JP2014501037A5 - - Google Patents

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Publication number
JP2014501037A5
JP2014501037A5 JP2013538225A JP2013538225A JP2014501037A5 JP 2014501037 A5 JP2014501037 A5 JP 2014501037A5 JP 2013538225 A JP2013538225 A JP 2013538225A JP 2013538225 A JP2013538225 A JP 2013538225A JP 2014501037 A5 JP2014501037 A5 JP 2014501037A5
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JP
Japan
Prior art keywords
beamlet
blocking
dimensional pattern
pattern
distance
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Application number
JP2013538225A
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English (en)
Japanese (ja)
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JP2014501037A (ja
JP5882348B2 (ja
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Priority claimed from PCT/EP2011/070032 external-priority patent/WO2012062931A1/en
Publication of JP2014501037A publication Critical patent/JP2014501037A/ja
Publication of JP2014501037A5 publication Critical patent/JP2014501037A5/ja
Application granted granted Critical
Publication of JP5882348B2 publication Critical patent/JP5882348B2/ja
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JP2013538225A 2010-11-13 2011-11-14 マルチ小ビーム露光装置における２つの小ビーム間の距離を決定する方法 Active JP5882348B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41445910P 2010-11-17 2010-11-17
US61/414,459 2010-11-17
PCT/EP2011/070032 WO2012062931A1 (en) 2010-11-13 2011-11-14 Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Publications (3)

Publication Number Publication Date
JP2014501037A JP2014501037A (ja) 2014-01-16
JP2014501037A5 true JP2014501037A5 (enExample) 2015-07-09
JP5882348B2 JP5882348B2 (ja) 2016-03-09

Family

ID=44993550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013538225A Active JP5882348B2 (ja) 2010-11-13 2011-11-14 マルチ小ビーム露光装置における２つの小ビーム間の距離を決定する方法

Country Status (6)

Country Link
US (1) US9030675B2 (enExample)
EP (2) EP2638562B1 (enExample)
JP (1) JP5882348B2 (enExample)
RU (1) RU2576018C2 (enExample)
TW (1) TWI545611B (enExample)
WO (1) WO2012062931A1 (enExample)

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CN104795303B (zh) * 2009-05-20 2017-12-05 迈普尔平版印刷Ip有限公司 用于处理图案数据的方法
NL2010795C2 (en) * 2012-05-14 2013-12-31 Mapper Lithography Ip Bv Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus.
CN105705686B (zh) * 2013-03-06 2018-01-02 海克私人有限公司 用于制作纳米本体的设备
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
KR102359084B1 (ko) * 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조
US11740356B2 (en) * 2020-06-05 2023-08-29 Honeywell International Inc. Dual-optical displacement sensor alignment using knife edges
WO2023110331A1 (en) * 2021-12-17 2023-06-22 Asml Netherlands B.V. Charged-particle optical apparatus and projection method
EP4199031A1 (en) * 2021-12-17 2023-06-21 ASML Netherlands B.V. Charged-particle optical apparatus and projection method
US12380596B2 (en) 2021-12-23 2025-08-05 Fei Company Method and system for determining beam position

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Publication number Priority date Publication date Assignee Title
EP0049799B1 (en) 1980-10-09 1986-02-12 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
JPS62260335A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd パタ−ン検査方法および装置
US5136169A (en) * 1991-04-05 1992-08-04 Massachusetts Institute Of Technology Energy beam locating
US5872618A (en) 1996-02-28 1999-02-16 Nikon Corporation Projection exposure apparatus
US5892230A (en) * 1997-05-29 1999-04-06 Massachusetts Institute Of Technology Scintillating fiducial patterns
US6791094B1 (en) 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
WO2001048560A1 (en) 1999-12-28 2001-07-05 Toshiba Tec Kabushiki Kaisha Image forming device and fixing device
CN1936703B (zh) 2002-06-18 2011-12-07 Hoya株式会社 灰调掩模及其制造方法
JP4150547B2 (ja) * 2002-08-02 2008-09-17 株式会社日立ハイテクノロジーズ マルチビーム計測方法及びマルチビーム装置
EP1554634B1 (en) 2002-10-25 2011-12-21 Mapper Lithography Ip B.V. Lithography system
US6919570B2 (en) 2002-12-19 2005-07-19 Advanced Electron Beams, Inc. Electron beam sensor
JP4184782B2 (ja) * 2002-12-20 2008-11-19 株式会社日立製作所 マルチ電子ビーム装置およびそれに用いられるマルチ電子ビーム電流の計測・表示方法
JP3962778B2 (ja) 2004-06-02 2007-08-22 株式会社日立ハイテクノロジーズ 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置
JP2007042803A (ja) 2005-08-02 2007-02-15 Honda Motor Co Ltd イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法
WO2007032670A1 (en) * 2005-09-15 2007-03-22 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7868300B2 (en) 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7521685B2 (en) * 2006-01-18 2009-04-21 General Electric Company Structured scintillator and systems employing structured scintillators
JP5301312B2 (ja) 2008-03-21 2013-09-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置の較正用基板及び描画方法
NL1037820C2 (en) 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.

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