TWI393161B - 二維離子束角度測量的方法及其裝置 - Google Patents
二維離子束角度測量的方法及其裝置 Download PDFInfo
- Publication number
- TWI393161B TWI393161B TW096102031A TW96102031A TWI393161B TW I393161 B TWI393161 B TW I393161B TW 096102031 A TW096102031 A TW 096102031A TW 96102031 A TW96102031 A TW 96102031A TW I393161 B TWI393161 B TW I393161B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion beam
- angle
- flag
- mask
- sensor
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 393
- 238000000034 method Methods 0.000 title claims description 18
- 238000005259 measurement Methods 0.000 title description 50
- 238000013519 translation Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 18
- 230000007246 mechanism Effects 0.000 claims description 17
- 230000004044 response Effects 0.000 claims description 8
- 230000001154 acute effect Effects 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 51
- 230000007704 transition Effects 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 25
- 230000006870 function Effects 0.000 description 23
- 230000001629 suppression Effects 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000003068 static effect Effects 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003607 modifier Substances 0.000 description 4
- 230000036961 partial effect Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 238000004091 panning Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
- H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electron Sources, Ion Sources (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/336,466 US7394073B2 (en) | 2005-04-05 | 2006-01-20 | Methods and apparatus for ion beam angle measurement in two dimensions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200739648A TW200739648A (en) | 2007-10-16 |
| TWI393161B true TWI393161B (zh) | 2013-04-11 |
Family
ID=38137760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096102031A TWI393161B (zh) | 2006-01-20 | 2007-01-19 | 二維離子束角度測量的方法及其裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7394073B2 (enExample) |
| JP (1) | JP5203221B2 (enExample) |
| KR (1) | KR101318803B1 (enExample) |
| CN (1) | CN101371328B (enExample) |
| TW (1) | TWI393161B (enExample) |
| WO (1) | WO2007087209A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2427508B (en) * | 2004-01-06 | 2008-06-25 | Applied Materials Inc | Ion beam monitoring arrangement |
| US7435977B2 (en) * | 2005-12-12 | 2008-10-14 | Axcelis Technologies, Inc. | Ion beam angle measurement systems and methods for ion implantation systems |
| US7476876B2 (en) * | 2005-12-21 | 2009-01-13 | Axcelis Technologies, Inc. | Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems |
| US7453070B2 (en) * | 2006-06-29 | 2008-11-18 | Varian Semiconductor Associates, Inc. | Methods and apparatus for beam density measurement in two dimensions |
| US20080017811A1 (en) * | 2006-07-18 | 2008-01-24 | Collart Erik J H | Beam stop for an ion implanter |
| US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
| US7561983B2 (en) * | 2006-09-29 | 2009-07-14 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implantation based on ion beam angle-related information |
| US7683348B2 (en) * | 2006-10-11 | 2010-03-23 | Axcelis Technologies, Inc. | Sensor for ion implanter |
| US7479644B2 (en) * | 2006-10-30 | 2009-01-20 | Applied Materials, Inc. | Ion beam diagnostics |
| US7528391B2 (en) * | 2006-12-22 | 2009-05-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for reducing contamination during ion implantation |
| US7883909B2 (en) * | 2006-12-28 | 2011-02-08 | Texas Instruments Incorporated | Method to measure ion beam angle |
| US7518130B2 (en) * | 2007-04-30 | 2009-04-14 | United Microelectronics Corp. | Ion beam blocking component and ion beam blocking device having the same |
| US7807984B2 (en) * | 2008-01-02 | 2010-10-05 | Applied Materials, Inc. | Ion implanters |
| US8097866B2 (en) * | 2008-02-14 | 2012-01-17 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for measuring beam characteristics and a method thereof |
| US7855361B2 (en) * | 2008-05-30 | 2010-12-21 | Varian, Inc. | Detection of positive and negative ions |
| US7897944B2 (en) * | 2008-07-21 | 2011-03-01 | Axcelis Technologies, Inc. | Method and apparatus for measurement of beam angle in ion implantation |
| US9000446B2 (en) | 2009-05-22 | 2015-04-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US8101927B2 (en) * | 2009-06-08 | 2012-01-24 | Varian Semiconductor Equipment Associates, Inc. | Masking apparatus for an ion implanter |
| US8164068B2 (en) * | 2009-07-30 | 2012-04-24 | Varian Semiconductor Equipment Associates, Inc. | Mask health monitor using a faraday probe |
| US8309938B2 (en) * | 2009-09-29 | 2012-11-13 | Varian Semiconductor Equipment Associates, Inc. | Ion beam incident angle detection assembly and method |
| US8173527B2 (en) | 2009-10-19 | 2012-05-08 | Varian Semiconductor Equipment Associates, Inc. | Stepped masking for patterned implantation |
| US20120060353A1 (en) * | 2010-09-14 | 2012-03-15 | Varian Semiconductor Equipment Associates, Inc. | Mechanism and method for ensuring alignment of a workpiece to a mask |
| DE102011006588A1 (de) * | 2011-03-31 | 2012-10-04 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät mit Detektoranordnung |
| US8378318B1 (en) * | 2011-11-18 | 2013-02-19 | Varian Semiconductor Equipment Associates, Inc. | Fixed mask design improvements |
| JP6150632B2 (ja) * | 2013-06-26 | 2017-06-21 | 住友重機械イオンテクノロジー株式会社 | イオンビーム測定装置及びイオンビーム測定方法 |
| CN103794446B (zh) * | 2013-10-24 | 2016-05-04 | 北京中科信电子装备有限公司 | 一种垂直方向角度测量的系统 |
| CN103794448B (zh) * | 2013-11-08 | 2016-03-16 | 北京中科信电子装备有限公司 | 一种垂直方向角度测量的装置 |
| CN103715048B (zh) * | 2013-12-16 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | 一种离子注入机竖直方向离子束角度测控系统及测量方法 |
| US20170005013A1 (en) | 2015-06-30 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Technique |
| JP6588323B2 (ja) * | 2015-12-10 | 2019-10-09 | 住友重機械イオンテクノロジー株式会社 | イオン注入方法およびイオン注入装置 |
| US11049691B2 (en) | 2017-12-21 | 2021-06-29 | Varian Semiconductor Equipment Associates, Inc. | Ion beam quality control using a movable mass resolving device |
| JP6985951B2 (ja) | 2018-02-08 | 2021-12-22 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置および測定装置 |
| JP6982531B2 (ja) * | 2018-03-26 | 2021-12-17 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置および測定装置 |
| CN111128658B (zh) * | 2018-10-31 | 2025-02-25 | 北京中科信电子装备有限公司 | 一种离子束水平与垂直角度测量装置 |
| CN111769026B (zh) * | 2019-04-02 | 2024-03-12 | 北京中科信电子装备有限公司 | 一种束流性质测量装置及方法 |
| JP7332437B2 (ja) * | 2019-11-01 | 2023-08-23 | 住友重機械イオンテクノロジー株式会社 | イオン注入装置 |
| US11574796B1 (en) | 2021-07-21 | 2023-02-07 | Applied Materials, Inc. | Dual XY variable aperture in an ion implantation system |
| CN114388321B (zh) * | 2022-03-24 | 2022-08-05 | 广州粤芯半导体技术有限公司 | 参数获取装置、方法、离子注入方法和半导体工艺设备 |
| KR20230167994A (ko) * | 2022-06-03 | 2023-12-12 | 삼성전자주식회사 | 평행도 측정용 광학 어셈블리, 이를 포함한 광학 장치, 다이 본딩 시스템 및 이를 이용한 다이 본딩 방법 |
