JP2014510694A - 単結晶または多結晶構造を有する材料の生成方法及び装置 - Google Patents
単結晶または多結晶構造を有する材料の生成方法及び装置 Download PDFInfo
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- JP2014510694A JP2014510694A JP2014504231A JP2014504231A JP2014510694A JP 2014510694 A JP2014510694 A JP 2014510694A JP 2014504231 A JP2014504231 A JP 2014504231A JP 2014504231 A JP2014504231 A JP 2014504231A JP 2014510694 A JP2014510694 A JP 2014510694A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【選択図】 図1
Description
Pdiff=Pstat−Pdyn
Pstat−h*psilicon *g
Pdyn=v*8*η*h/R2
再溶解作業を開始するにはまず、プラントを空にして、その後プラントに不活性ガスを大量に送り込む。所定の質量流量の設定は、下側制御弁26を通じて行われる。過圧範囲内での所望の圧力範囲の設定は、上側圧力領域で圧力制御弁38を通じて行われる。差圧調整弁62は、この場合、閉位置にある。
Pstat =h*psilicon *g
再溶解作業を開始するにはまず、プラントを空にして、その後プラントに不活性ガスを大量に送り込む。所定の質量流量の設定は、下側制御弁26を通じて行われる。過圧範囲内での所望の圧力範囲の設定は、上側圧力領域で制御弁36を通じて行われる。差圧調整弁62は、この場合、閉位置にある。
Claims (10)
- 単結晶または多結晶構造を有する材料を生成する方法において、
a)微粒子材料混合物を容器の入口に導入するステップと、
b)前記材料混合物を前記容器の溶融帯域内で加熱するステップと、
を含み、
前記溶融帯域内の前記材料混合物が前記容器の前記入口と出口の間の圧力差を通じて静的に支持されることを特徴とする方法。 - 前記静的な支持が、前記容器によって分離される2つのチャンバー間で行われ、それらの間には圧力差が存在する、請求項1に記載の方法。
- ステップb)の後に、
c)前記材料混合物、好ましくは前記溶融帯域内の前記材料混合物を、種結晶、好ましくは接種用結晶と、前記容器の前記出口において、またはその付近で接触させるステップ
を更に含む、請求項1または2に記載の方法。 - ステップc)の後に、
d)単結晶半導体シリコンロッドを形成するために、前記接種用結晶を前記溶融帯域から引き出すステップ
を更に含む、請求項3に記載の方法。 - 単結晶または多結晶構造を有する材料を生成する装置において、
そこから微粒子材料混合物を導入できる入口を有する容器と、
それによって前記材料混合物を前記容器の溶融帯域内で加熱できる加熱装置と、
前記容器の前記入口と前記出口の間に圧力差を発生させる圧力生成装置であって、この圧力差を通じて前記溶融帯域内の前記材料混合物を静的に支持できることになるような圧力生成装置と、
を備える装置。 - 前記容器によって分離される2つのチャンバーを備え、それらの間に圧力差が生じる、請求項5に記載の装置。
- 差圧調整装置を備え、それを通じて前記2つのチャンバー間の差圧を制御または調整でき、好ましくは、前記2つのチャンバーを接続する差圧制御装置を備え、それを通じて前記2つのチャンバー間の差圧を制御または調整できる、請求項4または6に記載の装置。
- 種結晶を備え、それを通じて前記材料混合物、好ましくは前記溶融帯域内の前記材料混合物を、前記容器の出口において、またはその付近で接触させることができ、またそれを通じて前記半導体材料を前記溶融帯域から引き出すことができる、請求項5〜7の何れか1項に記載の装置。
- 前記材料が半導体材料、接続型半導体及び/または金属合金である、請求項5〜8の何れか1項に記載の装置。
- 前記容器内の前記材料の量の前記測定が、前記容器内の前記材料の前記直径の測定を通じて行われる、請求項5〜9の何れか1項に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011007149A DE102011007149A1 (de) | 2011-04-11 | 2011-04-11 | Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur |
DE102011007149.0 | 2011-04-11 | ||
PCT/EP2012/054963 WO2012139865A1 (de) | 2011-04-11 | 2012-03-21 | Verfahren und vorrichtung zur herstellung von material mit mono- oder multikristalliner struktur |
Publications (2)
Publication Number | Publication Date |
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JP2014510694A true JP2014510694A (ja) | 2014-05-01 |
JP5683744B2 JP5683744B2 (ja) | 2015-03-11 |
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JP2014504231A Expired - Fee Related JP5683744B2 (ja) | 2011-04-11 | 2012-03-21 | 単結晶または多結晶構造を有する材料の生成方法及び装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8956454B2 (ja) |
EP (1) | EP2697413B1 (ja) |
JP (1) | JP5683744B2 (ja) |
KR (1) | KR101478274B1 (ja) |
CN (1) | CN103649381B (ja) |
DE (1) | DE102011007149A1 (ja) |
DK (1) | DK2697413T3 (ja) |
TW (1) | TWI541391B (ja) |
WO (1) | WO2012139865A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62246894A (ja) * | 1986-04-15 | 1987-10-28 | Kyushu Denshi Kinzoku Kk | 単結晶の製造方法及びその装置 |
JPH06199589A (ja) * | 1991-05-20 | 1994-07-19 | Hemlock Semiconductor Corp | 微粒ケイ素の浮融帯法 |
JPH0769775A (ja) * | 1993-07-15 | 1995-03-14 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | 粒状物質から製造された融解物の結晶化により凝固時に膨張する半導体材料からの棒またはインゴットの製造方法ならびにその実施装置 |
