JP2009543053A5 - - Google Patents

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Publication number
JP2009543053A5
JP2009543053A5 JP2009518137A JP2009518137A JP2009543053A5 JP 2009543053 A5 JP2009543053 A5 JP 2009543053A5 JP 2009518137 A JP2009518137 A JP 2009518137A JP 2009518137 A JP2009518137 A JP 2009518137A JP 2009543053 A5 JP2009543053 A5 JP 2009543053A5
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JP
Japan
Prior art keywords
sensor
shield
density distribution
ion
beam current
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Application number
JP2009518137A
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English (en)
Japanese (ja)
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JP2009543053A (ja
JP5397623B2 (ja
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Priority claimed from US11/477,335 external-priority patent/US7453070B2/en
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Publication of JP2009543053A publication Critical patent/JP2009543053A/ja
Publication of JP2009543053A5 publication Critical patent/JP2009543053A5/ja
Application granted granted Critical
Publication of JP5397623B2 publication Critical patent/JP5397623B2/ja
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JP2009518137A 2006-06-29 2007-06-06 ビーム密度の二次元測定システム、方法および装置 Active JP5397623B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/477,335 US7453070B2 (en) 2006-06-29 2006-06-29 Methods and apparatus for beam density measurement in two dimensions
US11/477,335 2006-06-29
PCT/US2007/013350 WO2008005137A2 (en) 2006-06-29 2007-06-06 Methods and apparatus for beam density measurement in two dimensions

Publications (3)

Publication Number Publication Date
JP2009543053A JP2009543053A (ja) 2009-12-03
JP2009543053A5 true JP2009543053A5 (enExample) 2010-07-29
JP5397623B2 JP5397623B2 (ja) 2014-01-22

Family

ID=38846758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518137A Active JP5397623B2 (ja) 2006-06-29 2007-06-06 ビーム密度の二次元測定システム、方法および装置

Country Status (6)

Country Link
US (1) US7453070B2 (enExample)
JP (1) JP5397623B2 (enExample)
KR (1) KR101330039B1 (enExample)
CN (1) CN101484967B (enExample)
TW (1) TWI405956B (enExample)
WO (1) WO2008005137A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7855361B2 (en) * 2008-05-30 2010-12-21 Varian, Inc. Detection of positive and negative ions
US20110291022A1 (en) * 2010-05-28 2011-12-01 Axcelis Technologies, Inc. Post Implant Wafer Heating Using Light
US20130299722A1 (en) * 2010-11-19 2013-11-14 Advanced Ion Beam Technology, Inc. Ion implantation method and ion implanter
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
US9006692B2 (en) * 2013-05-03 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for controlling ion implantation uniformity
US20170005013A1 (en) 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
JP6489322B2 (ja) * 2016-04-28 2019-03-27 日新イオン機器株式会社 イオンビームエッチング装置
JP6982531B2 (ja) 2018-03-26 2021-12-17 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
US10520360B1 (en) * 2018-07-31 2019-12-31 Northrop Grumman Systems Corporation Automated power-in-the-bucket measurement apparatus for large aperture laser systems
CN111769030B (zh) * 2019-04-02 2024-10-01 北京中科信电子装备有限公司 一种束流竖直方向密度分布的测量装置及方法
CN110444458A (zh) * 2019-08-09 2019-11-12 德淮半导体有限公司 一种检测装置、离子植入设备及离子束剖面的离子浓度分布的可视化方法
US11598890B2 (en) * 2020-06-17 2023-03-07 Battelle Energy Alliance, Llc Ion beam profiling system and related methods
CN114388321B (zh) * 2022-03-24 2022-08-05 广州粤芯半导体技术有限公司 参数获取装置、方法、离子注入方法和半导体工艺设备
KR102441670B1 (ko) * 2022-04-20 2022-09-08 큐알티 주식회사 지능형 빔 세기 계산 시스템, 및 이의 계산 방법
US20240249908A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Dose Cup Assembly for an Ion Implanter

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958380A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 荷電粒子線のビ−ム径及び電流密度測定法
JPH0232290A (ja) * 1988-07-22 1990-02-02 Nec Corp ファラデーケージ
JPH065661Y2 (ja) * 1989-05-02 1994-02-09 株式会社エリオニクス 電流密度分布測定装置
US5282121A (en) * 1991-04-30 1994-01-25 Vari-Lite, Inc. High intensity lighting projectors
JPH0594800A (ja) * 1991-10-03 1993-04-16 Nissin Electric Co Ltd イオンビームスポツト形状認識方法
JP2591415Y2 (ja) * 1992-01-10 1999-03-03 日新電機株式会社 ビーム電流測定装置
WO2002058103A2 (en) 2001-01-17 2002-07-25 Varian Semiconductor Equipment Associates, Inc. In situ ion beam incidence angle and beam divergence monitor
DE10329383B4 (de) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ionenstrahldetektor für Ionenimplantationsanlagen, Faraday-Behälter dafür und Verfahren zur Steuerung der Eigenschaften eines Ionenstrahls mittels des Ionenstrahldetektors
JP4179168B2 (ja) * 2004-01-06 2008-11-12 日新イオン機器株式会社 イオンビーム計測方法およびイオン注入装置
GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
TWI240313B (en) * 2004-06-11 2005-09-21 Nanya Technology Corp Method and device of monitoring and controlling ion beam energy distribution
US6989545B1 (en) 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
US7417242B2 (en) 2005-04-01 2008-08-26 Axcelis Technologies, Inc. Method of measuring ion beam position
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7202483B2 (en) 2005-04-05 2007-04-10 Olson Joseph C Methods and apparatus for ion beam angle measurement in two dimensions

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