JP2015517734A5 - - Google Patents

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Publication number
JP2015517734A5
JP2015517734A5 JP2015512021A JP2015512021A JP2015517734A5 JP 2015517734 A5 JP2015517734 A5 JP 2015517734A5 JP 2015512021 A JP2015512021 A JP 2015512021A JP 2015512021 A JP2015512021 A JP 2015512021A JP 2015517734 A5 JP2015517734 A5 JP 2015517734A5
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JP
Japan
Prior art keywords
charged particle
dimensional pattern
blocking
dimensional
feature
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JP2015512021A
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English (en)
Japanese (ja)
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JP2015517734A (ja
JP6239595B2 (ja
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Priority claimed from PCT/EP2013/059861 external-priority patent/WO2013171177A1/en
Publication of JP2015517734A publication Critical patent/JP2015517734A/ja
Publication of JP2015517734A5 publication Critical patent/JP2015517734A5/ja
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Publication of JP6239595B2 publication Critical patent/JP6239595B2/ja
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JP2015512021A 2012-05-14 2013-05-14 マルチ小ビーム露光装置において小ビーム位置を測定するための方法及び２つの小ビーム間の距離を測定するための方法 Active JP6239595B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646430P 2012-05-14 2012-05-14
US61/646,430 2012-05-14
PCT/EP2013/059861 WO2013171177A1 (en) 2012-05-14 2013-05-14 Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Publications (3)

Publication Number Publication Date
JP2015517734A JP2015517734A (ja) 2015-06-22
JP2015517734A5 true JP2015517734A5 (enExample) 2016-06-23
JP6239595B2 JP6239595B2 (ja) 2017-11-29

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ID=48463964

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JP2015512021A Active JP6239595B2 (ja) 2012-05-14 2013-05-14 マルチ小ビーム露光装置において小ビーム位置を測定するための方法及び２つの小ビーム間の距離を測定するための方法

Country Status (6)

Country Link
US (2) US9653259B2 (enExample)
JP (1) JP6239595B2 (enExample)
KR (1) KR101959945B1 (enExample)
NL (1) NL2010795C2 (enExample)
TW (1) TWI582542B (enExample)
WO (1) WO2013171177A1 (enExample)

Families Citing this family (12)

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CA2836990C (en) * 2011-06-07 2018-08-28 Carefusion Germany 326 Gmbh Device for separating piece goods to be stored in an automated storage facility
NL2012029C2 (en) 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
WO2016028335A1 (en) * 2014-08-19 2016-02-25 Intel Corporation Corner rounding correction for electron beam (ebeam) direct write system
KR102330221B1 (ko) 2014-11-05 2021-11-25 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
KR102333285B1 (ko) 2015-08-20 2021-11-30 삼성전자주식회사 노광 장치
JP2018010895A (ja) * 2016-07-11 2018-01-18 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US11131541B2 (en) 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
DE102018124044B3 (de) * 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
EP4199031A1 (en) * 2021-12-17 2023-06-21 ASML Netherlands B.V. Charged-particle optical apparatus and projection method
WO2023110331A1 (en) * 2021-12-17 2023-06-22 Asml Netherlands B.V. Charged-particle optical apparatus and projection method
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS5570024A (en) 1978-11-21 1980-05-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Electron beam exposure method
JP2644257B2 (ja) 1988-03-08 1997-08-25 株式会社東芝 ビーム検出用ターゲット
US6353231B1 (en) 1998-08-31 2002-03-05 Nikon Corporation Pinhole detector for electron intensity distribution
EP1335249A1 (en) 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3544657B2 (ja) 2002-09-13 2004-07-21 株式会社日立製作所 電子ビーム描画装置
KR101060557B1 (ko) * 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
JP2005032508A (ja) 2003-07-10 2005-02-03 Tokyo Seimitsu Co Ltd 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法
JP3962778B2 (ja) 2004-06-02 2007-08-22 株式会社日立ハイテクノロジーズ 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法
US7868300B2 (en) 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
EP1943662B1 (en) * 2005-09-15 2016-11-23 Mapper Lithography IP B.V. Lithography system, sensor and measuring method
NL1037820C2 (en) * 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
WO2012062931A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

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