substrate support assembly for radio frequency environments |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001250816A (ja) * | 1999-12-22 | 2001-09-14 | Lam Res Corp | 高温静電チャック |
JP2005516379A (ja) * | 2001-06-28 | 2005-06-02 | ラム リサーチ コーポレーション | 高温静電チャック |
JP2009021592A (ja) * | 2007-07-13 | 2009-01-29 | Applied Materials Inc | プラズマエッチング用高温カソード |
JP2009054932A (ja) * | 2007-08-29 | 2009-03-12 | Shinko Electric Ind Co Ltd | 静電チャック |
JP2010199107A (ja) * | 2009-02-23 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置の基板支持台 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01200625A (ja) * | 1988-02-05 | 1989-08-11 | Toshiba Corp | 半導体ウェーハ処理装置 |
JP3297771B2 (ja) * | 1993-11-05 | 2002-07-02 | ソニー株式会社 | 半導体製造装置 |
US5781400A (en) * | 1995-09-20 | 1998-07-14 | Hitachi, Ltd. | Electrostatically attracting electrode and a method of manufacture thereof |
US6138745A (en) * | 1997-09-26 | 2000-10-31 | Cvc Products, Inc. | Two-stage sealing system for thermally conductive chuck |
US6623605B2 (en) * | 2001-12-06 | 2003-09-23 | Applied Materials, Inc. | Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck |
JP4386360B2 (ja) * | 2004-12-06 | 2009-12-16 | 信越化学工業株式会社 | 静電チャック |
US20100018648A1 (en) | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
US8194384B2 (en) * | 2008-07-23 | 2012-06-05 | Tokyo Electron Limited | High temperature electrostatic chuck and method of using |
US8481433B2 (en) | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
JP5745519B2 (ja) * | 2009-08-31 | 2015-07-08 | ラム リサーチ コーポレーションLam Research Corporation | 高周波(rf)接地帰還構成 |
US9117867B2 (en) * | 2011-07-01 | 2015-08-25 | Applied Materials, Inc. | Electrostatic chuck assembly |
-
2012
- 2012-06-28 US US13/536,098 patent/US9117867B2/en active Active
- 2012-06-29 WO PCT/US2012/044838 patent/WO2013006407A1/en active Application Filing
- 2012-06-29 KR KR1020147002507A patent/KR102025908B1/ko active IP Right Grant
- 2012-06-29 JP JP2014519127A patent/JP6223333B2/ja active Active
- 2012-06-29 CN CN201280034367.4A patent/CN103650127B/zh active Active
-
2017
- 2017-08-01 JP JP2017149233A patent/JP2017216475A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001250816A (ja) * | 1999-12-22 | 2001-09-14 | Lam Res Corp | 高温静電チャック |
JP2005516379A (ja) * | 2001-06-28 | 2005-06-02 | ラム リサーチ コーポレーション | 高温静電チャック |
JP2009021592A (ja) * | 2007-07-13 | 2009-01-29 | Applied Materials Inc | プラズマエッチング用高温カソード |
JP2009054932A (ja) * | 2007-08-29 | 2009-03-12 | Shinko Electric Ind Co Ltd | 静電チャック |
JP2010199107A (ja) * | 2009-02-23 | 2010-09-09 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置の基板支持台 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013232642A (ja) * | 2012-04-27 | 2013-11-14 | Ngk Insulators Ltd | 半導体製造装置用部材 |
JP2018506853A (ja) * | 2015-02-03 | 2018-03-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | プラズマ処理システム用の高温チャック |
Also Published As
Publication number | Publication date |
---|---|
US20130001899A1 (en) | 2013-01-03 |
CN103650127B (zh) | 2017-12-19 |
JP2017216475A (ja) | 2017-12-07 |
KR20140045999A (ko) | 2014-04-17 |
CN103650127A (zh) | 2014-03-19 |
KR102025908B1 (ko) | 2019-09-26 |
WO2013006407A1 (en) | 2013-01-10 |
US9117867B2 (en) | 2015-08-25 |
JP6223333B2 (ja) | 2017-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6223333B2 (ja) | 静電チャックアセンブリ | |
US11282734B2 (en) | Electrostatic chuck and method for manufacturing the same | |
US20180190501A1 (en) | Plasma processing apparatus | |
KR102383357B1 (ko) | 배치대 및 기판 처리 장치 | |
TWI651798B (zh) | 載置台及電漿處理裝置 | |
US9948214B2 (en) | High temperature electrostatic chuck with real-time heat zone regulating capability | |
US11289356B2 (en) | Stage and plasma processing apparatus | |
JP6143766B2 (ja) | チャンバ壁温度制御を備えたプラズマリアクタ | |
TWI676234B (zh) | 具有凸起的頂板及冷卻通道的靜電夾盤 | |
US20040226515A1 (en) | Heat transfer assembly | |
KR20110041499A (ko) | 고온의 정전식 척 | |
US20150243487A1 (en) | Compression member for use in showerhead electrode assembly | |
US20090283976A1 (en) | Substrate holding apparatus | |
JP2012015514A (ja) | プラズマ処理チャンバ用の可動接地リング | |
KR20060129279A (ko) | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리 | |
JPH10223621A (ja) | 真空処理装置 | |
JP7402255B2 (ja) | 高温用途のための着脱可能なバイアス可能な静電チャック | |
CN113169111A (zh) | 具有改良的热耦合以用于热敏感处理的静电吸盘 | |
US20120325796A1 (en) | Semiconductor manufacturing apparatus | |
TWI811634B (zh) | 高溫微區域靜電吸盤 | |
US11393664B2 (en) | Substrate placing table, plasma processing apparatus provided with same, and plasma processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150602 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150604 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160614 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160815 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170207 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170801 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20170809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171003 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6223333 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |