JP2014510404A5 - - Google Patents
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- Publication number
- JP2014510404A5 JP2014510404A5 JP2013556718A JP2013556718A JP2014510404A5 JP 2014510404 A5 JP2014510404 A5 JP 2014510404A5 JP 2013556718 A JP2013556718 A JP 2013556718A JP 2013556718 A JP2013556718 A JP 2013556718A JP 2014510404 A5 JP2014510404 A5 JP 2014510404A5
- Authority
- JP
- Japan
- Prior art keywords
- laser
- light emitter
- light source
- source
- euv light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000002381 Plasma Anatomy 0.000 claims 10
- 239000000463 material Substances 0.000 claims 7
- 238000004140 cleaning Methods 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 2
- 241000894007 species Species 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Claims (9)
- チャンバと、
光学系と、
前記チャンバ内で、第1のターゲット材料液滴を用いて、EUV光放出プラズマを発生させて前記光学系上に堆積物を生成する1次EUV光放射体と、
ガスと、
前記チャンバ内で前記第1のターゲット材料液滴とは異なる第2のターゲット材料液滴からレーザ生成プラズマを発生させて前記ガスを用いて洗浄種を生成する2次光放射体と
を含む洗浄システムと
を含み、前記2次光放射体は、前記EUV光放出プラズマを生成するために前記1次EUV光放射体によって使用される第1のレーザ源とは異なる第2のレーザ源を使用する、極紫外(EUV)光源。 - 前記1次EUV光放射体は、レーザ生成プラズマである、請求項1に記載の光源。
- 前記1次EUV光放射体は、レーザ生成プラズマ及び放電生成プラズマから構成されるEUV光放射体の群から選択される、請求項1に記載の光源。
- 前記1次EUV光放射体は、レーザ生成プラズマであり、前記第1のレーザ源が、該1次EUV光放射体レーザ生成プラズマのためのレーザビームを発生させ、前記第2のレーザ源が、前記2次光放射体レーザ生成プラズマのためのレーザビームを発生させる、請求項1に記載の光源。
- 前記1次EUV光放射体は、レーザ生成プラズマであり、
前記光源が、前記1次EUV光放射体のための第1の原材料液滴と、前記2次光放射体のための前記第2のターゲット材料液滴とを発生させるのに使用される少なくとも1つの成分を有する材料送出システムを更に含む、請求項1に記載の光源。 - 前記2次光放射体は、ガス内の分解を生じる集束レーザビームを含む、請求項1に記載の光源。
- 前記ガスは、水素を含み、前記洗浄種は、水素ラジカルを含む、請求項1に記載の光源。
- 前記第1のターゲット材料液滴は、レーザビームとともに炭素を含む分子を含む、請求項1に記載の光源。
- 炭素を含む分子を有する前記材料は、油を含むことを特徴とする請求項8に記載の光源。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161464278P | 2011-03-02 | 2011-03-02 | |
US61/464,278 | 2011-03-02 | ||
US13/088,166 | 2011-04-15 | ||
US13/088,166 US8633459B2 (en) | 2011-03-02 | 2011-04-15 | Systems and methods for optics cleaning in an EUV light source |
PCT/US2012/025963 WO2012118644A1 (en) | 2011-03-02 | 2012-02-21 | Systems and methods for optics cleaning in an euv light source |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014510404A JP2014510404A (ja) | 2014-04-24 |
JP2014510404A5 true JP2014510404A5 (ja) | 2015-04-09 |
JP5819993B2 JP5819993B2 (ja) | 2015-11-24 |
Family
ID=46752747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013556718A Active JP5819993B2 (ja) | 2011-03-02 | 2012-02-21 | Euv光源内の光学系洗浄のためのシステム及び方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8633459B2 (ja) |
EP (1) | EP2681164A4 (ja) |
JP (1) | JP5819993B2 (ja) |
KR (1) | KR101909546B1 (ja) |
TW (1) | TWI573495B (ja) |
WO (1) | WO2012118644A1 (ja) |
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CN103197508B (zh) * | 2013-03-06 | 2014-11-12 | 华中科技大学 | 一种极紫外光照射下的光学表面污染与清洁模拟装置 |
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US9560730B2 (en) | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
US9557650B2 (en) | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
US9810991B2 (en) | 2013-12-23 | 2017-11-07 | Kla-Tencor Corporation | System and method for cleaning EUV optical elements |
WO2016157315A1 (ja) * | 2015-03-27 | 2016-10-06 | ギガフォトン株式会社 | 極端紫外光生成装置及びその設計方法 |
JP6688966B2 (ja) * | 2015-07-27 | 2020-04-28 | パナソニックIpマネジメント株式会社 | 粒子検出センサ |
US9776218B2 (en) * | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
NL2017606A (en) * | 2015-10-22 | 2017-05-10 | Asml Netherlands Bv | A method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle |
US9888554B2 (en) * | 2016-01-21 | 2018-02-06 | Asml Netherlands B.V. | System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector |
