KR20140040072A - 성능 지수가 향상된 반 호이슬러 합금과 이를 제조하는 방법 - Google Patents
성능 지수가 향상된 반 호이슬러 합금과 이를 제조하는 방법 Download PDFInfo
- Publication number
- KR20140040072A KR20140040072A KR1020137016913A KR20137016913A KR20140040072A KR 20140040072 A KR20140040072 A KR 20140040072A KR 1020137016913 A KR1020137016913 A KR 1020137016913A KR 20137016913 A KR20137016913 A KR 20137016913A KR 20140040072 A KR20140040072 A KR 20140040072A
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- South Korea
- Prior art keywords
- thermoelectric
- merit
- hoistler
- cosb
- grain size
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 229910001291 heusler alloy Inorganic materials 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 144
- 238000000498 ball milling Methods 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 239000000470 constituent Substances 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000007787 solid Substances 0.000 claims abstract description 6
- 238000001746 injection moulding Methods 0.000 claims abstract description 5
- 238000005266 casting Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 229910018989 CoSb Inorganic materials 0.000 claims description 81
- 229910005887 NiSn Inorganic materials 0.000 claims description 77
- 229910052735 hafnium Inorganic materials 0.000 claims description 30
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 229910052726 zirconium Inorganic materials 0.000 claims description 17
- 229910052787 antimony Inorganic materials 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000007731 hot pressing Methods 0.000 claims description 4
- 239000002096 quantum dot Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 description 127
- 239000011135 tin Substances 0.000 description 82
- 239000000523 sample Substances 0.000 description 78
- 239000000203 mixture Substances 0.000 description 42
- 230000007423 decrease Effects 0.000 description 26
- 239000011858 nanopowder Substances 0.000 description 18
- 230000006872 improvement Effects 0.000 description 17
- 238000003917 TEM image Methods 0.000 description 16
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- 230000006835 compression Effects 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 238000006467 substitution reaction Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 239000000843 powder Substances 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 238000004627 transmission electron microscopy Methods 0.000 description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000002114 nanocomposite Substances 0.000 description 6
- 238000010314 arc-melting process Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000000329 molecular dynamics simulation Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000004626 scanning electron microscopy Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000003966 growth inhibitor Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002918 waste heat Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 101100476210 Caenorhabditis elegans rnt-1 gene Proteins 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004098 selected area electron diffraction Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201061424878P | 2010-12-20 | 2010-12-20 | |
| US61/424,878 | 2010-12-20 | ||
| PCT/US2011/065841 WO2012087931A2 (en) | 2010-12-20 | 2011-12-19 | Half-heusler alloys with enhanced figure of merit and methods of making |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140040072A true KR20140040072A (ko) | 2014-04-02 |
Family
ID=46314800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137016913A Withdrawn KR20140040072A (ko) | 2010-12-20 | 2011-12-19 | 성능 지수가 향상된 반 호이슬러 합금과 이를 제조하는 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120326097A1 (enExample) |
| EP (1) | EP2656404A2 (enExample) |
| JP (1) | JP2014508395A (enExample) |
| KR (1) | KR20140040072A (enExample) |
| CN (1) | CN103314458A (enExample) |
| WO (1) | WO2012087931A2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140009182A (ko) | 2010-10-22 | 2014-01-22 | 캘리포니아 인스티튜트 오브 테크놀로지 | 낮은 열전도율을 위한 나노메쉬 포노닉 구조들 및 열전 에너지 변환 재료들 |
| US20130019918A1 (en) | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
| US10205080B2 (en) | 2012-01-17 | 2019-02-12 | Matrix Industries, Inc. | Systems and methods for forming thermoelectric devices |
| WO2013149205A1 (en) | 2012-03-29 | 2013-10-03 | California Institute Of Technology | Phononic structures and related devices and methods |
| CN104321890B (zh) * | 2012-07-17 | 2017-07-04 | 株式会社东芝 | 热电转换材料及使用其的热电转换模块以及其制造方法 |
| KR20150086466A (ko) | 2012-08-17 | 2015-07-28 | 실리시움 에너지, 인크. | 열전 디바이스 형성 시스템 및 형성 방법 |
| WO2014070795A1 (en) | 2012-10-31 | 2014-05-08 | Silicium Energy, Inc. | Methods for forming thermoelectric elements |
| DE102013103896B4 (de) | 2013-04-17 | 2015-05-28 | Vacuumschmelze Gmbh & Co. Kg | Verfahren zum Herstellen eines thermoelektrischen Gegenstands für eine thermoelektrische Umwandlungsvorrichtung |
| US10439121B2 (en) | 2013-12-05 | 2019-10-08 | Robert Bosch Gmbh | Materials for thermoelectric energy conversion |
| US10243127B2 (en) * | 2014-03-24 | 2019-03-26 | University Of Houston System | Systems and methods of fabrication and use of NbFeSb P-type half-heusler thermoelectric materials |
| WO2015148493A1 (en) * | 2014-03-24 | 2015-10-01 | University Of Houston System | Nbfesb-based half-heusler thermoelectric materials and methods of fabrication and use |
| EP3123532B1 (en) | 2014-03-25 | 2018-11-21 | Matrix Industries, Inc. | Thermoelectric devices and systems |
| WO2016205781A1 (en) | 2015-06-19 | 2016-12-22 | University Of Florida Research Foundation, Inc. | Nickel titanium alloys, methods of manufacture thereof and article comprising the same |
| TW201809931A (zh) | 2016-05-03 | 2018-03-16 | 麥崔克斯工業股份有限公司 | 熱電裝置及系統 |
| DE102016211877A1 (de) * | 2016-06-30 | 2018-01-04 | Vacuumschmelze Gmbh & Co. Kg | Thermoelektrischer Gegenstand und Verbundmaterial für eine thermoelektrische Umwandlungsvorrichtung sowie Verfahren zum Herstellen eines thermoelektrischen Gegenstands |
| USD819627S1 (en) | 2016-11-11 | 2018-06-05 | Matrix Industries, Inc. | Thermoelectric smartwatch |
| CN108048725A (zh) * | 2017-11-28 | 2018-05-18 | 深圳大学 | ZrNiSn基高熵热电材料及其制备方法与热电器件 |
| CN112899550B (zh) * | 2021-01-18 | 2022-07-19 | 四川大学 | 一种锆镍锡基半哈斯勒-石墨烯复合热电材料及其制备方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004356607A (ja) * | 2002-11-12 | 2004-12-16 | Toshiba Corp | 熱電変換材料および熱電変換素子 |
| WO2004049464A1 (ja) * | 2002-11-28 | 2004-06-10 | Sumitomo Electric Industries, Ltd. | 熱電材料及びその製造方法 |
| JP2005019713A (ja) * | 2003-06-26 | 2005-01-20 | Rikogaku Shinkokai | M1−xAx・Ni1−yBy・Snz−1Czハーフホイスラー型の高温用熱電材料及び製造方法 |
| US20060157102A1 (en) * | 2005-01-12 | 2006-07-20 | Showa Denko K.K. | Waste heat recovery system and thermoelectric conversion system |
| JP2008227321A (ja) * | 2007-03-15 | 2008-09-25 | Toshiba Corp | 熱電変換材料及びこれを用いた熱電変換モジュール |
| CN101245426A (zh) * | 2008-03-04 | 2008-08-20 | 浙江大学 | 一种制备半哈斯勒热电化合物的方法 |
| JP5271054B2 (ja) * | 2008-11-26 | 2013-08-21 | 株式会社東芝 | 熱電変換材料の製造方法 |
| JP5333001B2 (ja) * | 2008-12-15 | 2013-11-06 | 株式会社豊田中央研究所 | 熱電材料及びその製造方法 |
| US20100163091A1 (en) * | 2008-12-30 | 2010-07-01 | Industrial Technology Research Institute | Composite material of complex alloy and generation method thereof, thermoelectric device and thermoelectric module |
-
2011
- 2011-12-19 EP EP11850669.0A patent/EP2656404A2/en not_active Withdrawn
- 2011-12-19 JP JP2013546283A patent/JP2014508395A/ja active Pending
- 2011-12-19 US US13/330,216 patent/US20120326097A1/en not_active Abandoned
- 2011-12-19 KR KR1020137016913A patent/KR20140040072A/ko not_active Withdrawn
- 2011-12-19 WO PCT/US2011/065841 patent/WO2012087931A2/en not_active Ceased
- 2011-12-19 CN CN2011800598113A patent/CN103314458A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012087931A2 (en) | 2012-06-28 |
| WO2012087931A3 (en) | 2012-12-13 |
| CN103314458A (zh) | 2013-09-18 |
| EP2656404A2 (en) | 2013-10-30 |
| JP2014508395A (ja) | 2014-04-03 |
| US20120326097A1 (en) | 2012-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20130628 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |