JP2009524195A5 - - Google Patents

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Publication number
JP2009524195A5
JP2009524195A5 JP2008551347A JP2008551347A JP2009524195A5 JP 2009524195 A5 JP2009524195 A5 JP 2009524195A5 JP 2008551347 A JP2008551347 A JP 2008551347A JP 2008551347 A JP2008551347 A JP 2008551347A JP 2009524195 A5 JP2009524195 A5 JP 2009524195A5
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JP
Japan
Prior art keywords
shape
mask
angle
sensor
current sensor
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JP2008551347A
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English (en)
Japanese (ja)
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JP5203221B2 (ja
JP2009524195A (ja
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Priority claimed from US11/336,466 external-priority patent/US7394073B2/en
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JP2008551347A 2006-01-20 2007-01-17 ２つの次元でイオンビーム角を測定する方法及び装置 Active JP5203221B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/336,466 2006-01-20
US11/336,466 US7394073B2 (en) 2005-04-05 2006-01-20 Methods and apparatus for ion beam angle measurement in two dimensions
PCT/US2007/001204 WO2007087209A1 (en) 2006-01-20 2007-01-17 Methods and apparatus for ion beam angle measurement in two dimensions

Publications (3)

Publication Number Publication Date
JP2009524195A JP2009524195A (ja) 2009-06-25
JP2009524195A5 true JP2009524195A5 (enExample) 2010-02-12
JP5203221B2 JP5203221B2 (ja) 2013-06-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008551347A Active JP5203221B2 (ja) 2006-01-20 2007-01-17 ２つの次元でイオンビーム角を測定する方法及び装置

Country Status (6)

Country Link
US (1) US7394073B2 (enExample)
JP (1) JP5203221B2 (enExample)
KR (1) KR101318803B1 (enExample)
CN (1) CN101371328B (enExample)
TW (1) TWI393161B (enExample)
WO (1) WO2007087209A1 (enExample)

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US7435977B2 (en) * 2005-12-12 2008-10-14 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods for ion implantation systems
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7453070B2 (en) * 2006-06-29 2008-11-18 Varian Semiconductor Associates, Inc. Methods and apparatus for beam density measurement in two dimensions
US20080017811A1 (en) * 2006-07-18 2008-01-24 Collart Erik J H Beam stop for an ion implanter
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US7561983B2 (en) * 2006-09-29 2009-07-14 Varian Semiconductor Equipment Associates, Inc. Technique for improving ion implantation based on ion beam angle-related information
US7683348B2 (en) * 2006-10-11 2010-03-23 Axcelis Technologies, Inc. Sensor for ion implanter
US7479644B2 (en) * 2006-10-30 2009-01-20 Applied Materials, Inc. Ion beam diagnostics
US7528391B2 (en) * 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
US7883909B2 (en) * 2006-12-28 2011-02-08 Texas Instruments Incorporated Method to measure ion beam angle
US7518130B2 (en) * 2007-04-30 2009-04-14 United Microelectronics Corp. Ion beam blocking component and ion beam blocking device having the same
US7807984B2 (en) * 2008-01-02 2010-10-05 Applied Materials, Inc. Ion implanters
US8097866B2 (en) * 2008-02-14 2012-01-17 Varian Semiconductor Equipment Associates, Inc. Apparatus for measuring beam characteristics and a method thereof
US7855361B2 (en) * 2008-05-30 2010-12-21 Varian, Inc. Detection of positive and negative ions
US7897944B2 (en) * 2008-07-21 2011-03-01 Axcelis Technologies, Inc. Method and apparatus for measurement of beam angle in ion implantation
US9000446B2 (en) 2009-05-22 2015-04-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US8101927B2 (en) * 2009-06-08 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Masking apparatus for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8309938B2 (en) * 2009-09-29 2012-11-13 Varian Semiconductor Equipment Associates, Inc. Ion beam incident angle detection assembly and method
US8173527B2 (en) 2009-10-19 2012-05-08 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation
US20120060353A1 (en) * 2010-09-14 2012-03-15 Varian Semiconductor Equipment Associates, Inc. Mechanism and method for ensuring alignment of a workpiece to a mask
DE102011006588A1 (de) * 2011-03-31 2012-10-04 Carl Zeiss Nts Gmbh Teilchenstrahlgerät mit Detektoranordnung
US8378318B1 (en) * 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
CN103794446B (zh) * 2013-10-24 2016-05-04 北京中科信电子装备有限公司 一种垂直方向角度测量的系统
CN103794448B (zh) * 2013-11-08 2016-03-16 北京中科信电子装备有限公司 一种垂直方向角度测量的装置
CN103715048B (zh) * 2013-12-16 2016-05-18 中国电子科技集团公司第四十八研究所 一种离子注入机竖直方向离子束角度测控系统及测量方法
US20170005013A1 (en) 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
JP6588323B2 (ja) * 2015-12-10 2019-10-09 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US11049691B2 (en) 2017-12-21 2021-06-29 Varian Semiconductor Equipment Associates, Inc. Ion beam quality control using a movable mass resolving device
JP6985951B2 (ja) 2018-02-08 2021-12-22 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
JP6982531B2 (ja) * 2018-03-26 2021-12-17 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
CN111128658B (zh) * 2018-10-31 2025-02-25 北京中科信电子装备有限公司 一种离子束水平与垂直角度测量装置
CN111769026B (zh) * 2019-04-02 2024-03-12 北京中科信电子装备有限公司 一种束流性质测量装置及方法
JP7332437B2 (ja) * 2019-11-01 2023-08-23 住友重機械イオンテクノロジー株式会社 イオン注入装置
US11574796B1 (en) 2021-07-21 2023-02-07 Applied Materials, Inc. Dual XY variable aperture in an ion implantation system
CN114388321B (zh) * 2022-03-24 2022-08-05 广州粤芯半导体技术有限公司 参数获取装置、方法、离子注入方法和半导体工艺设备
KR20230167994A (ko) * 2022-06-03 2023-12-12 삼성전자주식회사 평행도 측정용 광학 어셈블리, 이를 포함한 광학 장치, 다이 본딩 시스템 및 이를 이용한 다이 본딩 방법
CN119383813A (zh) * 2024-10-25 2025-01-28 中国科学院合肥物质科学研究院 一种离子探针及诊断设备

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US6791094B1 (en) * 1999-06-24 2004-09-14 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for determining beam parallelism and direction
TWI231405B (en) * 1999-12-22 2005-04-21 Asml Netherlands Bv Lithographic projection apparatus, position detection device, and method of manufacturing a device using a lithographic projection apparatus
US6946667B2 (en) * 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6690022B2 (en) * 2001-01-17 2004-02-10 Varian Semiconductor Equipment Associates, Inc. Ion beam incidence angle and beam divergence monitor
US6831282B2 (en) * 2001-02-09 2004-12-14 Nikon Corporation Methods and devices for evaluating beam blur in a charged-particle-beam microlithography apparatus
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US20040149926A1 (en) * 2002-12-11 2004-08-05 Purser Kenneth H. Emittance measuring device for ion beams
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
DE10329388B4 (de) * 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb
JP2005285518A (ja) * 2004-03-29 2005-10-13 Toshiba Corp イオン注入装置およびイオン注入方法
US6872953B1 (en) * 2004-05-20 2005-03-29 Axcelis Technologies, Inc. Two dimensional stationary beam profile and angular mapping
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
US7417242B2 (en) * 2005-04-01 2008-08-26 Axcelis Technologies, Inc. Method of measuring ion beam position

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