KR101959945B1 - 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 - Google Patents

빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 Download PDF

Info

Publication number
KR101959945B1
KR101959945B1 KR1020147035204A KR20147035204A KR101959945B1 KR 101959945 B1 KR101959945 B1 KR 101959945B1 KR 1020147035204 A KR1020147035204 A KR 1020147035204A KR 20147035204 A KR20147035204 A KR 20147035204A KR 101959945 B1 KR101959945 B1 KR 101959945B1
Authority
KR
South Korea
Prior art keywords
beamlet
charged particle
beamlets
dimensional
blocking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147035204A
Other languages
English (en)
Korean (ko)
Other versions
KR20150013802A (ko
Inventor
폴 이즈머트 셰퍼
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마퍼 리쏘그라피 아이피 비.브이. filed Critical 마퍼 리쏘그라피 아이피 비.브이.
Publication of KR20150013802A publication Critical patent/KR20150013802A/ko
Application granted granted Critical
Publication of KR101959945B1 publication Critical patent/KR101959945B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/065—Source emittance characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
KR1020147035204A 2012-05-14 2013-05-14 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법 Active KR101959945B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646430P 2012-05-14 2012-05-14
US61/646,430 2012-05-14
PCT/EP2013/059861 WO2013171177A1 (en) 2012-05-14 2013-05-14 Method for determining a beamlet position and method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Publications (2)

Publication Number Publication Date
KR20150013802A KR20150013802A (ko) 2015-02-05
KR101959945B1 true KR101959945B1 (ko) 2019-03-19

Family

ID=48463964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147035204A Active KR101959945B1 (ko) 2012-05-14 2013-05-14 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법

Country Status (6)

Country Link
US (2) US9653259B2 (enExample)
JP (1) JP6239595B2 (enExample)
KR (1) KR101959945B1 (enExample)
NL (1) NL2010795C2 (enExample)
TW (1) TWI582542B (enExample)
WO (1) WO2013171177A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2836990C (en) * 2011-06-07 2018-08-28 Carefusion Germany 326 Gmbh Device for separating piece goods to be stored in an automated storage facility
NL2012029C2 (en) 2013-12-24 2015-06-26 Mapper Lithography Ip Bv Charged particle lithography system with sensor assembly.
WO2016028335A1 (en) * 2014-08-19 2016-02-25 Intel Corporation Corner rounding correction for electron beam (ebeam) direct write system
KR102330221B1 (ko) 2014-11-05 2021-11-25 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 표시 장치
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
KR102333285B1 (ko) 2015-08-20 2021-11-30 삼성전자주식회사 노광 장치
JP2018010895A (ja) * 2016-07-11 2018-01-18 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ、ブランキングアパーチャアレイの製造方法、及びマルチ荷電粒子ビーム描画装置
US11131541B2 (en) 2018-06-29 2021-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Shutter monitoring system
DE102018124044B3 (de) * 2018-09-28 2020-02-06 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Vielstrahl-Teilchenstrahlmikroskops und Vielstrahl-Teilchenstrahlsystem
EP4199031A1 (en) * 2021-12-17 2023-06-21 ASML Netherlands B.V. Charged-particle optical apparatus and projection method
WO2023110331A1 (en) * 2021-12-17 2023-06-22 Asml Netherlands B.V. Charged-particle optical apparatus and projection method
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208079A (ja) 1998-08-31 2000-07-28 Nikon Corp 電子線の強度分布を測定するピンホ―ル検出器
JP2005347054A (ja) 2004-06-02 2005-12-15 Hitachi High-Technologies Corp 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS5570024A (en) 1978-11-21 1980-05-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Electron beam exposure method
JP2644257B2 (ja) 1988-03-08 1997-08-25 株式会社東芝 ビーム検出用ターゲット
EP1335249A1 (en) 2002-02-06 2003-08-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3544657B2 (ja) 2002-09-13 2004-07-21 株式会社日立製作所 電子ビーム描画装置
KR101060557B1 (ko) * 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
JP2005032508A (ja) 2003-07-10 2005-02-03 Tokyo Seimitsu Co Ltd 電子ビーム強度分布測定装置、電子ビーム装置、電子ビーム露光装置及び電子ビーム強度分布測定方法
JP4907092B2 (ja) * 2005-03-01 2012-03-28 株式会社日立ハイテクノロジーズ 電子ビーム描画装置および電子ビーム描画方法
US7868300B2 (en) 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
EP1943662B1 (en) * 2005-09-15 2016-11-23 Mapper Lithography IP B.V. Lithography system, sensor and measuring method
NL1037820C2 (en) * 2010-03-22 2011-09-23 Mapper Lithography Ip Bv Lithography system, sensor, sensor surface element and method of manufacture.
WO2012062931A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208079A (ja) 1998-08-31 2000-07-28 Nikon Corp 電子線の強度分布を測定するピンホ―ル検出器
JP2005347054A (ja) 2004-06-02 2005-12-15 Hitachi High-Technologies Corp 電子ビーム検出器、並びにそれを用いた電子ビーム描画方法及び電子ビーム描画装置

Also Published As

Publication number Publication date
TWI582542B (zh) 2017-05-11
NL2010795C2 (en) 2013-12-31
WO2013171177A9 (en) 2014-01-30
WO2013171177A1 (en) 2013-11-21
JP2015517734A (ja) 2015-06-22
KR20150013802A (ko) 2015-02-05
US9653259B2 (en) 2017-05-16
TW201400992A (zh) 2014-01-01
USRE49483E1 (en) 2023-04-04
JP6239595B2 (ja) 2017-11-29
NL2010795A (en) 2013-11-18
US20150155136A1 (en) 2015-06-04

Similar Documents

Publication Publication Date Title
KR101959945B1 (ko) 빔렛 위치를 결정하기 위한 방법 및 멀티 빔렛 노출 장치에서 2개의 빔렛들 간의 거리를 결정하기 위한 방법
JP5505821B2 (ja) 粒子ビーム露光装置のためのパターンロック装置
US9373424B2 (en) Electron beam writing apparatus and electron beam writing method
US10483088B2 (en) Multi charged particle beam writing apparatus and multi charged particle beam writing method
Slot et al. MAPPER: high throughput maskless lithography
EP2550671B1 (en) Lithography system, sensor, converter element and method of manufacture
JP2018061048A (ja) アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
JP5882348B2 (ja) マルチ小ビーム露光装置における２つの小ビーム間の距離を決定する方法
JPH10214779A (ja) 電子ビーム露光方法及び該方法を用いたデバイス製造方法
JP6128744B2 (ja) 描画装置、描画方法、および、物品の製造方法
US6809319B2 (en) Electron beam writing equipment and electron beam writing method
CN117716464A (zh) 带电粒子评估系统和在带电粒子评估系统中对准样品的方法
JP2017151159A (ja) 検査装置及び検査方法
JP5199097B2 (ja) リソグラフィシステム、センサ、測定方法
KR102505631B1 (ko) 복수의 하전 입자 빔에 의한 샘플 검사 방법
JP6376014B2 (ja) 荷電粒子ビーム描画装置、荷電粒子ビームのビーム分解能測定方法、及び荷電粒子ビーム描画装置の調整方法
JP2848417B2 (ja) 荷電粒子ビーム露光装置および露光方法
KR20240137486A (ko) 하전 입자 빔을 교정하기 위한 장치 및 방법
TW202301399A (zh) 失真最佳化的多射束掃描系統
JP2007019247A (ja) 電子ビーム装置およびデバイス製造方法
JP2009146884A (ja) 電子銃及び電子線装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141215

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180514

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20180629

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20180820

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20181113

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190313

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190313

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220304

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240304

Start annual number: 6

End annual number: 6