| CN119383813A (zh) * | 2024-10-25 | 2025-01-28 | 中国科学院合肥物质科学研究院 | 一种离子探针及诊断设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690022B2 (en) * | 2001-01-17 | 2004-02-10 | Varian Semiconductor Equipment Associates, Inc. | Ion beam incidence angle and beam divergence monitor |
| TW587271B (en) * | 2001-10-26 | 2004-05-11 | Nissin Electric Co Ltd | Ion implanting method and apparatus |
| WO2004053943A2 (en) * | 2002-12-11 | 2004-06-24 | Purser Kenneth H | Emittance measuring device for ion beams |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6791094B1 (en) * | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
| TWI231405B (en) * | 1999-12-22 | 2005-04-21 | Asml Netherlands Bv | Lithographic projection apparatus, position detection device, and method of manufacturing a device using a lithographic projection apparatus |
| US6946667B2 (en) * | 2000-03-01 | 2005-09-20 | Advanced Ion Beam Technology, Inc. | Apparatus to decelerate and control ion beams to improve the total quality of ion implantation |
| US6831282B2 (en) * | 2001-02-09 | 2004-12-14 | Nikon Corporation | Methods and devices for evaluating beam blur in a charged-particle-beam microlithography apparatus |
| US6828572B2 (en) * | 2003-04-01 | 2004-12-07 | Axcelis Technologies, Inc. | Ion beam incident angle detector for ion implant systems |
| DE10329388B4 (de) * | 2003-06-30 | 2006-12-28 | Advanced Micro Devices, Inc., Sunnyvale | Faraday-Anordnung als Ionenstrahlmessvorrichtung für eine Ionenimplantationsanlage und Verfahren zu deren Betrieb |
| JP2005285518A (ja) * | 2004-03-29 | 2005-10-13 | Toshiba Corp | イオン注入装置およびイオン注入方法 |
| US6872953B1 (en) * | 2004-05-20 | 2005-03-29 | Axcelis Technologies, Inc. | Two dimensional stationary beam profile and angular mapping |
| US6989545B1 (en) * | 2004-07-07 | 2006-01-24 | Axcelis Technologies, Inc. | Device and method for measurement of beam angle and divergence |
| JP5100963B2 (ja) * | 2004-11-30 | 2012-12-19 | 株式会社Ｓｅｎ | ビーム照射装置 |
| US7417242B2 (en) * | 2005-04-01 | 2008-08-26 | Axcelis Technologies, Inc. | Method of measuring ion beam position |
-
2006
- 2006-01-20 US US11/336,466 patent/US7394073B2/en active Active
-
2007
- 2007-01-17 WO PCT/US2007/001204 patent/WO2007087209A1/en not_active Ceased
- 2007-01-17 KR KR1020087019775A patent/KR101318803B1/ko active Active
- 2007-01-17 JP JP2008551347A patent/JP5203221B2/ja active Active
- 2007-01-17 CN CN2007800026673A patent/CN101371328B/zh active Active
- 2007-01-19 TW TW096102031A patent/TWI393161B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690022B2 (en) * | 2001-01-17 | 2004-02-10 | Varian Semiconductor Equipment Associates, Inc. | Ion beam incidence angle and beam divergence monitor |
| TW587271B (en) * | 2001-10-26 | 2004-05-11 | Nissin Electric Co Ltd | Ion implanting method and apparatus |
| WO2004053943A2 (en) * | 2002-12-11 | 2004-06-24 | Purser Kenneth H | Emittance measuring device for ion beams |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101318803B1 (ko) | 2013-10-16 |
| WO2007087209A1 (en) | 2007-08-02 |
| CN101371328B (zh) | 2010-06-02 |
| JP5203221B2 (ja) | 2013-06-05 |
| US20060289798A1 (en) | 2006-12-28 |
| US7394073B2 (en) | 2008-07-01 |
| TW200739648A (en) | 2007-10-16 |
| KR20080092955A (ko) | 2008-10-16 |
| JP2009524195A (ja) | 2009-06-25 |
| CN101371328A (zh) | 2009-02-18 |
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