JP5397623B2 - ビーム密度の二次元測定システム、方法および装置 - Google Patents

ビーム密度の二次元測定システム、方法および装置 Download PDF

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JP5397623B2
JP5397623B2 JP2009518137A JP2009518137A JP5397623B2 JP 5397623 B2 JP5397623 B2 JP 5397623B2 JP 2009518137 A JP2009518137 A JP 2009518137A JP 2009518137 A JP2009518137 A JP 2009518137A JP 5397623 B2 JP5397623 B2 JP 5397623B2
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shield
sensor
beam current
ion
edge
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JP2009543053A (ja
JP2009543053A5 (enExample
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グプタ、アテュール
オルソン、ジョセフ、シー．
ノリス、グレグ、エー．
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0437—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using masks, aperture plates, spatial light modulators, spatial filters, e.g. reflective filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
    • G01J1/0448—Adjustable, e.g. focussing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
    • G01J2001/4261—Scan through beam in order to obtain a cross-sectional profile of the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2009518137A 2006-06-29 2007-06-06 ビーム密度の二次元測定システム、方法および装置 Active JP5397623B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/477,335 US7453070B2 (en) 2006-06-29 2006-06-29 Methods and apparatus for beam density measurement in two dimensions
US11/477,335 2006-06-29
PCT/US2007/013350 WO2008005137A2 (en) 2006-06-29 2007-06-06 Methods and apparatus for beam density measurement in two dimensions

Publications (3)

Publication Number Publication Date
JP2009543053A JP2009543053A (ja) 2009-12-03
JP2009543053A5 JP2009543053A5 (enExample) 2010-07-29
JP5397623B2 true JP5397623B2 (ja) 2014-01-22

Family

ID=38846758

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Application Number Title Priority Date Filing Date
JP2009518137A Active JP5397623B2 (ja) 2006-06-29 2007-06-06 ビーム密度の二次元測定システム、方法および装置

Country Status (6)

Country Link
US (1) US7453070B2 (enExample)
JP (1) JP5397623B2 (enExample)
KR (1) KR101330039B1 (enExample)
CN (1) CN101484967B (enExample)
TW (1) TWI405956B (enExample)
WO (1) WO2008005137A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10790117B2 (en) 2018-03-26 2020-09-29 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation apparatus and measurement device

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GB2427508B (en) * 2004-01-06 2008-06-25 Applied Materials Inc Ion beam monitoring arrangement
US7855361B2 (en) * 2008-05-30 2010-12-21 Varian, Inc. Detection of positive and negative ions
US20110291022A1 (en) * 2010-05-28 2011-12-01 Axcelis Technologies, Inc. Post Implant Wafer Heating Using Light
US20130299722A1 (en) * 2010-11-19 2013-11-14 Advanced Ion Beam Technology, Inc. Ion implantation method and ion implanter
US9711324B2 (en) 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
US9006692B2 (en) * 2013-05-03 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for controlling ion implantation uniformity
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
JP6489322B2 (ja) * 2016-04-28 2019-03-27 日新イオン機器株式会社 イオンビームエッチング装置
US10520360B1 (en) * 2018-07-31 2019-12-31 Northrop Grumman Systems Corporation Automated power-in-the-bucket measurement apparatus for large aperture laser systems
CN111769030B (zh) * 2019-04-02 2024-10-01 北京中科信电子装备有限公司 一种束流竖直方向密度分布的测量装置及方法
CN110444458A (zh) * 2019-08-09 2019-11-12 德淮半导体有限公司 一种检测装置、离子植入设备及离子束剖面的离子浓度分布的可视化方法
US11598890B2 (en) * 2020-06-17 2023-03-07 Battelle Energy Alliance, Llc Ion beam profiling system and related methods
CN114388321B (zh) * 2022-03-24 2022-08-05 广州粤芯半导体技术有限公司 参数获取装置、方法、离子注入方法和半导体工艺设备
KR102441670B1 (ko) * 2022-04-20 2022-09-08 큐알티 주식회사 지능형 빔 세기 계산 시스템, 및 이의 계산 방법
US20240249908A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Dose Cup Assembly for an Ion Implanter

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JPS5958380A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 荷電粒子線のビ−ム径及び電流密度測定法
JPH0232290A (ja) * 1988-07-22 1990-02-02 Nec Corp ファラデーケージ
JPH065661Y2 (ja) * 1989-05-02 1994-02-09 株式会社エリオニクス 電流密度分布測定装置
US5282121A (en) * 1991-04-30 1994-01-25 Vari-Lite, Inc. High intensity lighting projectors
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Publication number Priority date Publication date Assignee Title
US10790117B2 (en) 2018-03-26 2020-09-29 Sumitomo Heavy Industries Ion Technology Co., Ltd. Ion implantation apparatus and measurement device

Also Published As

Publication number Publication date
KR20090029273A (ko) 2009-03-20
TWI405956B (zh) 2013-08-21
CN101484967B (zh) 2011-10-26
WO2008005137A3 (en) 2008-05-15
JP2009543053A (ja) 2009-12-03
CN101484967A (zh) 2009-07-15
TW200801460A (en) 2008-01-01
KR101330039B1 (ko) 2013-11-15
US7453070B2 (en) 2008-11-18
US20080073550A1 (en) 2008-03-27
WO2008005137A2 (en) 2008-01-10

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