DE102016208850A1 (de) * | 2016-05-23 | 2017-12-07 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit Elementen zur Plasmakonditionierung |
KR102451515B1 (ko) * | 2016-07-25 | 2022-10-06 | 에이에스엠엘 네델란즈 비.브이. | 잔해물 경감 시스템, 방사선 소스 및 리소그래피 장치 |
US10606180B2 (en) | 2017-03-08 | 2020-03-31 | Asml Netherlands B.V. | EUV cleaning systems and methods thereof for an extreme ultraviolet light source |
TWI704018B (zh) * | 2017-08-25 | 2020-09-11 | 台灣積體電路製造股份有限公司 | 微影設備之清潔系統、用於清潔微影設備之集光鏡之裝置及方法 |
US11317500B2 (en) | 2017-08-30 | 2022-04-26 | Kla-Tencor Corporation | Bright and clean x-ray source for x-ray based metrology |
WO2019086397A1 (en) * | 2017-11-02 | 2019-05-09 | Asml Netherlands B.V. | Cleaning a surface of an optic within a chamber of an extreme ultraviolet light source |
US10656539B2 (en) * | 2017-11-21 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Radiation source for lithography process |
WO2019158492A1 (en) * | 2018-02-13 | 2019-08-22 | Asml Netherlands B.V. | Cleaning a structure surface in an euv chamber |
NL2022644A (en) * | 2018-03-05 | 2019-09-10 | Asml Netherlands Bv | Prolonging optical element lifetime in an euv lithography system |
US11979971B2 (en) * | 2018-06-29 | 2024-05-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV light source and apparatus for lithography |
JP6913060B2 (ja) * | 2018-07-24 | 2021-08-04 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理方法 |
CN112771999A (zh) * | 2018-09-25 | 2021-05-07 | Asml荷兰有限公司 | 在euv光源中用于靶量测和改变的激光系统 |
DE102020202179A1 (de) * | 2020-02-20 | 2021-08-26 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie und Verfahren zum Bestimmen eines Soll-Werts eines Ziel-Plasmaparameters |
CN112382915A (zh) * | 2020-11-23 | 2021-02-19 | 中国科学院上海光学精密机械研究所 | 一种突发模式脉冲提升lpp-euv光源功率的方法 |
TWI785447B (zh) * | 2020-12-29 | 2022-12-01 | 台灣積體電路製造股份有限公司 | 極紫外光設備與其運作方法 |
US11543757B2 (en) * | 2021-04-20 | 2023-01-03 | Kla Corporation | System and method for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems |
EP4330768A1 (en) * | 2021-04-26 | 2024-03-06 | ASML Netherlands B.V. | A cleaning method and associated illumination source metrology apparatus |
EP4170421A1 (en) * | 2021-10-25 | 2023-04-26 | ASML Netherlands B.V. | A cleaning method and associated illumination source metrology apparatus |
US11442365B1 (en) * | 2021-08-27 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV photolithography system and methods of operating the same |
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EP1083777A4 (en) * | 1998-05-29 | 2004-03-05 | Nippon Kogaku Kk | LASER EXCITED PLASMA LIGHT SOURCE, LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF |
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DE10326279A1 (de) * | 2003-06-11 | 2005-01-05 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Plasma-basierte Erzeugung von Röntgenstrahlung mit einem schichtförmigen Targetmaterial |
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-
2011
- 2011-04-15 US US13/088,166 patent/US8633459B2/en active Active
-
2012
- 2012-02-08 TW TW101104053A patent/TWI573495B/zh active
- 2012-02-21 EP EP12752776.0A patent/EP2681164A4/en not_active Withdrawn
- 2012-02-21 JP JP2013556718A patent/JP5819993B2/ja active Active
- 2012-02-21 WO PCT/US2012/025963 patent/WO2012118644A1/en active Application Filing
- 2012-02-21 KR KR1020137026037A patent/KR101909546B1/ko active IP Right Grant
-
2013
- 2013-12-19 US US14/135,283 patent/US9000404B2/en active Active
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