TWI582542B - 在多子束曝光設備中用於決定子束位置的方法及用於決定兩個子束之間的距離的方法 - Google Patents
在多子束曝光設備中用於決定子束位置的方法及用於決定兩個子束之間的距離的方法 Download PDFInfo
- Publication number
- TWI582542B TWI582542B TW102117002A TW102117002A TWI582542B TW I582542 B TWI582542 B TW I582542B TW 102117002 A TW102117002 A TW 102117002A TW 102117002 A TW102117002 A TW 102117002A TW I582542 B TWI582542 B TW I582542B
- Authority
- TW
- Taiwan
- Prior art keywords
- beamlet
- charged particle
- dimensional
- pattern
- determining
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 47
- 239000002245 particle Substances 0.000 claims description 79
- 238000005259 measurement Methods 0.000 claims description 60
- 230000004888 barrier function Effects 0.000 claims description 56
- 230000000903 blocking effect Effects 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 25
- 238000001459 lithography Methods 0.000 description 19
- 238000010894 electron beam technology Methods 0.000 description 18
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 12
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000013307 optical fiber Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
- H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31774—Multi-beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646430P | 2012-05-14 | 2012-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201400992A TW201400992A (zh) | 2014-01-01 |
| TWI582542B true TWI582542B (zh) | 2017-05-11 |
Family
ID=48463964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102117002A TWI582542B (zh) | 2012-05-14 | 2013-05-14 | 在多子束曝光設備中用於決定子束位置的方法及用於決定兩個子束之間的距離的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9653259B2 (enExample) |
| JP (1) | JP6239595B2 (enExample) |
| KR (1) | KR101959945B1 (enExample) |
| NL (1) | NL2010795C2 (enExample) |
| TW (1) | TWI582542B (enExample) |
| WO (1) | WO2013171177A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2836990C (en) * | 2011-06-07 | 2018-08-28 | Carefusion Germany 326 Gmbh | Device for separating piece goods to be stored in an automated storage facility |
| NL2012029C2 (en) | 2013-12-24 | 2015-06-26 | Mapper Lithography Ip Bv | Charged particle lithography system with sensor assembly. |
| WO2016028335A1 (en) * | 2014-08-19 | 2016-02-25 | Intel Corporation | Corner rounding correction for electron beam (ebeam) direct write system |
| KR102330221B1 (ko) | 2014-11-05 | 2021-11-25 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 표시 장치 |
| US10008364B2 (en) * | 2015-02-27 | 2018-06-26 | Kla-Tencor Corporation | Alignment of multi-beam patterning tool |
| KR102333285B1 (ko) | 2015-08-20 | 2021-11-30 | 삼성전자주식회사 | 노광 장치 |
| JP2018010895A (ja) * | 2016-07-11 | 2018-01-18 | 株式会社ニューフレアテクノロジー | ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置 |
| US11131541B2 (en) | 2018-06-29 | 2021-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shutter monitoring system |
| DE102018124044B3 (de) * | 2018-09-28 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem |
| EP4199031A1 (en) * | 2021-12-17 | 2023-06-21 | ASML Netherlands B.V. | Charged-particle optical apparatus and projection method |
| WO2023110331A1 (en) * | 2021-12-17 | 2023-06-22 | Asml Netherlands B.V. | Charged-particle optical apparatus and projection method |
| EP4202970A1 (en) * | 2021-12-24 | 2023-06-28 | ASML Netherlands B.V. | Alignment determination method and computer program |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1335249A1 (en) * | 2002-02-06 | 2003-08-13 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060197453A1 (en) * | 2005-03-01 | 2006-09-07 | Hitachi High-Technologies Corporation | Electron beam writing system and electron beam writing method |
| US20070057204A1 (en) * | 2005-09-15 | 2007-03-15 | Pieter Kruit | Lithography system, sensor and measuring method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5468149A (en) | 1977-11-11 | 1979-06-01 | Erionikusu Kk | Electron ray application device |
| JPS5570024A (en) | 1978-11-21 | 1980-05-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Electron beam exposure method |
| JP2644257B2 (ja) | 1988-03-08 | 1997-08-25 | 株式会社東芝 | ビーム検出用ターゲット |
| US6353231B1 (en) | 1998-08-31 | 2002-03-05 | Nikon Corporation | Pinhole detector for electron intensity distribution |
| JP3544657B2 (ja) | 2002-09-13 | 2004-07-21 | 株式会社日立製作所 | 電子ビーム描画装置 |
| KR101060557B1 (ko) * | 2002-10-25 | 2011-08-31 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그라피 시스템 |
| JP2005032508A (ja) | 2003-07-10 | 2005-02-03 | Tokyo Seimitsu Co Ltd | 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法 |
| JP3962778B2 (ja) | 2004-06-02 | 2007-08-22 | 株式会社日立ハイテクノロジーズ | 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置 |
| EP1943662B1 (en) * | 2005-09-15 | 2016-11-23 | Mapper Lithography IP B.V. | Lithography system, sensor and measuring method |
| NL1037820C2 (en) * | 2010-03-22 | 2011-09-23 | Mapper Lithography Ip Bv | Lithography system, sensor, sensor surface element and method of manufacture. |
| WO2012062931A1 (en) | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus |
-
2013
- 2013-05-14 US US14/400,815 patent/US9653259B2/en not_active Ceased
- 2013-05-14 US US16/414,386 patent/USRE49483E1/en active Active
- 2013-05-14 WO PCT/EP2013/059861 patent/WO2013171177A1/en not_active Ceased
- 2013-05-14 JP JP2015512021A patent/JP6239595B2/ja active Active
- 2013-05-14 NL NL2010795A patent/NL2010795C2/en active
- 2013-05-14 TW TW102117002A patent/TWI582542B/zh active
- 2013-05-14 KR KR1020147035204A patent/KR101959945B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1335249A1 (en) * | 2002-02-06 | 2003-08-13 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060197453A1 (en) * | 2005-03-01 | 2006-09-07 | Hitachi High-Technologies Corporation | Electron beam writing system and electron beam writing method |
| US20070057204A1 (en) * | 2005-09-15 | 2007-03-15 | Pieter Kruit | Lithography system, sensor and measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101959945B1 (ko) | 2019-03-19 |
| NL2010795C2 (en) | 2013-12-31 |
| WO2013171177A9 (en) | 2014-01-30 |
| WO2013171177A1 (en) | 2013-11-21 |
| JP2015517734A (ja) | 2015-06-22 |
| KR20150013802A (ko) | 2015-02-05 |
| US9653259B2 (en) | 2017-05-16 |
| TW201400992A (zh) | 2014-01-01 |
| USRE49483E1 (en) | 2023-04-04 |
| JP6239595B2 (ja) | 2017-11-29 |
| NL2010795A (en) | 2013-11-18 |
| US20150155136A1 (en) | 2015-06-04 |
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