JP2014508395A - 強化された性能指数を備えるハーフホイスラー合金および製造方法 - Google Patents

強化された性能指数を備えるハーフホイスラー合金および製造方法 Download PDF

Info

Publication number
JP2014508395A
JP2014508395A JP2013546283A JP2013546283A JP2014508395A JP 2014508395 A JP2014508395 A JP 2014508395A JP 2013546283 A JP2013546283 A JP 2013546283A JP 2013546283 A JP2013546283 A JP 2013546283A JP 2014508395 A JP2014508395 A JP 2014508395A
Authority
JP
Japan
Prior art keywords
thermoelectric material
heusler
merit
grain size
cosb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013546283A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014508395A5 (enExample
Inventor
レン,ジフェン
ヤン,シャオ
ジョシ,ギリ
チェン,ガン
ポウデル,ベッド
ケイラー,ジェイムズ・クリストファー
Original Assignee
トラスティーズ オブ ボストン カレッジ
ジーエムゼット・エナジー・インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by トラスティーズ オブ ボストン カレッジ, ジーエムゼット・エナジー・インコーポレイテッド filed Critical トラスティーズ オブ ボストン カレッジ
Publication of JP2014508395A publication Critical patent/JP2014508395A/ja
Publication of JP2014508395A5 publication Critical patent/JP2014508395A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C12/00Alloys based on antimony or bismuth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/853Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
JP2013546283A 2010-12-20 2011-12-19 強化された性能指数を備えるハーフホイスラー合金および製造方法 Pending JP2014508395A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201061424878P 2010-12-20 2010-12-20
US61/424,878 2010-12-20
PCT/US2011/065841 WO2012087931A2 (en) 2010-12-20 2011-12-19 Half-heusler alloys with enhanced figure of merit and methods of making

Publications (2)

Publication Number Publication Date
JP2014508395A true JP2014508395A (ja) 2014-04-03
JP2014508395A5 JP2014508395A5 (enExample) 2015-02-19

Family

ID=46314800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013546283A Pending JP2014508395A (ja) 2010-12-20 2011-12-19 強化された性能指数を備えるハーフホイスラー合金および製造方法

Country Status (6)

Country Link
US (1) US20120326097A1 (enExample)
EP (1) EP2656404A2 (enExample)
JP (1) JP2014508395A (enExample)
KR (1) KR20140040072A (enExample)
CN (1) CN103314458A (enExample)
WO (1) WO2012087931A2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140009182A (ko) 2010-10-22 2014-01-22 캘리포니아 인스티튜트 오브 테크놀로지 낮은 열전도율을 위한 나노메쉬 포노닉 구조들 및 열전 에너지 변환 재료들
US20130019918A1 (en) 2011-07-18 2013-01-24 The Regents Of The University Of Michigan Thermoelectric devices, systems and methods
US10205080B2 (en) 2012-01-17 2019-02-12 Matrix Industries, Inc. Systems and methods for forming thermoelectric devices
WO2013149205A1 (en) 2012-03-29 2013-10-03 California Institute Of Technology Phononic structures and related devices and methods
CN104321890B (zh) * 2012-07-17 2017-07-04 株式会社东芝 热电转换材料及使用其的热电转换模块以及其制造方法
KR20150086466A (ko) 2012-08-17 2015-07-28 실리시움 에너지, 인크. 열전 디바이스 형성 시스템 및 형성 방법
WO2014070795A1 (en) 2012-10-31 2014-05-08 Silicium Energy, Inc. Methods for forming thermoelectric elements
DE102013103896B4 (de) 2013-04-17 2015-05-28 Vacuumschmelze Gmbh & Co. Kg Verfahren zum Herstellen eines thermoelektrischen Gegenstands für eine thermoelektrische Umwandlungsvorrichtung
US10439121B2 (en) 2013-12-05 2019-10-08 Robert Bosch Gmbh Materials for thermoelectric energy conversion
US10243127B2 (en) * 2014-03-24 2019-03-26 University Of Houston System Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials
WO2015148493A1 (en) * 2014-03-24 2015-10-01 University Of Houston System Nbfesb-based half-heusler thermoelectric materials and methods of fabrication and use
EP3123532B1 (en) 2014-03-25 2018-11-21 Matrix Industries, Inc. Thermoelectric devices and systems
WO2016205781A1 (en) 2015-06-19 2016-12-22 University Of Florida Research Foundation, Inc. Nickel titanium alloys, methods of manufacture thereof and article comprising the same
TW201809931A (zh) 2016-05-03 2018-03-16 麥崔克斯工業股份有限公司 熱電裝置及系統
DE102016211877A1 (de) * 2016-06-30 2018-01-04 Vacuumschmelze Gmbh & Co. Kg Thermoelektrischer Gegenstand und Verbundmaterial für eine thermoelektrische Umwandlungsvorrichtung sowie Verfahren zum Herstellen eines thermoelektrischen Gegenstands
USD819627S1 (en) 2016-11-11 2018-06-05 Matrix Industries, Inc. Thermoelectric smartwatch
CN108048725A (zh) * 2017-11-28 2018-05-18 深圳大学 ZrNiSn基高熵热电材料及其制备方法与热电器件
CN112899550B (zh) * 2021-01-18 2022-07-19 四川大学 一种锆镍锡基半哈斯勒-石墨烯复合热电材料及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004049464A1 (ja) * 2002-11-28 2004-06-10 Sumitomo Electric Industries, Ltd. 熱電材料及びその製造方法
JP2008227321A (ja) * 2007-03-15 2008-09-25 Toshiba Corp 熱電変換材料及びこれを用いた熱電変換モジュール
JP2010129636A (ja) * 2008-11-26 2010-06-10 Toshiba Corp 熱電変換材料およびそれを用いた熱電変換モジュール並びに熱電変換材料の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356607A (ja) * 2002-11-12 2004-12-16 Toshiba Corp 熱電変換材料および熱電変換素子
JP2005019713A (ja) * 2003-06-26 2005-01-20 Rikogaku Shinkokai M1−xAx・Ni1−yBy・Snz−1Czハーフホイスラー型の高温用熱電材料及び製造方法
US20060157102A1 (en) * 2005-01-12 2006-07-20 Showa Denko K.K. Waste heat recovery system and thermoelectric conversion system
CN101245426A (zh) * 2008-03-04 2008-08-20 浙江大学 一种制备半哈斯勒热电化合物的方法
JP5333001B2 (ja) * 2008-12-15 2013-11-06 株式会社豊田中央研究所 熱電材料及びその製造方法
US20100163091A1 (en) * 2008-12-30 2010-07-01 Industrial Technology Research Institute Composite material of complex alloy and generation method thereof, thermoelectric device and thermoelectric module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004049464A1 (ja) * 2002-11-28 2004-06-10 Sumitomo Electric Industries, Ltd. 熱電材料及びその製造方法
JP2008227321A (ja) * 2007-03-15 2008-09-25 Toshiba Corp 熱電変換材料及びこれを用いた熱電変換モジュール
JP2010129636A (ja) * 2008-11-26 2010-06-10 Toshiba Corp 熱電変換材料およびそれを用いた熱電変換モジュール並びに熱電変換材料の製造方法

Also Published As

Publication number Publication date
WO2012087931A2 (en) 2012-06-28
WO2012087931A3 (en) 2012-12-13
KR20140040072A (ko) 2014-04-02
CN103314458A (zh) 2013-09-18
EP2656404A2 (en) 2013-10-30
US20120326097A1 (en) 2012-12-27

Similar Documents

Publication Publication Date Title
JP2014508395A (ja) 強化された性能指数を備えるハーフホイスラー合金および製造方法
US9048004B2 (en) Half-heusler alloys with enhanced figure of merit and methods of making
Shen et al. Enhancing thermoelectric performance of FeNbSb half-Heusler compound by Hf-Ti dual-doping
Xie et al. High performance Bi2Te3 nanocomposites prepared by single-element-melt-spinning spark-plasma sintering
EP2255906B1 (en) Fabrication of high performance densified nanocrystalline bulk thermoelectric materials using high pressure sintering technique
JP5329423B2 (ja) ナノ構造をもつ熱電材料における高い示性数のための方法
CN102257648B (zh) 体加工的品质因数增强的热电材料
Yu et al. Enhanced thermoelectric figure of merit in nanocrystalline Bi2Te3 bulk
Hegde et al. A review on doped/composite bismuth chalcogenide compounds for thermoelectric device applications: various synthesis techniques and challenges
Zhang et al. Phase compositions, nanoscale microstructures and thermoelectric properties in Ag2− ySbyTe1+ y alloys with precipitated Sb2Te3 plates
Li et al. Significant enhancement of the thermoelectric performance of higher manganese silicide by incorporating MnTe nanophase derived from Te nanowire
Zhang et al. Improved thermoelectric properties of AgSbTe2 based compounds with nanoscale Ag2Te in situ precipitates
Li et al. Thermoelectric properties of hydrothermally synthesized Bi2Te3− xSex nanocrystals
Amin Bhuiyan et al. A review on performance evaluation of Bi2Te3-based and some other thermoelectric nanostructured materials
Williams et al. Understanding the superior thermoelectric performance of Sb precipitated Ge 17 Sb 2 Te 20
Zhu et al. Enhanced thermoelectric properties of n-type Bi2Te2. 7Se0. 3 semiconductor by manipulating its parent liquid state
Tan et al. Rapid preparation of Ge0. 9Sb0. 1Te1+ x via unique melt spinning: Hierarchical microstructure and improved thermoelectric performance
Karati et al. Simultaneous increase in thermopower and electrical conductivity through Ta-doping and nanostructuring in half-Heusler TiNiSn alloys
Legese et al. A review of lamellar eutectic morphologies for enhancing thermoelectric and mechanical performance of thermoelectric materials
Kumar et al. Influence of synthesis method and processing on the thermoelectric properties of CoSb3 skutterudites
Femi et al. Effect of processing route on the bipolar contribution to the thermoelectric properties of n-type eutectic Bi22. 5Sb7. 5Te70 alloy
JP2009094497A (ja) p型熱電材料及びその製造方法
Fitriani et al. Enhancement of thermoelectric properties in cold pressed nickel doped bismuth sulfide compounds
Balasubramanian et al. On the formation of phases and their influence on the thermal stability and thermoelectric properties of nanostructured zinc antimonide
Meena et al. Melt solidification rate-dependent structural and thermoelectric properties of Sb2Te3/Te nanocomposites

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141219

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160329

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20161115