TWI405956B - 二維離子束密度量測的方法及其裝置 - Google Patents
二維離子束密度量測的方法及其裝置 Download PDFInfo
- Publication number
- TWI405956B TWI405956B TW096120691A TW96120691A TWI405956B TW I405956 B TWI405956 B TW I405956B TW 096120691 A TW096120691 A TW 096120691A TW 96120691 A TW96120691 A TW 96120691A TW I405956 B TWI405956 B TW I405956B
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- Prior art keywords
- ion beam
- sensor
- mask
- beam current
- ion
- Prior art date
Links
- 238000001739 density measurement Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 12
- 238000009826 distribution Methods 0.000 claims abstract description 48
- 238000010884 ion-beam technique Methods 0.000 claims description 540
- 239000000758 substrate Substances 0.000 claims description 37
- 238000013519 translation Methods 0.000 claims description 35
- 230000008859 change Effects 0.000 claims description 19
- 238000011144 upstream manufacturing Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 41
- 239000000463 material Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000013507 mapping Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0448—Adjustable, e.g. focussing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
- G01J2001/4261—Scan through beam in order to obtain a cross-sectional profile of the beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24542—Beam profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/477,335 US7453070B2 (en) | 2006-06-29 | 2006-06-29 | Methods and apparatus for beam density measurement in two dimensions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200801460A TW200801460A (en) | 2008-01-01 |
| TWI405956B true TWI405956B (zh) | 2013-08-21 |
Family
ID=38846758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096120691A TWI405956B (zh) | 2006-06-29 | 2007-06-08 | 二維離子束密度量測的方法及其裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7453070B2 (enExample) |
| JP (1) | JP5397623B2 (enExample) |
| KR (1) | KR101330039B1 (enExample) |
| CN (1) | CN101484967B (enExample) |
| TW (1) | TWI405956B (enExample) |
| WO (1) | WO2008005137A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2427508B (en) * | 2004-01-06 | 2008-06-25 | Applied Materials Inc | Ion beam monitoring arrangement |
| US7855361B2 (en) * | 2008-05-30 | 2010-12-21 | Varian, Inc. | Detection of positive and negative ions |
| US20110291022A1 (en) * | 2010-05-28 | 2011-12-01 | Axcelis Technologies, Inc. | Post Implant Wafer Heating Using Light |
| US20130299722A1 (en) * | 2010-11-19 | 2013-11-14 | Advanced Ion Beam Technology, Inc. | Ion implantation method and ion implanter |
| US9711324B2 (en) | 2012-05-31 | 2017-07-18 | Axcelis Technologies, Inc. | Inert atmospheric pressure pre-chill and post-heat |
| US9006692B2 (en) * | 2013-05-03 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for controlling ion implantation uniformity |
| US20170005013A1 (en) | 2015-06-30 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Technique |
| JP6489322B2 (ja) * | 2016-04-28 | 2019-03-27 | 日新イオン機器株式会社 | イオンビームエッチング装置 |
| JP6982531B2 (ja) | 2018-03-26 | 2021-12-17 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置および測定装置 |
| US10520360B1 (en) * | 2018-07-31 | 2019-12-31 | Northrop Grumman Systems Corporation | Automated power-in-the-bucket measurement apparatus for large aperture laser systems |
| CN111769030B (zh) * | 2019-04-02 | 2024-10-01 | 北京中科信电子装备有限公司 | 一种束流竖直方向密度分布的测量装置及方法 |
| CN110444458A (zh) * | 2019-08-09 | 2019-11-12 | 德淮半导体有限公司 | 一种检测装置、离子植入设备及离子束剖面的离子浓度分布的可视化方法 |
| US11598890B2 (en) * | 2020-06-17 | 2023-03-07 | Battelle Energy Alliance, Llc | Ion beam profiling system and related methods |
| CN114388321B (zh) * | 2022-03-24 | 2022-08-05 | 广州粤芯半导体技术有限公司 | 参数获取装置、方法、离子注入方法和半导体工艺设备 |
| KR102441670B1 (ko) * | 2022-04-20 | 2022-09-08 | 큐알티 주식회사 | 지능형 빔 세기 계산 시스템, 및 이의 계산 방법 |
| US20240249908A1 (en) * | 2023-01-25 | 2024-07-25 | Applied Materials, Inc. | Dose Cup Assembly for an Ion Implanter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638014A (zh) * | 2004-01-06 | 2005-07-13 | 应用材料有限公司 | 离子束监测装置 |
| TWI240313B (en) * | 2004-06-11 | 2005-09-21 | Nanya Technology Corp | Method and device of monitoring and controlling ion beam energy distribution |
| US20060006346A1 (en) * | 2004-07-07 | 2006-01-12 | Rathmell Robert D | Device and method for measurement of beam angle and divergence normal to plane of scanned beam or ribbon beam |
| US7026628B2 (en) * | 2003-06-30 | 2006-04-11 | Advanced Micro Devices, Inc. | Advanced ion beam detector for ion implantation tools |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5958380A (ja) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | 荷電粒子線のビ−ム径及び電流密度測定法 |
| JPH0232290A (ja) * | 1988-07-22 | 1990-02-02 | Nec Corp | ファラデーケージ |
| JPH065661Y2 (ja) * | 1989-05-02 | 1994-02-09 | 株式会社エリオニクス | 電流密度分布測定装置 |
| US5282121A (en) * | 1991-04-30 | 1994-01-25 | Vari-Lite, Inc. | High intensity lighting projectors |
| JPH0594800A (ja) * | 1991-10-03 | 1993-04-16 | Nissin Electric Co Ltd | イオンビームスポツト形状認識方法 |
| JP2591415Y2 (ja) * | 1992-01-10 | 1999-03-03 | 日新電機株式会社 | ビーム電流測定装置 |
| WO2002058103A2 (en) | 2001-01-17 | 2002-07-25 | Varian Semiconductor Equipment Associates, Inc. | In situ ion beam incidence angle and beam divergence monitor |
| JP4179168B2 (ja) * | 2004-01-06 | 2008-11-12 | 日新イオン機器株式会社 | イオンビーム計測方法およびイオン注入装置 |
| US7417242B2 (en) | 2005-04-01 | 2008-08-26 | Axcelis Technologies, Inc. | Method of measuring ion beam position |
| US7394073B2 (en) * | 2005-04-05 | 2008-07-01 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for ion beam angle measurement in two dimensions |
| US7202483B2 (en) | 2005-04-05 | 2007-04-10 | Olson Joseph C | Methods and apparatus for ion beam angle measurement in two dimensions |
-
2006
- 2006-06-29 US US11/477,335 patent/US7453070B2/en active Active
-
2007
- 2007-06-06 JP JP2009518137A patent/JP5397623B2/ja active Active
- 2007-06-06 CN CN2007800239218A patent/CN101484967B/zh active Active
- 2007-06-06 KR KR1020097001155A patent/KR101330039B1/ko active Active
- 2007-06-06 WO PCT/US2007/013350 patent/WO2008005137A2/en not_active Ceased
- 2007-06-08 TW TW096120691A patent/TWI405956B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7026628B2 (en) * | 2003-06-30 | 2006-04-11 | Advanced Micro Devices, Inc. | Advanced ion beam detector for ion implantation tools |
| CN1638014A (zh) * | 2004-01-06 | 2005-07-13 | 应用材料有限公司 | 离子束监测装置 |
| TWI240313B (en) * | 2004-06-11 | 2005-09-21 | Nanya Technology Corp | Method and device of monitoring and controlling ion beam energy distribution |
| US20060006346A1 (en) * | 2004-07-07 | 2006-01-12 | Rathmell Robert D | Device and method for measurement of beam angle and divergence normal to plane of scanned beam or ribbon beam |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101484967A (zh) | 2009-07-15 |
| WO2008005137A3 (en) | 2008-05-15 |
| KR101330039B1 (ko) | 2013-11-15 |
| CN101484967B (zh) | 2011-10-26 |
| JP2009543053A (ja) | 2009-12-03 |
| JP5397623B2 (ja) | 2014-01-22 |
| WO2008005137A2 (en) | 2008-01-10 |
| US20080073550A1 (en) | 2008-03-27 |
| TW200801460A (en) | 2008-01-01 |
| KR20090029273A (ko) | 2009-03-20 |
| US7453070B2 (en) | 2008-11-18 |
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