JP2008503427A (ja) * | 2004-06-18 | 2008-02-07 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ |
Family Cites Families (10)
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DE1204837B (de) * | 1961-08-21 | 1965-11-11 | Merck & Co Inc | Verfahren zur kontinuierlichen Herstellung von Staeben aus thermoelektrischen Werkstoffen |
FR1387497A (fr) * | 1964-02-19 | 1965-01-29 | Merck & Co Inc | Appareil et procédé de coulée continue d'une matière thermoélectrique |
DE2508369A1 (de) * | 1975-02-26 | 1976-09-02 | Siemens Ag | Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen |
US4216186A (en) * | 1978-08-31 | 1980-08-05 | Nasa | Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains |
JPS56109893A (en) * | 1980-01-30 | 1981-08-31 | Kokusai Denshin Denwa Co Ltd <Kdd> | Single crystal manufacturing apparatus |
US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
US5690734A (en) * | 1995-03-22 | 1997-11-25 | Ngk Insulators, Ltd. | Single crystal growing method |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
RU2215070C2 (ru) * | 1998-05-29 | 2003-10-27 | Тойо Коммьюникейшн Эквипмент Ко., Лтд. | Устройство для получения монокристалла (варианты), способ получения монокристалла (варианты) и монокристалл (варианты) |
-
2011
- 2011-04-11 DE DE102011007149A patent/DE102011007149A1/de not_active Withdrawn
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2012
- 2012-03-21 DK DK12713636.4T patent/DK2697413T3/en active
- 2012-03-21 JP JP2014504231A patent/JP5683744B2/ja not_active Expired - Fee Related
- 2012-03-21 KR KR1020137028589A patent/KR101478274B1/ko not_active IP Right Cessation
- 2012-03-21 CN CN201280028686.4A patent/CN103649381B/zh not_active Expired - Fee Related
- 2012-03-21 EP EP12713636.4A patent/EP2697413B1/de not_active Not-in-force
- 2012-03-21 US US14/110,478 patent/US8956454B2/en not_active Expired - Fee Related
- 2012-03-21 WO PCT/EP2012/054963 patent/WO2012139865A1/de active Application Filing
- 2012-04-11 TW TW101112880A patent/TWI541391B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62246894A (ja) * | 1986-04-15 | 1987-10-28 | Kyushu Denshi Kinzoku Kk | 単結晶の製造方法及びその装置 |
JPH06199589A (ja) * | 1991-05-20 | 1994-07-19 | Hemlock Semiconductor Corp | 微粒ケイ素の浮融帯法 |
JPH0769775A (ja) * | 1993-07-15 | 1995-03-14 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | 粒状物質から製造された融解物の結晶化により凝固時に膨張する半導体材料からの棒またはインゴットの製造方法ならびにその実施装置 |
JP2008503427A (ja) * | 2004-06-18 | 2008-02-07 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 結晶製造装置に溶融ソース材料を装入する方法および溶融装置アッセンブリ |
Also Published As
Publication number | Publication date |
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US20140048011A1 (en) | 2014-02-20 |
TW201241244A (en) | 2012-10-16 |
KR101478274B1 (ko) | 2014-12-31 |
EP2697413B1 (de) | 2015-06-10 |
WO2012139865A1 (de) | 2012-10-18 |
CN103649381B (zh) | 2016-09-28 |
DK2697413T3 (en) | 2015-08-03 |
US8956454B2 (en) | 2015-02-17 |
DE102011007149A1 (de) | 2012-10-11 |
CN103649381A (zh) | 2014-03-19 |
EP2697413A1 (de) | 2014-02-19 |
KR20140020984A (ko) | 2014-02-19 |
JP5683744B2 (ja) | 2015-03-11 |
TWI541391B (zh) | 2016-07-11 |
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